公开(公告)号：US20210111590A1

公开(公告)日：2021-04-15

申请号：US16496710

申请日：2018-02-19

Applicant: Panasonic Corporation

Inventor： Yasufumi Kawai ,  Songbaek Choe ,  Shingo Enomoto ,  Noboru Negoro ,  Shuichi Nagai

IPC: H02J50/12 ,  H03K17/0412 ,  H03K17/691

Abstract: An electromagnetic resonance coupler includes a first transmission line on a top surface of a first dielectric layer, and a second transmission line on a top surface of a second dielectric layer. The first transmission line includes first and second resonance lines and first and second input-output lines. The second transmission line includes third and fourth resonance lines and third and fourth input-output lines. Third and fourth ground parts are provided separated from each other on the top surface of the second dielectric layer or the top surface of the first dielectric layer. The first resonance line and the third ground part are connected via a third connector, and the fourth resonance line and the fourth ground part are connected via a fourth connector.

公开(公告)号：US10297538B2

公开(公告)日：2019-05-21

申请号：US15497189

申请日：2017-04-25

Applicant: Panasonic Corporation

Inventor： Osamu Tabata ,  Shuichi Nagai ,  Songbaek Choe

IPC: H01L23/495 ,  H01F38/14 ,  H01L23/522 ,  H01L25/00 ,  H01P1/201 ,  H01P5/02 ,  H04B5/00 ,  H01L23/49 ,  H01P1/203 ,  H01L21/56 ,  H01P7/08 ,  H01L23/48

Abstract: A signal transmission apparatus includes: a first lead frame; a second lead frame spaced from the first lead frame; a primary semiconductor chip electrically connected to the first lead frame; a secondary semiconductor chip electrically connected to the second lead frame; and a signal isolator through which a signal is isolatedly transmitted from the primary semiconductor chip to the secondary semiconductor chip, the signal isolator having a first main surface that is bonded to both the first lead frame and the second lead frame.

公开(公告)号：US09324913B2

公开(公告)日：2016-04-26

申请号：US14293441

申请日：2014-06-02

Applicant: Panasonic Corporation

Inventor： Songbaek Choe ,  Shunji Yoshida ,  Toshiya Yokogawa

IPC: H01L33/32 ,  C30B25/04 ,  C30B29/40 ,  C30B29/36 ,  H01L21/02 ,  H01L33/06 ,  C30B25/18 ,  C30B29/68 ,  H01L33/00 ,  H01L33/16 ,  H01L33/02 ,  H01S5/343

CPC classification number: H01L33/32 ,  C30B25/04 ,  C30B25/183 ,  C30B25/186 ,  C30B29/403 ,  C30B29/406 ,  C30B29/68 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02642 ,  H01L21/0265 ,  H01L33/007 ,  H01L33/06 ,  H01L33/16 ,  H01S5/34333 ,  H01S2304/12

Abstract: A nitride semiconductor structure includes: a plurality of crystal growth seed regions formed of a nitride semiconductor, of which the principal surface is an m-plane and which extends to a range that defines an angle of not less than 0 degrees and not more than 10 degrees with respect to an a-axis; and a laterally grown region formed of a nitride semiconductor which has extended in a c-axis direction from each of the plurality of crystal growth seed regions. An S width that is the spacing between adjacent ones of the plurality of crystal growth seed regions is at least 20 μm.

Abstract translation: 氮化物半导体结构包括：由氮化物半导体形成的多个晶体生长种子区域，其主表面是m面并且延伸到限定不小于0度且不大于10°的角度的范围 相对于a轴的角度; 以及由在多个晶体生长种子区域中的每一个沿c轴方向延伸的氮化物半导体形成的横向生长区域。 作为多个晶体生长种子区域的相邻间隔的间隔的S宽度为20μm以上。

公开(公告)号：US08928004B2

公开(公告)日：2015-01-06

申请号：US14085523

申请日：2013-11-20

Applicant: Panasonic Corporation

Inventor： Songbaek Choe ,  Toshiya Yokogawa ,  Akira Inoue ,  Atsushi Yamada

IPC: H01L29/15 ,  H01L31/036 ,  H01L21/20 ,  H01L21/36 ,  H01L33/18 ,  C30B25/04 ,  C30B25/18 ,  H01L33/16 ,  H01L21/02 ,  H01L33/00 ,  H01L33/20 ,  C30B29/40 ,  H01L33/58 ,  H01L33/32 ,  H01L33/12

CPC classification number: H01L33/18 ,  C30B25/04 ,  C30B25/18 ,  C30B29/403 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02609 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02642 ,  H01L21/0265 ,  H01L21/20 ,  H01L33/007 ,  H01L33/12 ,  H01L33/16 ,  H01L33/20 ,  H01L33/32 ,  H01L33/58 ,  H01L2224/14 ,  H01L2224/16225

Abstract: A structure for growth of a nitride semiconductor layer which is disclosed in this application includes: a sapphire substrate of which growing plane is an m-plane; and a plurality of ridge-shaped nitride semiconductor layers provided on the growing plane of the sapphire substrate, wherein a bottom surface of a recessed portion provided between respective ones of the plurality of ridge-shaped nitride semiconductor layers is the m-plane of the sapphire substrate, the growing plane of the plurality of ridge-shaped nitride semiconductor layers is an m-plane, and an absolute value of an angle between an extending direction of the plurality of ridge-shaped nitride semiconductor layers and a c-axis of the sapphire substrate is not less than 0° and not more than 35°.

Abstract translation: 在本申请中公开的用于生长氮化物半导体层的结构包括：生长平面为m面的蓝宝石衬底; 以及设置在蓝宝石衬底的生长平面上的多个脊状氮化物半导体层，其中设置在所述多个脊状氮化物半导体层中的各个之间的凹部的底面是蓝宝石的m面 多个脊状氮化物半导体层的生长面是m面，多个脊状氮化物半导体层的延伸方向与蓝宝石的c轴之间的角度的绝对值 基板不小于0°且不大于35°。