公开(公告)号：US10221991B2

公开(公告)日：2019-03-05

申请号：US15257360

申请日：2016-09-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Chi-woo Lee ,  Sang-won Kim

IPC: G01M1/38 ,  F16M11/18 ,  F16M11/08 ,  G05B15/02 ,  G09G3/20

Abstract: Disclosed is a display apparatus including: a display configured to be swiveled; a stand configured to support the display; a driver configured to swivel the display with respect to the stand; a swiveling indicator provided within a predetermined swiveling range of the display and shaped to show a swiveling indication value corresponding to a swiveled angle of the display; a sensor configured to sense the swiveling indication value of the swiveling indicator corresponding to the swiveled angle of the display; and a controller configured to determine the swiveled angle of the display based on the swiveling indication value sensed by the sensor and to provide at least one function supported by the display apparatus in accordance with the determined swiveled angle.

公开(公告)号：US09757496B2

公开(公告)日：2017-09-12

申请号：US14463884

申请日：2014-08-20

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Jae-hyun Hur ,  No-kyoung Park ,  Kyu-hyun Im ,  Sang-won Kim ,  Sung-woo Hwang ,  Jang-wook Choi

IPC: A61L27/60 ,  H01B1/22 ,  A61L27/50 ,  A61L27/48 ,  A61L27/52 ,  B82Y5/00 ,  C08J3/24 ,  C08J3/075 ,  A61L27/20 ,  A61L27/44

CPC classification number: A61L27/60 ,  A61L27/20 ,  A61L27/443 ,  A61L27/446 ,  A61L27/48 ,  A61L27/50 ,  A61L27/52 ,  B82Y5/00 ,  C08J3/075 ,  C08J3/247 ,  H01B1/22 ,  C08L5/12

Abstract: An electro-conductive hydrogel composite material that may be suitable as an artificial skin satisfies all four requirements of artificial skin, namely, flexibility, electrical conductivity, healing property, and biocompatibility. The electro-conductive hydrogel composite material includes a hydrogel composition including water and a cross-linkable polymer which reversibly forms cross-linkage by hydrogen bonding; and an electro-conductive material dispersed in the hydrogen bond-based hydrogel.

公开(公告)号：US09564631B2

公开(公告)日：2017-02-07

申请号：US14034891

申请日：2013-09-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sang-won Kim ,  Jong-jin Park ,  Jin-hwan Park ,  Hyung-wook Ha

IPC: H01M4/02 ,  H01M4/36 ,  H01M4/04 ,  D01D5/00 ,  D01D5/34 ,  D01F9/14 ,  H01M4/38 ,  H01M4/62 ,  D01F1/08 ,  D01F8/18 ,  H01M4/134 ,  H01M4/1395

CPC classification number: H01M4/366 ,  D01D5/0007 ,  D01D5/0069 ,  D01D5/34 ,  D01F1/08 ,  D01F8/18 ,  D01F9/14 ,  H01M4/0411 ,  H01M4/0471 ,  H01M4/0473 ,  H01M4/134 ,  H01M4/1395 ,  H01M4/386 ,  H01M4/387 ,  H01M4/625 ,  H01M4/626 ,  H01M2004/021 ,  H01M2004/022 ,  Y02E60/122

Abstract: A composite anode active material, an anode including the composite anode active material, a lithium battery including the anode, and a method of preparing the composite anode active material. The composite anode active material includes: a shell including a hollow carbon fiber; and a core disposed in a hollow of the hollow carbon fiber, wherein the core includes a first metal nanostructure and a conducting agent.

Abstract translation: 复合负极活性物质，包含复合负极活性物质的阳极，包含阳极的锂电池，以及制备复合阳极活性物质的方法。 复合负极活性物质包括：包含中空碳纤维的外壳; 以及设置在中空碳纤维的空心中的芯，其中所述芯包括第一金属纳米结构和导电剂。

公开(公告)号：US10337122B2

公开(公告)日：2019-07-02

申请号：US14679112

申请日：2015-04-06

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  Industry-Academic Cooperation Foundation, Yonsei University

Inventor： Jong-Jin Park ,  Jung-kyun Im ,  Sang-won Kim ,  Un-yong Jeong

IPC: D01D5/00 ,  H01B1/22 ,  D06M11/83 ,  B82Y40/00 ,  B82Y30/00 ,  D01F1/09

Abstract: A method of producing stretchable conductive nanofibers includes: providing stretchable nanofibers; providing a metal precursor solution by dissolving metal precursors in a solvent that may swell the stretchable nanofibers; bringing the stretchable nanofibers into contact with the metal precursor solution or its vapor for a sufficient time for the metal precursors to penetrate into the stretchable nanofibers; and reduce the metal precursors inside the stretchable nanofibers to metal nanoparticles.

公开(公告)号：US09425320B2

公开(公告)日：2016-08-23

申请号：US14189494

申请日：2014-02-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Chwee Iin Choong ,  Sang-won Kim ,  Jong-jin Park ,  Ji-hyun Bae ,  Jung-kyun Im ,  Sang-hun Jeon

IPC: H01L29/76 ,  H01L29/786 ,  H01L29/66 ,  H01L51/05 ,  H01L29/06

CPC classification number: H01L29/78603 ,  H01L29/0669 ,  H01L29/66742 ,  H01L51/0558

Abstract: Provided is a thin film transistor on fiber and a method of manufacturing the same. The thin film transistor includes a fiber; a first electrode, a second electrode and a gate electrode formed on fiber; a channel formed between the first and second electrodes; an encapsulant encapsulating the fiber, the first, second, and gate electrodes, and an upper surface of the channel; and a gate insulating layer formed in a portion of the inner area of the encapsulant.

Abstract translation: 提供了一种光纤上的薄膜晶体管及其制造方法。 薄膜晶体管包括光纤; 形成在纤维上的第一电极，第二电极和栅电极; 形成在第一和第二电极之间的通道; 封装光纤，第一，第二和栅电极以及通道的上表面的密封剂; 以及形成在所述密封剂的内部区域的一部分中的栅极绝缘层。

公开(公告)号：US08940557B2

公开(公告)日：2015-01-27

申请号：US13921415

申请日：2013-06-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang-won Kim ,  Jong-youn Kim ,  Eun-kyoung Choi ,  Sang-uk Han ,  Ji-seok Hong

IPC: H01L21/66 ,  H01L21/56 ,  H01L25/065 ,  H01L23/00 ,  H01L25/00

CPC classification number: H01L21/565 ,  H01L21/561 ,  H01L22/10 ,  H01L22/12 ,  H01L22/20 ,  H01L24/05 ,  H01L24/06 ,  H01L24/13 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/73 ,  H01L24/92 ,  H01L24/94 ,  H01L24/97 ,  H01L25/0652 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/05009 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05664 ,  H01L2224/06181 ,  H01L2224/13025 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/92125 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06565 ,  H01L2225/06568 ,  H01L2924/10253 ,  H01L2924/10271 ,  H01L2924/10329 ,  H01L2924/1431 ,  H01L2924/1434 ,  H01L2924/1435 ,  H01L2924/1438 ,  H01L2924/1441 ,  H01L2924/18161 ,  H01L2924/3511 ,  H01L2924/00012 ,  H01L2224/81 ,  H01L2924/00

Abstract: A method of fabricating a wafer level package includes preparing a wafer including a plurality of first semiconductor chips, mounting a plurality of second semiconductor chips on the wafer, disposing the wafer on a lower mold and disposing an upper mold so as to surround edges of a top surface of the wafer, dispensing a molding member on the wafer, and pressurizing the molding member by using a plunger so as to fabricate a wafer level package in which a top surface of each of the plurality of second semiconductor chips is exposed.

Abstract translation: 制造晶片级封装的方法包括制备包括多个第一半导体芯片的晶片，将多个第二半导体芯片安装在晶片上，将晶片设置在下模具上，并且设置上模以围绕边缘 在晶片的上表面上分配模制构件，并且通过使用柱塞对模制构件加压，以便制造其中暴露多个第二半导体芯片中的每一个的顶表面的晶片级封装。

公开(公告)号：US20130344627A1

公开(公告)日：2013-12-26

申请号：US13921415

申请日：2013-06-19

Applicant: Samsung Electronics Co., Ltd

Inventor： Sang-won Kim ,  Jong-youn Kim ,  Eun-kyoung Choi ,  Sang-uk Han ,  Ji-seok Hong

IPC: H01L21/56

CPC classification number: H01L21/565 ,  H01L21/561 ,  H01L22/10 ,  H01L22/12 ,  H01L22/20 ,  H01L24/05 ,  H01L24/06 ,  H01L24/13 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/73 ,  H01L24/92 ,  H01L24/94 ,  H01L24/97 ,  H01L25/0652 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/05009 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05664 ,  H01L2224/06181 ,  H01L2224/13025 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/92125 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06565 ,  H01L2225/06568 ,  H01L2924/10253 ,  H01L2924/10271 ,  H01L2924/10329 ,  H01L2924/1431 ,  H01L2924/1434 ,  H01L2924/1435 ,  H01L2924/1438 ,  H01L2924/1441 ,  H01L2924/18161 ,  H01L2924/3511 ,  H01L2924/00012 ,  H01L2224/81 ,  H01L2924/00

Abstract: A method of fabricating a wafer level package includes preparing a wafer including a plurality of first semiconductor chips, mounting a plurality of second semiconductor chips on the wafer, disposing the wafer on a lower mold and disposing an upper mold so as to surround edges of a top surface of the wafer, dispensing a molding member on the wafer, and pressurizing the molding member by using a plunger so as to fabricate a wafer level package in which a top surface of each of the plurality of second semiconductor chips is exposed.

Abstract translation: 制造晶片级封装的方法包括制备包括多个第一半导体芯片的晶片，将多个第二半导体芯片安装在晶片上，将晶片设置在下模具上，并且设置上模以围绕边缘 在晶片的上表面上分配模制构件，并且通过使用柱塞对模制构件加压，以便制造其中暴露多个第二半导体芯片中的每一个的顶表面的晶片级封装。