公开(公告)号：US10038071B2

公开(公告)日：2018-07-31

申请号：US15410304

申请日：2017-01-19

申请人： ROHM CO., LTD. ,  LAPIS Semiconductor Co., Ltd.

发明人： Akihiro Hikasa ,  Kazusuke Kato

IPC分类号： H01L33/00 ,  H01L29/45 ,  H01L29/16 ,  H01L29/861 ,  H01L29/739 ,  H01L29/78 ,  H01L29/732 ,  H01L21/04 ,  H01L21/3205 ,  H01L21/02 ,  H01L21/3213

CPC分类号： H01L29/45 ,  H01L21/02244 ,  H01L21/0485 ,  H01L21/32051 ,  H01L21/32134 ,  H01L23/53223 ,  H01L29/0615 ,  H01L29/0619 ,  H01L29/0638 ,  H01L29/16 ,  H01L29/1608 ,  H01L29/401 ,  H01L29/404 ,  H01L29/41708 ,  H01L29/41725 ,  H01L29/42304 ,  H01L29/456 ,  H01L29/66068 ,  H01L29/66128 ,  H01L29/66712 ,  H01L29/66734 ,  H01L29/732 ,  H01L29/7395 ,  H01L29/7397 ,  H01L29/7802 ,  H01L29/7811 ,  H01L29/7813 ,  H01L29/861 ,  H01L29/8611

摘要： A semiconductor device according to the present invention includes: a semiconductor layer including a first conductivity type semiconductor region and a second conductivity type semiconductor region joined to the first conductivity type semiconductor region; and a surface electrode connected to the second conductivity type region on one surface of the semiconductor layer, including a first Al-based electrode, a second Al-based electrode, an Al-based oxide film interposed between the first Al-based electrode and the second Al-based electrode, and a plated layer on the second Al-based electrode.

公开(公告)号：US10121871B2

公开(公告)日：2018-11-06

申请号：US15386872

申请日：2016-12-21

申请人： ROHM CO., LTD. ,  LAPIS Semiconductor Co., Ltd.

发明人： Akihiro Hikasa ,  Kazusuke Kato

IPC分类号： H01L29/45 ,  H01L21/288 ,  H01L29/739 ,  H01L29/78 ,  H01L29/861 ,  H01L29/417 ,  H01L29/66 ,  H01L29/732 ,  H01L29/06 ,  H01L29/40 ,  H01L29/16

摘要： A semiconductor device according to the present invention includes: a semiconductor layer including a first conductivity type semiconductor region and a second conductivity type semiconductor region joined to the first conductivity type semiconductor region; and a surface electrode connected to the second conductivity type region on one surface of the semiconductor layer, including a first Al-based electrode, a second Al-based electrode, a barrier metal interposed between the first Al-based electrode and the second Al-based electrode, and a plated layer on the second Al-based electrode.

公开(公告)号：US10411105B2

公开(公告)日：2019-09-10

申请号：US16019190

申请日：2018-06-26

申请人： ROHM CO., LTD. ,  LAPIS Semiconductor Co., Ltd.

发明人： Akihiro Hikasa ,  Kazusuke Kato

IPC分类号： H01L33/00 ,  H01L29/45 ,  H01L21/02 ,  H01L21/04 ,  H01L21/3205 ,  H01L21/3213 ,  H01L29/16 ,  H01L29/732 ,  H01L29/739 ,  H01L29/78 ,  H01L29/861 ,  H01L29/40 ,  H01L29/417 ,  H01L29/423 ,  H01L29/66 ,  H01L29/06 ,  H01L23/532

摘要： A semiconductor device according to the present invention includes: a semiconductor layer including a first conductivity type semiconductor region and a second conductivity type semiconductor region joined to the first conductivity type semiconductor region; and a surface electrode connected to the second conductivity type region on one surface of the semiconductor layer, including a first Al-based electrode, a second Al-based electrode, an Al-based oxide film interposed between the first Al-based electrode and the second Al-based electrode, and a plated layer on the second Al-based electrode.

公开(公告)号：US10062774B2

公开(公告)日：2018-08-28

申请号：US15378016

申请日：2016-12-13

申请人： ROHM CO., LTD.

发明人： Akihiro Hikasa

IPC分类号： H01L29/732 ,  H01L29/739 ,  H01L29/417 ,  H01L29/40 ,  H01L29/06 ,  H01L29/66

CPC分类号： H01L29/7397 ,  H01L29/0619 ,  H01L29/0646 ,  H01L29/0649 ,  H01L29/1095 ,  H01L29/404 ,  H01L29/407 ,  H01L29/41708 ,  H01L29/41766 ,  H01L29/6634 ,  H01L29/66348 ,  H01L29/7395

摘要： A semiconductor device includes a plurality of gate trenches formed in a semiconductor layer; a gate electrode filled via a gate insulating film in the plurality of gate trenches; an n+-type emitter region, a p-type base region, and an n−-type drift region disposed laterally to each gate trench; a p+-type collector region on a back surface side of the semiconductor layer; a plurality of emitter trenches formed between the gate trenches adjacent to each other; a buried electrode filled via an insulating film in the plurality of emitter trenches; and a p-type floating region formed between the plurality of emitter trenches. The p-type floating region is formed deeper than the p-type base region, and includes an overlap portion. The n+-type emitter region selectively has a pullout portion pulled out in a transverse direction along the front surface of the semiconductor layer from a side surface of the gate trench.

公开(公告)号：US09236461B2

公开(公告)日：2016-01-12

申请号：US14470889

申请日：2014-08-27

申请人： ROHM CO., LTD.

发明人： Akihiro Hikasa

IPC分类号： H01L29/66 ,  H01L29/739 ,  H01L29/08 ,  H01L29/423 ,  H01L29/417 ,  H01L29/06 ,  H01L29/10

CPC分类号： H01L27/0716 ,  H01L29/0619 ,  H01L29/0692 ,  H01L29/0696 ,  H01L29/0804 ,  H01L29/1095 ,  H01L29/404 ,  H01L29/407 ,  H01L29/41708 ,  H01L29/4236 ,  H01L29/7397 ,  H01L29/7841

摘要： A semiconductor device includes: an FET structure that is formed next to a looped trench on a semiconductor substrate and that has an n+ emitter region and an n− drain region facing each other in the depth direction of the looped trench across a p-type base region; a p-type floating region formed on the side of the looped trench opposite to the FET structure; and an emitter connecting part that is electrically connected to the n+ emitter region and a trench gate provided in the same trench, the emitter connecting part and the trench gate being insulated from each other by the looped trench. The trench gate faces the FET structure, and the emitter connecting part faces the p-type floating region, across an insulating film.

摘要翻译： 半导体器件包括：FET结构，其形成在半导体衬底上的环状沟槽旁边，并且具有在环状沟槽的深度方向上相对于p型基极的n +发射极区域和n-漏极区域 地区; 形成在与FET结构相对的环状沟槽侧的p型浮动区域; 以及与n +发射极区域电连接的发射极连接部分和设置在同一沟槽中的沟槽栅极，发射极连接部分和沟槽栅极通过环状沟槽彼此绝缘。 沟槽栅极面对FET结构，发射极连接部分面向p型浮动区域，穿过绝缘膜。

公开(公告)号：US11942531B2

公开(公告)日：2024-03-26

申请号：US17459367

申请日：2021-08-27

申请人： ROHM CO., LTD.

发明人： Akihiro Hikasa

IPC分类号： H01L29/66 ,  H01L23/00 ,  H01L23/40 ,  H01L23/482 ,  H01L23/495 ,  H01L25/16 ,  H01L27/082 ,  H01L29/04 ,  H01L29/06 ,  H01L29/16 ,  H01L29/40 ,  H01L29/417 ,  H01L29/423 ,  H01L29/739 ,  H01L29/861

CPC分类号： H01L29/66333 ,  H01L23/4824 ,  H01L23/49562 ,  H01L24/06 ,  H01L24/49 ,  H01L25/16 ,  H01L27/0823 ,  H01L29/04 ,  H01L29/0619 ,  H01L29/0696 ,  H01L29/16 ,  H01L29/417 ,  H01L29/41708 ,  H01L29/42376 ,  H01L29/739 ,  H01L29/7397 ,  H01L29/861 ,  H01L23/4006 ,  H01L24/05 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L27/082 ,  H01L27/0825 ,  H01L29/407 ,  H01L2224/05552 ,  H01L2224/05554 ,  H01L2224/0603 ,  H01L2224/291 ,  H01L2224/32245 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/48101 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/48472 ,  H01L2224/4903 ,  H01L2224/49111 ,  H01L2224/49113 ,  H01L2224/49175 ,  H01L2224/73265 ,  H01L2924/1203 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2224/48091 ,  H01L2924/00014 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2224/48472 ,  H01L2224/48091 ,  H01L2924/00 ,  H01L2224/73265 ,  H01L2224/32245 ,  H01L2224/48247 ,  H01L2924/00012 ,  H01L2224/291 ,  H01L2924/014 ,  H01L2924/13091 ,  H01L2924/00 ,  H01L2224/48472 ,  H01L2224/48247 ,  H01L2924/00

摘要： A semiconductor device of the present invention includes a semiconductor layer including a main IGBT cell and a sense IGBT cell connected in parallel to each other, a first resistance portion having a first resistance value formed using a gate wiring portion of the sense IGBT cell and a second resistance portion having a second resistance value higher than the first resistance value, a gate wiring electrically connected through mutually different channels to the first resistance portion and the second resistance portion, a first diode provided between the gate wiring and the first resistance portion, a second diode provided between the gate wiring and the second resistance portion in a manner oriented reversely to the first diode, an emitter electrode disposed on the semiconductor layer, electrically connected to an emitter of the main IGBT cell, and a sense emitter electrode disposed on the semiconductor layer, electrically connected to an emitter of the sense IGBT cell.

公开(公告)号：US10608087B2

公开(公告)日：2020-03-31

申请号：US15473915

申请日：2017-03-30

申请人： ROHM CO., LTD.

发明人： Akihiro Hikasa

IPC分类号： H01L29/36 ,  H01L29/66 ,  H01L21/321 ,  H01L29/739 ,  H01L21/324 ,  H01L21/265 ,  H01L29/06 ,  H01L29/861 ,  H01L21/32 ,  H01L29/78 ,  H01L29/40

摘要： A semiconductor device includes a semiconductor layer, having an active region, in which a functional element is formed, a first impurity region of a first conductivity type, formed at a surface layer portion of the semiconductor layer, a second impurity region of a second conductivity type, formed at a surface layer portion of the first impurity region and defining the active region, and a well region of the second conductivity type, formed along a periphery of the second impurity region at the surface layer portion of the first impurity region and having an inner side edge portion positioned at the second impurity region side, and an outer side edge portion positioned at an opposite side with respect to the second impurity region and having a second conductivity type impurity concentration lower than a second conductivity type impurity concentration of the inner side edge portion.

公开(公告)号：US09685544B2

公开(公告)日：2017-06-20

申请号：US14686338

申请日：2015-04-14

申请人： ROHM CO., LTD.

发明人： Akihiro Hikasa

IPC分类号： H01L29/06 ,  H01L29/423 ,  H01L29/739 ,  H01L29/40 ,  H01L29/66 ,  H01L29/08 ,  H01L29/16 ,  H01L29/417 ,  H01L29/10 ,  H01L29/45 ,  H01L29/49

CPC分类号： H01L29/7397 ,  H01L29/0619 ,  H01L29/0696 ,  H01L29/0804 ,  H01L29/0821 ,  H01L29/1004 ,  H01L29/16 ,  H01L29/402 ,  H01L29/41708 ,  H01L29/42304 ,  H01L29/4236 ,  H01L29/42376 ,  H01L29/456 ,  H01L29/4916 ,  H01L29/4958 ,  H01L29/4966 ,  H01L29/6634 ,  H01L29/66348 ,  H01L29/7396

摘要： A semiconductor device according to the present invention includes a first conductive-type semiconductor layer, a second conductive-type base region that is arranged in the front surface portion of the semiconductor layer, a plurality of trenches that extend from a front surface of the semiconductor layer beyond a bottom portion of the base region with an active region being defined therebetween, a plurality of first conductive-type emitter regions that are arranged in the active region, each connecting the trenches adjacent to each other, a gate electrode that is embedded in the trench, an embedding insulating film that is embedded in the trench on the gate electrode and that has an upper surface in the same height position as the front surface of the semiconductor layer or in a height position lower than the front surface and an emitter electrode that covers the active region and the embedding insulating film and that is electrically connected to the base region and the emitter region.

公开(公告)号：US09543421B2

公开(公告)日：2017-01-10

申请号：US13969697

申请日：2013-08-19

申请人： ROHM CO., LTD.

发明人： Akihiro Hikasa

IPC分类号： H01L29/732 ,  H01L29/739 ,  H01L29/66 ,  H01L29/40 ,  H01L29/417 ,  H01L29/06 ,  H01L29/10

CPC分类号： H01L29/7397 ,  H01L29/0619 ,  H01L29/0646 ,  H01L29/0649 ,  H01L29/1095 ,  H01L29/404 ,  H01L29/407 ,  H01L29/41708 ,  H01L29/41766 ,  H01L29/6634 ,  H01L29/66348 ,  H01L29/7395

摘要： A semiconductor device includes a semiconductor layer, a plurality of gate trenches, a gate electrode in the plurality of gate trenches, an n+-type emitter region, a p-type base region, and an n−-type drift region disposed, lateral to each gate trench, a p+-type collector region, a plurality of emitter trenches formed between the plurality of gate trenches, a buried electrode in the plurality of emitter trenches, and electrically connected with the n+-type emitter region, and a p-type floating region formed between the plurality of emitter trenches.

摘要翻译： 半导体器件包括半导体层，多个栅极沟槽，多个栅极沟槽中的栅极电极，n +型发射极区域，p型基极区域和n型漂移区域， 每个栅极沟槽，p +型集电极区域，形成在多个栅极沟槽之间的多个发射极沟槽，多个发射极沟槽中的埋入电极，并与n +型发射极区域电连接，p型 浮置区域形成在多个发射器沟槽之间。

公开(公告)号：US12080793B2

公开(公告)日：2024-09-03

申请号：US17670947

申请日：2022-02-14

申请人： ROHM CO., LTD.

发明人： Akihiro Hikasa

IPC分类号： H01L29/78 ,  H01L29/10 ,  H01L29/12 ,  H01L29/417 ,  H01L29/423 ,  H01L29/49 ,  H01L29/66 ,  H01L29/739

CPC分类号： H01L29/7813 ,  H01L29/1095 ,  H01L29/12 ,  H01L29/417 ,  H01L29/423 ,  H01L29/49 ,  H01L29/66734 ,  H01L29/739

摘要： A semiconductor device includes a semiconductor layer having a main surface in which a trench is formed, a first-conductivity-type body region formed along a sidewall of the trench in a surface layer portion of the main surface of the semiconductor layer, a second-conductivity-type impurity region formed along the sidewall of the trench in a surface layer portion of the body region, a gate insulating layer formed on an inner wall of the trench, a gate electrode that is embedded in the trench and that faces the body region and the impurity region with the gate insulating layer placed between the gate electrode and the body region and between the gate electrode and the impurity region, a contact electrode that passes through the sidewall of the trench from inside the trench and is drawn out to the surface layer portion of the main surface of the semiconductor layer and is electrically connected to the body region and to the impurity region, and an embedded insulating layer that is interposed between the gate electrode and the contact electrode in the trench and that insulates the gate electrode and the contact electrode.