公开(公告)号：US08835222B2

公开(公告)日：2014-09-16

申请号：US13623244

申请日：2012-09-20

申请人： Mathias Bruendel ,  Frieder Haag ,  Jens Frey ,  Rolf Speicher ,  Juergen Fritz ,  Lutz Rauscher

发明人： Mathias Bruendel ,  Frieder Haag ,  Jens Frey ,  Rolf Speicher ,  Juergen Fritz ,  Lutz Rauscher

IPC分类号： H01L21/00 ,  B81C1/00 ,  H01L21/56 ,  H01L21/50 ,  H01L23/48 ,  H01L23/00 ,  H01L23/544 ,  H01L21/768

CPC分类号： H01L23/48 ,  B81B2207/012 ,  B81B2207/096 ,  B81C1/00238 ,  B81C2203/0154 ,  B81C2203/0792 ,  H01L21/50 ,  H01L21/561 ,  H01L21/76898 ,  H01L23/544 ,  H01L24/11 ,  H01L24/13 ,  H01L24/17 ,  H01L24/81 ,  H01L24/92 ,  H01L24/94 ,  H01L24/97 ,  H01L2223/54426 ,  H01L2223/54466 ,  H01L2224/0401 ,  H01L2224/09181 ,  H01L2224/13025 ,  H01L2224/131 ,  H01L2224/13101 ,  H01L2224/16145 ,  H01L2224/16146 ,  H01L2224/16235 ,  H01L2224/17181 ,  H01L2224/9202 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2924/01012 ,  H01L2924/1433 ,  H01L2924/1461 ,  H01L2924/181 ,  H01L2224/81 ,  H01L2924/014 ,  H01L2924/00014 ,  H01L2224/11 ,  H01L2924/00

摘要： A method for producing a two-chip assembly includes: providing a wafer having a first thickness, which wafer has a front side and a back side, a first plurality of first chips being provided on the front side of the wafer; attaching a second plurality of second chips on the front side of the wafer, so that every first chip is joined in each instance to a second chip and forms a corresponding two-chip pair; forming a cohesive mold package on the front side of the wafer, so that the second chips are packaged; thinning the wafer from the back side to a second thickness which is less than the first thickness; forming vias from the back side to the second chips; and separating the two-chip pairs into corresponding two-chip assemblies.

摘要翻译： 一种用于制造双芯片组件的方法包括：提供具有第一厚度的晶片，该晶片具有前侧和后侧，在晶片的前侧设置有第一多个第一芯片; 在晶片的前侧附加第二多个第二芯片，使得每个第一芯片在每种情况下都连接到第二芯片并形成相应的双芯片对; 在所述晶片的前侧形成粘结的模具包，使得所述第二芯片被包装; 将晶片从背面变薄至小于第一厚度的第二厚度; 从后侧到第二芯片形成通孔; 并将两芯片对分离成相应的双芯片组件。

公开(公告)号：US09123716B2

公开(公告)日：2015-09-01

申请号：US13719799

申请日：2012-12-19

申请人： Julian Gonska ,  Heribert Weber ,  Jens Frey ,  Timo Schary ,  Thomas Mayer

发明人： Julian Gonska ,  Heribert Weber ,  Jens Frey ,  Timo Schary ,  Thomas Mayer

IPC分类号： H01L21/00 ,  H01L23/48 ,  H01L21/50 ,  H01L23/488 ,  H01L21/18 ,  B81C1/00 ,  H01L23/00

CPC分类号： H01L21/50 ,  B81B2201/0235 ,  B81B2201/0264 ,  B81C1/00269 ,  B81C2203/0118 ,  B81C2203/035 ,  H01L21/185 ,  H01L21/187 ,  H01L23/488 ,  H01L24/94 ,  H01L2224/83805 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/10253 ,  H01L2924/16251 ,  H01L2924/01013 ,  H01L2924/01032 ,  H01L2924/00

摘要： A method for bonding two silicon substrates and a corresponding system of two silicon substrates. The method includes: providing first and second silicon substrates; depositing a first bonding layer of pure aluminum or of aluminum-copper having a copper component between 0.1 and 5% on a first bonding surface of the first silicon substrate; depositing a second bonding layer of germanium above the first bonding surface or above a second bonding surface of the second silicon substrate; subsequently joining the first and second silicon substrates, so that the first and the second bonding surfaces lie opposite each other; and implementing a thermal treatment step to form an eutectic bonding layer of aluminum-germanium or containing aluminum-germanium as the main component, between the first silicon substrate and the second silicon substrate, spikes which contain aluminum as a minimum and extend into the first silicon substrate, forming at least on the first bonding surface.

摘要翻译： 一种用于接合两个硅衬底和两个硅衬底的对应系统的方法。 该方法包括：提供第一和第二硅衬底; 在第一硅衬底的第一接合表面上沉积具有0.1至5％铜含量的纯铝或铝 - 铜的第一接合层; 在所述第一接合表面上方或第二硅衬底的第二接合表面上方沉积锗的第二接合层; 随后接合第一和第二硅衬底，使得第一和第二接合表面彼此相对; 并且在第一硅衬底和第二硅衬底之间实现热处理步骤以形成铝锗或含有铝 - 锗的共晶结合层作为主要组分，最小含有铝并延伸到第一硅中的尖峰 衬底，至少形成在第一结合表面上。

公开(公告)号：US08647961B2

公开(公告)日：2014-02-11

申请号：US13198651

申请日：2011-08-04

申请人： Jens Frey ,  Heribert Weber ,  Eckhard Graf ,  Roman Schlosser

发明人： Jens Frey ,  Heribert Weber ,  Eckhard Graf ,  Roman Schlosser

IPC分类号： H01L21/76

CPC分类号： H01L21/76898 ,  H01L21/02118 ,  H01L21/02318 ,  H01L21/486 ,  H01L23/49827 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method is described for filling cavities in wafers, the cavities being open to a predetermined surface of the wafer, including the following steps: applying a lacquer-like filling material to the predetermined surface of the wafer; heating the wafer at a first temperature; driving out gas bubbles enclosed in the filling material by heating the wafer under vacuum at a second temperature which is equal to or higher than the first temperature; and curing the filling material by heating the wafer at a third temperature which is higher than the second temperature. Furthermore, also described is a blind hole filled using such a method and general 3D cavities as well as a wafer having insulation trenches of a silicon via filled using such a method.

摘要翻译： 描述了一种用于在晶片中填充空腔的方法，空腔朝向晶片的预定表面开放，包括以下步骤：将漆状填充材料施加到晶片的预定表面; 在第一温度下加热晶片; 通过在等于或高于第一温度的第二温度下在真空下加热晶片来驱除封闭在填充材料中的气泡; 以及通过在高于第二温度的第三温度下加热晶片来固化填充材料。 此外，还描述了使用这种方法和一般3D空腔填充的盲孔以及具有使用这种方法填充的硅通孔的绝缘沟槽的晶片。

公开(公告)号：US09266720B2

公开(公告)日：2016-02-23

申请号：US14059202

申请日：2013-10-21

申请人： Johannes Classen ,  Axel Franke ,  Jens Frey ,  Heribert Weber ,  Frank Fischer ,  Patrick Wellner ,  Mirko Hattass ,  Daniel Christoph Meisel

发明人： Johannes Classen ,  Axel Franke ,  Jens Frey ,  Heribert Weber ,  Frank Fischer ,  Patrick Wellner ,  Mirko Hattass ,  Daniel Christoph Meisel

IPC分类号： B81C1/00

CPC分类号： B81C1/00246 ,  B81C1/0023 ,  B81C2203/075 ,  B81C2203/0771 ,  H01L2224/48463

摘要： A component has at least one MEMS element and at least one cap made of a semiconductor material. The cap, in addition to its mechanical function as a terminus of a cavity and protection of the micromechanical structure, is provided with an electrical functionality. The micromechanical structure of the MEMS element of the component is situated in a cavity between a carrier and the cap, and includes at least one structural element which is deflectable out of the component plane within the cavity. The cap includes at least one section extending over the entire thickness of the cap, which is electrically insulated from the adjoining semiconductor material in such a way that it may be electrically contacted independently from the remaining sections of the cap.

摘要翻译： 元件具有至少一个MEMS元件和由半导体材料制成的至少一个盖。 盖子除了作为空腔的终端的机械功能以及微机械结构的保护之外，还具有电功能。 元件的MEMS元件的微机械结构位于载体和盖之间的空腔中，并且包括至少一个结构元件，其可在空腔内偏离组件平面。 该帽包括至少一个在盖的整个厚度上延伸的部分，其与相邻的半导体材料电绝缘，使得其可以独立于帽的其余部分电接触。

公开(公告)号：US09114978B2

公开(公告)日：2015-08-25

申请号：US13921419

申请日：2013-06-19

申请人： Jochen Reinmuth ,  Jens Frey ,  Yvonne Bergmann

发明人： Jochen Reinmuth ,  Jens Frey ,  Yvonne Bergmann

IPC分类号： H01L29/84 ,  B81C1/00 ,  B81B3/00 ,  B81B7/00

CPC分类号： B81C1/00134 ,  B81B3/0018 ,  B81B7/007 ,  B81B2207/095

摘要： A method for manufacturing a component having an electrical through-connection includes: providing a semiconductor substrate having a front side and a back side opposite from the front side; producing, on the front side of the semiconductor substrate, an insulating trench which annularly surrounds a contact area; introducing an insulating material into the insulating trench; producing a contact hole on the front side of the semiconductor substrate by removing the semiconductor material surrounded by the insulating trench in the contact area; and depositing a metallic material in the contact hole.

摘要翻译： 一种用于制造具有电穿通连接的部件的方法包括：提供具有前侧和与前侧相对的后侧的半导体衬底; 在所述半导体衬底的前侧产生环形地围绕接触区域的绝缘沟槽; 将绝缘材料引入绝缘沟槽中; 通过去除由接触区域中的绝缘沟槽围绕的半导体材料，在半导体衬底的正面上产生接触孔; 以及在所述接触孔中沉积金属材料。

公开(公告)号：US09040336B2

公开(公告)日：2015-05-26

申请号：US14058806

申请日：2013-10-21

申请人： Johannes Classen ,  Axel Franke ,  Jens Frey ,  Heribert Weber ,  Frank Fischer ,  Patrick Wellner

发明人： Johannes Classen ,  Axel Franke ,  Jens Frey ,  Heribert Weber ,  Frank Fischer ,  Patrick Wellner

IPC分类号： H01L21/00 ,  B81C1/00 ,  B81B3/00 ,  B81B7/00

CPC分类号： B81C1/00015 ,  B81B3/0018 ,  B81B7/0058

摘要： A manufacturing method for a cap, for a hybrid vertically integrated component having a MEMS component a relatively large cavern volume having a low cavern internal pressure, and a reliable overload protection for the micromechanical structure of the MEMS component. A cap structure is produced in a flat cap substrate in a multistep anisotropic etching, and includes at least one mounting frame having at least one mounting surface and a stop structure, on the cap inner side, having at least one stop surface, the surface of the cap substrate being masked for the multistep anisotropic etching with at least two masking layers made of different materials, and the layouts of the masking layers and the number and duration of the etching steps being selected so that the mounting surface, the stop surface, and the cap inner side are situated at different surface levels of the cap structure.

摘要翻译： 一种用于具有MEMS部件的混合垂直集成部件的盖的制造方法，具有较低的洞穴内部压力的相对较大的洞穴体积以及用于MEMS部件的微机械结构的可靠的过载保护。 在多步骤各向异性蚀刻中，在平盖基板中制造盖结构，并且包括至少一个安装框架，该安装框架具有至少一个安装表面和止动结构，在盖内侧具有至少一个止动表面， 掩模基板被掩模用于具有由不同材料制成的至少两个掩模层的多步各向异性蚀刻，并且选择掩模层的布局以及蚀刻步骤的数量和持续时间，使得安装表面，止动表面和 帽内侧位于帽结构的不同表面水平处。

公开(公告)号：US08748998B2

公开(公告)日：2014-06-10

申请号：US13206024

申请日：2011-08-09

申请人： Jens Frey ,  Heribert Weber ,  Eckhard Graf

发明人： Jens Frey ,  Heribert Weber ,  Eckhard Graf

IPC分类号： H01L29/84

CPC分类号： G01P15/125 ,  B81B7/02 ,  B81B2207/07 ,  B81B2207/095 ,  B81B2207/096 ,  B81B2207/097 ,  B81C2203/0118 ,  B81C2203/035 ,  G01L9/0048 ,  G01L9/0052 ,  G01L9/0073 ,  G01L19/0076 ,  G01L19/0092 ,  G01P15/0802 ,  G01R33/0286

摘要： A sensor module includes a substrate system which has multiple substrates situated one on top of the other and connected in each case via a wafer bond connection. The substrate system includes at least one first sensor substrate and at least one second sensor substrate, the first sensor substrate having a first sensor structure and the second sensor substrate having a second sensor structure. The first and second sensor structures are designed for detecting different characteristics. At least the first sensor structure includes a micromechanical functional structure. Moreover, a method for manufacturing such a sensor module is disclosed.

摘要翻译： 传感器模块包括具有多个基板的基板系统，该基板一个在另一个之上并且通过晶片接合连接在每种情况下连接。 衬底系统包括至少一个第一传感器衬底和至少一个第二传感器衬底，第一传感器衬底具有第一传感器结构，第二传感器衬底具有第二传感器结构。 第一和第二传感器结构被设计用于检测不同的特性。 至少第一传感器结构包括微机械功能结构。 此外，公开了一种用于制造这种传感器模块的方法。

公开(公告)号：US20080315332A1

公开(公告)日：2008-12-25

申请号：US12090566

申请日：2006-11-29

申请人： Arnd Kaelberer ,  Jens Frey

发明人： Arnd Kaelberer ,  Jens Frey

IPC分类号： H01L29/84 ,  H01L21/00 ,  G11B5/65

CPC分类号： B81C1/00984 ,  B81B3/001 ,  B81C2201/115 ,  Y10T428/24355

摘要： A micromechanical component has a substrate, a first intermediate layer which is situated thereupon, and a first layer which is situated thereupon and is structured down to the first intermediate layer. A second intermediate layer is situated above the first layer. A second layer is situated on the former, at least one movable micromechanical structure being structured into the second layer. The second intermediate layer is removed in a sacrificial zone beneath the movable micromechanical structure and the first intermediate layer is partially removed in zones beneath the first layer. The movable micromechanical structure is provided with at least one stop surface on a bottom face, this stop surface being contactable with a zone of the first layer which is supported by the first intermediate layer by deflection of the movable micromechanical structure. A method for producing such a micromechanical component is also described.

摘要翻译： 微机械部件具有衬底，位于其上的第一中间层和位于其上并且被构造成第一中间层的第一层。 第二中间层位于第一层上方。 第二层位于前者上，至少一个可移动微机械结构被构造成第二层。 第二中间层在可移动微机械结构下面的牺牲区域中被去除，并且第一中间层在第一层下面的区域中被部分地去除。 可移动微机械结构在底面上设置有至少一个止动表面，该止动表面可通过可移动微机械结构的偏转而与第一层的区域接触，该区域由第一中间层支撑。 还描述了一种用于制造这种微机械部件的方法。

公开(公告)号：US07316161B2

公开(公告)日：2008-01-08

申请号：US10471832

申请日：2002-09-25

申请人： Rainer Willig ,  Jochen Franz ,  Burkhard Kuhlmann ,  Joerg Hauer ,  Udo-Martin Gomez ,  Dieter Maurer ,  Christian Doering ,  Wolfram Bauer ,  Udo Bischof ,  Reinhard Neul ,  Johannes Classen ,  Christoph Lang ,  Jens Frey

发明人： Rainer Willig ,  Jochen Franz ,  Burkhard Kuhlmann ,  Joerg Hauer ,  Udo-Martin Gomez ,  Dieter Maurer ,  Christian Doering ,  Wolfram Bauer ,  Udo Bischof ,  Reinhard Neul ,  Johannes Classen ,  Christoph Lang ,  Jens Frey

IPC分类号： G01C19/00

CPC分类号： G01C19/5747

摘要： A rotation rate sensor having a substrate and a Coriolis element is proposed, the Coriolis element being situated above a surface of a substrate; the Coriolis element being able to be induced to vibrate in parallel to a first axis (X); an excursion of the Coriolis element being detectable, based on a Coriolis force in a second axis (Y), which is provided to be essentially perpendicular to the first axis (X); the first and second axes (X, Y) being provided parallel to the surface of the substrate, wherein force-conveying means are provided, the means being provided to convey a dynamic force effect between the substrate and the Coriolis element.

摘要翻译： 提出了具有基板和科里奥利元件的旋转速率传感器，科里奥利元件位于基板的表面之上; 所述科里奥利元件能够被诱导以平行于第一轴线（X）振动; 基于在第二轴线（Y）上的科里奥利力，基本上垂直于第一轴线（X）提供可检测的科里奥利元件的偏移; 所述第一和第二轴线（X，Y）平行于所述基板的表面设置，其中设置有力传递装置，所述装置被提供以在所述基板和所述科里奥利元件之间传递动态力效应。

公开(公告)号：US09034757B2

公开(公告)日：2015-05-19

申请号：US13923035

申请日：2013-06-20

申请人： Jochen Reinmuth ,  Jens Frey ,  Yvonne Bergmann

发明人： Jochen Reinmuth ,  Jens Frey ,  Yvonne Bergmann

IPC分类号： H01L21/44 ,  H01L21/762 ,  H01L23/48 ,  B81B7/00 ,  B81C1/00 ,  H01L23/00

CPC分类号： H01L21/76224 ,  B81B7/007 ,  B81B2207/096 ,  B81C1/00095 ,  H01L21/76898 ,  H01L23/481 ,  H01L24/02 ,  H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L24/92 ,  H01L24/94 ,  H01L2224/02311 ,  H01L2224/05009 ,  H01L2224/29111 ,  H01L2224/29117 ,  H01L2224/29124 ,  H01L2224/29147 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/83193 ,  H01L2224/83805 ,  H01L2224/92 ,  H01L2224/9202 ,  H01L2224/94 ,  H01L2924/12042 ,  H01L2924/1461 ,  H01L2924/351 ,  H01L2224/0231 ,  H01L2224/83 ,  H01L21/78 ,  H01L2924/00014 ,  H01L2924/01032 ,  H01L2924/00

摘要： A method for manufacturing a component having an electrical through-connection is described. The method includes the following steps: providing a semiconductor substrate having a front side and a back side opposite from the front side, producing an insulating trench, which annularly surrounds a contact area, on the front side of the semiconductor substrate, filling the insulating trench with an insulating material, producing an electrical contact structure on the front side of the semiconductor substrate by depositing an electrically conductive material in the contact area, removing the semiconductor material remaining in the contact area on the back side of the semiconductor substrate in order to produce a contact hole which opens up the bottom side of the contact structure, and depositing a metallic material in the contact hole in order to electrically connect the electrical contact structure to the back side of the semiconductor substrate.

摘要翻译： 描述了一种用于制造具有电穿通连接的部件的方法。 该方法包括以下步骤：提供具有与前侧相反的前侧和后侧的半导体衬底，在半导体衬底的正面上产生环形地包围接触区域的绝缘沟槽，填充绝缘沟槽 具有绝缘材料，通过在接触区域中沉积导电材料，在半导体衬底的正面上产生电接触结构，去除残留在半导体衬底背面接触区域中的半导体材料，以便产生 接触孔，其向开放接触结构的底侧开口，并且在接触孔中沉积金属材料，以将电接触结构电连接到半导体衬底的背面。