公开(公告)号：US20130154055A1

公开(公告)日：2013-06-20

申请号：US13616439

申请日：2012-09-14

Applicant: Sun Mi PARK ,  Sang Hyun OH ,  Sang Bum LEE

Inventor： Sun Mi PARK ,  Sang Hyun OH ,  Sang Bum LEE

IPC: H01L23/535 ,  H01L21/02 ,  H01L21/768 ,  H01L23/48

CPC classification number: H01L28/60 ,  H01L27/0805 ,  H01L27/10844 ,  H01L27/11573 ,  H01L27/11582 ,  H01L28/91

Abstract: A capacitor of a semiconductor device includes a capacitor structure configured to include electrode layers and dielectric layers alternately stacked, edge regions each stepwise patterned, and a central region disposed between the edge regions, sacrificial layers disposed within the respective electrode layers in the edge regions of the capacitor structure, and support plugs formed in the central region of the capacitor structure and configured to penetrate the electrode layers and the dielectric layers.

公开(公告)号：US20110297992A1

公开(公告)日：2011-12-08

申请号：US13213988

申请日：2011-08-19

Applicant: Pun Jae CHOI ,  Ki Yeol Park ,  Sang Bum LEE ,  Seon Young MYOUNG ,  Myong Soo CHO

Inventor： Pun Jae CHOI ,  Ki Yeol Park ,  Sang Bum LEE ,  Seon Young MYOUNG ,  Myong Soo CHO

IPC: H01L33/60

CPC classification number: H01L33/382 ,  H01L33/20

Abstract: There is provided a semiconductor light emitting device that minimizes reflection or absorption of emitted light, maximizes luminous efficiency with the maximum light emitting area, enables uniform current spreading with a small area electrode, and enables mass production with high reliability and high quality. A semiconductor light emitting device according to an aspect of the invention includes first and second conductivity type semiconductor layers, an active layer formed therebetween, first electrode layer, and a second electrode part electrically connecting the semiconductor layers. The second electrode part includes an electrode pad unit, an electrode extending unit, and an electrode connecting unit connecting the electrode pad unit and electrode extending unit.

Abstract translation: 提供了一种半导体发光器件，其使发射光的反射或吸收最小化，以最大发光面积最大化发光效率，能够利用小面积电极均匀地传播电流，并且能够以高可靠性和高质量进行批量生产。 根据本发明的一个方面的半导体发光器件包括第一和第二导电类型半导体层，其间形成的有源层，第一电极层和电连接半导体层的第二电极部分。 第二电极部分包括电极焊盘单元，电极延伸单元和连接电极焊盘单元和电极延伸单元的电极连接单元。

公开(公告)号：US20130107602A1

公开(公告)日：2013-05-02

申请号：US13601531

申请日：2012-08-31

Applicant: Sang Hyun OH ,  Seiichi Aritome ,  Sang Bum LEE

Inventor： Sang Hyun OH ,  Seiichi Aritome ,  Sang Bum LEE

IPC: H01L27/088 ,  H01L21/336 ,  G11C5/02

CPC classification number: H01L27/11556 ,  G11C16/0408 ,  G11C16/14 ,  H01L21/8221 ,  H01L27/11524 ,  H01L27/1157 ,  H01L27/11578 ,  H01L27/11582

Abstract: A three-dimensional (3-D) nonvolatile memory device includes a channel layer protruded from a substrate, a plurality of memory cells stacked along the channel layer, a source line coupled to the end of one side of the channel layer, a bit line coupled to the end of the other side of the channel layer, a first junction interposed between the end of one side of the channel layer and the source line and configured to have a P type impurity doped therein, and a second junction interposed between the end of the other side of the channel layer and the bit line and configured to have an N type impurity doped therein.

Abstract translation: 三维（3-D）非易失性存储器件包括从衬底突出的沟道层，沿着沟道层堆叠的多个存储单元，耦合到沟道层一侧的端部的源极线，位线 耦合到沟道层的另一侧的端部，插入在沟道层的一侧的端部和源极线之间并且被配置为在其中掺杂有P型杂质的第一结，以及插入在端部之间的第二结 的沟道层的另一侧和位线，并且被配置为在其中掺杂有N型杂质。

公开(公告)号：US20160240733A1

公开(公告)日：2016-08-18

申请号：US15042658

申请日：2016-02-12

Applicant: Tae Young PARK ,  Sang Bum LEE ,  Pun Jae CHOI ,  Sung Joon KIM ,  Jin Wook CHUNG ,  Se Jun HAN ,  Su Min HWANGBO

Inventor： Tae Young PARK ,  Sang Bum LEE ,  Pun Jae CHOI ,  Sung Joon KIM ,  Jin Wook CHUNG ,  Se Jun HAN ,  Su Min HWANGBO

IPC: H01L33/12 ,  H01L33/60 ,  H01L33/62 ,  H01L33/00 ,  H01L33/32

CPC classification number: H01L33/12 ,  H01L33/0079 ,  H01L33/40 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00012

Abstract: A semiconductor light emitting device is provided. The semiconductor light emitting device includes: a support substrate; a first layer disposed on the support substrate and applying tensile stress to the support substrate; a bonding layer disposed on the first layer; a second layer disposed on the bonding layer and applying compressive stress to the support substrate; and a light emitting structure disposed on the second layer and including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer.

Abstract translation: 提供半导体发光器件。 半导体发光器件包括：支撑衬底; 设置在所述支撑基板上并对所述支撑基板施加拉伸应力的第一层; 设置在所述第一层上的接合层; 设置在所述接合层上并向所述支撑基板施加压缩应力的第二层; 以及发光结构，其设置在所述第二层上并且包括第一导电型半导体层，有源层和第二导电类型半导体层。

公开(公告)号：US20150084537A1

公开(公告)日：2015-03-26

申请号：US14338225

申请日：2014-07-22

Applicant: Pun Jae . CHOI ,  Sang Bum LEE ,  Jin Bock LEE ,  Yu Seung KIM ,  Sang Yeob SONG

Inventor： Pun Jae . CHOI ,  Sang Bum LEE ,  Jin Bock LEE ,  Yu Seung KIM ,  Sang Yeob SONG

IPC: H01L25/13 ,  H05B33/08 ,  H01L33/50 ,  H01L33/48 ,  H01L33/38 ,  H01L33/54

CPC classification number: H01L25/13 ,  H01L25/0753 ,  H01L33/002 ,  H01L33/0025 ,  H01L33/0029 ,  H01L33/08 ,  H01L33/20 ,  H01L33/22 ,  H01L33/382 ,  H01L33/387 ,  H01L33/40 ,  H01L33/44 ,  H01L33/486 ,  H01L33/502 ,  H01L33/504 ,  H01L33/507 ,  H01L33/508 ,  H01L33/54 ,  H01L33/56 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/48465 ,  H01L2224/49175 ,  H01L2224/8592 ,  H01L2924/0002 ,  H01L2924/1461 ,  H01L2924/181 ,  H01L2924/3025 ,  H01L2933/0041 ,  H05B33/0803 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

Abstract: In a semiconductor light emitting device, a light emitting structure includes a first-conductivity type semiconductor layer, an active layer, and a second-conductivity type semiconductor layer, which are sequentially formed on a conductive substrate. A second-conductivity type electrode includes a conductive via and an electrical connection part. The conductive via passes through the first-conductivity type semiconductor layer and the active layer, and is connected to the inside of the second-conductivity type semiconductor layer. The electrical connection part extends from the conductive via and is exposed to the outside of the light emitting structure. An insulator electrically separates the second-conductivity type electrode from the conductive substrate, the first-conductivity type semiconductor layer, and the active layer. A passivation layer is formed to cover at least a side surface of the active layer in the light emitting structure. An uneven structure is formed on a path of light emitted from the active layer.

公开(公告)号：US20130334585A1

公开(公告)日：2013-12-19

申请号：US13600020

申请日：2012-08-30

Applicant: Sang Bum LEE

Inventor： Sang Bum LEE

IPC: H01L29/788 ,  H01L29/78 ,  H01L21/336

CPC classification number: H01L27/11582 ,  H01L27/11568 ,  H01L29/66666 ,  H01L29/66833

Abstract: The semiconductor device includes a vertical channel layer formed on a substrate; conductive layer patterns and insulating layer patterns alternately formed around a length of each of the vertical channel layer; and a charge storing layer pattern formed between each of the vertical channel layers and the conductive layer patterns, where each of the charge storing layer patterns is isolated by the insulating layer patterns.

Abstract translation: 半导体器件包括形成在衬底上的垂直沟道层; 交替地形成在每个垂直沟道层的长度上的导电层图案和绝缘层图案; 以及形成在每个垂直沟道层和导电层图案之间的电荷存储层图案，其中每个电荷存储层图案被绝缘层图案隔离。

公开(公告)号：US20090085043A1

公开(公告)日：2009-04-02

申请号：US12210472

申请日：2008-09-15

Applicant: Sang Yeob SONG ,  Jin Hyun LEE ,  Yu Seung KIM ,  Kwang Ki CHOI ,  Pun Jae CHOI ,  Hyun Soo KIM ,  Sang Bum LEE

Inventor： Sang Yeob SONG ,  Jin Hyun LEE ,  Yu Seung KIM ,  Kwang Ki CHOI ,  Pun Jae CHOI ,  Hyun Soo KIM ,  Sang Bum LEE

IPC: H01L33/00

CPC classification number: H01L33/40 ,  H01L33/32

Abstract: Disclosed are a semiconductor light emitting device, which can improve characteristics of the semiconductor light emitting device such as a forward voltage characteristic and a turn-on voltage characteristic, increase light emission efficiency by lowering an input voltage, and increase reliability of the semiconductor light emitting device by a low-voltage operation, and a method of manufacturing the same. The semiconductor light emitting device includes: an n-type GaN semiconductor layer; an active layer formed on a gallium face of the n-type GaN semiconductor layer; a p-type semiconductor layer formed on the active layer; and an n-type electrode formed on a nitrogen face of the n-type GaN semiconductor layer and including a lanthanum (La)-nickel (Ni) alloy.

Abstract translation: 公开了一种半导体发光器件，其能够提高半导体发光器件的特性，例如正向电压特性和导通电压特性，通过降低输入电压来提高发光效率，并提高半导体发光器件的可靠性 器件的低压工作及其制造方法。 半导体发光器件包括：n型GaN半导体层; 形成在所述n型GaN半导体层的镓面上的有源层; 形成在有源层上的p型半导体层; 以及形成在n型GaN半导体层的氮面上并包含镧（La） - 镍（Ni）合金的n型电极。