公开(公告)号：US06225221B1

公开(公告)日：2001-05-01

申请号：US09501966

申请日：2000-02-10

申请人： Paul Kwok Keung Ho ,  Mei Sheng Zhou ,  Subhash Gupta ,  Chockalingam Ramasamy

发明人： Paul Kwok Keung Ho ,  Mei Sheng Zhou ,  Subhash Gupta ,  Chockalingam Ramasamy

IPC分类号： H01L2144

CPC分类号： H01L21/76843 ,  H01L21/76874 ,  H01L21/76876 ,  H01L2221/1089

摘要： A new method of depositing a copper seed layer in the manufacture of an integrated circuit device has been achieved. The copper seed layer is thin and conformal and well-suited for subsequent electroless plating of copper. A dielectric layer, which may comprise a stack of dielectric material, is provided overlying a semiconductor substrate. The dielectric layer patterned to form vias and trenches for planned dual damascene interconnects. A barrier layer comprising tantalum, titanium, or tungsten is deposited overlying the dielectric layer to line the vias and trenches. A copper seed layer is deposited overlying the barrier layer by the reaction of CuF2 vapor with the barrier layer, and the integrated circuit is completed.

摘要翻译： 已经实现了在制造集成电路器件中沉积铜种子层的新方法。 铜种子层薄且保形，非常适合随后的铜化学镀。 提供覆盖在半导体衬底上的介电层，其可以包括电介质材料的叠层。 图案化的电介质层形成用于计划的双镶嵌互连的通孔和沟槽。 包含钽，钛或钨的阻挡层沉积在电介质层上，以对通孔和沟槽进行排列。 通过CuF2蒸汽与阻挡层的反应沉积覆盖阻挡层的铜籽晶层，并且集成电路完成。

公开(公告)号：US06368958B2

公开(公告)日：2002-04-09

申请号：US09876598

申请日：2001-06-08

申请人： Paul Kwok Keung Ho ,  Subhash Gupta ,  Mei Sheng Zhou ,  Simon Chooi

发明人： Paul Kwok Keung Ho ,  Subhash Gupta ,  Mei Sheng Zhou ,  Simon Chooi

IPC分类号： H01L214763

CPC分类号： H01L21/76843 ,  C23C18/1608 ,  C25D7/123 ,  H01L21/288 ,  H01L21/76873 ,  H01L21/76874 ,  H01L21/76877

摘要： A new method of depositing a copper layer, using disproportionation of Cu(I) ions from a solution stabilized by a polar organic solvent, for single and dual damascene interconnects in the manufacture of an integrated circuit device has been achieved. A dielectric layer, which may comprise a stack of dielectric material, is provided overlying a semiconductor substrate. The dielectric layer is patterned to form vias and trenches for planned dual damascene interconnects. A barrier layer is deposited overlying the dielectric layer to line the vias and trenches. A simple Cu(I) ion solution, stabilized by a polar organic solvent, is coated overlying said barrier layer. Water is added to the stabilized simple Cu(I) ion solution to cause disproportionation of the simple Cu(I) ion from the Cu(I) ion solution. A copper layer is deposited overlying the barrier layer. The copper layer may comprise a thin seed layer for use in subsequent electroplating or electroless plating of copper or may comprise a thick copper layer to fill the vias and trenches. The integrated circuit is completed.

摘要翻译： 已经实现了在制造集成电路器件中使用Cu（I）离子从由极性有机溶剂稳定的溶液中进行歧化的单层和双镶嵌互连的沉积铜层的新方法。 提供覆盖在半导体衬底上的介电层，其可以包括电介质材料的叠层。 图案化电介质层以形成用于计划的双镶嵌互连的通孔和沟槽。 沉积覆盖在介电层上的阻挡层以对通孔和沟槽进行排列。 将由极性有机溶剂稳定的简单的Cu（I）离子溶液涂覆在所述阻挡层上。 向稳定化的简单的Cu（I）离子溶液中加入水以引起Cu（I）离子溶液中简单的Cu（I）离子的歧化。 沉积在屏障层上的铜层。 铜层可以包括用于铜的后续电镀或无电镀的薄种子层，或者可以包括用于填充通孔和沟槽的厚铜层。 集成电路完成。

公开(公告)号：US06683002B1

公开(公告)日：2004-01-27

申请号：US09636580

申请日：2000-08-10

申请人： Simon Chooi ,  Yakub Aliyu ,  Mei Sheng Zhou ,  John Leonard Sudijono ,  Subhash Gupta ,  Sudipto Ranendra Roy ,  Paul Kwok Keung Ho ,  Yi Xu

发明人： Simon Chooi ,  Yakub Aliyu ,  Mei Sheng Zhou ,  John Leonard Sudijono ,  Subhash Gupta ,  Sudipto Ranendra Roy ,  Paul Kwok Keung Ho ,  Yi Xu

IPC分类号： H01L2144

CPC分类号： H01L21/76844 ,  H01L21/28556 ,  H01L21/31111 ,  H01L21/314 ,  H01L21/76807

摘要： Method and product for forming a dual damascene interconnect structure, wherein depositing a copper sulfide interface layer as sidewalls to the opening deters migration or diffusing of copper ions into the dielectric material.

公开(公告)号：US06261954B1

公开(公告)日：2001-07-17

申请号：US09501968

申请日：2000-02-10

申请人： Paul Kwok Keung Ho ,  Subhash Gupta ,  Mei Sheng Zhou ,  Simon Chooi

发明人： Paul Kwok Keung Ho ,  Subhash Gupta ,  Mei Sheng Zhou ,  Simon Chooi

IPC分类号： H01L2144

CPC分类号： H01L21/76843 ,  C23C18/1608 ,  C25D7/123 ,  H01L21/288 ,  H01L21/76873 ,  H01L21/76874 ,  H01L21/76877

摘要： A new method of depositing a copper layer, using disproportionation of Cu(I) ions from a solution stabilized by a polar organic solvent, for single and dual damascene interconnects in the manufacture of an integrated circuit device has been achieved. A dielectric layer, which may comprise a stack of dielectric material, is provided overlying a semiconductor substrate. The dielectric layer is patterned to form vias and trenches for planned dual damascene interconnects. A barrier layer is deposited overlying the dielectric layer to line the vias and trenches. A simple Cu(I) ion solution, stabilized by a polar organic solvent, is coated overlying said barrier layer. Water is added to the stabilized simple Cu(I) ion solution to cause disproportionation of the simple Cu(I) ion from the Cu(I) ion solution. A copper layer is deposited overlying the barrier layer. The copper layer may comprise a thin seed layer for use in subsequent electroplating or electroless plating of copper or may comprise a thick copper layer to fill the vias and trenches. The integrated circuit is completed.

摘要翻译： 已经实现了在制造集成电路器件中使用Cu（I）离子从由极性有机溶剂稳定的溶液中进行歧化的单层和双镶嵌互连的沉积铜层的新方法。 提供覆盖在半导体衬底上的介电层，其可以包括电介质材料的叠层。 图案化电介质层以形成用于计划的双镶嵌互连的通孔和沟槽。 沉积覆盖在介电层上的阻挡层以对通孔和沟槽进行排列。 将由极性有机溶剂稳定的简单的Cu（I）离子溶液涂覆在所述阻挡层上。 向稳定化的简单的Cu（I）离子溶液中加入水以引起Cu（I）离子溶液中简单的Cu（I）离子的歧化。 沉积在屏障层上的铜层。 铜层可以包括用于铜的后续电镀或无电镀的薄种子层，或者可以包括用于填充通孔和沟槽的厚铜层。 集成电路完成。

公开(公告)号：US06813796B2

公开(公告)日：2004-11-09

申请号：US10357137

申请日：2003-02-03

申请人： Sudipto Ranendra Roy ,  Subhash Gupta ,  Simon Chooi ,  Xu Yi ,  Yakub Aliyu ,  Mei Sheng Zhou ,  John Leonard Sudijono ,  Paul Kwok Keung Ho

发明人： Sudipto Ranendra Roy ,  Subhash Gupta ,  Simon Chooi ,  Xu Yi ,  Yakub Aliyu ,  Mei Sheng Zhou ,  John Leonard Sudijono ,  Paul Kwok Keung Ho

IPC分类号： B08B700

CPC分类号： B08B1/04 ,  B08B3/04

摘要： A new apparatus is provided that can be applied to clean outer edges of semiconductor substrates. Under the first embodiment of the invention, a brush is mounted on the surface of the substrate around the periphery of the substrate, chemicals are fed to the surface that is being cleaned by means of a hollow core on which the cleaning brush is mounted. The surface that is being cleaned rotates at a relatively high speed thereby causing the chemicals that are deposited on this surface (by the brush) to remain in the edge of the surface. Under the second embodiment of the invention, a porous roller is mounted between a chemical reservoir and the surface that is being cleaned, the surface that is being cleaned rotates at a relatively high speed. The chemicals that are deposited by the interfacing porous roller onto the surface that is being cleaned therefore remain at the edge of this surface thereby causing optimum cleaning action of the edge of the surface. After contaminants have been removed in this manner from the surface, the surface can be further cleaned by applying DI water.

摘要翻译： 提供了可用于清洁半导体衬底的外边缘的新设备。 在本发明的第一实施例中，刷子安装在基板周围的基板的表面上，化学品通过其上安装有清洁刷的中空芯被供给到被清洁的表面。 待清洁的表面以相对高的速度旋转，从而使沉积在该表面（由刷子）上的化学物质残留在表面的边缘。 在本发明的第二实施例中，多孔辊安装在化学容器和待清洁的表面之间，待清洁的表面以相对较高的速度旋转。 因此，由界面多孔辊沉积在待清洗的表面上的化学物质保留在该表面的边缘，从而引起表面边缘的最佳清洁作用。 污染物以这种方式从表面除去后，可以通过加入去离子水进一步清洁表面。

公开(公告)号：US06720204B2

公开(公告)日：2004-04-13

申请号：US10120836

申请日：2002-04-11

申请人： John Leonard Sudijono ,  Yakub Aliyu ,  Mei Sheng Zhou ,  Simon Chooi ,  Subhash Gupta ,  Sudipto Ranendra Roy ,  Paul Kwok Keung Ho ,  Yi Xu

发明人： John Leonard Sudijono ,  Yakub Aliyu ,  Mei Sheng Zhou ,  Simon Chooi ,  Subhash Gupta ,  Sudipto Ranendra Roy ,  Paul Kwok Keung Ho ,  Yi Xu

IPC分类号： H01L2144

CPC分类号： H01L24/05 ,  C23G5/00 ,  H01L21/02046 ,  H01L21/32136 ,  H01L23/4824 ,  H01L24/03 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/85 ,  H01L2224/04042 ,  H01L2224/05001 ,  H01L2224/05073 ,  H01L2224/05118 ,  H01L2224/05124 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05556 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/4813 ,  H01L2224/4846 ,  H01L2224/48463 ,  H01L2224/4847 ,  H01L2224/48624 ,  H01L2224/48644 ,  H01L2224/48647 ,  H01L2224/48724 ,  H01L2224/48747 ,  H01L2224/48824 ,  H01L2224/48844 ,  H01L2224/48847 ,  H01L2224/49111 ,  H01L2224/85013 ,  H01L2224/85201 ,  H01L2224/85203 ,  H01L2224/85205 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01327 ,  H01L2924/05042 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2224/48744 ,  H01L2924/00015

摘要： A method of bonding a wire to a metal bonding pad, comprising the following steps. A semiconductor die structure having an exposed metal bonding pad within a chamber is provided. The bonding pad has an upper surface. A hydrogen-plasma is produced within the chamber from a plasma source. The metal bonding pad is pre-cleaned and passivated with the hydrogen-plasma to remove any metal oxide formed on the metal bonding pad upper surface. A wire is then bonded to the passivated metal bonding pad.

摘要翻译： 一种将金属丝焊接到金属焊盘上的方法，包括以下步骤。 提供一种在室内具有暴露的金属接合焊盘的半导体管芯结构。 接合垫具有上表面。 在等离子体源室内产生氢等离子体。 用氢 - 等离子体对金属接合垫进行预清洁和钝化以去除在金属焊盘上表面上形成的任何金属氧化物。 然后将线接合到钝化金属接合焊盘。

公开(公告)号：US06692579B2

公开(公告)日：2004-02-17

申请号：US09764244

申请日：2001-01-19

申请人： Sudipto Ranendra Roy ,  Yi Xu ,  Simon Chooi ,  Yakub Aliyu ,  Mei Sheng Zhou ,  John Leonard Sudijono ,  Paul Kwok Keung Ho ,  Subhash Gupta

发明人： Sudipto Ranendra Roy ,  Yi Xu ,  Simon Chooi ,  Yakub Aliyu ,  Mei Sheng Zhou ,  John Leonard Sudijono ,  Paul Kwok Keung Ho ,  Subhash Gupta

IPC分类号： B08B300

CPC分类号： H01L21/02057 ,  B08B3/00 ,  C11D7/24 ,  C11D7/5027 ,  C11D11/0047 ,  H01L21/02063 ,  H01L21/6704

摘要： A method for cleaning a semiconductor structure using vapor phase condensation with a thermally vaporized cleaning agent, a hydrocarbon vaporized by pressure variation, or a combination of the two. In the thermally vaporized cleaning agent process, a semiconductor structure is lowered into a vapor blanket in a thermal gradient cleaning chamber at atmospheric pressure formed by heating a liquid cleaning agent below the vapor blanket and cooling the liquid cleaning agent above the vapor blanket causing it to condense and return to the bottom of the thermal gradient cleaning chamber. The semiconductor structure is then raised above the vapor blanket and the cleaning agent condenses on all of the surfaces of the semiconductor structure removing contaminants and is returned to the bottom of the chamber by gravity. In the pressurized hydrocarbon process, a semiconductor structure is placed into a variable pressure cleaning chamber, having a piston which changes the pressure by reducing or increasing the volume of the chamber. The semiconductor structure first exposed to the hydrocarbon in vapor phase, then the piston is lowered to condense the hydrocarbon. A semiconductor structure can be cleaned by either or both of these processes by repetitive vaporization/condensation cycles.

摘要翻译： 一种使用与气相清洗剂进行气相冷凝的半导体结构，通过压力变化蒸发的烃或两者的组合来清洗半导体结构的方法。 在热蒸发清洗剂方法中，半导体结构在大气压力的热梯度清洗室内被降低成蒸气层，所述热梯度清洗室通过将蒸气层下方的液体清洗剂加热而形成，并将该液体清洁剂冷却至蒸气层以上 冷凝并返回到热梯度清洗室的底部。 然后将半导体结构升高到蒸气层上方，并且清洁剂在半导体结构的所有表面上冷凝除去杂质，并通过重力返回到室的底部。 在加压烃工艺中，将半导体结构放置在可变压力清洁室中，其具有通过减小或增加室的体积来改变压力的活塞。 半导体结构首先暴露于气相中的烃，然后降低活塞以使烃冷凝。 半导体结构可以通过这些过程中的任一个或两者通过重复的蒸发/冷凝循环进行清洁。

公开(公告)号：US06429117B1

公开(公告)日：2002-08-06

申请号：US09619018

申请日：2000-07-19

申请人： John Sudijono ,  Yakub Aliyu ,  Mei Sheng Zhou ,  Simon Chooi ,  Subhash Gupta ,  Sudipto Ranendra Roy ,  Paul Kwok Keung Ho ,  Yi Xu

发明人： John Sudijono ,  Yakub Aliyu ,  Mei Sheng Zhou ,  Simon Chooi ,  Subhash Gupta ,  Sudipto Ranendra Roy ,  Paul Kwok Keung Ho ,  Yi Xu

IPC分类号： H01L214763

CPC分类号： H01L21/76831 ,  H01L21/3105 ,  H01L21/31633 ,  H01L21/31695 ,  H01L21/76807 ,  H01L21/76814 ,  H01L21/76826 ,  Y10S438/958

摘要： A method of preventing metal penetration and diffusion from metal structures formed over a semiconductor structure, comprising the following steps. A semiconductor structure including a patterned dielectric layer is provided. The patterned dielectric layer includes an opening and an upper surface. The dielectric layer surface is then passivated to form a passivation layer. A metal plug is formed within the dielectric layer opening. The passivation layer prevents penetration and diffusion of metal out from the metal plug into the semiconductor structure and the patterned dielectric layer.

摘要翻译： 一种防止在半导体结构上形成的金属结构的金属渗透和扩散的方法，包括以下步骤。 提供包括图案化介电层的半导体结构。 图案化电介质层包括开口和上表面。 然后将介电层表面钝化以形成钝化层。 在电介质层开口内形成金属塞。 钝化层防止金属从金属插塞渗入并扩散到半导体结构和图案化的介电层中。

公开(公告)号：US06261955B1

公开(公告)日：2001-07-17

申请号：US09618262

申请日：2000-07-18

申请人： Yakub Aliyu ,  Simon Chooi ,  Mei Sheng Zhou ,  John Leonard Sudijono ,  Subhash Gupta ,  Sudipto Ranendra Roy ,  Paul Kwok Keung Ho ,  Yi Xu

发明人： Yakub Aliyu ,  Simon Chooi ,  Mei Sheng Zhou ,  John Leonard Sudijono ,  Subhash Gupta ,  Sudipto Ranendra Roy ,  Paul Kwok Keung Ho ,  Yi Xu

IPC分类号： H01L2144

CPC分类号： H01L21/02046 ,  C23F1/12 ,  H01L21/02079 ,  Y10S438/906

摘要： An effective copper decontamination method in the fabrication of integrated circuits is achieved. An organic-based HFACAC decontamination compound in vapor phase is sprayed over elemental copper found on equipment or tools or as a spill wherein the compound reacts with all of the elemental copper and forms a volatile compound that can be flushed away thereby completing copper decontamination.

摘要翻译： 实现了集成电路制造中有效的铜去污方法。 蒸气相中的基于有机的HFACAC去污化合物喷洒在设备或工具上发现的元素铜上，或作为溢出物喷洒，其中化合物与所有元素铜反应并形成可被冲洗掉的挥发性化合物，从而完成铜去污。

公开(公告)号：US06540841B1

公开(公告)日：2003-04-01

申请号：US09607284

申请日：2000-06-30

申请人： Sudipto Ranendra Roy ,  Subhash Gupta ,  Simon Chooi ,  Xu Yi ,  Yakub Aliyu ,  Mei Sheng Zhou ,  John Leonard Sudijono ,  Paul Kwok Keung Ho

发明人： Sudipto Ranendra Roy ,  Subhash Gupta ,  Simon Chooi ,  Xu Yi ,  Yakub Aliyu ,  Mei Sheng Zhou ,  John Leonard Sudijono ,  Paul Kwok Keung Ho

IPC分类号： B08B700

CPC分类号： B08B1/04 ,  B08B3/04

摘要： A new method and apparatus is provided that can be applied to clean outer edges of semiconductor substrates. Under the first embodiment of the invention, a brush is mounted on the surface of the substrate around the periphery of the substrate, chemicals are fed to the surface that is being cleaned by means of a hollow core on which the cleaning brush is mounted. The surface that is being cleaned rotates at a relatively high speed thereby causing the chemicals that are deposited on this surface (by the brush) to remain in the edge of the surface. Under the second embodiment of the invention, a porous roller is mounted between a chemical reservoir and the surface that is being cleaned, the surface that is being cleaned rotates at a relatively high speed. The chemicals that are deposited by the interfacing porous roller onto the surface that is being cleaned therefore remain at the edge of this surface thereby causing optimum cleaning action of the edge of the surface. After contaminants have been removed in this manner from the surface, the surface can be further cleaned by applying DI water.

摘要翻译： 提供了可用于清洁半导体衬底的外边缘的新方法和装置。 在本发明的第一实施例中，刷子安装在基板周围的基板的表面上，化学品通过其上安装有清洁刷的中空芯被供给到待清洁的表面。 待清洁的表面以相对高的速度旋转，从而使沉积在该表面（由刷子）上的化学物质残留在表面的边缘。 在本发明的第二实施例中，多孔辊安装在化学容器和待清洁的表面之间，待清洁的表面以相对较高的速度旋转。 因此，由界面多孔辊沉积在待清洗的表面上的化学物质保留在该表面的边缘，从而引起表面边缘的最佳清洁作用。 污染物以这种方式从表面除去后，可以通过加入去离子水进一步清洁表面。