摘要:
A device is described for aligning a first object provided with a first alignment mark (P) with respect to a second object provided with a second alignment mark (M), which marks have a periodical structure and are imaged onto each other. By selecting beam portions from the radiation from the first alignment mark (P) with the aid of an order diaphragm (55'), which beam portions are deflected through larger angles, the sensitivity of the device to errors can be decreased. Such a device may be used to great advantage in a lithographic apparatus.
摘要:
A method and apparatus for repetitively imaging a mask pattern (C) on a substrate (W) are described. Various parameters of the apparatus and the projection lens system (PL) can be measured accurately and reliably and measuring devices of the apparatus can be calibrated by measuring a latent image of a mark by means of a scanning microscope (LID) forming a diffraction-limited radiation spot (Sp) on the photoresist layer on the substrate (W), in which layer the latent image is formed by means of a projection beam (PB).
摘要:
A radiation-source unit is described which produces a radiation beam (30) with two components (9, 10) which are polarized perpendicularly relative to one another and which have different frequencies. The unit comprises a radiation source, a beam splitter (4), an acousto-optical modulation system (13, 18) for generating the frequency difference, and a beam combiner (25). Since the beam splitter and the beam combiner are transmission elements and their connecting line extends through the center of the modulation system the unit is compact and no alignment problems occur. Moreover, the frequency difference is adjustable over a wide range.
摘要:
A differential interferometer system for measuring the mutual positions and movements of a first object (WH) and a second object (MH). The system comprises a first interferometer unit (1, 2, 3, 4) having a first measuring reflector (RW) and a second interferometer unit (5, 6, 7, 8) having a second measuring reflector (RM). Since a measuring beam (b.sub.m) passes through both the first and the second interferometer unit and is reflected by both the first and the second measuring reflector, and since the measuring beam and the reference beam (b.sub.r) traverse the same path at least between the two interferometer units, accurate measurements can be preformed very rapidly. The interferometer system may be used to great advantage in a step-and-scan-lithographic projection apparatus.
摘要:
A method and apparatus for forming a pattern on a substrate (w), either or not via a mask pattern (c), are described. The radiation dose can be measured accurately and reliably by measuring a latent image of a new, asymmetrical test mark (TM) by means of an optical alignment device present in the apparatus or associated therewith, this latent image being formed by means of production radiation (PB) in the radiation-sensitive layer on the substrate.
摘要:
A method and apparatus for repetitively imaging a mask pattern (C) on a substrate (W) are described. The focusing of the projection lens system used for imaging and various other parameters of the apparatus and the projection lens system (PL), as well as illumination doses can be measured accurately and reliably, and measuring devices of the apparatus can be calibrated, by measuring an image of a new asymmetrical test mark formed in the photoresist on the substrate (W) by means of a projection beam (PB).
摘要:
A catheter (700, 800, 1206) comprising: a shaft with distal (808, 906, 1004, 208) and proximal ends (1006),wherein the distal end comprises at least one array of capacitive micromachined ultrasound transducers (308, 402, 404, 500, 512, 600, 604, 802, 008) with an adjustable focus for controllably heating a target zone (806, 1014, 1210); and a connector (1012) at the proximal end for supplying the at least one array of capacitive micromachined ultrasound transducers with electrical power and for controlling the adjustable focus.
摘要:
A device includes first and second material facing towards each other as to form at least one focusing microstructure with a focal point located outside of the first material.
摘要:
A method of forming a pattern in at least one device layer in or on a substrate comprises: coating the device layer with a first photoresist layer; exposing the first photoresist using a first mask; developing the first photoresist layer to form a first pattern on the substrate; coating the substrate with a protection layer; treating the protection layer to cause a change therein where it is in contact with the first photoresist, to render the changed protection layer substantially immune to a subsequent exposure and/or developing step; coating the substrate with a second photoresist layer; exposing the second photoresist layer using a second mask; and developing the second photoresist layer to form a second pattern on the substrate without significantly affecting the first pattern in the first photoresist layer, wherein the first and second patterns together define interspersed features having a spatial frequency greater than that of the features defined in each of the first and second patterns separately. The process has particular utility in defining source, drain and fin features of finFET devices with a smaller feature size than otherwise achievable with the prevailing lithography tools.
摘要:
Apparatus for optical inspection of an object, comprising: an optical imaging system (5) for generating an actual image of the real object, a calculation unit (12) for calculating an estimated image of an object of desired shape in respect of a known aberration coefficient of the optical imaging system, an image analysis unit (13) for detecting differences between the actual image and the image calculated by the calculation unit (12).