公开(公告)号：US20170365749A1

公开(公告)日：2017-12-21

申请号：US15543881

申请日：2016-01-26

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Wolfgang Mönch ,  Britta Göötz ,  Frank Singer ,  Martin Straßburg ,  Tilman Schimpke

IPC: H01L33/50 ,  G02F1/1335 ,  H01L33/56 ,  H01L33/58 ,  H01L33/60 ,  H01L33/48

Abstract: An optoelectronic arrangement having a radiation conversion element and a method for producing a radiation conversion element are disclosed. In an embodiment, an optoelectronic arrangement includes a semiconductor chip having an active region configured to generate radiation, a radiation conversion element arranged downstream of the semiconductor chip in an emission direction and a reflective polarization element arranged downstream of the radiation conversion element in the emission direction. The radiation conversion element has a plurality of conversion elements, each of which has an axis of symmetry, the spatial orientation of the axes of symmetry has a preferred direction and a radiation emitted by the radiation conversion element has a preferred polarization. The reflective polarization element largely allows radiation with the preferred polarization to pass through and largely reflects radiation polarized perpendicularly to the preferred polarization.

公开(公告)号：US20150021636A1

公开(公告)日：2015-01-22

申请号：US14382286

申请日：2013-02-20

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Martin Mandl ,  Martin Straßburg ,  Christopher Kölper ,  Alexander Pfeuffer ,  Patrick Rode ,  Johannes Ledig ,  Richard Neumann ,  Andreas Waag

IPC: H01L33/08 ,  H01L33/62 ,  H01L33/42 ,  H01L33/18

CPC classification number: H01L33/08 ,  H01L33/16 ,  H01L33/18 ,  H01L33/24 ,  H01L33/385 ,  H01L33/42 ,  H01L33/50 ,  H01L33/62 ,  H01L2933/0016

Abstract: An optoelectronic semiconductor chip includes a number active regions that are arranged at a distance from each other and a substrate that is arranged on an underside of the active regions. One of the active regions has a main extension direction. The active region has a core region that is formed using a first semiconductor material. The active region has an active layer that covers the core region at least in directions perpendicular to the main extension direction of the active region. The active region has a cover layer that is formed using a second semiconductor material and covers the active layer at least in directions perpendicular to the main extension direction of the active region.

Abstract translation: 光电子半导体芯片包括彼此间隔一定距离设置的多个有源区和布置在有源区的下侧的衬底。 其中一个活跃区域有一个主要的延伸方向。 有源区具有使用第一半导体材料形成的芯区。 有源区域具有至少在垂直于有源区域的主延伸方向的方向上覆盖芯区域的有源层。 有源区具有使用第二半导体材料形成的覆盖层，并且至少在垂直于有源区的主延伸方向的方向上覆盖有源层。

公开(公告)号：US20160087150A1

公开(公告)日：2016-03-24

申请号：US14785090

申请日：2014-04-17

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： Jelena Ristic ,  Martin Straßburg ,  Martin Mandl ,  Alfred Lell

IPC: H01L33/24 ,  H01L33/14 ,  H01L25/075 ,  H01L33/32 ,  H01L33/00 ,  H01L33/06 ,  H01L33/18

CPC classification number: H01S5/2077 ,  H01L25/0753 ,  H01L27/156 ,  H01L33/0075 ,  H01L33/06 ,  H01L33/14 ,  H01L33/18 ,  H01L33/24 ,  H01L33/32 ,  H01L2924/0002 ,  H01L2933/0033 ,  H01S5/18 ,  H01S5/183 ,  H01S5/4025 ,  H01S5/405 ,  H01S5/42 ,  H01L2924/00

Abstract: An assembly has a columnar structure arranged with one end on a substrate, wherein the structure is at least partly covered with a semiconductor layer structure having an active zone that generates electromagnetic radiation, the active zone has a band gap for a radiative recombination, and the band gap decreases along a longitudinal axis of the structure in a direction of a free end of the structure such that a diffusion of charge carriers in the direction of the free end of the structure and a radiative recombination of charge carrier pairs in the region of the free end of the structure are supported.

Abstract translation: 组件具有一个柱状结构，其一端设置在衬底上，其中该结构至少部分被半导体层结构覆盖，该半导体层结构具有产生电磁辐射的有源区，该活性区具有用于辐射复合的带隙， 带隙沿结构的纵向轴线在结构的自由端的方向上减小，使得电荷载体在结构的自由端的方向上的扩散以及电荷载体对在该结构的区域中的辐射复合 支持结构的自由端。

公开(公告)号：US11069835B2

公开(公告)日：2021-07-20

申请号：US16495803

申请日：2018-03-16

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Adrian Stefan Avramescu ,  Tansen Varghese ,  Martin Straßburg ,  Hans-Jürgen Lugauer ,  Sönke Fündling ,  Jana Hartmann ,  Frederik Steib ,  Andreas Waag

IPC: H01L33/20 ,  H01L25/075 ,  H01L33/00

Abstract: An optoelectronic semiconductor chip and a method for manufacturing a semiconductor chip are disclosed. In an embodiment an optoelectronic semiconductor chip includes a plurality of fins and a current expansion layer for common contacting of at least some of the fins, wherein each fin includes two side surfaces arranged opposite one another and an active region arranged on each of the side surfaces, wherein the plurality of fins include inner fins and outer fins having an adjacent fin only on one side, and wherein the current expansion layer is in direct contact with the inner fins on their outside.

公开(公告)号：US20200028029A1

公开(公告)日：2020-01-23

申请号：US16495803

申请日：2018-03-16

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Adrian Stefan Avramescu ,  Tansen Varghese ,  Martin Straßburg ,  Hans-Jürgen Lugauer ,  Sönke Fündling ,  Jana Hartmann ,  Frederik Steib ,  Andreas Waag

IPC: H01L33/20 ,  H01L33/00 ,  H01L25/075

Abstract: An optoelectronic semiconductor chip and a method for manufacturing a semiconductor chip are disclosed. In an embodiment an optoelectronic semiconductor chip includes a plurality of fins and a current expansion layer for common contacting of at least some of the fins, wherein each fin includes two side surfaces arranged opposite one another and an active region arranged on each of the side surfaces, wherein the plurality of fins include inner fins and outer fins having an adjacent fin only on one side, and wherein the current expansion layer is in direct contact with the inner fins on their outside.

公开(公告)号：US20160126702A1

公开(公告)日：2016-05-05

申请号：US14895120

申请日：2014-06-03

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： Jelena Ristic ,  Martin Straßburg ,  Alfred Lell ,  Uwe Strauß

IPC: H01S5/34 ,  H01S5/343 ,  H01S5/40 ,  H01S5/02

CPC classification number: H01S5/3428 ,  H01L27/156 ,  H01L33/007 ,  H01L33/10 ,  H01L33/16 ,  H01L33/24 ,  H01L33/405 ,  H01L33/46 ,  H01S5/0207 ,  H01S5/0217 ,  H01S5/02236 ,  H01S5/1042 ,  H01S5/1835 ,  H01S5/18377 ,  H01S5/341 ,  H01S5/34333 ,  H01S5/4025 ,  H01S5/4087 ,  H01S5/423

Abstract: An assembly includes a carrier and a structure having a core formed on the carrier, wherein the core has a longitudinal extension having two end regions, a first end region is arranged facing the carrier and a second end region is arranged facing away from the carrier, the core is formed as electrically conductive at least in an outer region, the region is at least partially covered with an active zone layer, the active zone layer generates electromagnetic radiation, a mirror layer is provided at least in one end region of the core to reflect electromagnetic radiation in a direction, a first electrical contact layer contacts an electrically conductive region of the core, and a second contact layer contacts the active zone layer.

Abstract translation: 组件包括载体和具有形成在载体上的芯的结构，其中芯具有具有两个端部区域的纵向延伸部，第一端部区域面向载体布置，并且第二端部区域布置成背离载体， 所述芯至少在外部区域中形成为导电的，所述区域至少部分地被活性区域层覆盖，所述活性区域层产生电磁辐射，在所述芯的至少一个端部区域中提供镜层的镜层 反射电磁辐射的方向，第一电接触层接触芯的导电区域，第二接触层接触有源区层。

公开(公告)号：US20150349215A1

公开(公告)日：2015-12-03

申请号：US14760177

申请日：2013-12-18

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： Britta Göötz ,  Wolfgang Mönch ,  Martin Straßburg

IPC: H01L33/50 ,  H01L33/56 ,  H01L27/15 ,  H01L33/32

CPC classification number: H01L33/502 ,  C08G61/02 ,  C08G2261/3142 ,  C08G2261/3422 ,  C08G2261/5222 ,  C08G2261/95 ,  C09K11/06 ,  C09K2211/1416 ,  H01L27/15 ,  H01L33/08 ,  H01L33/18 ,  H01L33/32 ,  H01L33/505 ,  H01L33/507 ,  H01L33/56

Abstract: An optoelectronic semiconductor chip includes a number of active elements arranged at a distance from one another. A carrier is arranged transversely of the active elements. The active elements each have a main axis that extends perpendicularly to the carrier and are oriented parallel to one another. A converter material surrounds the active elements on circumferential faces. The converter material includes a conversion substance or a conversion substance and a matrix material. The active elements each have a central core region that is enclosed by at least two layers such that an active layer encloses the core region and a cover layer encloses the active layer. The core region is formed with a first semiconductor material. The active layer includes a light-emitting material. The cover layer is formed with a second semiconductor material and can have a layer thickness between 0.1 nm and 100 n.

Abstract translation: 光电半导体芯片包括彼此间隔一定距离排列的多个有源元件。 载体横向于有源元件布置。 有源元件各自具有垂直于载体延伸并且彼此平行取向的主轴。 转换器材料围绕圆周面上的有源元件。 转换器材料包括转化物质或转化物质和基质材料。 活性元件各自具有由至少两层包围的中心芯区域，使得活性层包围芯区域，并且覆盖层包围活性层。 芯区域形成有第一半导体材料。 有源层包括发光材料。 覆盖层由第二半导体材料形成，并且可以具有0.1nm和100n之间的层厚度。