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    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
    3.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20240395723A1

    公开(公告)日：2024-11-28

    申请号：US18797548

    申请日：2024-08-08

    Applicant: ROHM CO., LTD.

    Inventor： Isamu NISHIMURA

    IPC: H01L23/538 ,  H01L21/48 ,  H01L23/00 ,  H01L23/31 ,  H01L23/36 ,  H01L23/498 ,  H01L25/065

    Abstract: A semiconductor device includes a substrate, a first semiconductor element, and a wiring. The substrate includes an obverse surface and a reverse surface facing away from each other in a first direction. The first semiconductor element includes a first electrode and a second electrode. The wiring includes a portion located between the substrate and each of the first electrode and the second electrode. The first electrode and the second electrode are electrically bonded to the wiring. The substrate is formed with a recess recessed from the obverse surface, and the wiring is accommodated in the recess. The wiring includes an exposed surface that is flush with the obverse surface. A roughness of the exposed surface is smaller than a roughness of the reverse surface.

    NITRIDE SEMICONDUCTOR DEVICE
    4.
    发明公开
    NITRIDE SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：US20240021717A1

    公开(公告)日：2024-01-18

    申请号：US18220277

    申请日：2023-07-11

    Applicant: ROHM CO., LTD.

    Inventor： Isamu NISHIMURA

    IPC: H01L29/778 ,  H01L29/20 ,  H01L29/40 ,  H01L29/10 ,  H01L29/66

    CPC classification number: H01L29/7786 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/1066 ,  H01L29/66462

    Abstract: A nitride semiconductor device includes an electron transit layer, formed above a substrate, and an electron supply layer formed on the electron transit layer and having a larger band gap than the electron transit layer. A gate layer is formed on the electron supply layer and contains an acceptor impurity. A gate electrode is formed on the gate layer. A source electrode and a drain electrode are located at opposite sides of the gate layer and contact the electron supply layer. The gate electrode has a greater length than the gate layer in a first direction in which the source electrode, the gate layer, and the drain electrode are arranged. The gate electrode contacts an entire upper surface of the gate layer and extends from the gate layer toward at least one of the source electrode and the drain electrode.

    SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
    6.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：US20200266172A1

    公开(公告)日：2020-08-20

    申请号：US16703037

    申请日：2019-12-04

    Applicant: ROHM CO., LTD.

    Inventor： Isamu NISHIMURA

    IPC: H01L23/00 ,  H01L23/14 ,  H01L23/29 ,  H01L21/768 ,  H01L21/02

    Abstract: A semiconductor device, includes: a semiconductor element including an element main surface and an element back surface facing opposite sides in a thickness direction; a wiring part electrically connected to the semiconductor element; an electrode pad electrically connected to the wiring part; a sealing resin configured to cover a part of the semiconductor element; and a first metal layer configured to make contact with the element back surface and exposed from the sealing resin, wherein the semiconductor element overlaps the first metal layer when viewed in the thickness direction.

    SEMICONDUCTOR DEVICE
    7.
    发明申请
    SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：US20180331008A1

    公开(公告)日：2018-11-15

    申请号：US15970525

    申请日：2018-05-03

    Applicant: ROHM CO., LTD.

    Inventor： Isamu NISHIMURA

    IPC: H01L23/34 ,  H01L23/10 ,  H01L23/49 ,  H01L23/485 ,  H01L23/28

    CPC classification number: H01L23/34 ,  H01L23/10 ,  H01L23/28 ,  H01L23/3121 ,  H01L23/4855 ,  H01L23/49 ,  H01L33/58 ,  H01L33/62 ,  H01L33/64 ,  H01L2224/16

    Abstract: The present disclosure provides a semiconductor device for high efficiently releasing heat generated from a semiconductor element to the outside. The semiconductor device of the present disclosure includes a substrate, made of an intrinsic semiconductor material, having a substrate main surface facing toward a thickness direction z, and configured to have a recess recessed from the substrate main surface; an internal wiring layer, disposed on the substrate main surface and the recess; a columnar conductor, protruding from the internal wiring layer disposed on the substrate main surface toward a direction in which the substrate main surface faces; a semiconductor element, having an element main surface facing the same direction as the substrate main surface, and electrically connected to the internal wiring layer; and a sealing resin, filled into the recess and covering a portion of each of the columnar conductor and the semiconductor element; wherein the semiconductor element has a portion overlapping the recess when viewed in the thickness direction of the substrate, and the semiconductor device is configured to have a heat dissipating layer being in contact with the element main surface and exposed to the outside.

    ELECTRONIC PART AND SEMICONDUCTOR DEVICE
    10.
    发明申请
    ELECTRONIC PART AND SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20220270988A1

    公开(公告)日：2022-08-25

    申请号：US17679539

    申请日：2022-02-24

    Applicant: ROHM Co., LTD.

    Inventor： Isamu NISHIMURA

    IPC: H01L23/64 ,  H01L49/02

    Abstract: Provided is an electronic part that includes a first substrate including a first base and a first coil, the first coil being electrically insulated from the first base, a second substrate including a second base and a second coil, the second coil being electrically insulated from the second base, and a support member that supports the first substrate and the second substrate. The first substrate is arranged between the second substrate and the support member in a thickness direction of the support member and overlaps the second substrate as viewed in the thickness direction, the first base is positioned between the first coil and the second coil in the thickness direction, and the first coil and the second coil are magnetically coupled.

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