公开(公告)号：US20050272273A1

公开(公告)日：2005-12-08

申请号：US11136662

申请日：2005-05-24

申请人： Quanyuan Shang ,  Robert Robertson ,  Kam Law ,  James Gardner

发明人： Quanyuan Shang ,  Robert Robertson ,  Kam Law ,  James Gardner

IPC分类号： C23C14/50 ,  C23C16/00 ,  C23C16/458 ,  H01L21/00 ,  H01L21/26 ,  H01L21/31 ,  H01L21/324 ,  H01L21/42 ,  H01L21/469 ,  H01L21/477 ,  H01L21/683 ,  H02N13/00

CPC分类号： C23C16/4583 ,  C23C14/50 ,  C23C16/458 ,  C23C16/4586 ,  H01L21/67069 ,  H01L21/6831 ,  H02N13/00 ,  Y10T279/23

摘要： An apparatus and method for holding a substrate on a support layer in a processing chamber. The method includes the steps of positioning the substrate a predetermined distance from the support layer, introducing a plasma in the processing chamber, lowering the substrate to a point where the substrate engages the support layer, and maintaining the plasma for a predetermined time. The apparatus is directed to a susceptor system for a processing chamber in which a substrate is electrostatically held essentially flat. The apparatus includes a substrate support and a support layer composed of a dielectric material disposed on the substrate support. At least one lift pin is used for supporting the substrate relative to the support layer. Means are provided for moving each lift pin relative to the support layer. Means are also provided for producing a plasma within the processing chamber.

公开(公告)号：US07439191B2

公开(公告)日：2008-10-21

申请号：US10117692

申请日：2002-04-05

申请人： Kam Law ,  Quanyuan Shang ,  William Reid Harshbarger ,  Dan Maydan

发明人： Kam Law ,  Quanyuan Shang ,  William Reid Harshbarger ,  Dan Maydan

IPC分类号： H01L21/31

CPC分类号： H01L27/127 ,  C23C16/24 ,  C23C16/45525 ,  C23C16/45542 ,  H01L27/12 ,  H01L27/1214 ,  H01L29/66757 ,  H01L29/66765

摘要： A method of silicon layer deposition using a cyclical deposition process. The cyclical deposition process comprises alternately adsorbing a silicon-containing precursor and a reducing gas on a substrate structure. Thin film transistors, such as for example a bottom-gate transistor or a top-gate transistor, including one or more silicon layers may, be formed using such cyclical deposition techniques.

摘要翻译： 使用循环沉积工艺的硅层沉积方法。 循环沉积工艺包括在衬底结构上交替地吸附含硅前体和还原气体。 可以使用这种循环沉积技术形成薄膜晶体管，例如包括一个或多个硅层的底栅晶体管或顶栅晶体管。

公开(公告)号：US07732010B2

公开(公告)日：2010-06-08

申请号：US11406136

申请日：2006-04-18

申请人： Soo Young Choi ,  Beom Soo Park ,  Quanyuan Shang ,  Robert I. Greene ,  John M. White ,  Dong-Kil Yim ,  Chung-Hee Park ,  Kam Law

发明人： Soo Young Choi ,  Beom Soo Park ,  Quanyuan Shang ,  Robert I. Greene ,  John M. White ,  Dong-Kil Yim ,  Chung-Hee Park ,  Kam Law

IPC分类号： C23C16/00

CPC分类号： H01J37/32082 ,  C23C16/4581 ,  C25D11/04 ,  C25D11/16 ,  C25D11/18

摘要： A method for supporting a glass substrate comprising providing a substrate support having an aluminum body, a substrate contact area formed on the surface of the substrate support, wherein the process of forming the substrate contact area comprises forming an anodization layer on a surface region of the aluminum body, the coating having a thickness of between about 0.3 mils and about 2.16 mils, wherein the surface region substantially corresponds to the substrate contact area, and preparing the anodization layer disposed over the surface region to a surface roughness between about 88 micro-inches and about 230 micro-inches, followed by anodizing the substrate surface to said thickness, positioning the substrate support adjacent a substrate processing region in a substrate processing chamber, wherein the substrate contact area is adjacent the substrate processing region, positioning the glass substrate on the substrate contact area.

摘要翻译： 一种用于支撑玻璃基板的方法，包括提供具有铝体的基板支撑件，形成在所述基板支撑件的表面上的基板接触区域，其中形成所述基板接触区域的工艺包括在所述基板支撑件的表面区域上形成阳极氧化层 铝体，所述涂层具有在约0.3密耳和约2.16密耳之间的厚度，其中所述表面区域基本上对应于所述基底接触面积，以及将所述阳极氧化层设置在所述表面区域上方的表面粗糙度在约88微英寸 约230微英寸，然后将基板表面阳极化至所述厚度，将基板支撑件邻近基板处理区域定位在基板处理室中，其中基板接触区域与基板处理区域相邻，将玻璃基板定位在基板处理区域上 基板接触面积。

公开(公告)号：US20060185795A1

公开(公告)日：2006-08-24

申请号：US11406136

申请日：2006-04-18

申请人： Soo Choi ,  Beom Park ,  Quanyuan Shang ,  Robert Greene ,  John White ,  Dong-Kil Yim ,  Chung-Hee Park ,  Kam Law

发明人： Soo Choi ,  Beom Park ,  Quanyuan Shang ,  Robert Greene ,  John White ,  Dong-Kil Yim ,  Chung-Hee Park ,  Kam Law

IPC分类号： H01L21/306 ,  C23C16/00 ,  H05H1/24

CPC分类号： H01J37/32082 ,  C23C16/4581 ,  C25D11/04 ,  C25D11/16 ,  C25D11/18

摘要： A substrate support and method for fabricating the same are provided. In one embodiment of the invention, a substrate support includes an electrically conductive body having a substrate support surface that is covered by an electrically insulative coating. At least a portion of the coating centered on the substrate support surface has a surface finish of between about 80 to about 200 micro-inches. In another embodiment, a substrate support includes an anodized aluminum body having a surface finish on the portion of the body adapted to support a substrate thereon of between about 80 to about 200 micro-inches.

摘要翻译： 提供了一种基板支撑件及其制造方法。 在本发明的一个实施例中，衬底支撑件包括具有由电绝缘涂层覆盖的衬底支撑表面的导电体。 以基板支撑表面为中心的涂层的至少一部分具有介于约80至约200微英寸之间的表面光洁度。 在另一个实施例中，衬底支撑件包括阳极化铝体，其在主体部分上具有表面光洁度，其适于将基底支撑在约80至约200微英寸之间。

公开(公告)号：US5892328A

公开(公告)日：1999-04-06

申请号：US884000

申请日：1997-06-27

申请人： Quanyuan Shang ,  Kam Law ,  Dan Maydan

发明人： Quanyuan Shang ,  Kam Law ,  Dan Maydan

IPC分类号： H05H1/46 ,  H01J37/32 ,  H01L21/02 ,  H01J7/24

CPC分类号： H01J37/32192 ,  H01J37/32357

摘要： A plasma-based generator for use with a power source including a plasma tube having a hollow tube body in which a plasma is generated by the power source; a first support structure supporting a downstream end of the plasma tube; and a second support structure holding an upstream end of the plasma tube, the second support structure connected to the first support structure, the second support structure including an expansion joint which changes its length to accommodate a lengthening and a shortening of the plasma tube due to its thermal expansion and contraction when plasma processing is performed within the plasma tube.

摘要翻译： 一种用于电源的等离子体发生器，包括具有中空管体的等离子体管，其中由电源产生等离子体; 支撑等离子体管的下游端的第一支撑结构; 以及保持所述等离子体管的上游端的第二支撑结构，所述第二支撑结构连接到所述第一支撑结构，所述第二支撑结构包括膨胀接头，所述膨胀接头改变其长度以适应等离子体管的延长和缩短 其在等离子体管内进行等离子体处理时的热膨胀和收缩。

公开(公告)号：US06869838B2

公开(公告)日：2005-03-22

申请号：US10118864

申请日：2002-04-09

申请人： Kam Law ,  Quanyuan Shang ,  William Reid Harshbarger ,  Dan Maydan

发明人： Kam Law ,  Quanyuan Shang ,  William Reid Harshbarger ,  Dan Maydan

IPC分类号： H01L21/336 ,  H01L27/10

CPC分类号： H01L29/66757 ,  H01L29/66765 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of passivation layer deposition using a cyclical deposition process is described. The cyclical deposition process may comprise alternately adsorbing a silicon-containing precursor and a reactant gas on a substrate structure. Thin film transistors, such as a bottom-gate transistor or a top-gate transistor, including a silicon-containing passivation layer, may be formed using such cyclical deposition techniques.

摘要翻译： 描述了使用循环沉积工艺的钝化层沉积的方法。 循环沉积工艺可以包括在衬底结构上交替地吸附含硅前体和反应气体。 可以使用这种循环沉积技术来形成包括含硅钝化层的诸如底栅晶体管或顶栅晶体管的薄膜晶体管。

公开(公告)号：US5861197A

公开(公告)日：1999-01-19

申请号：US740012

申请日：1996-10-23

申请人： Kam Law ,  Robert Robertson ,  Guofu Jeff Feng

发明人： Kam Law ,  Robert Robertson ,  Guofu Jeff Feng

IPC分类号： C03C17/245 ,  C23C16/40 ,  C23C16/509 ,  H01L21/28 ,  H01L21/316 ,  B05D3/06

CPC分类号： C23C16/5096 ,  C03C17/245 ,  C23C16/402 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/28008 ,  H01L21/28158 ,  H01L21/31608 ,  C03C2217/213 ,  C03C2218/153 ,  Y10S148/053

摘要： A plasma enhanced chemical vapor deposition process for depositing conformal silicon oxide thin films useful to make thin film transistors which have stable electrical properties and low charge centers onto a substrate comprising flowing a precursor gas mixture of silane and nitrous oxide, the latter at a high rate, at a pressure of at least about 0.8 torr and a temperature of from about 250.degree. to 350.degree. C. The effective volume of the reaction region between the gas manifold inlet and the substrate during processing is kept small.

摘要翻译： 一种等离子体增强化学气相沉积工艺，用于沉积具有稳定电性能和低电荷中心的薄膜晶体管的共形氧化硅薄膜，该薄膜晶体管具有稳定的电性能和低电荷中心，包括使硅烷和一氧化二氮的前体气体混合物高速流动 在至少约0.8托的压力和约250℃至350℃的温度下进行。加工期间气体歧管入口和基底之间的反应区域的有效体积保持较小。

公开(公告)号：US5851602A

公开(公告)日：1998-12-22

申请号：US703582

申请日：1996-08-26

申请人： Kam Law ,  Robert Robertson ,  Jeffrey Feng

发明人： Kam Law ,  Robert Robertson ,  Jeffrey Feng

IPC分类号： C03C17/245 ,  C23C16/40 ,  C23C16/509 ,  H01L21/28 ,  H01L21/316 ,  B05D3/06

CPC分类号： C23C16/5096 ,  C03C17/245 ,  C23C16/402 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/28008 ,  H01L21/28158 ,  H01L21/31608 ,  C03C2217/213 ,  C03C2218/153 ,  Y10S148/053

摘要： A plasma enhanced chemical vapor deposition process for depositing conformal silicon oxide thin films useful to make thin film transistors which have stable electrical properties and low charge centers onto a substrate comprising flowing a precursor gas mixture of silane and nitrous oxide, the latter at a high rate, at a pressure of at least about 0.8 torr and a temperature of from about 250.degree. to 350.degree. C. The effective volume of the reaction region between the gas manifold inlet and the substrate during processing is kept small.

摘要翻译： 一种等离子体增强化学气相沉积工艺，用于沉积具有稳定电性能和低电荷中心的薄膜晶体管的共形氧化硅薄膜，该薄膜晶体管具有稳定的电性能和低电荷中心，包括使硅烷和一氧化二氮的前体气体混合物高速流动 在至少约0.8托的压力和约250℃至350℃的温度下进行。加工期间气体歧管入口和基底之间的反应区域的有效体积保持较小。

公开(公告)号：US5589233A

公开(公告)日：1996-12-31

申请号：US466915

申请日：1995-06-06

申请人： Kam Law ,  Robert Robertson ,  Guofu J. Feng

发明人： Kam Law ,  Robert Robertson ,  Guofu J. Feng

IPC分类号： C23C16/44 ,  H01L21/205 ,  H01L21/336 ,  H01L29/786 ,  C23C16/00 ,  B05D3/06

CPC分类号： H01L29/66765 ,  C23C16/4404 ,  H01L21/02422 ,  H01L21/0245 ,  H01L21/02488 ,  H01L21/02502 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  Y10S438/905

摘要： A method of depositing layers of intrinsic amorphous silicon and doped amorphous silicon sequentially on a substrate in the same CVD chamber without incurring a dopant contamination problem. The method can be carried out by first depositing an additional layer of a dielectric insulating material prior to the deposition process of the intrinsic amorphous silicon layer. The additional layer of insulating material deposited on the substrate should have a thickness such that residual insulating material coated on the chamber walls is sufficient to cover the residual dopants on the chamber walls left by the deposition process of the previous substrate. This provides a clean environment for the next deposition process of an intrinsic amorphous silicon layer on a substrate in the same CVD chamber.

摘要翻译： 本征非晶硅和掺杂的非晶硅的顺序沉积在相同CVD室中的衬底上的方法，而不会引起掺杂剂污染问题。 该方法可以通过在本征非晶硅层的沉积工艺之前首先沉积介电绝缘材料的附加层来进行。 沉积在基板上的附加绝缘材料层应该具有使得涂覆在室壁上的残留绝缘材料足以覆盖由先前基板的沉积工艺留下的室壁上的残留掺杂剂的厚度。 这为在同一CVD室中的衬底上的本征非晶硅层的下一个沉积工艺提供了清洁的环境。

公开(公告)号：US5902650A

公开(公告)日：1999-05-11

申请号：US500728

申请日：1995-07-11

申请人： Jeff Feng ,  Robert Robertson ,  Kam Law

发明人： Jeff Feng ,  Robert Robertson ,  Kam Law

IPC分类号： G02F1/136 ,  C01B33/02 ,  C23C16/24 ,  C23C16/34 ,  C23C16/50 ,  G02F1/1368 ,  H01L21/205 ,  B05D3/06

CPC分类号： C23C16/24

摘要： A method of depositing an amorphous silicon based film that has controlled resistivity in between that of an intrinsic amorphous silicon and an n.sup.+ doped amorphous silicon on a substrate for an electronic device by a chemical vapor deposition process or a plasma-enhanced chemical vapor deposition process.

摘要翻译： 一种通过化学气相沉积法或等离子体增强化学气相沉积工艺沉积在电子器件用基板上的本征非晶硅与n +掺杂非晶硅之间具有受控电阻率的非晶硅基膜的方法。