Abstract:
A semiconductor device is provided. The semiconductor device includes a clock gate line supplying a clock signal, an inverted clock gate line disposed in parallel to the clock gate line and supplying an inverted clock signal, a first latch circuit performing a first latch operation based on the clock signal and the inverted clock signal and a second latch circuit disposed on a side of the first latch circuit in a first direction, receiving an output of the first latch circuit, and operating based on the clock signal and the inverted clock, wherein the clock gate line and the inverted clock gate line extend in the first direction and are shared by the first and second latch circuits.
Abstract:
Provided are semiconductor circuits. A semiconductor circuit includes: a first circuit configured to propagate a value of a first node to a second node based on a voltage level of a clock signal; a second circuit configured to propagate a value of the second node to a third node based on the voltage level of the clock signal; and a third circuit configured to determine a value of the third node based on a voltage level of the second node and the voltage level of the clock signal, wherein the first circuit comprises a first transistor gated to a voltage level of the first node, a second transistor connected in series with the first transistor and gated to the voltage level of the third node, and a third transistor connected in parallel with the first and second transistors and gated to a voltage level of the clock signal to provide the value of the first node to the second node.
Abstract:
An apparatus for manufacturing a semiconductor device is provided. The apparatus for manufacturing a semiconductor device may include a mass flow controller configured to control a flow of a process gas supplied to a process chamber, the mass flow controller configured to adjust an outflow rate of the process gas exiting the mass flow controller in response to a correction signal, the correction signal generated based on a difference between an inflow rate of the process gas flowing into the mass flow controller and a reference flow rate, a sensor configured to measure a chamber pressure inside the process chamber, an exhaust valve configured to adjust an exhaust speed of an exhaust gas exhausted from the process chamber; and a monitoring apparatus configured to detect a defect of the mass flow controller based on the correction signal, the chamber pressure, and the exhaust speed of the exhaust valve.
Abstract:
A flip-flop includes an input switching circuit configured to output an intermediate signal based on an input signal and at least one of a phase of a clock signal or a phase of an inverted clock signal, the phase of the inverted clock signal being opposite to the phase of the clock signal, and block application of a driving voltage to at least one circuit element of the input switching circuit in response to receiving a reset signal representing a reset operation of the flip-flop, and a latch circuit configured to generate an output signal based on the intermediate signal according to the at least one of the phase of the clock signal or the phase of the inverted clock signal.
Abstract:
A package board includes a stack structure that includes a circuit layer and a fiber layer. The fiber layer includes at least one first fiber that extends in a first direction and is a non-woven fiber. Also, a prepreg includes a first fiber that is a non-woven fiber; a plurality of second fibers that are spaced apart from the first fiber and are woven fibers; and an insulating layer that fills gaps between the first fiber and the plurality of second fibers.
Abstract:
Provided are semiconductor circuits. A semiconductor circuit includes: a first circuit configured to propagate a value of a first node to a second node based on a voltage level of a clock signal; a second circuit configured to propagate a value of the second node to a third node based on the voltage level of the clock signal; and a third circuit configured to determine a value of the third node based on a voltage level of the second node and the voltage level of the clock signal, wherein the first circuit comprises a first transistor gated to a voltage level of the first node, a second transistor connected in series with the first transistor and gated to the voltage level of the third node, and a third transistor connected in parallel with the first and second transistors and gated to a voltage level of the clock signal to provide the value of the first node to the second node.
Abstract:
Provided are a package substrate and a method of fabricating a semiconductor package. The package substrate includes: a base substrate having a plurality of packaging unit regions arranged along rows and columns on one surface thereof; and a sink portion penetrating at least a portion of the base substrate from the one surface, in which the packaging unit regions may be disposed adjacent to a first side of the one surface and the sink portion may be disposed adjacent to a second side of the one surface.
Abstract:
A flip-flop includes an input switching circuit configured to output an intermediate signal based on an input signal and at least one of a phase of a clock signal or a phase of an inverted clock signal, the phase of the inverted clock signal being opposite to the phase of the clock signal, and block application of a driving voltage to at least one circuit element of the input switching circuit in response to receiving a reset signal representing a reset operation of the flip-flop, and a latch circuit configured to generate an output signal based on the intermediate signal according to the at least one of the phase of the clock signal or the phase of the inverted clock signal.
Abstract:
Provided are a printed circuit board (PCB) capable of blocking introduction of impurities during a molding process so as to reduce damage on a semiconductor package, a method of manufacturing the PCB, and a method of manufacturing a semiconductor package by using the PCB. An embodiment includes an apparatus comprising: a substrate body comprising an active area and a dummy area on an outer portion of the active area, the substrate body extending lengthwise in a first direction; a plurality of semiconductor units mounted on the active area; and a barrier formed on the dummy area, wherein the barrier extends in the first direction.