Package structure with underfilling material and packaging method thereof
    3.
    发明申请
    Package structure with underfilling material and packaging method thereof 审中-公开
    包装材料及其包装方法

    公开(公告)号:US20120032328A1

    公开(公告)日:2012-02-09

    申请号:US12923462

    申请日:2010-09-23

    Abstract: A method for packaging semiconductor device is provided, which comprises: providing a carrier substrate having a top surface and a back surface, a circuit arrangement on the top surface of the carrier substrate, and a through hole is disposed near the center of the carrier substrate and is formed passed through the carrier substrate; providing a chip having an active surface and a back surface, a plurality of pads is disposed on the periphery of the active surface and a plurality of connecting elements is disposed thereon; the active surface of chip is flipped and bonded on the circuit arrangement on the top surface of the carrier substrate, and the plurality of connecting elements is not covering the through hole; filling the underfilling material to encapsulate between the plurality of connecting elements and the top surface of the carrier substrate and to fill with the through hole; and performing a suction process to remove the air within the underfilling material between the plurality of connecting elements on the chip and the top surface of the carrier substrate, such that the underfilling material can completely encapsulate between the plurality of connecting elements on the chip and the top surface of the carrier surface.

    Abstract translation: 提供一种封装半导体器件的方法,其包括:提供具有顶表面和背表面的载体衬底,在载体衬底的顶表面上设置电路装置,并且在载体衬底的中心附近设置通孔 并形成通过载体基板; 提供具有活性表面和背面的芯片,多个焊盘设置在有源表面的周边上,并且多个连接元件设置在其上; 芯片的有源表面被翻转并接合在载体基板的顶表面上的电路装置上,并且多个连接元件不覆盖通孔; 填充底填充材料以封装在多个连接元件和载体基板的顶表面之间并填充通孔; 并且进行抽吸处理以去除芯片上的多个连接元件和载体基板的顶表面之间的底部填充材料内的空气,使得底部填充材料可以完全封装在芯片上的多个连接元件和 载体表面的顶表面。

    Light-Emitting Diode (LED) Lamp and Polygonal Heat-Dissipation Structure Thereof
    4.
    发明申请
    Light-Emitting Diode (LED) Lamp and Polygonal Heat-Dissipation Structure Thereof 审中-公开
    发光二极管(LED)灯及其多重散热结构

    公开(公告)号:US20100327725A1

    公开(公告)日:2010-12-30

    申请号:US12492379

    申请日:2009-06-26

    Abstract: A light-emitting diode (LED) lamp and a polygonal heat-dissipation structure thereof are provided. The LED lamp includes a polygonal heat-dissipation unit and a lighting module. The polygonal heat-dissipation unit has a polygonal hollow column and fins. The fins and the lighting module are thermally disposed on an inner surface and an outer surface of the polygonal hollow column, respectively. Thus, heat generated by the lighting module is dissipated by the fins rapidly. As the fins are thermally disposed on the inner surface of the polygon hollow column instead of being exposed, the volume of the LED lamp can be minimized, and the look of the LED lamp also can be prettified.

    Abstract translation: 提供了一种发光二极管(LED)灯及其多边形散热结构。 LED灯包括多边形散热单元和照明模块。 多边形散热单元具有多边形空心柱和翅片。 翅片和照明模块分别热分布在多边形中空柱的内表面和外表面上。 因此,照明模块产生的热量被散热片快速消散。 由于翅片被热设置在多边形中空柱的内表面上而不是暴露,所以可以使LED灯的体积最小化,并且LED灯的外观也可以被优化。

    OPERATING METHOD FOR MEMORY DEVICE AND MEMORY ARRAY AND OPERATING METHOD FOR THE SAME
    7.
    发明申请
    OPERATING METHOD FOR MEMORY DEVICE AND MEMORY ARRAY AND OPERATING METHOD FOR THE SAME 有权
    用于存储器件和存储器阵列的操作方法及其操作方法

    公开(公告)号:US20140036570A1

    公开(公告)日:2014-02-06

    申请号:US13567750

    申请日:2012-08-06

    Abstract: An operating method for a memory device and a memory array and an operating method for the same are provided. The operating method for the memory device comprises following steps. A memory device is made being in a set state. A method for making the memory device being in the set state comprises applying a first bias voltage to the memory device. The memory device in the set state is read. A method for reading the memory device in the set state comprises applying a second bias voltage to the memory device. A recovering bias voltage is applied to the memory device. The step for applying the recovering bias voltage is performed after the step for applying the first bias voltage or the step for applying the second bias voltage.

    Abstract translation: 提供了一种用于存储器件和存储器阵列的操作方法及其操作方法。 存储器件的操作方法包括以下步骤。 使存储器件处于置位状态。 用于使存储器件处于设置状态的方法包括将第一偏置电压施加到存储器件。 读取设置状态的存储器件。 一种在设定状态下读取存储器件的方法,包括将第二偏置电压施加到存储器件。 将恢复的偏置电压施加到存储器件。 在施加第一偏置电压的步骤或施加第二偏置电压的步骤之后执行用于施加恢复偏压的步骤。

    Programmable metallization cell with two dielectric layers
    10.
    发明授权
    Programmable metallization cell with two dielectric layers 有权
    具有两个电介质层的可编程金属化电池

    公开(公告)号:US09117515B2

    公开(公告)日:2015-08-25

    申请号:US13352946

    申请日:2012-01-18

    Abstract: A programmable metallization device comprises a first electrode and a second electrode, and a first dielectric layer, a second dielectric layer, and an ion-supplying layer in series between the first and second electrodes. In operation, a conductive bridge is formed or destructed in the first dielectric layer to represent a data value. During read, a read bias is applied that is sufficient to cause formation of a transient bridge in the second dielectric layer, and make a conductive path through the cell if the bridge is present in the first dielectric layer. If the bridge is not present in the first dielectric layer during the read, then the conductive path is not formed. Upon removal of the read bias voltage any the conductive bridge formed in the second dielectric layer is destructed while the conductive bridge in the corresponding other first dielectric layer, if any, remains.

    Abstract translation: 可编程金属化器件包括第一电极和第二电极,以及在第一和第二电极之间串联的第一电介质层,第二电介质层和离子供给层。 在操作中,在第一电介质层中形成或破坏导电桥以表示数据值。 在读取期间,施加足以在第二电介质层中形成瞬态电桥的读取偏压,并且如果桥存在于第一介电层中,则形成通过电池的导电路径。 如果在读取期间桥不在第一电介质层中,则不形成导电路径。 在去除读取的偏置电压时,形成在第二介电层中的任何导电桥被破坏,而相应的其它第一介电层(如果有的话)中的导电桥保留。

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