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公开(公告)号：US07394332B2
公开(公告)日：2008-07-01
申请号：US11217163
申请日：2005-09-01
申请人： Louis C. Hsu , Lowrence A. Clevenger , Timothy J. Dalton , Carl J. Radens , Keith Kwong Hon Wong , Chih-Chao Yang
发明人： Louis C. Hsu , Lowrence A. Clevenger , Timothy J. Dalton , Carl J. Radens , Keith Kwong Hon Wong , Chih-Chao Yang
IPC分类号： H01P1/10
CPC分类号： H01H50/005 , H01H2050/007 , Y10T29/4902 , Y10T29/49105 , Y10T29/49147
摘要： A MEM switch is described having a free moving element within in micro-cavity, and guided by at least one inductive element. The switch consists of an upper inductive coil; an optional lower inductive coil, each having a metallic core preferably made of permalloy; a micro-cavity; and a free-moving switching element preferably also made of magnetic material. Switching is achieved by passing a current through the upper coil, inducing a magnetic field in the coil element. The magnetic field attracts the free-moving magnetic element upwards, shorting two open wires and thus, closing the switch. When the current flow stops or is reversed, the free-moving magnetic element drops back by gravity to the bottom of the micro-cavity and the wires open. When the chip is not mounted with the correct orientation, gravity cannot be used. In such an instance, a lower coil becomes necessary to pull the free-moving switching element back and holding it at its original position.
摘要翻译： 描述了一种MEM开关，其具有在微腔内的自由移动元件，并由至少一个电感元件引导。 开关由上感应线圈组成; 可选的下感应线圈，每个具有优选由坡莫合金制成的金属芯; 微腔; 以及优选也由磁性材料制成的自由移动的开关元件。 通过使电流通过上部线圈来实现切换，从而在线圈元件中产生磁场。 磁场向上吸引自由移动的磁性元件，短路两根开放的电线，从而闭合开关。 当电流停止或反转时，自由移动的磁性元件通过重力返回到微腔的底部并且电线打开。 当芯片未正确安装时，重力不能使用。 在这种情况下，需要下部线圈将自由移动的开关元件拉回并将其保持在其原始位置。
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公开(公告)号：US07726010B2
公开(公告)日：2010-06-01
申请号：US11968896
申请日：2008-01-03
申请人： Louis C. Hsu , Lawrence A. Clevenger , Timothy J. Dalton , Carl J. Radens , Keith Kwong Hon Wong , Chih-Chao Yang
发明人： Louis C. Hsu , Lawrence A. Clevenger , Timothy J. Dalton , Carl J. Radens , Keith Kwong Hon Wong , Chih-Chao Yang
CPC分类号： H01H50/005 , H01H2050/007 , Y10T29/4902 , Y10T29/49105 , Y10T29/49147
摘要： A method of fabricating a MEMS switch having a free moving inductive element within in micro-cavity guided by at least one inductive coil. The switch consists of an upper inductive coil at one end of a micro-cavity; optionally, a lower inductive coil; and a free-moving inductive element preferably made of magnetic material. The coils are provided with an inner permalloy core. Switching is achieved by passing a current through the upper coil, inducing a magnetic field unto the inductive element. The magnetic field attracts the free-moving inductive element upwards, shorting two open conductive wires, closing the switch. When the current flow stops or is reversed, the free-moving magnetic element drops back by gravity to the bottom of the micro-cavity and the conductive wires open. When the chip is not mounted with the correct orientation, the lower coil pulls the free-moving inductive element back at its original position.
摘要翻译： 一种制造具有由至少一个感应线圈引导的微腔内的自由运动的感应元件的MEMS开关的方法。 开关由微腔一端的上感应线圈组成; 可选地，下感应线圈; 以及优选由磁性材料制成的自由移动的电感元件。 线圈设有内坡道合金芯。 通过使电流通过上部线圈，从而产生电感元件的磁场来实现切换。 磁场向上吸引自由移动的感应元件，短路两根开放的导线，闭合开关。 当电流停止或反转时，自由移动的磁性元件通过重力返回到微腔的底部并且导线打开。 当芯片没有以正确的方向安装时，下线圈将自由移动的感应元件拉回其原始位置。
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公开(公告)号：US07105445B2
公开(公告)日：2006-09-12
申请号：US11034890
申请日：2005-01-14
申请人： Kwong-Hon Wong , Louis C. Hsu , Timothy J. Dalton , Carl J. Radens , Chih-Chao Yang , Lawrence A. Clevenger , Theodorus E. Standaert
发明人： Kwong-Hon Wong , Louis C. Hsu , Timothy J. Dalton , Carl J. Radens , Chih-Chao Yang , Lawrence A. Clevenger , Theodorus E. Standaert
IPC分类号： H01L21/44
CPC分类号： H01L21/76852 , H01L21/288 , H01L21/2885 , H01L21/76885 , H01L23/5226 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： A method of making an interconnect which includes providing an interconnect structure in a dielectric material, recessing the dielectric material such that a portion of the interconnect structure extends above an upper surface of the dielectric and depositing an encasing cap over the extended portion of the interconnect structure.
摘要翻译： 一种制造互连的方法，其包括在介电材料中提供互连结构，使所述电介质材料凹陷，使得所述互连结构的一部分在所述电介质的上表面上方延伸，并且在所述互连结构的所述延伸部分上沉积包封盖 。
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公开(公告)号：US06452110B1
公开(公告)日：2002-09-17
申请号：US09897889
申请日：2001-07-05
IPC分类号： H05K109
CPC分类号： H05K3/02 , H01L21/288 , H01L21/32134 , H01L21/76885 , Y10T29/49155 , Y10T29/49156
摘要： A method and structure for producing metallic polymer conductor lines comprising of an alternative methodology to a traditional damascene approach, called a cloisonne or inverse damascene approach. The cloisonne approach comprises the steps of coating a photosensitive polymer such as pyrrole or aniline with a silver salt on a semiconductor substrate. Using standard photolithography and resist developing techniques, the conducting polymer is exposed to a wet chemical developer, removing a portion of the exposed conducting polymer region, leaving only conducting polymer lines on top of the substrate. Next, an insulating dielectric layer is deposited over the entire structure and a chemical mechanical polish planarization of the insulator is performed creating the conducting polymer lines. Included in another aspect of the invention is a method and structure for a self-planarizing interconnect material comprising a conductive polymer thereby reducing the number of processing steps relative to the prior art.
摘要翻译： 一种用于生产金属聚合物导体线的方法和结构，其包括传统大马士革方法的替代方法，称为景泰蓝或逆大马士革方法。 景泰蓝方法包括在半导体衬底上用银盐将光敏聚合物如吡咯或苯胺涂覆的步骤。 使用标准光刻和抗蚀显影技术，将导电聚合物暴露于湿化学显影剂，除去暴露的导电聚合物区域的一部分，仅在基底顶部留下导电聚合物线。 接下来，在整个结构上沉积绝缘电介质层，并进行绝缘体的化学机械抛光平面化，产生导电聚合物线。 包括在本发明的另一方面中的是一种用于自平坦化互连材料的方法和结构，其包括导电聚合物，从而减少相对于现有技术的加工步骤的数量。
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公开(公告)号：US07312529B2
公开(公告)日：2007-12-25
申请号：US11160669
申请日：2005-07-05
申请人： Lawrence Clevenger , Mukta G. Farooq , Louis L. Hsu , William F. Landers , Donna S. Zupanski-Nielsen , Carl J. Radens , Chih-Chao Yang
发明人： Lawrence Clevenger , Mukta G. Farooq , Louis L. Hsu , William F. Landers , Donna S. Zupanski-Nielsen , Carl J. Radens , Chih-Chao Yang
CPC分类号： H05K3/3436 , H01L23/13 , H01L23/49811 , H01L23/49816 , H01L23/49838 , H01L24/11 , H01L24/12 , H01L24/17 , H01L24/49 , H01L24/73 , H01L24/81 , H01L2224/0401 , H01L2224/0603 , H01L2224/06102 , H01L2224/13099 , H01L2224/131 , H01L2224/13111 , H01L2224/1403 , H01L2224/49109 , H01L2224/81801 , H01L2924/00013 , H01L2924/00014 , H01L2924/01006 , H01L2924/01029 , H01L2924/01047 , H01L2924/0105 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H05K2201/094 , H05K2201/09736 , H05K2201/09845 , Y02P70/613 , H01L2224/29099 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： An electrical structure and method comprising a first substrate electrically and mechanically connected to a second substrate. The first substrate comprises a first electrically conductive pad and a second electrically conductive pad. The second substrate comprises a third electrically conductive pad, a fourth electrically conductive pad, and a first electrically conductive member. The fourth electrically conductive pad comprises a height that is different than a height of the first electrically conductive member. The electrically conductive member is electrically and mechanically connected to the fourth electrically conductive pad. A first solder ball connects the first electrically conductive pad to the third electrically conductive pad. The first solder ball comprises a first diameter. A second solder ball connects the second electrically conductive pad to the first electrically conductive member. The second solder ball comprises a second diameter. The first diameter is greater than said second diameter.
摘要翻译： 一种电结构和方法，包括电和机械地连接到第二衬底的第一衬底。 第一基板包括第一导电焊盘和第二导电焊盘。 第二基板包括第三导电焊盘，第四导电焊盘和第一导电部件。 第四导电焊盘包括与第一导电构件的高度不同的高度。 导电构件电连接和机械地连接到第四导电垫。 第一焊球将第一导电焊盘连接到第三导电焊盘。 第一焊球包括第一直径。 第二焊球将第二导电焊盘连接到第一导电构件。 第二焊球包括第二直径。 第一直径大于所述第二直径。
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公开(公告)号：US08486511B2
公开(公告)日：2013-07-16
申请号：US13430177
申请日：2012-03-26
IPC分类号： B32B3/00
CPC分类号： H01L21/0338 , B81B2203/0369 , B81C1/00031 , B81C2201/0149 , B81C2201/0198 , B82Y30/00 , H01L21/0337 , H01L51/0017 , Y10S977/882 , Y10S977/887 , Y10S977/888 , Y10T428/24479 , Y10T428/2457 , Y10T428/24612 , Y10T428/24736 , Y10T428/24802
摘要： In one embodiment, Hexagonal tiles encompassing a large are divided into three groups, each containing ⅓ of all hexagonal tiles that are disjoined among one another. Openings for the hexagonal tiles in each group are formed in a template layer, and a set of self-assembling block copolymers is applied and patterned within each opening. This process is repeated three times to encompass all three groups, resulting in a self-aligned pattern extending over a wide area. In another embodiment, the large area is divided into rectangular tiles of two non-overlapping and complementary groups. Each rectangular area has a width less than the range of order of self-assembling block copolymers. Self-assembled self-aligned line and space structures are formed in each group in a sequential manner so that a line and space pattern is formed over a large area extending beyond the range of order.
摘要翻译： 在一个实施例中，包括大的六边形瓦片被分成三组，每组包含彼此分离的所有六边形瓦片的1/3。 每个组中的六边形瓦片的开口形成在模板层中，并且在每个开口内施加并组合一组自组装嵌段共聚物。 该过程重复三次以包含所有三组，导致在大面积上延伸的自对准图案。 在另一个实施例中，大面积被分成两个不重叠和互补组的矩形瓦片。 每个矩形区域的宽度小于自组装嵌段共聚物的顺序范围。 在每组中以顺序的方式形成自组装的自对准线和空间结构，使得在超过有序范围的大面积上形成线和空间图案。
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公开(公告)号：US08512849B2
公开(公告)日：2013-08-20
申请号：US11836253
申请日：2007-08-09
申请人： Lawrence A. Clevenger , Timothy J. Dalton , Elbert E. Huang , Sampath Purushothaman , Carl J. Radens
发明人： Lawrence A. Clevenger , Timothy J. Dalton , Elbert E. Huang , Sampath Purushothaman , Carl J. Radens
IPC分类号： B32B3/30
CPC分类号： H05K3/40 , H01B17/66 , H01L21/0337 , H01L21/31144 , H01L21/76822 , H01L23/53295 , H01L2924/0002 , Y10T156/1039 , Y10T156/1082 , Y10T428/24521 , Y10T428/24529 , Y10T428/24537 , Y10T428/24612 , Y10T428/24711 , H01L2924/00
摘要： Dielectric composite structures comprising interfaces possessing nanometer scale corrugated interfaces in interconnect stack provide enhances adhesion strength and interfacial fracture toughness. Composite structures further comprising corrugated adhesion promoter layers to further increase intrinsic interfacial adhesion are also described. Methods to form the nanometer scale corrugated interfaces for enabling these structures using self assembling polymer systems and pattern transfer process are also described.
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公开(公告)号：US08486512B2
公开(公告)日：2013-07-16
申请号：US13430179
申请日：2012-03-26
IPC分类号： B32B3/00
CPC分类号： H01L21/0338 , B81B2203/0369 , B81C1/00031 , B81C2201/0149 , B81C2201/0198 , B82Y30/00 , H01L21/0337 , H01L51/0017 , Y10S977/882 , Y10S977/887 , Y10S977/888 , Y10T428/24479 , Y10T428/2457 , Y10T428/24612 , Y10T428/24736 , Y10T428/24802
摘要： In one embodiment, Hexagonal tiles encompassing a large are divided into three groups, each containing ⅓ of all hexagonal tiles that are disjoined among one another. Openings for the hexagonal tiles in each group are formed in a template layer, and a set of self-assembling block copolymers is applied and patterned within each opening. This process is repeated three times to encompass all three groups, resulting in a self-aligned pattern extending over a wide area. In another embodiment, the large area is divided into rectangular tiles of two non-overlapping and complementary groups. Each rectangular area has a width less than the range of order of self-assembling block copolymers. Self-assembled self-aligned line and space structures are formed in each group in a sequential manner so that a line and space pattern is formed over a large area extending beyond the range of order.
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公开(公告)号：US08232211B1
公开(公告)日：2012-07-31
申请号：US13010326
申请日：2011-01-20
IPC分类号： H01L21/311
CPC分类号： B81C1/00031 , B81C2201/0149 , B81C2201/0198 , G03F1/36 , G03F7/0002
摘要： Methods for producing self-aligned, self-assembled sub-ground-rule features without the need to use additional lithographic patterning. Specifically, the present disclosure allows for the creation of assist features that are localized and self-aligned to a given structure. These assist features can either have the same tone or different tone to the given feature.
摘要翻译： 用于生产自对准，自组装次地基规则特征的方法，而不需要使用附加的光刻图案。 具体地，本公开允许创建对给定结构进行局部化和自对准的辅助特征。 这些辅助功能可以具有与给定功能相同的音调或不同的音调。
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公开(公告)号：US20090041989A1
公开(公告)日：2009-02-12
申请号：US11836253
申请日：2007-08-09
申请人： Lawrence A. Clevenger , Timothy J. Dalton , Elbert E. Huang , Sampath Purushothaman , Carl J. Radens
发明人： Lawrence A. Clevenger , Timothy J. Dalton , Elbert E. Huang , Sampath Purushothaman , Carl J. Radens
CPC分类号： H05K3/40 , H01B17/66 , H01L21/0337 , H01L21/31144 , H01L21/76822 , H01L23/53295 , H01L2924/0002 , Y10T156/1039 , Y10T156/1082 , Y10T428/24521 , Y10T428/24529 , Y10T428/24537 , Y10T428/24612 , Y10T428/24711 , H01L2924/00
摘要： Dielectric composite structures comprising interfaces possessing nanometer scale corrugated interfaces in interconnect stack provide enhances adhesion strength and interfacial fracture toughness. Composite structures further comprising corrugated adhesion promoter layers to further increase intrinsic interfacial adhesion are also described. Methods to form the nanometer scale corrugated interfaces for enabling these structures using self assembling polymer systems and pattern transfer process are also described.
摘要翻译： 包含在互连叠层中具有纳米级波纹界面的界面的介电复合结构提供了增强的粘合强度和界面断裂韧性。 还描述了进一步包含波纹粘合促进剂层以进一步增加本征界面粘合性的复合结构。 还描述了使用自组装聚合物体系和图案转移方法形成纳米级波纹界面以实现这些结构的方法。
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