Abstract:
A semiconductor device with a cavity structure comprises: a carrier substrate; a first die having an active surface and the pads thereon; a back surface of the first die is disposed on the carrier substrate; a second die having a top surface and a back surface and a cavity structure therein; the top surface of a second die is flipped to dispose on the first die, and the cavity structure is an inverse U-type to dispose between the active surface of the first die and the top surface of the second die; the wires is electrically connected the pads with the first connecting points; a package body encapsulated the first die, the second die, the wires, and the portion of the top surface of the carrier substrate; and the connecting components is disposed on the back surface of the carrier substrate and is electrically connected the second connecting points.
Abstract:
A semiconductor device with a cavity structure comprises: a carrier substrate; a first die having an active surface and the pads thereon; a back surface of the first die is disposed on the carrier substrate; a second die having a top surface and a back surface and a cavity structure therein; the top surface of a second die is flipped to dispose on the first die, and the cavity structure is an inverse U-type to dispose between the active surface of the first die and the top surface of the second die; the wires is electrically connected the pads with the first connecting points; a package body encapsulated the first die, the second die, the wires, and the portion of the top surface of the carrier substrate; and the connecting components is disposed on the back surface of the carrier substrate and is electrically connected the second connecting points.
Abstract:
A method for packaging semiconductor device is provided, which comprises: providing a carrier substrate having a top surface and a back surface, a circuit arrangement on the top surface of the carrier substrate, and a through hole is disposed near the center of the carrier substrate and is formed passed through the carrier substrate; providing a chip having an active surface and a back surface, a plurality of pads is disposed on the periphery of the active surface and a plurality of connecting elements is disposed thereon; the active surface of chip is flipped and bonded on the circuit arrangement on the top surface of the carrier substrate, and the plurality of connecting elements is not covering the through hole; filling the underfilling material to encapsulate between the plurality of connecting elements and the top surface of the carrier substrate and to fill with the through hole; and performing a suction process to remove the air within the underfilling material between the plurality of connecting elements on the chip and the top surface of the carrier substrate, such that the underfilling material can completely encapsulate between the plurality of connecting elements on the chip and the top surface of the carrier surface.
Abstract:
A light-emitting diode (LED) lamp and a polygonal heat-dissipation structure thereof are provided. The LED lamp includes a polygonal heat-dissipation unit and a lighting module. The polygonal heat-dissipation unit has a polygonal hollow column and fins. The fins and the lighting module are thermally disposed on an inner surface and an outer surface of the polygonal hollow column, respectively. Thus, heat generated by the lighting module is dissipated by the fins rapidly. As the fins are thermally disposed on the inner surface of the polygon hollow column instead of being exposed, the volume of the LED lamp can be minimized, and the look of the LED lamp also can be prettified.
Abstract:
In accordance with an embodiment, a method comprises providing a substrate having a conductive material thereon, forming a ground plane, a first trace rail, and a first perpendicular trace from the conductive material, and forming an insulator material over the ground plane, the first trace rail, and the first perpendicular trace. The ground plane is between the first trace rail and an area of the substrate over which will be a die. The first trace rail extends along a first outer edge of the ground plane, and the first perpendicular trace is coupled to the first trace rail and extends perpendicularly from the first trace rail.
Abstract:
The invention provides a semiconductor device and associated method, which includes a substrate, a first die, multiple sub-package systems surrounding the first die, and a heat spreader. The first die and the sub-package systems are installed on a same surface of the substrate, wherein projections of the first die and each sub-package system on the surface partially overlap, and have a portion not overlapping. Each of the sub-package systems includes an interposer and multiple second dice installed on the interposer by way of flip-chip. The heat spreader includes a protrusion portion and a dissipation plate; the dissipation plate covers the first die and the sub-package systems, and the protrusion portion is set between the dissipation plate and the first die.
Abstract:
An operating method for a memory device and a memory array and an operating method for the same are provided. The operating method for the memory device comprises following steps. A memory device is made being in a set state. A method for making the memory device being in the set state comprises applying a first bias voltage to the memory device. The memory device in the set state is read. A method for reading the memory device in the set state comprises applying a second bias voltage to the memory device. A recovering bias voltage is applied to the memory device. The step for applying the recovering bias voltage is performed after the step for applying the first bias voltage or the step for applying the second bias voltage.
Abstract:
The invention provides a semiconductor device and associated method, which includes a substrate, a first die, multiple sub-package systems surrounding the first die, and a heat spreader. The first die and the sub-package systems are installed on a same surface of the substrate, wherein projections of the first die and each sub-package system on the surface partially overlap, and have a portion not overlapping. Each of the sub-package systems includes an interposer and multiple second dice installed on the interposer by way of flip-chip. The heat spreader includes a protrusion portion and a dissipation plate; the dissipation plate covers the first die and the sub-package systems, and the protrusion portion is set between the dissipation plate and the first die.
Abstract:
Disclosed are methods of identifying microRNA motifs or microRNA precursors for a target gene or a set of target genes. Also disclosed are related computer-readable media.
Abstract:
A programmable metallization device comprises a first electrode and a second electrode, and a first dielectric layer, a second dielectric layer, and an ion-supplying layer in series between the first and second electrodes. In operation, a conductive bridge is formed or destructed in the first dielectric layer to represent a data value. During read, a read bias is applied that is sufficient to cause formation of a transient bridge in the second dielectric layer, and make a conductive path through the cell if the bridge is present in the first dielectric layer. If the bridge is not present in the first dielectric layer during the read, then the conductive path is not formed. Upon removal of the read bias voltage any the conductive bridge formed in the second dielectric layer is destructed while the conductive bridge in the corresponding other first dielectric layer, if any, remains.