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    Semiconductor device
    3.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US08415664B2

    公开(公告)日：2013-04-09

    申请号：US13271272

    申请日：2011-10-12

    申请人： Tatsuya Arao ,  Daiki Yamada ,  Hidekazu Takahashi ,  Naoto Kusumoto ,  Kazuo Nishi ,  Yuusuke Sugawara ,  Hironobu Takahashi

    发明人： Tatsuya Arao ,  Daiki Yamada ,  Hidekazu Takahashi ,  Naoto Kusumoto ,  Kazuo Nishi ,  Yuusuke Sugawara ,  Hironobu Takahashi

    IPC分类号： H01L31/0232

    CPC分类号： H01L27/14632 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14625 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14687 ,  H01L27/14689 ,  H01L27/14692

    摘要： Techniques are provided for obtaining a photoelectric conversion device having a favorable spectral sensitivity characteristic and reduced variation in output current without a contamination substance mixed into a photoelectric conversion layer or a transistor, and for obtaining a highly reliable semiconductor device including a photoelectric conversion device. A semiconductor device may include, over an insulating surface, a first electrode; a second electrode; a color filter between the first electrode and the second electrode; an overcoat layer covering the color filter; and a photoelectric conversion layer over the overcoat layer, where one end portion of the photoelectric conversion layer is in contact with the first electrode, and where an end portion of the color filter lies inside the other end portion of the photoelectric conversion layer.

    摘要翻译： 提供了用于获得具有良好的光谱灵敏度特性和减少的输出电流变化的光电转换装置的技术，而没有混入光电转换层或晶体管中的污染物质，并且用于获得包括光电转换装置的高度可靠的半导体装置。 半导体器件可以在绝缘表面上包括第一电极; 第二电极; 在第一电极和第二电极之间的滤色器; 覆盖滤色器的外涂层; 以及在所述外涂层上的光电转换层，其中所述光电转换层的一个端部与所述第一电极接触，并且所述滤色器的端部位于所述光电转换层的另一端部的内部。

    SEMICONDUCTOR DEVICE
    5.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号：US20120086006A1

    公开(公告)日：2012-04-12

    申请号：US13271272

    申请日：2011-10-12

    申请人： Tatsuya Arao ,  Daiki Yamada ,  Hidekazu Takahashi ,  Naoto Kusumoto ,  Kazuo Nishi ,  Yuusuke Sugawara ,  Hironobu Takahashi

    发明人： Tatsuya Arao ,  Daiki Yamada ,  Hidekazu Takahashi ,  Naoto Kusumoto ,  Kazuo Nishi ,  Yuusuke Sugawara ,  Hironobu Takahashi

    IPC分类号： H01L31/0232

    CPC分类号： H01L27/14632 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14625 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14687 ,  H01L27/14689 ,  H01L27/14692

    摘要： Techniques are provided for obtaining a photoelectric conversion device having a favorable spectral sensitivity characteristic and reduced variation in output current without a contamination substance mixed into a photoelectric conversion layer or a transistor, and for obtaining a highly reliable semiconductor device including a photoelectric conversion device. A semiconductor device may include, over an insulating surface, a first electrode; a second electrode; a color filter between the first electrode and the second electrode; an overcoat layer covering the color filter; and a photoelectric conversion layer over the overcoat layer, where one end portion of the photoelectric conversion layer is in contact with the first electrode, and where an end portion of the color filter lies inside the other end portion of the photoelectric conversion layer.

    摘要翻译： 提供了用于获得具有良好的光谱灵敏度特性和减少的输出电流变化的光电转换装置的技术，而没有混入光电转换层或晶体管中的污染物质，并且用于获得包括光电转换装置的高度可靠的半导体装置。 半导体器件可以在绝缘表面上包括第一电极; 第二电极; 在第一电极和第二电极之间的滤色器; 覆盖滤色器的外涂层; 以及在所述外涂层上的光电转换层，其中所述光电转换层的一个端部与所述第一电极接触，并且所述滤色器的端部位于所述光电转换层的另一端部的内部。

    Photoelectric conversion device, manufacturing method thereof and semiconductor device
    6.
    发明授权
    Photoelectric conversion device, manufacturing method thereof and semiconductor device 有权
    光电转换装置及其制造方法以及半导体装置

    公开(公告)号：US08138004B2

    公开(公告)日：2012-03-20

    申请号：US12821201

    申请日：2010-06-23

    申请人： Yuusuke Sugawara ,  Kazuo Nishi ,  Tatsuya Arao ,  Daiki Yamada ,  Hidekazu Takahashi ,  Naoto Kusumoto

    发明人： Yuusuke Sugawara ,  Kazuo Nishi ,  Tatsuya Arao ,  Daiki Yamada ,  Hidekazu Takahashi ,  Naoto Kusumoto

    IPC分类号： H01L21/00

    CPC分类号： H01L31/1055 ,  H01L31/02162 ,  H01L31/022408 ,  H01L31/02325

    摘要： A manufacturing method of a photoelectric conversion device includes the following steps: forming a first electrode over a substrate; and, over the first electrode, forming a photoelectric conversion layer that includes a first conductive layer having one conductivity, a second semiconductor layer, and a third semiconductor layer having a conductivity opposite to the one conductivity of the second semiconductor layer over the first electrode. The manufacturing method further includes the step of removing a part of the second semiconductor layer and a part of the third semiconductor layer in a region of the photoelectric conversion layer so that the third semiconductor layer does not overlap the first electrode.

    摘要翻译： 光电转换装置的制造方法包括以下步骤：在基板上形成第一电极; 并且在所述第一电极上形成光电转换层，所述光电转换层包括具有一个导电性的第一导电层，第二半导体层和具有与所述第一电极上的所述第二半导体层的一个电导率相反的导电性的第三半导体层。 该制造方法还包括在光电转换层的区域中去除第二半导体层的一部分和第三半导体层的一部分的步骤，使得第三半导体层不与第一电极重叠。

    Semiconductor device
    7.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US08049157B2

    公开(公告)日：2011-11-01

    申请号：US12949301

    申请日：2010-11-18

    申请人： Kazuo Nishi ,  Tatsuya Arao ,  Atsushi Hirose ,  Yuusuke Sugawara ,  Naoto Kusumoto ,  Daiki Yamada ,  Hidekazu Takahashi

    发明人： Kazuo Nishi ,  Tatsuya Arao ,  Atsushi Hirose ,  Yuusuke Sugawara ,  Naoto Kusumoto ,  Daiki Yamada ,  Hidekazu Takahashi

    IPC分类号： H03F3/08 ,  H03K17/78 ,  H01J40/14 ,  H04N3/14 ,  H01L31/062

    CPC分类号： H01L31/102 ,  G01J1/44 ,  H01L31/145 ,  H04N5/2351

    摘要： The present invention provides a photoelectric conversion device capable of detecting light from weak light to strong light and relates to a photoelectric conversion device having a photodiode having a photoelectric conversion layer; an amplifier circuit including a transistor; and a switch, where the photodiode and the amplifier circuit are electrically connected to each other by the switch when intensity of entering light is lower than predetermined intensity so that a photoelectric current is amplified by the amplifier circuit to be outputted, and the photodiode and part or all of the amplifier circuits are electrically disconnected by the switch so that a photoelectric current is reduced in an amplification factor to be outputted. According to such a photoelectric conversion device, light from weak light to strong light can be detected.

    摘要翻译： 本发明提供一种能够检测弱光到强光的光的光电转换装置，涉及具有光电转换层的光电二极管的光电转换装置; 包括晶体管的放大器电路; 以及开关，其中当入射光的强度低于预定强度时，光电二极管和放大器电路通过开关彼此电连接，使得光电流被放大器电路放大以输出，并且光电二极管和部分 或者所有的放大器电路都被开关电断开，使得放大系数中的光电流减小以被输出。 根据这样的光电转换装置，能够检测弱光到强光的光。

    Semiconductor device and manufacturing method of semiconductor device
    8.
    发明授权
    Semiconductor device and manufacturing method of semiconductor device 有权
    半导体器件及半导体器件的制造方法

    公开(公告)号：US08039353B2

    公开(公告)日：2011-10-18

    申请号：US12854060

    申请日：2010-08-10

    申请人： Yoshitaka Dozen ,  Tomoyuki Aoki ,  Hidekazu Takahashi ,  Daiki Yamada ,  Eiji Sugiyama ,  Kaori Ogita ,  Naoto Kusumoto

    发明人： Yoshitaka Dozen ,  Tomoyuki Aoki ,  Hidekazu Takahashi ,  Daiki Yamada ,  Eiji Sugiyama ,  Kaori Ogita ,  Naoto Kusumoto

    IPC分类号： H01L21/027 ,  H01L21/033 ,  H01L21/78

    CPC分类号： H01L23/293 ,  H01L23/49855 ,  H01L23/66 ,  H01L27/1248 ,  H01L27/1266 ,  H01L27/13 ,  H01L28/10 ,  H01L2223/6677 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

    摘要： The present invention provides a thin and bendable semiconductor device utilizing an advantage of a flexible substrate used in the semiconductor device, and a method of manufacturing the semiconductor device. The semiconductor device has at least one surface covered by an insulating layer which serves as a substrate for protection. In the semiconductor device, the insulating layer is formed over a conductive layer serving as an antenna such that the value in the thickness ratio of the insulating layer in a portion not covering the conductive layer to the conductive layer is at least 1.2, and the value in the thickness ratio of the insulating layer formed over the conductive layer to the conductive layer is at least 0.2. Further, not the conductive layer but the insulating layer is exposed in the side face of the semiconductor device, and the insulating layer covers a TFT and the conductive layer. In addition, a substrate covering an element formation layer side is a substrate having a support on its surface is used in the manufacturing process.

    摘要翻译： 本发明提供了利用半导体器件中使用的柔性衬底的优点的薄且可弯曲的半导体器件以及半导体器件的制造方法。 半导体器件具有被绝缘层覆盖的至少一个表面，该绝缘层用作用于保护的衬底。 在半导体器件中，绝缘层形成在用作天线的导电层上，使得不覆盖导电层的部分中的绝缘层的厚度比值至少为1.2，并且该值 在导电层上形成的绝缘层与导电层的厚度比为至少0.2。 此外，导电层而不是绝缘层不会在半导体器件的侧面露出，并且绝缘层覆盖TFT和导电层。 此外，在制造过程中使用覆盖元件形成层侧的基板是其表面上具有支撑体的基板。

    PHOTOELECTRIC CONVERSION DEVICE, MANUFACTURING METHOD THEREOF AND SEMICONDUCTOR DEVICE
    9.
    发明申请
    PHOTOELECTRIC CONVERSION DEVICE, MANUFACTURING METHOD THEREOF AND SEMICONDUCTOR DEVICE 有权
    光电转换装置及其半导体装置的制造方法

    公开(公告)号：US20100330729A1

    公开(公告)日：2010-12-30

    申请号：US12821201

    申请日：2010-06-23

    申请人： Yuusuke Sugawara ,  Kazuo Nishi ,  Tatsuya Arao ,  Daiki Yamada ,  Hidekazu Takahashi ,  Naoto Kusumoto

    发明人： Yuusuke Sugawara ,  Kazuo Nishi ,  Tatsuya Arao ,  Daiki Yamada ,  Hidekazu Takahashi ,  Naoto Kusumoto

    IPC分类号： H01L31/18 ,  H01L31/0232

    CPC分类号： H01L31/1055 ,  H01L31/02162 ,  H01L31/022408 ,  H01L31/02325

    摘要： The present invention provides a photoelectric conversion device in which a leakage current is suppressed. A photoelectric conversion device of the present invention comprises: a first electrode over a substrate; a photoelectric conversion layer including a first conductive layer having one conductivity, a second semiconductor layer, and a third semiconductor layer having a conductivity opposite to the one conductivity of the second semiconductor layer over the first electrode, wherein an end portion of the first electrode is covered with the first semiconductor layer; an insulating film, and a second electrode electrically connected to the third semiconductor film with the insulating film therebetween, over the insulating film, are formed over the third semiconductor film, and wherein a part of the second semiconductor layer and a part of the third semiconductor layer is removed in a region of the photoelectric conversion layer, which is not covered with the insulating film.

    摘要翻译： 本发明提供抑制漏电流的光电转换装置。 本发明的光电转换装置包括：基板上的第一电极; 光电转换层，包括具有一个导电性的第一导电层，第二半导体层和具有与第一电极上的第二半导体层的一个导电率相反的导电性的第三半导体层，其中第一电极的端部为 覆盖第一半导体层; 在所述第三半导体膜上形成绝缘膜和在所述绝缘膜上与所述第三半导体膜电绝缘膜电连接的第二电极，并且其中所述第二半导体层的一部分和所述第三半导体的一部分 在光电转换层的未被绝缘膜覆盖的区域中去除层。

    SEMICONDUCTOR DEVICE
    10.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号：US20090121119A1

    公开(公告)日：2009-05-14

    申请号：US12350271

    申请日：2009-01-08

    申请人： Kazuo Nishi ,  Tatsuya Arao ,  Atsushi Hirose ,  Yuusuke Sugawara ,  Naoto Kusumoto ,  Daiki Yamada ,  Hidekazu Takahashi

    发明人： Kazuo Nishi ,  Tatsuya Arao ,  Atsushi Hirose ,  Yuusuke Sugawara ,  Naoto Kusumoto ,  Daiki Yamada ,  Hidekazu Takahashi

    IPC分类号： H03F3/08

    CPC分类号： H01L31/102 ,  G01J1/44 ,  H01L31/145 ,  H04N5/2351

    摘要： The present invention provides a photoelectric conversion device capable of detecting light from weak light to strong light and relates to a photoelectric conversion device having a photodiode having a photoelectric conversion layer; an amplifier circuit including a transistor; and a switch, where the photodiode and the amplifier circuit are electrically connected to each other by the switch when intensity of entering light is lower than predetermined intensity so that a photoelectric current is amplified by the amplifier circuit to be outputted, and the photodiode and part or all of the amplifier circuits are electrically disconnected by the switch so that a photoelectric current is reduced in an amplification factor to be outputted. According to such a photoelectric conversion device, light from weak light to strong light can be detected.

    摘要翻译： 本发明提供一种能够检测弱光到强光的光的光电转换装置，涉及具有光电转换层的光电二极管的光电转换装置; 包括晶体管的放大器电路; 以及开关，其中当入射光的强度低于预定强度时，光电二极管和放大器电路通过开关彼此电连接，使得光电流被放大器电路放大以输出，并且光电二极管和部分 或者所有的放大器电路都被开关电断开，使得放大系数中的光电流减小以被输出。 根据这样的光电转换装置，能够检测弱光到强光的光。