公开(公告)号：US07183190B2

公开(公告)日：2007-02-27

申请号：US10258062

申请日：2001-03-27

申请人： Kinji Saijo ,  Shingji Ohsawa ,  Hiroaki Okamoto ,  Kazuo Yoshida ,  Tadatomo Suga

发明人： Kinji Saijo ,  Shingji Ohsawa ,  Hiroaki Okamoto ,  Kazuo Yoshida ,  Tadatomo Suga

IPC分类号： H01L21/44

CPC分类号： H01L24/12 ,  H01L23/3114 ,  H01L24/11 ,  H01L24/94 ,  H01L2224/0231 ,  H01L2224/0401 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05647 ,  H01L2224/13099 ,  H01L2224/16 ,  H01L2224/274 ,  H01L2924/01004 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/00 ,  H01L2924/00014

摘要： A method of efficiently and inexpensively fabricating a chip-size package having an electrode pitch expanded by forming a conductor wiring on the electrode forming surface side of a semiconductor chip, especially, a method for facilitating wiring and bump forming. A semiconductor device comprising a semi-conductor elements and conductor wirings formed on the semiconductor elements by etching wiring-forming metal foil; and a fabrication method for a semiconductor device comprising the steps of laminating wiring forming metal foil on the electrode forming surface side on the semiconductor, forming a resist wiring pattern on the metal foil, etching the metal foil, and slicing the device into individual elements.

摘要翻译： 尤其是在半导体芯片的电极形成面侧形成导体布线而具有电极间距扩大的芯片尺寸封装的方法，特别是有助于布线和凸块形成的方法。 一种半导体器件，包括通过蚀刻形成布线的金属箔在半导体元件上形成的半导体元件和导体布线; 以及一种半导体器件的制造方法，包括以下步骤：在半导体上的电极形成表面侧上层叠布线形成金属箔，在金属箔上形成抗蚀剂布线图案，蚀刻金属箔，将器件分割成单独的元件。

公开(公告)号：US09870922B2

公开(公告)日：2018-01-16

申请号：US15306303

申请日：2015-04-24

申请人： Tadatomo Suga ,  BONDTECH CO., LTD.

发明人： Tadatomo Suga ,  Akira Yamauchi

IPC分类号： H01L21/18 ,  B23K20/00 ,  H01L21/02 ,  H05H1/46 ,  H05H3/02 ,  H01J37/32

CPC分类号： H01L21/187 ,  B23K20/00 ,  H01J37/3233 ,  H01L21/02 ,  H01L21/67092 ,  H01L21/67115 ,  H01L21/76251 ,  H01L25/0657 ,  H05H1/46 ,  H05H3/02

摘要： A substrate bonding apparatus (100) includes a vacuum chamber (200), a surface activation part (610) for activating respective bonding surfaces of a first substrate (301) and a second substrate (302), and stage moving mechanisms (403, 404) for bringing the two bonding surfaces into contact with each other, to thereby bond the substrates (301, 302). In order to activate the bonding surfaces in the vacuum chamber (200), the bonding surfaces are irradiated with a particle beam for activating the bonding surfaces, and concurrently the bonding surfaces are also irradiated with silicon particles. It is thereby possible to increase the bonding strength of the substrates (301, 302).

公开(公告)号：US09601350B2

公开(公告)日：2017-03-21

申请号：US13982697

申请日：2012-01-30

申请人： Tadatomo Suga ,  Akira Yamauchi ,  Ryuichi Kondou ,  Yoshiie Matsumoto

发明人： Tadatomo Suga ,  Akira Yamauchi ,  Ryuichi Kondou ,  Yoshiie Matsumoto

IPC分类号： H01L21/322 ,  B23K1/20 ,  B23K20/24 ,  H01L21/67 ,  H01L21/762 ,  H01L21/302 ,  H01L21/02 ,  H01L21/263 ,  H01L29/04 ,  H01L29/36 ,  H01L21/20 ,  H01J37/317

CPC分类号： H01L21/3221 ,  B23K1/20 ,  B23K20/24 ,  B23K2101/36 ,  H01J37/317 ,  H01J2237/202 ,  H01J2237/3165 ,  H01L21/02046 ,  H01L21/2007 ,  H01L21/263 ,  H01L21/302 ,  H01L21/67092 ,  H01L21/67115 ,  H01L21/76251 ,  H01L29/04 ,  H01L29/36

摘要： [Problem] To provide a substrate bonding technique having a wide range of application. [Solution] A silicon thin film is formed on a bonding surface, and the interface with the substrate is surface-treated using energetic particles/metal particles.

公开(公告)号：US20140037945A1

公开(公告)日：2014-02-06

申请号：US13982686

申请日：2012-01-30

申请人： Tadatomo Suga ,  Akira Yamauchi ,  Ryuichi Kondou ,  Yoshiie Matsumoto

发明人： Tadatomo Suga ,  Akira Yamauchi ,  Ryuichi Kondou ,  Yoshiie Matsumoto

IPC分类号： B32B38/08 ,  B32B7/04

CPC分类号： B32B38/08 ,  B23K1/20 ,  B23K20/24 ,  B23K2101/36 ,  B32B7/04 ,  H01J37/317 ,  H01J2237/08 ,  H01J2237/202 ,  H01J2237/3165 ,  H01L21/02046 ,  H01L21/2007 ,  H01L21/302 ,  H01L21/67092 ,  H01L21/67115 ,  H01L21/76251 ,  H01L23/147 ,  H01L23/5252 ,  H01L2924/0002 ,  Y10T428/265 ,  Y10T428/31678 ,  H01L2924/00

摘要： [Problem] To provide a substrate bonding technique having a wide range of application. [Solution] A silicon thin film is formed on a bonding surface, and the interface with the substrate is surface-treated using energetic particles/metal particles.

摘要翻译： [问题]提供具有广泛应用的基板接合技术。 [解决方案]在接合表面上形成硅薄膜，并且使用高能粒子/金属颗粒对与基板的界面进行表面处理。

公开(公告)号：US07686912B2

公开(公告)日：2010-03-30

申请号：US10928851

申请日：2004-08-27

申请人： Tadatomo Suga ,  Taehyun Kim ,  Tomoyuki Abe

发明人： Tadatomo Suga ,  Taehyun Kim ,  Tomoyuki Abe

IPC分类号： B32B38/04

CPC分类号： H01J37/321 ,  B32B38/0008 ,  B32B2310/08 ,  B32B2310/14 ,  B32B2457/14 ,  H01L21/187

摘要： A substrate bonding method for mutually bonding substrates, has a first radiation step for irradiating the surfaces of the individual substrates with an oxygen particle beam, a second radiation step for irradiating the surfaces of the individual substrate with a nitrogen particle beam simultaneously with or subsequently to the first radiation step, and a step for stacking the individual substrates and bringing the surfaces thereof into close contact. Particularly, the substrates which have been irradiated first with an oxygen plasma and subsequently with a nitrogen plasma are stacked and bonded.

摘要翻译： 用于相互接合基板的基板接合方法具有用氧粒子束照射各个基板的表面的第一辐射步骤，用于将氮化物颗粒束的表面与氮颗粒束的表面同时或随后地照射的第二辐射步骤 第一辐射步骤和用于堆叠各个基板并使其表面紧密接触的步骤。 特别地，首先用氧等离子体并随后用氮等离子体照射的基板被层叠并结合。

公开(公告)号：US07319339B2

公开(公告)日：2008-01-15

申请号：US11759816

申请日：2007-06-07

申请人： Shinji Iino ,  Kiyoshi Takekoshi ,  Tadatomo Suga ,  Toshihiro Itoh ,  Kenichi Kataoka

发明人： Shinji Iino ,  Kiyoshi Takekoshi ,  Tadatomo Suga ,  Toshihiro Itoh ,  Kenichi Kataoka

IPC分类号： G01R31/02

CPC分类号： G01R31/2891 ,  G01R1/067 ,  G01R1/06794 ,  G01R3/00 ,  G01R31/2886

摘要： Disclosed is an inspection method for inspecting the electrical characteristics of a device by bringing an inspecting probe into electrical contact with an inspection electrode. An insulating film formed on the surface of the inspection electrode is broken by utilizing a fritting phenomenon so as to bring the inspection electrode into electrical contact with the inspection electrode.

摘要翻译： 公开了一种通过使检查探针与检查电极电接触来检查装置的电气特性的检查方法。 通过利用烧结现象使形成在检查电极表面上的绝缘膜破裂，从而使检查电极与检查电极电接触。

公开(公告)号：US20070128825A1

公开(公告)日：2007-06-07

申请号：US11293663

申请日：2005-12-02

申请人： Tadatomo Suga ,  Mohammad Howlader ,  Tomoyuki Abe

发明人： Tadatomo Suga ,  Mohammad Howlader ,  Tomoyuki Abe

IPC分类号： H01L21/30 ,  H01L21/46

CPC分类号： H01L21/187 ,  H01L24/27 ,  H01L24/30 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01033 ,  H01L2924/01079 ,  H01L2924/09701

摘要： A method for bonding of substrates has a steps of irradiating surfaces of the substrates respectively in a vacuum with both an inert gas beam and a metal beam thereby forming island shaped thin metal films on the surfaces of the substrates, and surface-activated bonding of the substrates through the island shaped thin metal films by contacting the surfaces of the substrates each other.

摘要翻译： 基板的接合方法具有分别在惰性气体束和金属梁两者的真空中照射基板的表面的步骤，从而在基板的表面上形成岛状薄金属膜，并且将表面激活的 通过使基板的表面彼此接触而穿过岛状薄金属膜的基板。

公开(公告)号：US20060145716A1

公开(公告)日：2006-07-06

申请号：US11296482

申请日：2005-12-08

申请人： Shigekazu Komatsu ,  Tadatomo Suga ,  Toshihiro Itoh ,  Kenichi Kataoka

发明人： Shigekazu Komatsu ,  Tadatomo Suga ,  Toshihiro Itoh ,  Kenichi Kataoka

IPC分类号： G01R31/02

CPC分类号： G01R1/07357 ,  G01R31/2887

摘要： At least one pair of electrode formed on a mounting surface of a stage is in contact with a conductive layer formed on a first surface of an inspection object, and an electrical path is formed between the both by using a fritting phenomenon.

摘要翻译： 形成在台的安装面上的至少一对电极与形成在检查对象物的第一面上的导电层接触，通过烧结现象在两者之间形成电路。

公开(公告)号：US20050170626A1

公开(公告)日：2005-08-04

申请号：US11077212

申请日：2005-03-11

申请人： Tadatomo Suga

发明人： Tadatomo Suga

IPC分类号： H01L21/768 ,  H01L21/304 ,  H01L21/3205 ,  H01L23/498 ,  H01L23/52 ,  H01L23/522 ,  H01L25/065 ,  H01L23/495

CPC分类号： H01L24/31 ,  H01L23/49827 ,  H01L23/49833 ,  H01L23/5226 ,  H01L25/0657 ,  H01L2224/05572 ,  H01L2224/80895 ,  H01L2224/9202 ,  H01L2225/06513 ,  H01L2924/0002 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01068 ,  H01L2924/09701 ,  H01L2924/12044 ,  H01L2924/15787 ,  H01L2924/19041 ,  H01L2224/05552 ,  H01L2924/00

摘要： There are provided a semiconductor device and method for fabricating the device capable of achieving reliable electrical connection by securely directly bonding conductors to each other even though bonding surfaces are polished by a CMP method and solid-state-bonded to each other. By polishing according to the CMP method, a through hole conductor 5 and a grounding wiring layer 10, which are made of copper, become concave in a dish-like shape and lowered in level, causing a dishing portion 17 since they have a hardness lower than that of a through hole insulator 11 made of silicon nitride. The through hole insulator 11 is selectively etched by a reactive ion etching method until the through hole insulator 11 comes to have a height equal to the height of a bottom portion 19 of the dishing portion 17 of the through hole conductor 5. The through hole conductors 5 and 25 are aligned with each other, and the bonding surfaces 12 and 22 are bonded to each other in a solid state bonding manner.

摘要翻译： 提供了一种用于制造该器件的半导体器件和方法，该器件能够通过将导体彼此牢固地直接接合而实现可靠的电连接，即使通过CMP方法对CMP表面进行了抛光并且彼此固态接合。 通过根据CMP方法进行研磨，由铜制成的通孔导体5和接地布线层10变成凹状，呈碗状，下降，导致凹陷部17由于硬度较低 比由氮化硅制成的通孔绝缘体11的厚度大。 通孔绝缘体11通过反应离子蚀刻法被选择性蚀刻，直到通孔绝缘体11具有与通孔导体5的凹陷部分17的底部19的高度相同的高度。通孔导体 5和25彼此对准，并且接合表面12和22以固态接合方式彼此接合。

公开(公告)号：US06887319B2

公开(公告)日：2005-05-03

申请号：US10413574

申请日：2003-04-15

申请人： Tadatomo Suga ,  Keisuke Saito ,  Rikiya Kato ,  Sakie Yamagata

发明人： Tadatomo Suga ,  Keisuke Saito ,  Rikiya Kato ,  Sakie Yamagata

IPC分类号： B23K35/02 ,  B23K35/26 ,  B23K35/36 ,  H05K3/34 ,  B23K35/365

CPC分类号： B23K35/262 ,  B23K35/025 ,  B23K35/3612 ,  B23K35/3618 ,  H05K3/3484

摘要： A residue-free solder paste which leaves little or no flux residue after reflow soldering and which have good printability, storage stability, retainability of parts, and wettability, comprises a solder powder mixed with a rosin-free pasty flux. The flux comprises at least one solid solvent and at least one highly viscous solvent in a total amount of 30-90 mass %, in addition to at least one liquid solvent, all the solvents vaporizing at a reflow soldering temperature. The flux may further contain 0.5-12% of a thixotropic agent such as a fatty acid amide and 1-15% of an activator selected from organic acids and their amine salts, the thixotropic agent and activator vaporizing in the presence of the solvents while the solvents are vaporizing.

摘要翻译： 在回流焊接后留下很少或没有助焊剂残留物并且具有良好的印刷性，储存稳定性，部件保持性和润湿性的无残留焊膏包括与无松香的糊状焊剂混合的焊料粉末。 除了至少一种液体溶剂之外，焊剂还包括至少一种固体溶剂和总量为30-90质量％的至少一种高粘度溶剂，所有溶剂在回流焊接温度下蒸发。 助熔剂可以进一步含有0.5-12％的触变剂如脂肪酸酰胺和1-15％的选自有机酸及其胺盐的活化剂，触变剂和活化剂在溶剂存在下蒸发，而 溶剂蒸发。