Optoelectronic semiconductor chip fitted with a carrier
    1.
    发明授权
    Optoelectronic semiconductor chip fitted with a carrier 失效
    配有载体的光电半导体芯片

    公开(公告)号:US08450847B2

    公开(公告)日:2013-05-28

    申请号:US13126096

    申请日:2009-11-02

    摘要: A method for producing an optoelectronic device includes providing a carrier, applying at least one first metal layer on the carrier, providing at least one optical component, applying at least one second metal layer on the at least one optical component, and mechanically connecting the carrier to the at least one optical component by the at least one first and the at least one second metal layer, wherein the connecting includes friction welding or is friction welding.

    摘要翻译: 一种制造光电子器件的方法包括提供载体,在载体上施加至少一个第一金属层,提供至少一个光学部件,在至少一个光学部件上施加至少一个第二金属层,以及机械连接载体 通过所述至少一个第一和所述至少一个第二金属层到所述至少一个光学部件,其中所述连接包括摩擦焊接或者是摩擦焊接。

    METHOD FOR PRODUCING AN OPTOELECTRONIC DEVICE AND OPTOELECTRONIC DEVICE
    4.
    发明申请
    METHOD FOR PRODUCING AN OPTOELECTRONIC DEVICE AND OPTOELECTRONIC DEVICE 失效
    制造光电器件和光电器件的方法

    公开(公告)号:US20110285017A1

    公开(公告)日:2011-11-24

    申请号:US13126096

    申请日:2009-11-02

    IPC分类号: H01L23/498 H01L21/50

    摘要: A method for producing an optoelectronic device includes providing a carrier, applying at least one first metal layer on the carrier, providing at least one optical component, applying at least one second metal layer on the at least one optical component, and mechanically connecting the carrier to the at least one optical component by the at least one first and the at least one second metal layer, wherein the connecting includes friction welding or is friction welding.

    摘要翻译: 一种制造光电子器件的方法包括提供载体,在载体上施加至少一个第一金属层,提供至少一个光学部件,在至少一个光学部件上施加至少一个第二金属层,以及机械连接载体 通过所述至少一个第一和所述至少一个第二金属层到所述至少一个光学部件,其中所述连接包括摩擦焊接或者是摩擦焊接。

    Method for Manufacturing at Least One Optoelectronic Semiconductor Device
    5.
    发明申请
    Method for Manufacturing at Least One Optoelectronic Semiconductor Device 有权
    最少一个光电半导体器件的制造方法

    公开(公告)号:US20140034983A1

    公开(公告)日:2014-02-06

    申请号:US13982225

    申请日:2011-12-21

    IPC分类号: H01L33/60 H01L33/50

    摘要: A method for manufacturing at least one optoelectronic semiconductor device includes providing a substrate and applying a number of optoelectronic semiconductor chips, which are arranged spaced apart from one another in a lateral direction, on an upper face of the substrate. At least one reflective coating is applied to the exposed areas of the substrate and the lateral surfaces of the optoelectronic semiconductor chips. Openings are introduced into the reflective coating, which completely penetrate the reflective coating. Electrically conductive material is arranged on the reflective coating and at least on some parts of the openings. Radiation penetration surfaces of the optoelectronic semiconductor chips are free of the reflective coating and the reflective coating does not laterally extend beyond the optoelectronic semiconductor chips.

    摘要翻译: 一种用于制造至少一个光电子半导体器件的方法包括:在衬底的上表面上提供衬底和施加多个在横向彼此间隔开的光电子半导体芯片。 至少一个反射涂层施加到基板的暴露区域和光电子半导体芯片的侧表面。 开口被引入到完全穿透反射涂层的反射涂层中。 导电材料布置在反射涂层上并且至少在开口的某些部分上。 光电子半导体芯片的辐射穿透表面没有反射涂层,反射涂层不横向延伸超过光电子半导体芯片。

    Luminescence Conversion LED
    9.
    发明申请
    Luminescence Conversion LED 有权
    发光转换LED

    公开(公告)号:US20110143627A1

    公开(公告)日:2011-06-16

    申请号:US13033370

    申请日:2011-02-23

    IPC分类号: H01J9/22

    摘要: A luminescence conversion LED having a radiation emitting chip that is connected to electrical connections and is surrounded by a housing that comprises at least a basic body and a cap, the chip being seated on the basic body, in particular in a cutout of the basic body, and the primary radiation of the chip being converted at least partially into longer wave radiation by a conversion element, wherein the cap is formed by a vitreous body, the conversion means being contained in the vitreous body, the refractive index of the vitreous body being higher than 1.6, preferably at least n=1.7.

    摘要翻译: 一种发光转换LED,其具有连接到电连接的辐射发射芯片,并且被包括至少包括基体和盖的壳体包围,所述芯片位于基体上,特别是在基体的切口中 并且所述芯片的主要辐射通过转换元件至少部分地转换成更长的波长辐射,其中所述盖由玻璃体形成,所述转换装置包含在所述玻璃体中,所述玻璃体的折射率为 高于1.6,优选至少n = 1.7。

    Illumination Device for Backlighting a Display, and a Display Comprising such an Illumination Device
    10.
    发明申请
    Illumination Device for Backlighting a Display, and a Display Comprising such an Illumination Device 审中-公开
    用于背光照明显示器的照明装置和包括这种照明装置的显示器

    公开(公告)号:US20110141716A1

    公开(公告)日:2011-06-16

    申请号:US12865850

    申请日:2009-01-16

    IPC分类号: G09F13/04

    摘要: An illumination device (1) for backlighting a display is disclosed. The illumination device comprises: at least one semiconductor body (3), suitable for generating electromagnetic radiation of a first wavelength range, a first wavelength conversion substance (30), which is disposed downstream of the radiation-emitting front side (6) of the semiconductor body (3) in the emission direction (8) thereof and is suitable for converting radiation of the first wavelength range into radiation of a second wavelength range, which is different from the first wavelength range, and a second wavelength conversion substance (31), which is disposed downstream of the radiation-emitting front side (6) of the semiconductor body (3) in the emission direction (8) thereof and is suitable for converting radiation of the first wavelength range into radiation of a third wavelength range, which is different from the first and second wavelength ranges. A display comprising such an illumination device (1) is furthermore described.

    摘要翻译: 公开了一种用于背光显示器的照明装置(1)。 所述照明装置包括:适于产生第一波长范围的电磁辐射的至少一个半导体本体(3),设置在所述第一波长范围的辐射发射正面(6)的下游的第一波长转换物质(30) 半导体体(3)的发射方向(8),适于将第一波长范围的辐射转换成与第一波长范围不同的第二波长范围的辐射,以及第二波长转换物质(31) ,其设置在半导体本体(3)的发射方向(8)的辐射发射正面(6)的下游,并且适于将第一波长范围的辐射转换成第三波长范围的辐射,其中 与第一和第二波长范围不同。 此外还描述包括这种照明装置(1)的显示器。