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公开(公告)号：US06319837B1
公开(公告)日：2001-11-20
申请号：US09606833
申请日：2000-06-29
IPC分类号： H01L2100
CPC分类号： H01L21/7684
摘要： The present invention includes a method for reducing dishing of an integrated circuit interconnect, comprising the steps of providing excess interconnect material above a damascene feature in a substrate and planarizing the substrate and interconnect material to obtain an interconnect in the substrate.
摘要翻译： 本发明包括一种用于减少集成电路互连的凹陷的方法，包括以下步骤：在衬底上的镶嵌特征之上提供过量的互连材料，并平坦化衬底和互连材料以获得衬底中的互连。
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公开(公告)号：US5807760A
公开(公告)日：1998-09-15
申请号：US706932
申请日：1996-09-03
IPC分类号： C23C14/34 , C23C14/50 , C23C14/54 , C23C16/12 , C23C16/46 , C23C16/50 , H01L21/28 , H01L21/285 , H01L21/3205 , H01L21/768 , H01L21/283
CPC分类号： H01L21/2855 , C23C14/50 , C23C14/541 , H01L21/76877
摘要： A method of depositing aluminum or other metals so that vias are more completely filled is disclosed. The wafer or substrate is preheated to a temperature of approximately 200.degree. C. Then the wafer is placed in an ambient of approximately 350.degree. C. while metal deposition commences. The resulting metal layer has a gradually increasing grain size and exhibits improved via filling. Also disclosed is a method and apparatus (involving cooling of support structures) for deposition of an anti-reflective coating to prevent rainbowing or spiking of the coating into the underlying metal.
摘要翻译： 公开了一种沉积铝或其它金属使得通孔更完全填充的方法。 将晶片或衬底预热至约200℃的温度。然后将晶片置于约350℃的环境中，同时开始金属沉积。 所得到的金属层具有逐渐增加的晶粒尺寸并表现出改进的通孔填充。 还公开了一种方法和装置（包括冷却支撑结构），用于沉积防反射涂层，以防止涂层向底层金属中起彩虹或尖峰。
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公开(公告)号：US06790757B1
公开(公告)日：2004-09-14
申请号：US09467253
申请日：1999-12-20
IPC分类号： H01L2144
CPC分类号： H01L24/85 , H01L24/03 , H01L24/05 , H01L24/45 , H01L24/48 , H01L24/78 , H01L2224/04042 , H01L2224/05681 , H01L2224/45124 , H01L2224/45144 , H01L2224/45565 , H01L2224/456 , H01L2224/45624 , H01L2224/48091 , H01L2224/48465 , H01L2224/48472 , H01L2224/48599 , H01L2224/48699 , H01L2224/78301 , H01L2224/85201 , H01L2224/85205 , H01L2224/85375 , H01L2224/85948 , H01L2924/00011 , H01L2924/01005 , H01L2924/01013 , H01L2924/01029 , H01L2924/01066 , H01L2924/01073 , H01L2924/01075 , H01L2924/01079 , H01L2924/01327 , H01L2924/014 , H01L2924/14 , H01L2924/19041 , H01L2924/19043 , H01L2924/00014 , H01L2924/01004 , H01L2924/00 , H01L2224/48781 , H01L2224/48681 , H01L2224/45147 , H01L2924/00015 , H01L2924/013 , H01L2924/01006
摘要： The present invention uses wire bonding technology to bond interconnect materials that oxidize easily by using a wire with stable oxidation qualities. A passivation layer is formed on the semiconductor substrate to encapsulate the bonding pad made from the interconnect material such that the wire bonds with the passivation layer itself, not with the interconnect material. The passivation layer is selected to be a material that is metallurgically stable when bonded to the interconnect material. Since the wire is stable compared with the interconnect material, i.e., it does not readily corrode, a reliable mechanical and electrical connection is provided between the semiconductor device (interconnect material) and the wire, with the passivation layer disposed therebetween.
摘要翻译： 本发明使用引线接合技术，通过使用具有稳定的氧化特性的导线，可以容易地接合易氧化的互连材料。 在半导体衬底上形成钝化层以封装由互连材料制成的接合焊盘，使得引线与钝化层本身而不是与互连材料结合。 钝化层选择为当结合到互连材料时是冶金稳定的材料。 由于线与互连材料相比是稳定的，即不易腐蚀，所以在半导体器件（互连材料）和导线之间提供可靠的机械和电连接，其中钝化层位于它们之间。
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公开(公告)号：US06472304B2
公开(公告)日：2002-10-29
申请号：US09864577
申请日：2001-05-24
IPC分类号： H01L2144
CPC分类号： H01L24/85 , H01L24/03 , H01L24/05 , H01L24/45 , H01L24/48 , H01L2224/02166 , H01L2224/04042 , H01L2224/05009 , H01L2224/05027 , H01L2224/05082 , H01L2224/05166 , H01L2224/05181 , H01L2224/05187 , H01L2224/05556 , H01L2224/05558 , H01L2224/05572 , H01L2224/05624 , H01L2224/45015 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/48453 , H01L2224/48463 , H01L2224/48624 , H01L2224/48699 , H01L2224/48724 , H01L2224/48824 , H01L2224/85201 , H01L2224/85203 , H01L2224/85205 , H01L2924/00014 , H01L2924/0002 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01019 , H01L2924/01022 , H01L2924/01023 , H01L2924/01029 , H01L2924/01043 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01075 , H01L2924/01079 , H01L2924/04941 , H01L2924/04953 , H01L2924/05042 , H01L2924/10253 , H01L2924/10329 , H01L2924/14 , H01L2924/20751 , H01L2924/20752 , H01L2924/20753 , H01L2924/20754 , H01L2924/20755 , H01L2224/78 , H01L2924/00 , H01L2224/05552 , H01L2924/00015 , H01L2924/013 , H01L2924/00013 , H01L2924/01004
摘要： The specification describes techniques for wire bonding gold wires to copper metallization in semiconductor integrated circuits. A barrier layer is formed on the copper, and an aluminum bonding pad is formed on the barrier layer. Gold wire is then thermocompression bonded to the aluminum pad.
摘要翻译： 该说明书描述了用于将金线引线接合到半导体集成电路中的铜金属化的技术。 在铜上形成阻挡层，在阻挡层上形成铝焊盘。 然后将金线热压粘合到铝垫上。
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公开(公告)号：US06455418B1
公开(公告)日：2002-09-24
申请号：US09723557
申请日：2000-11-28
IPC分类号： H01L214763
CPC分类号： H01L21/76846 , H01L21/76843 , H01L21/76877 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： The invention includes a process for copper metallization of an integrated circuit, comprising the steps of forming tantalum on a substrate, forming tantalum nitride over the tantalum, forming titanium nitride over the tantalum nitride, forming copper over the titanium nitride and integrated circuits made thereby. The invention is particularly useful in forming damascene structures with large aspect ratios.
摘要翻译： 本发明包括一种用于集成电路的铜金属化的方法，包括在衬底上形成钽的步骤，在钽上形成氮化钽，在氮化钽上形成氮化钛，在氮化钛上形成铜并在其上形成集成电路。 本发明特别可用于形成具有大纵横比的镶嵌结构。
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公开(公告)号：US6136159A
公开(公告)日：2000-10-24
申请号：US276086
申请日：1998-11-06
IPC分类号： C23C14/34 , C23C14/50 , C23C14/54 , C23C16/12 , C23C16/46 , C23C16/50 , H01L21/28 , H01L21/285 , H01L21/3205 , H01L21/768
CPC分类号： H01L21/2855 , C23C14/50 , C23C14/541 , H01L21/76877
摘要： A method of depositing aluminum or other metals so that vias are more completely filled is disclosed. The wafer or substrate is preheated to a temperature of approximately 200.degree. C. Then the wafer is placed in an ambient of approximately 350.degree. C. while metal deposition commences. The resulting metal layer has a gradually increasing grain size and exhibits improved via filling. Also disclosed is a method and apparatus (involving cooling of support structures) for deposition of an antireflective coating to prevent rainbowing or spiking of the coating into the underlying metal.
摘要翻译： 公开了一种沉积铝或其它金属使得通孔更完全填充的方法。 将晶片或衬底预热至约200℃的温度。然后将晶片置于约350℃的环境中，同时开始金属沉积。 所得到的金属层具有逐渐增加的晶粒尺寸并表现出改进的通孔填充。 还公开了一种用于沉积抗反射涂层的方法和装置（包括冷却支撑结构），以防止涂层向底层金属中起彩虹或尖峰。
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公开(公告)号：US5972179A
公开(公告)日：1999-10-26
申请号：US941556
申请日：1997-09-30
CPC分类号： C23C14/046 , C23C14/0641 , C23C16/34 , H01L21/76843 , H01L21/76856
摘要： The specification describes a composite TiN barrier layer structure formed by depositing a first TiN layer by CVD to obtain good step coverage, followed by a second TiN layer formed by PVD to obtain uniform surface morphology for subsequent deposition of an aluminum alloy contact layer. Alternatively, uniform TiN layer morphology is obtained by depositing multiple CVD TiN layers as a series of thin strata, and passivating after each deposition step to fully crystallize each stratum thereby obtaining a uniformly crystallized barrier layer.
摘要翻译： 该说明书描述了通过CVD沉积第一TiN层以获得良好的台阶覆盖形成的复合TiN阻挡层结构，随后是由PVD形成的第二TiN层，以获得均匀的表面形态，以便随后沉积铝合金接触层。 或者，通过将多个CVD TiN层作为一系列薄层沉积而获得均匀的TiN层形态，并且在每个沉积步骤之后钝化以使每个层完全结晶，从而获得均匀结晶的阻挡层。
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公开(公告)号：US5935396A
公开(公告)日：1999-08-10
申请号：US843125
申请日：1997-04-25
IPC分类号： C23C14/34 , C23C14/50 , C23C14/54 , C23C16/12 , C23C16/46 , C23C16/50 , H01L21/28 , H01L21/285 , H01L21/3205 , H01L21/768
CPC分类号： H01L21/2855 , C23C14/50 , C23C14/541 , H01L21/76877
摘要： A method of depositing aluminum or other metals so that vias are more completely filled is disclosed. The wafer or substrate is preheated to a temperature of approximately 200.degree. C. Then the wafer is placed in an ambient of approximately 350.degree. C. while metal deposition commences. The resulting metal layer has a gradually increasing grain size and exhibits improved via filling. Also disclosed is a method and apparatus (involving cooling of support structures) for deposition of an anti-reflective coating to prevent rainbowing or spiking of the coating into the underlying metal.
摘要翻译： 公开了一种沉积铝或其它金属使得通孔更完全填充的方法。 将晶片或衬底预热至约200℃的温度。然后将晶片置于约350℃的环境中，同时开始金属沉积。 所得到的金属层具有逐渐增加的晶粒尺寸并表现出改进的通孔填充。 还公开了一种方法和装置（包括冷却支撑结构），用于沉积防反射涂层，以防止涂层向底层金属中起彩虹或尖峰。
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公开(公告)号：US5798300A
公开(公告)日：1998-08-25
申请号：US857079
申请日：1997-05-15
IPC分类号： H01L21/285 , H01L21/203 , H01L21/768 , H01L21/28
CPC分类号： H01L21/76877
摘要： A method of forming electromigration resistant integrated circuit runners is disclosed. A collimated beam of particles is directed toward a substrate to form a metal nucleating layer. Then a non-collimated beam is used to form the rest of the metal layer. Then the layers are patterned to form runners.
摘要翻译： 公开了一种形成电迁移集成电路流道的方法。 准直的颗粒束指向基板以形成金属成核层。 然后使用非平行光束形成金属层的其余部分。 然后将这些层图案化以形成流道。
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10.发明授权公开(公告)号：US06365327B1
公开(公告)日：2002-04-02
申请号：US09386065
申请日：1999-08-30
IPC分类号： G03F736
CPC分类号： H01L21/76808 , H01L2924/0002 , H01L2924/00
摘要： A process for forming a dual damascene structure. The process includes forming a stack including insulating layers and a stop layer where two masks are formed above the stack. One of the masks is used to form via or contact openings in the insulating layers and the second mask is used to form grooves for interconnections in the insulating layers.
摘要翻译： 一种形成双镶嵌结构的方法。 该方法包括形成包括绝缘层的堆叠和在叠层上方形成两个掩模的停止层。 一个掩模用于在绝缘层中形成通孔或接触开口，并且第二掩模用于形成用于绝缘层中的互连的沟槽。
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