摘要:
Electronic device packages with electromagnetic compatibility (EMC) coating thereon are presented. An electronic device package includes a chip scale package having a CMOS image sensor (CIS) array chip and a set of lenses configured with an aperture. An encapsulation is molded overlying the chip scale package. A shield is atop the encapsulation. A frame fixes the set of lenses to the encapsulation. An electromagnetic compatibility (EMC) coating is formed on the encapsulation to prevent electromagnetic interference.
摘要:
The invention provides a compact camera module. The compact camera module includes an image sensing device, a set of optical elements, and a zooming device. The set of optical elements connects to the image sensing device, and comprises a lens set. The zooming device connects to the set of optical elements for adjusting a distance between the lens set and the image sensing device. The zooming device directly electrically joins with the image sensing device.
摘要:
Electronic device packages with electromagnetic compatibility (EMC) coating thereon are presented. An electronic device package includes a chip scale package having a CMOS image sensor (CIS) array chip and a set of lenses configured with an aperture. An encapsulation is molded overlying the chip scale package. A shield is atop the encapsulation. A frame fixes the set of lenses to the encapsulation. An electromagnetic compatibility (EMC) coating is formed on the encapsulation to prevent electromagnetic interference.
摘要:
Solder bump structures for semiconductor device packaging is provided. In one embodiment, a solder bump structure comprises a semiconductor substrate, the substrate has at least one contact pad and an upper passivation layer having at least one opening formed therein exposing a portion of the contact pad. At least one patterned and etched polymer layer is formed on a portion of the contact pad. At least one patterned and etched conductive metal layer is formed above the polymer layer and is aligned therewith. And at least one layer of solder material having a solder height is provided above the conductive metal layer, the layer of solder is aligned with the conductive metal layer, the layer of solder is thereafter reflown thereby creating a solder ball.
摘要:
A method for forming solder bumps (or solder balls after reflow) of improved height and reliability is provided. In one embodiment, a semiconductor substrate having at least one contact pad and an upper passivation layer having at least one opening formed therein exposing a portion of the contact pad is provided. A layer of under bump metal (UBM) is formed above the passivation layer and the contact pad. A first patterned and etched photoresist layer is provided above the UBM layer, the first patterned and etched photoresist layer defining at least one first opening therein. A second patterned and etched photoresist layer is provided above the first patterned and etched photoresist layer, the second patterned and etched photoresist layer defining at least one second opening therein, the second opening being wider than the first opening. A solder material is filled in the at least one first opening and substantially filled in the at least one second opening. The first and second photoresist layers are removed and the solder material is reflown to create a solder ball of increased height.
摘要:
A method for fabricating a pad redistribution layer. First, at least one bonding pad exposed by a first passivation layer is provided. A diffusion barrier layer and a seed layer are then formed over the first passivation layer and the bonding pad. A patterned mask layer is then formed over the seed layer to expose a portion thereof over the bonding pad, and a metal layer is then formed thereon. A sacrificial layer is then formed over the substrate and the sacrificial layer over the patterned mask layer is removed. The conductive film exposed by the metal layer and the remaining sacrificial layer is then removed, leaving a pad redistribution layer for the bonding pad.
摘要:
Solder bump structures for semiconductor device packaging is provided. In one embodiment, a solder bump structure comprises a semiconductor substrate, the substrate has at least one contact pad and an upper passivation layer having at least one opening formed therein exposing a portion of the contact pad. At least one patterned and etched polymer layer is formed on a portion of the contact pad. At least one patterned and etched conductive metal layer is formed above the polymer layer and is aligned therewith. And at least one layer of solder material having a solder height is provided above the conductive metal layer, the layer of solder is aligned with the conductive metal layer, the layer of solder is thereafter reflown thereby creating a solder ball.
摘要:
A structure, a system, and a method for manufacture of crosstalk-free wafer level chip scale packaging (WLCSP) structure for high frequency applications is provided. An illustrative embodiment comprises a substrate on which various layers and structures form circuitry, a signal pin formed on the substrate and coupled with the circuitry, a ground ring encircling the signal pin, and a grounded solder bump coupled to the ground ring.
摘要:
A method for forming solder bumps (or solder balls after reflow) of improved height and reliability is provided. In one embodiment, a semiconductor substrate having at least one contact pad and an upper passivation layer having at least one opening formed therein exposing a portion of the contact pad is provided. A layer of under bump metal (UBM) is formed above the passivation layer and the contact pad. A first patterned and etched photoresist layer is provided above the UBM layer, the first patterned and etched photoresist layer defining at least one first opening therein. A second patterned and etched photoresist layer is provided above the first patterned and etched photoresist layer, the second patterned and etched photoresist layer defining at least one second opening therein, the second opening being wider than the first opening. A solder material is filled in the at least one first opening and substantially filled in the at least one second opening. The first and second photoresist layers are removed and the solder material is reflown to create a solder ball of increased height.
摘要:
A method of forming a bump on a substrate such as a semiconductor wafer or flip chip without producing metal ribbon residue. The method includes the step of providing a semiconductor device having a contact pad and having an upper passivation layer and an opening formed in the upper passivation layer exposing a portion of the contact pad. An under bump metallurgy is deposited over the upper passivation layer and the contact pad. A photoresist layer is deposited over the under bump metallurgy. The photoresist layer is a dry film photoresist. The photoresist layer is patterned to provide an opening in the photoresist layers down to the under bump metallurgy and aligned with the contact pad. Additional energy is applied to the photoresist layer to improve the adhesion of the photoresist layer to the under bump metallurgy. An electrically conductive material is deposited into the opening formed in the photoresist layers and overlying the under bump metallurgy and aligned with contact pad. Thereafter the remaining portions of the photoresist layer are removed. The electrically conductive material is reflown to provide a bump on the semiconductor device.