公开(公告)号：US5334803A

公开(公告)日：1994-08-02

申请号：US968055

申请日：1992-10-28

申请人： Ken Yamamura ,  Naoto Ueda ,  Kazunari Michii ,  Hitoshi Fujimoto ,  Kiyoaki Tsumura ,  Hitoshi Sasaki ,  Takashi Miyamoto

发明人： Ken Yamamura ,  Naoto Ueda ,  Kazunari Michii ,  Hitoshi Fujimoto ,  Kiyoaki Tsumura ,  Hitoshi Sasaki ,  Takashi Miyamoto

IPC分类号： H01L21/60 ,  H01L23/485 ,  H01L23/495 ,  H01L23/02 ,  H01L23/28 ,  H01R43/00

CPC分类号： H01L24/85 ,  H01L23/49503 ,  H01L23/4951 ,  H01L23/49537 ,  H01L23/49551 ,  H01L24/05 ,  H01L24/06 ,  H01L24/48 ,  H01L24/49 ,  H01L24/97 ,  H01L2224/04042 ,  H01L2224/05554 ,  H01L2224/05599 ,  H01L2224/06136 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48253 ,  H01L2224/4826 ,  H01L2224/48465 ,  H01L2224/48599 ,  H01L2224/4899 ,  H01L2224/49171 ,  H01L2224/78301 ,  H01L2224/85181 ,  H01L2224/85205 ,  H01L24/45 ,  H01L24/78 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01015 ,  H01L2924/0102 ,  H01L2924/01033 ,  H01L2924/01068 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/181 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/30105 ,  Y10T29/49146 ,  Y10T29/49158 ,  Y10T29/49169 ,  Y10T29/49171

摘要： A semiconductor device of the present invention accommodates a large semiconductor chip in a downsized package without impairing its reliability. The semiconductor chip is bonded on a relatively small die pad. Common inner leads and a plurality of inner leads are disposed opposite and spaced from the semiconductor chip by a gap ranging from 0.1 mm to 0.4 mm and the gap between the semiconductor chip and the common inner leads and the plurality of inner leads is filled with a resin which forms part of a resin package.

摘要翻译： 本发明的半导体器件在小尺寸封装中容纳大型半导体芯片，而不损害其可靠性。 半导体芯片被接合在相对较小的管芯焊盘上。 通常的内引线和多个内引线与半导体芯片相对设置并间隔0.1mm至0.4mm的间隙，并且半导体芯片与公共内引线之间的间隙和多个内引线填充有 形成树脂封装的一部分的树脂。

公开(公告)号：US5003373A

公开(公告)日：1991-03-26

申请号：US262804

申请日：1988-10-26

申请人： Kiyoaki Tsumura ,  Hitoshi Fujimoto

发明人： Kiyoaki Tsumura ,  Hitoshi Fujimoto

IPC分类号： H01L21/603 ,  B23K20/00 ,  H01L21/60 ,  H01L21/607

CPC分类号： H01L24/85 ,  B23K20/007 ,  H01L24/05 ,  H01L24/48 ,  H01L2224/04042 ,  H01L2224/05556 ,  H01L2224/05624 ,  H01L2224/45015 ,  H01L2224/45147 ,  H01L2224/4807 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48453 ,  H01L2224/48463 ,  H01L2224/48465 ,  H01L2224/48799 ,  H01L2224/78301 ,  H01L2224/85045 ,  H01L2224/85181 ,  H01L2224/85203 ,  H01L2224/85205 ,  H01L24/45 ,  H01L24/78 ,  H01L2924/00011 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01082 ,  H01L2924/10253 ,  H01L2924/181 ,  H01L2924/20108 ,  H01L2924/20109 ,  H01L2924/20303 ,  H01L2924/20752 ,  H01L2924/20753

摘要： A structure of an electrode junction for a semiconductor device comprises an insulating film covering the entire surface of a silicon substrate, an aluminum electrode layer which is formed on the insulating film, a copper ball bonded on the electrode layer, and a copper-aluminum alloy layer continuously formed from the copper ball to the aluminum electrode layer. The aluminum layer under the copper ball is not separated from the aluminum layer surrounding the copper ball, so that alloy layer deterioration along the periphery thereof does not cause the electrical resistance to increase. This structure will increase the device life time to the maximum level.

摘要翻译： 用于半导体器件的电极结的结构包括覆盖硅衬底的整个表面的绝缘膜，形成在绝缘膜上的铝电极层，接合在电极层上的铜球和铜 - 铝合金 层由铜球连续形成至铝电极层。 铜球下方的铝层不与铜球周围的铝层分离，因此沿其周围的合金层劣化不会导致电阻增加。 这种结构将使设备的使用寿命提高到最大水平。

公开(公告)号：US4984056A

公开(公告)日：1991-01-08

申请号：US450455

申请日：1989-12-14

申请人： Hitoshi Fujimoto ,  Kiyoaki Tsumura

发明人： Hitoshi Fujimoto ,  Kiyoaki Tsumura

IPC分类号： H01L21/60 ,  H01L23/29 ,  H01L23/532

CPC分类号： H01L24/05 ,  H01L23/293 ,  H01L23/5329 ,  H01L24/48 ,  H01L2224/02166 ,  H01L2224/04042 ,  H01L2224/05009 ,  H01L2224/05073 ,  H01L2224/05083 ,  H01L2224/05556 ,  H01L2224/05624 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48463 ,  H01L2224/48624 ,  H01L2224/48724 ,  H01L2224/85205 ,  H01L24/45 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/04941 ,  H01L2924/14 ,  Y10S257/915 ,  Y10S257/924

摘要： A semiconductor integrated circuit device includes a tetraethylorthosilicate film between a TiN film and a field oxide film disposed. This structure greatly reduced the possibility of separation of films in the bonding structure and contact failure as part of a wire bonding structure.

摘要翻译： 半导体集成电路器件包括在TiN膜和设置的场氧化物膜之间的原硅酸四乙酯膜。 这种结构大大降低了接合结构中的膜分离和作为引线接合结构的一部分的接触故障的可能性。

公开(公告)号：USRE35496E

公开(公告)日：1997-04-29

申请号：US525174

申请日：1995-09-08

申请人： Ken Yamamura ,  Naoto Ueda ,  Kazunari Michii ,  Hitoshi Fujimoto ,  Kiyoaki Tsumura ,  Hitoshi Sasaki ,  Takashi Miyamoto

发明人： Ken Yamamura ,  Naoto Ueda ,  Kazunari Michii ,  Hitoshi Fujimoto ,  Kiyoaki Tsumura ,  Hitoshi Sasaki ,  Takashi Miyamoto

IPC分类号： H01L21/60 ,  H01L23/485 ,  H01L23/495 ,  H01L23/02 ,  H01L23/08 ,  H01L43/00

CPC分类号： H01L24/85 ,  H01L23/49503 ,  H01L23/4951 ,  H01L23/49537 ,  H01L23/49551 ,  H01L24/05 ,  H01L24/06 ,  H01L24/48 ,  H01L24/49 ,  H01L24/97 ,  H01L2224/04042 ,  H01L2224/05554 ,  H01L2224/05599 ,  H01L2224/06136 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48253 ,  H01L2224/4826 ,  H01L2224/48465 ,  H01L2224/48599 ,  H01L2224/4899 ,  H01L2224/49171 ,  H01L2224/78301 ,  H01L2224/85181 ,  H01L2224/85205 ,  H01L24/45 ,  H01L24/78 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01015 ,  H01L2924/0102 ,  H01L2924/01033 ,  H01L2924/01068 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/181 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/30105 ,  Y10T29/49146 ,  Y10T29/49158 ,  Y10T29/49169 ,  Y10T29/49171

摘要： A semiconductor device of the present invention accommodates a large semiconductor chip in a downsized package without impairing its reliability. The semiconductor chip is bonded on a relatively small die pad. Common inner leads and a plurality of inner leads are disposed opposite and spaced from the semiconductor chip by a gap ranging from 0.1 mm to 0.4 mm and the gap between the semiconductor chip and the common inner leads and the plurality of inner leads is filled with a resin which forms pan of a resin package.

摘要翻译： 本发明的半导体器件在小尺寸封装中容纳大型半导体芯片，而不损害其可靠性。 半导体芯片被接合在相对较小的管芯焊盘上。 通常的内部引线和多个内部引线与半导体芯片相对设置并间隔0.1mm至0.4mm的间隙，并且半导体芯片与公共内部引线之间的间隙以及多个内部引线填充有 形成树脂包装盘的树脂。

公开(公告)号：US06907053B2

公开(公告)日：2005-06-14

申请号：US10183509

申请日：2002-06-28

申请人： Kenji Ohgiyama ,  Kiyoaki Tsumura ,  Koji Yamashita ,  Toshio Takeuchi ,  Susumu Ishida ,  Kenji Kan

发明人： Kenji Ohgiyama ,  Kiyoaki Tsumura ,  Koji Yamashita ,  Toshio Takeuchi ,  Susumu Ishida ,  Kenji Kan

IPC分类号： G11B7/08 ,  G11B7/125 ,  H01S5/00 ,  H01S5/022 ,  H01S5/024 ,  H01S3/04

CPC分类号： H01S5/02244 ,  G11B7/082 ,  G11B7/127 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01S5/005 ,  H01S5/02216 ,  H01S5/02292 ,  H01S5/02469 ,  H01L2924/00014

摘要： A semiconductor laser element and a protective wall surrounding the element are provided on the surface of a metal frame of a semiconductor laser device. Circumferential portions are provided on an outer periphery of the metal frame for rotating the optical axis of light originating from a light-emitting point of the semiconductor laser element to a direction along the surface of the metal frame. By way of a guide of an optical pickup base corresponding to the circumferential portions, the semiconductor laser device is mounted on the optical pickup base.

摘要翻译： 半导体激光元件和围绕元件的保护壁设置在半导体激光器件的金属框架的表面上。 在金属框架的外周设置有圆周部分，用于将源自半导体激光元件的发光点的光的光轴旋转到沿着金属框架的表面的方向。 通过对应于圆周部分的光学拾取器基座的引导，半导体激光器件安装在光学拾取器基座上。

公开(公告)号：US5293066A

公开(公告)日：1994-03-08

申请号：US846906

申请日：1992-03-06

申请人： Kiyoaki Tsumura

发明人： Kiyoaki Tsumura

IPC分类号： H01L21/60 ,  H01L23/495 ,  H01L23/498 ,  H01L23/50 ,  H01L23/48 ,  H01L29/44 ,  H01L29/60 ,  H01L29/82

CPC分类号： H01L24/32 ,  H01L23/49531 ,  H01L23/49811 ,  H01L23/49861 ,  H01L24/49 ,  H01L2224/05554 ,  H01L2224/32245 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/4911 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L24/45 ,  H01L24/48 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01068 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/15153 ,  H01L2924/15165 ,  H01L2924/181 ,  H01L2924/19107 ,  H01L2924/30107

摘要： Leads near a die pad of a lead frame for a semiconductor device include terminal leads in a pattern on an insulating resin layer. The inner ends of the terminal leads are connected with gold wires to electrode pads of a semiconductor chip, and the outer ends of the terminal leads are also connected with gold wires to inner lead portions of the leads. Wide ground pads are provided which extend from the inner lead portions to the die pad. Ground electrodes on the semiconductor chip are connected with wires to the ground pads to which the insulating resin layer is bonded.

摘要翻译： 用于半导体器件的引线框的芯片焊盘附近的引线包括绝缘树脂层上的图案的端子引线。 端子引线的内端与金线连接到半导体芯片的电极焊盘，并且端子引线的外端也与金线连接到引线的内引线部分。 提供从内引线部分延伸到管芯焊盘的宽接地焊盘。 半导体芯片上的接地电极与导线连接到绝缘树脂层所接合的接地焊盘。

公开(公告)号：US5124277A

公开(公告)日：1992-06-23

申请号：US639237

申请日：1991-01-09

申请人： Kiyoaki Tsumura

发明人： Kiyoaki Tsumura

IPC分类号： H01L21/60 ,  B23K20/00 ,  H01L21/607

CPC分类号： H01L24/85 ,  B23K20/007 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/48 ,  H01L2224/02166 ,  H01L2224/04042 ,  H01L2224/05554 ,  H01L2224/05624 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/4516 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/48624 ,  H01L2224/48799 ,  H01L2224/49175 ,  H01L2224/78301 ,  H01L2224/85045 ,  H01L2224/85181 ,  H01L2224/85205 ,  H01L24/45 ,  H01L24/78 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/1433 ,  H01L2924/181 ,  H01L2924/20107 ,  Y10S228/904

摘要： In an internal wire bonding section of a semiconductor device, electrodes pads (e.g., Al pads) which are not connected to leads are ball-bonded with metallic balls (e.g., Au balls) to improve moisture resistance and to thereby reduce the rate of corrosion of internal portions of the semiconductor device. The operation of the semiconductor device manufacturing apparatus for ball bonding conforms to the conventional wire bonding operation, so that the existing process can be used without significantly improving the apparatus or significantly changing the semiconductor manufacturing method.

摘要翻译： 在半导体器件的内部引线接合部分中，未连接到引线的电极焊盘（例如，Al焊盘）与金属球（例如，Au球）滚珠接合以改善耐湿性并从而降低腐蚀速率 的半导体器件的内部部分。 用于球形接合的半导体器件制造装置的操作符合常规的引线键合操作，使得可以使用现有的工艺而不显着地改进装置或显着改变半导体制造方法。

公开(公告)号：US4886200A

公开(公告)日：1989-12-12

申请号：US230376

申请日：1988-08-10

申请人： Kiyoaki Tsumura

发明人： Kiyoaki Tsumura

IPC分类号： B23K20/00 ,  H01L21/60 ,  H01L21/607

CPC分类号： H01L24/85 ,  B23K20/007 ,  H01L24/05 ,  H01L24/48 ,  H01L24/78 ,  H01L2224/04042 ,  H01L2224/05556 ,  H01L2224/05624 ,  H01L2224/45015 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48453 ,  H01L2224/48463 ,  H01L2224/48465 ,  H01L2224/48799 ,  H01L2224/78303 ,  H01L2224/85048 ,  H01L2224/85181 ,  H01L2224/85205 ,  H01L24/45 ,  H01L2924/00011 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/10253 ,  H01L2924/15747 ,  H01L2924/20303

摘要： A wire bonding capillary tip is disclosed. A metal ball at the end of a bonding wire is positioned adjacent a material to be bonded, and pressed against the material to plastically deform the ball. The orientation of the load applied to the ball changes continuously and smoothly. Ultrasonic vibrations are applied to the metal ball to diffuse elements of the metal ball and the material mutually. The capillary tip includes a flat loading surface to press the metal ball, a through-hole opened to the loading surface for passing the wire therethrough, and a convex surface around the opening of the through-hole which connects the through-hole to the flat loading surface continuously and smoothly.

摘要翻译： 公开了引线接合毛细管尖端。 接合线末端的金属球位于待接合的材料附近，并压靠在材料上以使球塑性变形。 施加到球上的负载取向连续平稳地变化。 超声振动被施加到金属球上以相互扩散金属球和材料的元件。 毛细管尖端包括用于按压金属球的平坦加载表面，通向开口的通孔，用于使线穿过其中的通孔以及将通孔连接到平面的通孔的开口周围的凸表面 装载面连续平稳。

公开(公告)号：US4821944A

公开(公告)日：1989-04-18

申请号：US229997

申请日：1988-08-09

申请人： Kiyoaki Tsumura

发明人： Kiyoaki Tsumura

IPC分类号： H01L21/603 ,  B23K13/01 ,  B23K20/00 ,  H01L21/60 ,  B23K20/10

CPC分类号： H01L24/85 ,  B23K13/01 ,  B23K20/007 ,  H01L24/78 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48464 ,  H01L2224/48465 ,  H01L2224/48624 ,  H01L2224/48639 ,  H01L2224/48644 ,  H01L2224/48647 ,  H01L2224/48724 ,  H01L2224/48739 ,  H01L2224/48744 ,  H01L2224/48747 ,  H01L2224/48824 ,  H01L2224/48839 ,  H01L2224/48844 ,  H01L2224/48847 ,  H01L2224/78302 ,  H01L2224/85181 ,  H01L2224/85203 ,  H01L2224/85205 ,  H01L2224/85212 ,  H01L24/45 ,  H01L24/48 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/15747 ,  H01L2924/1576 ,  H01L2924/20752

摘要： The method for bonding a wire of this invention comprises the steps of: positioning a metal ball or a wire on a material (to be bonded); applying a pressing force on the metal ball or the wire against the material (to be bonded) and deforming it; inducing eddy currents in the wire to generate heat energy, whereby elements of the wire and the material (to be bonded) are mutually diffused by means of the heat energy and the pressing force, and bonding is completed. The wire bonding apparatus of this invention comprises: a capillary tip having a through-hole which opens onto a end thereof and through which a wire is passed, the capillary tip pressing the wire against a material to be bonded by the end of the tip (flat face); an electromagnetic coil provided around the end of the capillary tip to surround the through-hole; and a power source for supplying a high-frequency current to the electromagnetic coil.

摘要翻译： 本发明的接线方法包括以下步骤：将金属球或线材定位在待接合的材料上; 对金属球或线材施加压力抵抗材料（待结合）并使其变形; 在线中引起涡流以产生热能，由此通过热能和压力使线材和材料（待接合）的元件相互扩散，并且结合完成。 本发明的引线接合装置包括：毛细管尖端，其具有通向其一端的通孔，毛细管通过所述通孔，所述毛细管尖端将所述电线压靠在所述末端的待粘合材料上（ 平面）; 围绕所述毛细管尖端的端部设置以围绕所述通孔的电磁线圈; 以及用于向电磁线圈提供高频电流的电源。

公开(公告)号：US5116783A

公开(公告)日：1992-05-26

申请号：US392553

申请日：1989-08-11

申请人： Kiyoaki Tsumura

发明人： Kiyoaki Tsumura

IPC分类号： H01L21/60 ,  H01L21/603

CPC分类号： H01L24/85 ,  H01L24/03 ,  H01L24/05 ,  H01L24/29 ,  H01L24/48 ,  H01L2224/04042 ,  H01L2224/05556 ,  H01L2224/05624 ,  H01L2224/29101 ,  H01L2224/2919 ,  H01L2224/29191 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/4807 ,  H01L2224/48453 ,  H01L2224/48463 ,  H01L2224/48465 ,  H01L2224/48624 ,  H01L2224/48824 ,  H01L2224/73265 ,  H01L2224/83805 ,  H01L2224/85205 ,  H01L2224/85375 ,  H01L24/45 ,  H01L2924/00011 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/0102 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01076 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/10253 ,  H01L2924/19043 ,  H01L2924/20107 ,  H01L2924/20108 ,  H01L2924/20109 ,  H01L2924/20303 ,  Y10S228/904 ,  Y10T29/49121

摘要： A method of producing a semiconductor device includes bonding a semiconductor chip to a die pad of a lead frame by means of a silicone resin, to bonding a copper wire and an aluminum electrode of the semiconductor chip in such a manner that intermetallic compound mainly consisting of CuAl.sub.2 is formed in the bonding region. This method suppresses the deterioration of the copper-aluminum alloy layer and these semiconductor devices have a high reliability at a high temperature, as well as uniform quality in the production.

摘要翻译： 一种制造半导体器件的方法包括：通过硅树脂将半导体芯片接合到引线框架的管芯焊盘，以半导体芯片的铜线和铝电极以主要由以下组成的金属间化合物 在接合区域中形成CuAl2。 该方法抑制了铜 - 铝合金层的劣化，并且这些半导体器件在高温下具有高可靠性，并且在生产中具有均匀的质量。