公开(公告)号：US20070040307A1

公开(公告)日：2007-02-22

申请号：US11433095

申请日：2006-05-13

申请人： Ki-Gang Lee ,  Yoo-Taek Kim ,  Seung-Gu Kang ,  Jung-Hwan Kim ,  Young-Ho Jeong

发明人： Ki-Gang Lee ,  Yoo-Taek Kim ,  Seung-Gu Kang ,  Jung-Hwan Kim ,  Young-Ho Jeong

IPC分类号： B28B3/00 ,  B28B1/00 ,  C04B33/32

CPC分类号： B09B3/0041 ,  C04B33/132 ,  C04B33/1321 ,  C04B33/1324 ,  C04B33/1352 ,  C04B33/138 ,  C04B35/6263 ,  C04B35/6269 ,  C04B2235/6021 ,  C04B2235/72 ,  C04B2235/727 ,  C04B2235/77 ,  Y02P40/69

摘要： This invention relates to a method for manufacturing an artificial ultra-lightweight aggregate having a specific gravity of 0.8-0.9 using raw sewage sludge. According to the invention, raw sewage sludge and water-free waste are mixed into a blend having a water content that allows the optimal extrusion, whereby excellent ultra-lightweight aggregate which has low water absorption rate and, low slump loss can be produced. In addition, the collective treatment of waste and the mass production of recycled products are possible without addition of a drying process for raw sewage sludge, and thus excellent ultra-lightweight aggregate can be supplied at low cost.

摘要翻译： 本发明涉及使用原污水污泥制造比重为0.8-0.9的人造超轻骨料的方法。 根据本发明，将原污水污泥和无水废弃物混合成具有允许最佳挤出的含水量的共混物，由此可以生产出具有低吸水率和低坍落度损失的优异的超轻骨料。 此外，废旧物料的集体处理和循环再造产品的大量生产是可能的，而不需要对原污水污泥进行干燥处理，因此可以以低成本提供优异的超轻骨料。

公开(公告)号：US06342461B1

公开(公告)日：2002-01-29

申请号：US09417547

申请日：1999-10-14

申请人： Ki-Gang Lee ,  Jung-Hwan Kim

发明人： Ki-Gang Lee ,  Jung-Hwan Kim

IPC分类号： C04B3304

CPC分类号： C04B35/62204 ,  C04B33/1327 ,  C04B33/135 ,  C04B33/1352 ,  C04B33/138 ,  Y02P40/69 ,  Y10S588/901

摘要： A ceramic composition made from waste materials and a method for manufacturing the same are disclosed. The ceramic composition comprises between 5 and 75 by weight part of a solid stated waste material including heavy metals, between 15 and 45 by weight part of a fly ash and between 5 and 55 by weight part of a clay. The ceramic composition is manufactured by compositely stabilizing various waste materials and is available for a building material or an engineering material. Therefore, the waste materials are effectively recycled without causing environmental pollution.

摘要翻译： 公开了一种由废料制成的陶瓷组合物及其制造方法。 陶瓷组合物包含5至75重量份的固体废物，包括重金属，15至45重量份的飞灰和5至55重量份的粘土。 陶瓷组合物通过复合稳定各种废料制成，并且可用于建筑材料或工程材料。 因此，废料可以有效循环利用，不会造成环境污染。

公开(公告)号：US07597839B2

公开(公告)日：2009-10-06

申请号：US11433095

申请日：2006-05-13

申请人： Ki-Gang Lee ,  Yoo-Taek Kim ,  Seung-Gu Kang ,  Jung-Hwan Kim ,  Young-Ho Jeong

发明人： Ki-Gang Lee ,  Yoo-Taek Kim ,  Seung-Gu Kang ,  Jung-Hwan Kim ,  Young-Ho Jeong

IPC分类号： B28B3/20

CPC分类号： B09B3/0041 ,  C04B33/132 ,  C04B33/1321 ,  C04B33/1324 ,  C04B33/1352 ,  C04B33/138 ,  C04B35/6263 ,  C04B35/6269 ,  C04B2235/6021 ,  C04B2235/72 ,  C04B2235/727 ,  C04B2235/77 ,  Y02P40/69

摘要： This invention relates to a method for manufacturing an artificial ultra-lightweight aggregate having a specific gravity of 0.8-0.9 using raw sewage sludge. According to the invention, raw sewage sludge and water-free waste are mixed into a blend having a water content that allows the optimal extrusion, whereby excellent ultra-lightweight aggregate which has low water absorption rate and, low slump loss can be produced. In addition, the collective treatment of waste and the mass production of recycled products are possible without addition of a drying process for raw sewage sludge, and thus excellent ultra-lightweight aggregate can be supplied at low cost.

摘要翻译： 本发明涉及使用原污水污泥制造比重为0.8-0.9的人造超轻骨料的方法。 根据本发明，将原污水污泥和无水废弃物混合成具有允许最佳挤出的含水量的共混物，由此可以生产出具有低吸水率和低坍落度损失的优异的超轻骨料。 此外，废旧物料的集体处理和循环再造产品的大量生产是可能的，而不需要对原污水污泥进行干燥处理，因此可以以低成本提供优异的超轻骨料。

公开(公告)号：US08890325B2

公开(公告)日：2014-11-18

申请号：US13244544

申请日：2011-09-25

申请人： Un-Byoung Kang ,  Kwang-chul Choi ,  Jung-Hwan Kim ,  Tae Hong Min

发明人： Un-Byoung Kang ,  Kwang-chul Choi ,  Jung-Hwan Kim ,  Tae Hong Min

IPC分类号： H01L23/48 ,  H01L33/48 ,  H01L33/62 ,  H01L33/00

CPC分类号： H01L33/486 ,  H01L33/0079 ,  H01L33/62 ,  H01L2224/16 ,  H01L2933/0066

摘要： In one embodiment, a heterojunction structure includes a first substrate; a second substrate comprising an electrode pad, the second substrate joined to the first substrate by an adhesive layer interposed between the first and second substrates, the first substrate and the adhesive layer having a via hole penetrating therethrough to expose a region of the electrode pad; a connection electrode disposed in the via hole and contacting the electrode pad; and an insulation layer electrically insulating the connection electrode from the first substrate. One of the first and second substrates has a thermal expansion coefficient different than a thermal expansion coefficient of the other of the first and second substrates, and at least one of the adhesive layer or the insulation layer comprises an organic material.

摘要翻译： 在一个实施例中，异质结结构包括第一衬底; 第二基板，其包括电极焊盘，所述第二基板通过插入在所述第一和第二基板之间的粘合剂层连接到所述第一基板，所述第一基板和所述粘合剂层具有贯穿其中的通孔，以暴露所述电极焊盘的区域; 连接电极，设置在所述通孔中并与所述电极焊盘接触; 以及将连接电极与第一基板电绝缘的绝缘层。 第一和第二基板中的一个具有不同于第一和第二基板中的另一个的热膨胀系数的热膨胀系数，并且粘合剂层或绝缘层中的至少一个包括有机材料。

公开(公告)号：US08450856B2

公开(公告)日：2013-05-28

申请号：US13240533

申请日：2011-09-22

申请人： Un-Byoung Kang ,  Kwang-chul Choi ,  Jung-Hwan Kim ,  Tae Hong Min ,  Hojin Lee ,  Minseung Yoon

发明人： Un-Byoung Kang ,  Kwang-chul Choi ,  Jung-Hwan Kim ,  Tae Hong Min ,  Hojin Lee ,  Minseung Yoon

IPC分类号： H01L23/48

CPC分类号： H01L21/4835 ,  H01L21/6836 ,  H01L21/76898 ,  H01L23/3114 ,  H01L23/3192 ,  H01L23/49827 ,  H01L24/06 ,  H01L24/45 ,  H01L24/48 ,  H01L25/0657 ,  H01L27/14618 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2224/02166 ,  H01L2224/02313 ,  H01L2224/02372 ,  H01L2224/02375 ,  H01L2224/02381 ,  H01L2224/024 ,  H01L2224/03462 ,  H01L2224/03466 ,  H01L2224/03602 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05008 ,  H01L2224/05022 ,  H01L2224/05026 ,  H01L2224/05147 ,  H01L2224/05548 ,  H01L2224/05567 ,  H01L2224/05571 ,  H01L2224/05647 ,  H01L2224/06131 ,  H01L2224/06135 ,  H01L2224/06138 ,  H01L2224/06181 ,  H01L2224/13007 ,  H01L2224/13022 ,  H01L2224/13024 ,  H01L2224/13025 ,  H01L2224/16147 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/29011 ,  H01L2224/32225 ,  H01L2224/45139 ,  H01L2224/48105 ,  H01L2224/48227 ,  H01L2224/48228 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06565 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/15183 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2224/05552 ,  H01L2224/45099 ,  H01L2224/05599 ,  H01L2924/00012

摘要： In a semiconductor device, an organic insulation pattern is disposed between first and second rerouting patterns. The organic insulation pattern may absorb the physical stress that occurs when the first and second rerouting patterns expand under heat. Since the organic insulation pattern is disposed between the first and second rerouting patterns, insulating properties can be increased relative to a semiconductor device in which a semiconductor pattern is disposed between rerouting patterns. Also, since a seed layer pattern is disposed between the first and second rerouting patterns and the organic insulation pattern and between the substrate and the organic insulation pattern, the adhesive strength of the first and second rerouting patterns is enhanced. This also reduces any issues with delamination. Also, the seed layer pattern prevents the metal that forms the rerouting pattern from being diffused to the organic insulation pattern. Therefore, a semiconductor device with enhanced reliability may be implemented.

公开(公告)号：US20120153498A1

公开(公告)日：2012-06-21

申请号：US13240533

申请日：2011-09-22

申请人： Un-Byoung Kang ,  Kwang-chul Choi ,  Jung-Hwan Kim ,  Tae Hong Min ,  Hojin Lee ,  Minseung Yoon

发明人： Un-Byoung Kang ,  Kwang-chul Choi ,  Jung-Hwan Kim ,  Tae Hong Min ,  Hojin Lee ,  Minseung Yoon

IPC分类号： H01L23/48

CPC分类号： H01L21/4835 ,  H01L21/6836 ,  H01L21/76898 ,  H01L23/3114 ,  H01L23/3192 ,  H01L23/49827 ,  H01L24/06 ,  H01L24/45 ,  H01L24/48 ,  H01L25/0657 ,  H01L27/14618 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2224/02166 ,  H01L2224/02313 ,  H01L2224/02372 ,  H01L2224/02375 ,  H01L2224/02381 ,  H01L2224/024 ,  H01L2224/03462 ,  H01L2224/03466 ,  H01L2224/03602 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05008 ,  H01L2224/05022 ,  H01L2224/05026 ,  H01L2224/05147 ,  H01L2224/05548 ,  H01L2224/05567 ,  H01L2224/05571 ,  H01L2224/05647 ,  H01L2224/06131 ,  H01L2224/06135 ,  H01L2224/06138 ,  H01L2224/06181 ,  H01L2224/13007 ,  H01L2224/13022 ,  H01L2224/13024 ,  H01L2224/13025 ,  H01L2224/16147 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/29011 ,  H01L2224/32225 ,  H01L2224/45139 ,  H01L2224/48105 ,  H01L2224/48227 ,  H01L2224/48228 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06565 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/15183 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2224/05552 ,  H01L2224/45099 ,  H01L2224/05599 ,  H01L2924/00012

摘要： In a semiconductor device, an organic insulation pattern is disposed between first and second rerouting patterns. The organic insulation pattern may absorb the physical stress that occurs when the first and second rerouting patterns expand under heat. Since the organic insulation pattern is disposed between the first and second rerouting patterns, insulating properties can be increased relative to a semiconductor device in which a semiconductor pattern is disposed between rerouting patterns. Also, since a seed layer pattern is disposed between the first and second rerouting patterns and the organic insulation pattern and between the substrate and the organic insulation pattern, the adhesive strength of the first and second rerouting patterns is enhanced. This also reduces any issues with delamination. Also, the seed layer pattern prevents the metal that forms the rerouting pattern from being diffused to the organic insulation pattern. Therefore, a semiconductor device with enhanced reliability may be implemented.

摘要翻译： 在半导体器件中，有机绝缘图案设置在第一和第二重新布线图案之间。 有机绝缘图案可以吸收当第一和第二重新布线图案在加热下膨胀时发生的物理应力。 由于有机绝缘图案设置在第一和第二重新布线图案之间，所以可以相对于其中在重新布线图案之间设置半导体图案的半导体器件来增加绝缘性能。 此外，由于在第一和第二重新布线图案和有机绝缘图案之间以及基板和有机绝缘图案之间设置种子层图案，所以第一和第二布线图案的粘合强度提高。 这也减少了分层问题。 此外，种子层图案防止形成重新布线图案的金属扩散到有机绝缘图案。 因此，可以实现具有增强的可靠性的半导体器件。

公开(公告)号：US20120018885A1

公开(公告)日：2012-01-26

申请号：US12960843

申请日：2010-12-06

申请人： Go Eun Lee ,  Taeje Cho ,  Un-Byoung Kang ,  Seongmin Ryu ,  Jung-Hwan Kim ,  Tae Hong Min

发明人： Go Eun Lee ,  Taeje Cho ,  Un-Byoung Kang ,  Seongmin Ryu ,  Jung-Hwan Kim ,  Tae Hong Min

IPC分类号： H01L23/498

CPC分类号： H01L23/481 ,  H01L23/49816 ,  H01L23/49855 ,  H01L24/48 ,  H01L24/73 ,  H01L25/0657 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/0557 ,  H01L2224/06181 ,  H01L2224/13025 ,  H01L2224/16145 ,  H01L2224/16146 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16235 ,  H01L2224/17181 ,  H01L2224/32145 ,  H01L2224/48145 ,  H01L2224/48227 ,  H01L2224/73207 ,  H01L2224/73253 ,  H01L2224/73257 ,  H01L2224/73265 ,  H01L2225/06541 ,  H01L2924/00014 ,  H01L2924/01322 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/1431 ,  H01L2924/1434 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor apparatus includes a base substrate and a logic chip disposed on the base substrate. The logic chip includes a memory control circuit, a first through silicon via, and a second through silicon via. The memory control circuit is disposed on a first surface of a substrate of the logic chip, and a memory chip is disposed on a second surface of the substrate of the logic chip. The first through silicon via electrically connects the memory control circuit and the memory chip, the second through silicon via is electrically connected to the memory chip and is configured to transmit power for the memory chip, the second through silicon via is electrically insulated from the logic chip, and the first surface of the substrate of the logic chip faces the base substrate.

摘要翻译： 半导体装置包括基底基板和布置在基底基板上的逻辑芯片。 逻辑芯片包括存储器控制电路，第一通孔硅通孔和第二硅通孔。 存储器控制电路设置在逻辑芯片的基板的第一表面上，并且存储芯片设置在逻辑芯片的基板的第二表面上。 第一通孔硅通过电连接存储器控制电路和存储器芯片，第二通孔硅通孔电连接到存储器芯片，并被配置为向存储器芯片发送功率，第二通孔硅通孔与逻辑电绝缘 芯片，并且逻辑芯片的基板的第一表面面向基底。

公开(公告)号：US20110262778A1

公开(公告)日：2011-10-27

申请号：US13122302

申请日：2009-10-13

申请人： Seogjin Yoon ,  Ki Eob Moon ,  Jung-Hwan Kim

发明人： Seogjin Yoon ,  Ki Eob Moon ,  Jung-Hwan Kim

IPC分类号： H01M10/42

CPC分类号： H01M2/0404 ,  H01M2/0473 ,  H01M2/1061 ,  H01M10/052 ,  H01M10/425 ,  H01M2200/103 ,  H01M2200/106

摘要： Disclosed herein is a secondary battery pack including a battery cell having an electrode assembly of a cathode/separator/anode structure mounted in a battery case together with an electrolyte in a sealed state, an insulative mounting member having openings, through which electrode terminals of the battery cell are exposed to the outside, the insulative mounting member being configured to have a structure in which a safety element is mounted to the top of the insulative mounting member, the insulative mounting member being disposed in direct contact with the top of the battery cell, and an insulative cap coupled to the top of the battery cell so that the insulative cap surrounds the insulative mounting member in a state in which the safety element is mounted to the insulative mounting member, wherein the battery case is provided at the top thereof with a coupling groove, and the insulative cap is provided at the bottom thereof with a coupling protrusion formed in a shape corresponding to the coupling groove, the coupling of the insulative cap to the battery cell being achieved by the insertion of the coupling protrusion into the coupling groove.

摘要翻译： 本文公开了一种二次电池组，其包括具有阴极/隔板/阳极结构的电极组件的电池组，阴极/隔板/阳极结构与密封状态的电解质一起安装在电池壳体中，具有开口的绝缘安装构件， 电池单元暴露于外部，绝缘安装构件被构造成具有将安全元件安装到绝缘安装构件的顶部的结构，绝缘安装构件设置成与电池单元的顶部直接接触 以及耦合到电池单元的顶部的绝缘帽，使得绝缘帽在安全元件安装到绝缘安装构件的状态下围绕绝缘安装构件，其中电池壳体在其顶部设置有 耦合槽，并且绝缘帽在其底部设置有形成为相应形状的联接突起 通过将耦合突起插入耦合槽来实现绝缘帽与电池单元的耦合。

公开(公告)号：US07928495B2

公开(公告)日：2011-04-19

申请号：US12906652

申请日：2010-10-18

申请人： Jung-Hwan Kim ,  Hun-Hyeoung Leam ,  Tae-Hyun Kim ,  Seok-Woo Nam ,  Hyun Namkoong ,  Yong-Seok Kim ,  Tea-Kwang Yu

发明人： Jung-Hwan Kim ,  Hun-Hyeoung Leam ,  Tae-Hyun Kim ,  Seok-Woo Nam ,  Hyun Namkoong ,  Yong-Seok Kim ,  Tea-Kwang Yu

IPC分类号： H01L29/76

CPC分类号： H01L29/785 ,  H01L21/28282 ,  H01L21/308 ,  H01L21/76224 ,  H01L21/76232 ,  H01L21/823481 ,  H01L27/115 ,  H01L27/11521 ,  H01L27/11568 ,  H01L29/0649 ,  H01L29/0653 ,  H01L29/0657 ,  H01L29/1079 ,  H01L29/42352 ,  H01L29/66818 ,  H01L29/66833 ,  H01L29/7851 ,  H01L29/7854 ,  H01L2029/7858

摘要： A semiconductor device includes an isolation layer defining an active region formed in a semiconductor substrate. A first recessing process is performed on the isolation layer to expose edge portions of the active region. A first rounding process is performed to round the edge portions of the active region. A second recessing process is performed on the isolation layer. A second rounding process is performed to round the edge portions of the active region.

摘要翻译： 半导体器件包括限定形成在半导体衬底中的有源区的隔离层。 在隔离层上执行第一凹陷处理以暴露活性区域的边缘部分。 执行第一舍入处理以围绕活动区域的边缘部分。 在隔离层上进行第二凹陷处理。 执行第二舍入处理以围绕活动区域的边缘部分。

公开(公告)号：US07161918B2

公开(公告)日：2007-01-09

申请号：US10029279

申请日：2001-12-28

申请人： Jung-Hwan Kim

发明人： Jung-Hwan Kim

IPC分类号： H04B7/216

CPC分类号： H04B7/2634

摘要： A mobile communication system and a mobile station service method in the mobile communication system is disclosed, and enables mobile terminals of a second generation (IS-95, IS-95B) and a third generation (IS-2000) to be operated using a CDMA Channel List and an Extended CDMA Channel List. The method preferably includes checking whether a frequency on service presently exists on a CDMA Channel List and an Extended CDMA Channel List when a service frequency of a base station is changed, copying the frequency allocated to the Extended CDMA Channel List to the CDMA Channel List if the frequency on service fails to exist on the CDMA Channel List, copying the frequency allocated to the CDMA Channel List to the Extended CDMA Channel List if the frequency on service fails to exist on the Extended CDMA Channel List, and transmitting the CDMA and Extended CDMA Channel Lists to which the frequency is copied to a terminal.

摘要翻译： 公开了移动通信系统中的移动通信系统和移动台服务方法，并且使用CDMA技术来操作第二代移动终端（IS-95，IS-95B）和第三代（IS-2000） 频道列表和扩展CDMA频道列表。 该方法优选地包括：当基站的服务频率改变时，检查在CDMA信道列表和扩频CDMA信道列表上当前是否存在服务频率，如果分配给扩频CDMA信道列表的频率复制到CDMA信道列表中 服务频率不能存在于CDMA频道列表上，如果服务频率不能存在于扩展CDMA频道列表上，则将分配给CDMA频道列表的频率复制到扩展CDMA频道列表，并且发送CDMA和扩展CDMA 通道列表将频率复制到终端。