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公开(公告)号：US20090072399A1
公开(公告)日：2009-03-19
申请号：US12146792
申请日：2008-06-26
申请人： Shinichi Terashima , Tomohiro Uno , Kohei Tatsumi , Takashi Yamada , Atsuo Ikeda , Daizo Oda
发明人： Shinichi Terashima , Tomohiro Uno , Kohei Tatsumi , Takashi Yamada , Atsuo Ikeda , Daizo Oda
IPC分类号： H01L23/49
CPC分类号： H01L24/85 , H01L24/05 , H01L24/43 , H01L24/45 , H01L24/48 , H01L2224/04042 , H01L2224/05624 , H01L2224/05639 , H01L2224/05664 , H01L2224/43 , H01L2224/45015 , H01L2224/45124 , H01L2224/45139 , H01L2224/45144 , H01L2224/48247 , H01L2224/48471 , H01L2224/48624 , H01L2224/48639 , H01L2224/48664 , H01L2224/48724 , H01L2224/48739 , H01L2224/48764 , H01L2224/85205 , H01L2224/85439 , H01L2224/85464 , H01L2224/859 , H01L2924/00011 , H01L2924/00014 , H01L2924/01005 , H01L2924/01007 , H01L2924/01014 , H01L2924/01015 , H01L2924/01016 , H01L2924/01018 , H01L2924/0102 , H01L2924/01022 , H01L2924/01023 , H01L2924/01027 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/01057 , H01L2924/01059 , H01L2924/01072 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01204 , H01L2924/10253 , H01L2924/20105 , H01L2924/20106 , H01L2924/20107 , H01L2924/20108 , H01L2924/20752 , H01L2924/20753 , H01L2924/20754 , H01L2924/20755 , H01L2924/01013 , H01L2924/01004 , H01L2924/01026 , H01L2924/00 , H01L2224/48227 , H01L2924/01025 , H01L2924/013 , H01L2924/20759 , H01L2924/2076 , H01L2924/00015 , H01L2924/2075 , H01L2924/00013 , H01L2924/01006 , H01L2224/4554
摘要： There is provided a bonding wire which does not cause a leaning failure or the like. A semiconductor mounting bonding wire has a breaking elongation of 7 to 20%, and stress at 1% elongation is greater than or equal to 90% of a tensile strength and is less than or equal to 100% thereof.
摘要翻译： 提供了不会引起倾斜故障等的接合线。 半导体安装接合线的断裂伸长率为7〜20％，伸长率为1％的应力为拉伸强度的90％以上且小于等于100％。
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公开(公告)号：US08097960B2
公开(公告)日：2012-01-17
申请号：US12146792
申请日：2008-06-26
申请人： Shinichi Terashima , Tomohiro Uno , Kohei Tatsumi , Takashi Yamada , Atsuo Ikeda , Daizo Oda
发明人： Shinichi Terashima , Tomohiro Uno , Kohei Tatsumi , Takashi Yamada , Atsuo Ikeda , Daizo Oda
IPC分类号： H01L23/48
CPC分类号： H01L24/85 , H01L24/05 , H01L24/43 , H01L24/45 , H01L24/48 , H01L2224/04042 , H01L2224/05624 , H01L2224/05639 , H01L2224/05664 , H01L2224/43 , H01L2224/45015 , H01L2224/45124 , H01L2224/45139 , H01L2224/45144 , H01L2224/48247 , H01L2224/48471 , H01L2224/48624 , H01L2224/48639 , H01L2224/48664 , H01L2224/48724 , H01L2224/48739 , H01L2224/48764 , H01L2224/85205 , H01L2224/85439 , H01L2224/85464 , H01L2224/859 , H01L2924/00011 , H01L2924/00014 , H01L2924/01005 , H01L2924/01007 , H01L2924/01014 , H01L2924/01015 , H01L2924/01016 , H01L2924/01018 , H01L2924/0102 , H01L2924/01022 , H01L2924/01023 , H01L2924/01027 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/01057 , H01L2924/01059 , H01L2924/01072 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01204 , H01L2924/10253 , H01L2924/20105 , H01L2924/20106 , H01L2924/20107 , H01L2924/20108 , H01L2924/20752 , H01L2924/20753 , H01L2924/20754 , H01L2924/20755 , H01L2924/01013 , H01L2924/01004 , H01L2924/01026 , H01L2924/00 , H01L2224/48227 , H01L2924/01025 , H01L2924/013 , H01L2924/20759 , H01L2924/2076 , H01L2924/00015 , H01L2924/2075 , H01L2924/00013 , H01L2924/01006 , H01L2224/4554
摘要： There is provided a bonding wire which does not cause a leaning failure or the like. A semiconductor mounting bonding wire has a breaking elongation of 7 to 20%, and stress at 1% elongation is greater than or equal to 90% of a tensile strength and is less than or equal to 100% thereof.
摘要翻译： 提供了不会引起倾斜故障等的接合线。 半导体安装接合线的断裂伸长率为7〜20％，伸长率为1％的应力为拉伸强度的90％以上且小于等于100％。
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公开(公告)号：US08815019B2
公开(公告)日：2014-08-26
申请号：US12993401
申请日：2010-02-12
申请人： Tomohiro Uno , Shinichi Terashima , Takashi Yamada , Ryo Oishi , Daizo Oda
发明人： Tomohiro Uno , Shinichi Terashima , Takashi Yamada , Ryo Oishi , Daizo Oda
IPC分类号： B23K35/34
CPC分类号： C22C5/02 , B32B15/018 , C22C5/04 , C22C5/06 , C22C9/00 , C22C21/02 , C22C21/12 , H01L24/43 , H01L24/45 , H01L2224/05624 , H01L2224/43 , H01L2224/43848 , H01L2224/43986 , H01L2224/45015 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/45164 , H01L2224/45169 , H01L2224/45565 , H01L2224/45572 , H01L2224/45644 , H01L2224/45664 , H01L2224/45686 , H01L2224/4569 , H01L2224/48011 , H01L2224/48247 , H01L2224/48471 , H01L2224/48479 , H01L2224/48624 , H01L2224/48639 , H01L2224/48644 , H01L2224/48664 , H01L2224/48839 , H01L2224/48844 , H01L2224/48864 , H01L2224/85045 , H01L2224/85065 , H01L2224/85075 , H01L2224/85186 , H01L2224/85207 , H01L2224/85439 , H01L2224/85444 , H01L2224/85464 , H01L2924/00011 , H01L2924/00015 , H01L2924/01005 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01018 , H01L2924/01024 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01045 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/10253 , H01L2924/14 , H01L2924/181 , H01L2924/20751 , H01L2924/20752 , H01L2924/20753 , H01L2924/3025 , Y10T428/12222 , H01L2924/01001 , H01L2924/00014 , H01L2924/20754 , H01L2924/20105 , H01L2924/20106 , H01L2924/20107 , H01L2924/01202 , H01L2924/01007 , H01L2924/01205 , H01L2224/45639 , H01L2224/45669 , H01L2224/45655 , H01L2224/45657 , H01L2224/45671 , H01L2224/45666 , H01L2924/20656 , H01L2924/20652 , H01L2924/20645 , H01L2924/20654 , H01L2924/20655 , H01L2924/00 , H01L2224/48227 , H01L2224/48824 , H01L2924/013 , H01L2924/20108 , H01L2924/20109 , H01L2924/2011 , H01L2924/20111 , H01L2924/00013 , H01L2924/01049 , H01L2924/01006
摘要： It is an object of the present invention to provide a multilayer wire which can accomplish both ball bonding property and wire workability simultaneously, and which enhances a loop stability, a pull strength, and a wedge bonding property. A semiconductor bonding wire comprises a core member mainly composed of equal to or greater than one kind of following elements: Cu, Au, and Ag, and an outer layer formed on the core member and mainly composed of Pd. A total hydrogen concentration contained in a whole wire is within a range from 0.0001 to 0.008 mass %.
摘要翻译： 本发明的目的是提供一种能够同时实现滚珠接合性能和线加工性的多层线材，并且提高了环路稳定性，拉伸强度和楔形粘合性能。 半导体接合线包括主要由等于或大于一种以下元素构成的芯部件：Cu，Au和Ag，以及形成在芯部件上并主要由Pd构成的外层。 总线中含有的总氢浓度在0.0001〜0.008质量％的范围内。
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公开(公告)号：US08742258B2
公开(公告)日：2014-06-03
申请号：US13384819
申请日：2010-07-16
申请人： Shinichi Terashima , Tomohiro Uno , Takashi Yamada , Daizo Oda
发明人： Shinichi Terashima , Tomohiro Uno , Takashi Yamada , Daizo Oda
IPC分类号： H01B5/00
CPC分类号： C22C5/04 , C22C5/02 , C22C5/06 , C22C9/00 , H01L24/43 , H01L24/45 , H01L2224/05624 , H01L2224/4312 , H01L2224/4321 , H01L2224/43848 , H01L2224/45015 , H01L2224/45124 , H01L2224/45147 , H01L2224/4516 , H01L2224/45565 , H01L2224/45572 , H01L2224/45639 , H01L2224/45644 , H01L2224/45664 , H01L2224/48011 , H01L2224/48247 , H01L2224/48471 , H01L2224/4851 , H01L2224/48624 , H01L2224/48724 , H01L2224/48739 , H01L2224/48744 , H01L2224/48764 , H01L2224/48824 , H01L2224/48839 , H01L2224/48844 , H01L2224/48864 , H01L2224/78301 , H01L2224/85045 , H01L2224/85065 , H01L2224/85075 , H01L2224/85181 , H01L2224/85186 , H01L2224/85207 , H01L2224/85439 , H01L2224/85444 , H01L2224/85464 , H01L2224/85564 , H01L2924/00011 , H01L2924/00015 , H01L2924/014 , H01L2924/10253 , H01L2924/15311 , H01L2924/20751 , H01L2924/20752 , H01L2924/20753 , H01L2924/20754 , H01L2924/20755 , H01L2924/01034 , H01L2924/01005 , H01L2924/01015 , H01L2924/01046 , H01L2924/01047 , H01L2924/0102 , H01L2924/01013 , H01L2924/00014 , H01L2224/45144 , H01L2924/01204 , H01L2924/20105 , H01L2924/20106 , H01L2924/20107 , H01L2924/20108 , H01L2924/01001 , H01L2924/20756 , H01L2924/20757 , H01L2924/20758 , H01L2924/01028 , H01L2924/0105 , H01L2924/01007 , H01L2224/45669 , H01L2924/2076 , H01L2924/01018 , H01L2224/48465 , H01L2924/20654 , H01L2924/20652 , H01L2924/20655 , H01L2924/00 , H01L2924/013 , H01L2924/20109 , H01L2924/2011 , H01L2924/20111 , H01L2924/01004 , H01L2924/01033
摘要： A bonding wire for semiconductor includes: a core wire of copper or a copper alloy; a coating layer containing palladium and having a thickness of 10 to 200 nm; and an alloy layer formed on a surface of the coating layer. The alloy layer contains a noble metal and palladium and having a thickness of 1 to 80 nm. The noble metal is either gold or silver, and a concentration of the noble metal in the alloy layer is not less than 10% and not more than 75% by volume.
摘要翻译： 用于半导体的接合线包括：铜或铜合金的芯线; 含有钯的涂层，其厚度为10〜200nm; 以及形成在所述涂层的表面上的合金层。 合金层含有贵金属和钯，厚度为1〜80nm。 贵金属为金或银，合金层中贵金属的浓度为10体积％以上且75体积％以下。
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公开(公告)号：US20120094121A1
公开(公告)日：2012-04-19
申请号：US13380123
申请日：2010-06-23
申请人： Tomohiro Uno , Shinichi Terashima , Takashi Yamada , Daizo Oda
发明人： Tomohiro Uno , Shinichi Terashima , Takashi Yamada , Daizo Oda
CPC分类号： B23K35/302 , B21C1/003 , B21C37/047 , B23K35/0261 , C22C9/00 , C22F1/08 , H01L24/43 , H01L24/45 , H01L24/48 , H01L2224/05624 , H01L2224/4321 , H01L2224/435 , H01L2224/43848 , H01L2224/45015 , H01L2224/45144 , H01L2224/45147 , H01L2224/4554 , H01L2224/48227 , H01L2224/48247 , H01L2224/48465 , H01L2224/48507 , H01L2224/4851 , H01L2224/48599 , H01L2224/48624 , H01L2224/48824 , H01L2224/85181 , H01L2224/85439 , H01L2224/85444 , H01L2924/00011 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01018 , H01L2924/01022 , H01L2924/01025 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01045 , H01L2924/01046 , H01L2924/01047 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/10253 , H01L2924/15747 , H01L2924/181 , H01L2924/20751 , H01L2924/20752 , H01L2924/20755 , Y10T428/2958 , H01L2924/00014 , H01L2924/00 , H01L2924/00015 , H01L2924/013 , H01L2924/20108 , H01L2924/20109 , H01L2924/2011 , H01L2924/20111 , H01L2924/00013 , H01L2924/01012
摘要： The present invention is a copper-based bonding wire for use in a semiconductor element. The bonding wire of the present invention can be manufactured with an inexpensive material cost, and has a superior PCT reliability in a high-humidity/temperature environment. Further, the bonding wire of the present invention exhibits: a favorable TCT reliability through a thermal cycle test; a favorable press-bonded ball shape; a favorable wedge bondability; a favorable loop formability, and so on. Specifically, the bonding wire of the present invention is a copper alloy bonding wire for semiconductor manufactured by drawing a copper alloy containing 0.13 to 1.15% by mass of Pd and a remainder comprised of copper and unavoidable impurities.
摘要翻译： 本发明是用于半导体元件的铜基接合线。 本发明的接合线可以以廉价的材料成本制造，并且在高湿度/温度环境中具有优异的PCT可靠性。 此外，本发明的接合线通过热循环试验表现出良好的TCT可靠性; 有利的压合球形; 有利的楔形粘合性; 良好的循环成形性等。 具体地，本发明的接合线是通过拉伸含有0.13〜1.15质量％的Pd，余量由铜和不可避免的杂质构成的铜合金制造的半导体用铜合金接合线。
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公开(公告)号：US09427830B2
公开(公告)日：2016-08-30
申请号：US13380123
申请日：2010-06-23
申请人： Tomohiro Uno , Shinichi Terashima , Takashi Yamada , Daizo Oda
发明人： Tomohiro Uno , Shinichi Terashima , Takashi Yamada , Daizo Oda
IPC分类号： C22C9/08 , B32B15/20 , B23K35/30 , B21C1/00 , B21C37/04 , B23K35/02 , C22C9/00 , C22F1/08 , H01L23/00
CPC分类号： B23K35/302 , B21C1/003 , B21C37/047 , B23K35/0261 , C22C9/00 , C22F1/08 , H01L24/43 , H01L24/45 , H01L24/48 , H01L2224/05624 , H01L2224/4321 , H01L2224/435 , H01L2224/43848 , H01L2224/45015 , H01L2224/45144 , H01L2224/45147 , H01L2224/4554 , H01L2224/48227 , H01L2224/48247 , H01L2224/48465 , H01L2224/48507 , H01L2224/4851 , H01L2224/48599 , H01L2224/48624 , H01L2224/48824 , H01L2224/85181 , H01L2224/85439 , H01L2224/85444 , H01L2924/00011 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01018 , H01L2924/01022 , H01L2924/01025 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01045 , H01L2924/01046 , H01L2924/01047 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/10253 , H01L2924/15747 , H01L2924/181 , H01L2924/20751 , H01L2924/20752 , H01L2924/20755 , Y10T428/2958 , H01L2924/00014 , H01L2924/00 , H01L2924/00015 , H01L2924/013 , H01L2924/20108 , H01L2924/20109 , H01L2924/2011 , H01L2924/20111 , H01L2924/00013 , H01L2924/01012
摘要： The present invention is a copper-based bonding wire for use in a semiconductor element. The bonding wire of the present invention can be manufactured with an inexpensive material cost, and has a superior PCT reliability in a high-humidity/temperature environment. Further, the bonding wire of the present invention exhibits: a favorable TCT reliability through a thermal cycle test; a favorable press-bonded ball shape; a favorable wedge bondability; a favorable loop formability, and so on. Specifically, the bonding wire of the present invention is a copper alloy bonding wire for semiconductor manufactured by drawing a copper alloy containing 0.13 to 1.15% by mass of Pd and a remainder comprised of copper and unavoidable impurities.
摘要翻译： 本发明是用于半导体元件的铜基接合线。 本发明的接合线可以以廉价的材料成本制造，并且在高湿度/温度环境中具有优异的PCT可靠性。 此外，本发明的接合线通过热循环试验表现出良好的TCT可靠性; 有利的压合球形; 有利的楔形粘合性; 良好的循环成形性等。 具体地，本发明的接合线是通过拉伸含有0.13〜1.15质量％的Pd，余量由铜和不可避免的杂质构成的铜合金而制造的半导体用铜合金接合线。
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公开(公告)号：US20130306352A2
公开(公告)日：2013-11-21
申请号：US13384819
申请日：2010-07-16
申请人： Shinichi Terashima , Tomohiro Uno , Takashi Yamada , Daizo Oda
发明人： Shinichi Terashima , Tomohiro Uno , Takashi Yamada , Daizo Oda
IPC分类号： H01B5/00
CPC分类号： C22C5/04 , C22C5/02 , C22C5/06 , C22C9/00 , H01L24/43 , H01L24/45 , H01L2224/05624 , H01L2224/4312 , H01L2224/4321 , H01L2224/43848 , H01L2224/45015 , H01L2224/45124 , H01L2224/45147 , H01L2224/4516 , H01L2224/45565 , H01L2224/45572 , H01L2224/45639 , H01L2224/45644 , H01L2224/45664 , H01L2224/48011 , H01L2224/48247 , H01L2224/48471 , H01L2224/4851 , H01L2224/48624 , H01L2224/48724 , H01L2224/48739 , H01L2224/48744 , H01L2224/48764 , H01L2224/48824 , H01L2224/48839 , H01L2224/48844 , H01L2224/48864 , H01L2224/78301 , H01L2224/85045 , H01L2224/85065 , H01L2224/85075 , H01L2224/85181 , H01L2224/85186 , H01L2224/85207 , H01L2224/85439 , H01L2224/85444 , H01L2224/85464 , H01L2224/85564 , H01L2924/00011 , H01L2924/00015 , H01L2924/014 , H01L2924/10253 , H01L2924/15311 , H01L2924/20751 , H01L2924/20752 , H01L2924/20753 , H01L2924/20754 , H01L2924/20755 , H01L2924/01034 , H01L2924/01005 , H01L2924/01015 , H01L2924/01046 , H01L2924/01047 , H01L2924/0102 , H01L2924/01013 , H01L2924/00014 , H01L2224/45144 , H01L2924/01204 , H01L2924/20105 , H01L2924/20106 , H01L2924/20107 , H01L2924/20108 , H01L2924/01001 , H01L2924/20756 , H01L2924/20757 , H01L2924/20758 , H01L2924/01028 , H01L2924/0105 , H01L2924/01007 , H01L2224/45669 , H01L2924/2076 , H01L2924/01018 , H01L2224/48465 , H01L2924/20654 , H01L2924/20652 , H01L2924/20655 , H01L2924/00 , H01L2924/013 , H01L2924/20109 , H01L2924/2011 , H01L2924/20111 , H01L2924/01004 , H01L2924/01033
摘要： There is provided a bonding wire for semiconductor, capable of ensuring a favorable wedge bondability even when bonded to a palladium-plated lead frame, superior in oxidation resistivity and having a core wire of copper or a copper alloy. This bonding wire comprises: a core wire of copper or a copper alloy; a coating layer containing palladium and having a thickness of 10 to 200 nm; and an alloy layer formed on a surface of the coating layer, such alloy layer containing a noble metal and palladium and having a thickness of 1 to 80 nm. The aforementioned noble metal is either silver or metal, and a concentration of such noble metal in the alloy layer is not less than 10% and not more than 75% by volume.
摘要翻译： 提供了一种用于半导体的接合线，即使在与具有优异的耐氧化性且具有铜或铜合金的芯线的钯电镀引线框上接合时也能确保良好的楔粘接性。 该接合线包括：铜或铜合金的芯线; 含有钯的涂层，其厚度为10〜200nm; 以及形成在涂层的表面上的合金层，该合金层含有贵金属和钯，厚度为1〜80nm。 上述贵金属是银或金属，合金层中这种贵金属的浓度不小于10体积％且不大于75体积％。
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公开(公告)号：US20120118610A1
公开(公告)日：2012-05-17
申请号：US13384819
申请日：2010-07-16
申请人： Shinichi Terashima , Tomohiro Uno , Takashi Yamada , Daizo Oda
发明人： Shinichi Terashima , Tomohiro Uno , Takashi Yamada , Daizo Oda
IPC分类号： H01B5/00
CPC分类号： C22C5/04 , C22C5/02 , C22C5/06 , C22C9/00 , H01L24/43 , H01L24/45 , H01L2224/05624 , H01L2224/4312 , H01L2224/4321 , H01L2224/43848 , H01L2224/45015 , H01L2224/45124 , H01L2224/45147 , H01L2224/4516 , H01L2224/45565 , H01L2224/45572 , H01L2224/45639 , H01L2224/45644 , H01L2224/45664 , H01L2224/48011 , H01L2224/48247 , H01L2224/48471 , H01L2224/4851 , H01L2224/48624 , H01L2224/48724 , H01L2224/48739 , H01L2224/48744 , H01L2224/48764 , H01L2224/48824 , H01L2224/48839 , H01L2224/48844 , H01L2224/48864 , H01L2224/78301 , H01L2224/85045 , H01L2224/85065 , H01L2224/85075 , H01L2224/85181 , H01L2224/85186 , H01L2224/85207 , H01L2224/85439 , H01L2224/85444 , H01L2224/85464 , H01L2224/85564 , H01L2924/00011 , H01L2924/00015 , H01L2924/014 , H01L2924/10253 , H01L2924/15311 , H01L2924/20751 , H01L2924/20752 , H01L2924/20753 , H01L2924/20754 , H01L2924/20755 , H01L2924/01034 , H01L2924/01005 , H01L2924/01015 , H01L2924/01046 , H01L2924/01047 , H01L2924/0102 , H01L2924/01013 , H01L2924/00014 , H01L2224/45144 , H01L2924/01204 , H01L2924/20105 , H01L2924/20106 , H01L2924/20107 , H01L2924/20108 , H01L2924/01001 , H01L2924/20756 , H01L2924/20757 , H01L2924/20758 , H01L2924/01028 , H01L2924/0105 , H01L2924/01007 , H01L2224/45669 , H01L2924/2076 , H01L2924/01018 , H01L2224/48465 , H01L2924/20654 , H01L2924/20652 , H01L2924/20655 , H01L2924/00 , H01L2924/013 , H01L2924/20109 , H01L2924/2011 , H01L2924/20111 , H01L2924/01004 , H01L2924/01033
摘要： There is provided a bonding wire for semiconductor, capable of ensuring a favorable wedge bondability even when bonded to a palladium-plated lead frame, superior in oxidation resistivity and having a core wire of copper or a copper alloy. This bonding wire comprises: a core wire of copper or a copper alloy; a coating layer containing palladium and having a thickness of 10 to 200 nm; and an alloy layer formed on a surface of the coating layer, such alloy layer containing a noble metal and palladium and having a thickness of 1 to 80 nm. The aforementioned noble metal is either silver or metal, and a concentration of such noble metal in the alloy layer is not less than 10% and not more than 75% by volume.
摘要翻译： 提供了一种用于半导体的接合线，即使在与具有优异的耐氧化性且具有铜或铜合金的芯线的钯电镀引线框上接合时也能确保良好的楔粘接性。 该接合线包括：铜或铜合金的芯线; 含有钯的涂层，其厚度为10〜200nm; 以及形成在涂层的表面上的合金层，该合金层含有贵金属和钯，厚度为1〜80nm。 上述贵金属是银或金属，合金层中这种贵金属的浓度不小于10体积％且不大于75体积％。
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公开(公告)号：US20110120594A1
公开(公告)日：2011-05-26
申请号：US12993401
申请日：2010-02-12
申请人： Tomohiro Uno , Shinichi Terashima , Takashi Yamada , Ryo Oishi , Daizo Oda
发明人： Tomohiro Uno , Shinichi Terashima , Takashi Yamada , Ryo Oishi , Daizo Oda
CPC分类号： C22C5/02 , B32B15/018 , C22C5/04 , C22C5/06 , C22C9/00 , C22C21/02 , C22C21/12 , H01L24/43 , H01L24/45 , H01L2224/05624 , H01L2224/43 , H01L2224/43848 , H01L2224/43986 , H01L2224/45015 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/45164 , H01L2224/45169 , H01L2224/45565 , H01L2224/45572 , H01L2224/45644 , H01L2224/45664 , H01L2224/45686 , H01L2224/4569 , H01L2224/48011 , H01L2224/48247 , H01L2224/48471 , H01L2224/48479 , H01L2224/48624 , H01L2224/48639 , H01L2224/48644 , H01L2224/48664 , H01L2224/48839 , H01L2224/48844 , H01L2224/48864 , H01L2224/85045 , H01L2224/85065 , H01L2224/85075 , H01L2224/85186 , H01L2224/85207 , H01L2224/85439 , H01L2224/85444 , H01L2224/85464 , H01L2924/00011 , H01L2924/00015 , H01L2924/01005 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01018 , H01L2924/01024 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01045 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/10253 , H01L2924/14 , H01L2924/181 , H01L2924/20751 , H01L2924/20752 , H01L2924/20753 , H01L2924/3025 , Y10T428/12222 , H01L2924/01001 , H01L2924/00014 , H01L2924/20754 , H01L2924/20105 , H01L2924/20106 , H01L2924/20107 , H01L2924/01202 , H01L2924/01007 , H01L2924/01205 , H01L2224/45639 , H01L2224/45669 , H01L2224/45655 , H01L2224/45657 , H01L2224/45671 , H01L2224/45666 , H01L2924/20656 , H01L2924/20652 , H01L2924/20645 , H01L2924/20654 , H01L2924/20655 , H01L2924/00 , H01L2224/48227 , H01L2224/48824 , H01L2924/013 , H01L2924/20108 , H01L2924/20109 , H01L2924/2011 , H01L2924/20111 , H01L2924/00013 , H01L2924/01049 , H01L2924/01006
摘要： It is an object of the present invention to provide a multilayer wire which can accomplish both ball bonding property and wire workability simultaneously, and which enhances a loop stability, a pull strength, and a wedge bonding property. A semiconductor bonding wire comprises a core member mainly composed of equal to or greater than one kind of following elements: Cu, Au, and Ag, and an outer layer formed on the core member and mainly composed of Pd. A total hydrogen concentration contained in a whole wire is within a range from 0.0001 to 0.008 mass %.
摘要翻译： 本发明的目的是提供一种能够同时实现滚珠接合性能和线加工性的多层线材，并且提高了环路稳定性，拉伸强度和楔形粘合性能。 半导体接合线包括主要由等于或大于一种以下元素构成的芯部件：Cu，Au和Ag，以及形成在芯部件上并主要由Pd构成的外层。 总线中含有的总氢浓度在0.0001〜0.008质量％的范围内。
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10.发明授权Gold bonding wires for semiconductor devices and method of producing the wires 有权用于半导体器件的金键合线及其制造方法公开(公告)号：US07390370B2
公开(公告)日：2008-06-24
申请号：US10502676
申请日：2003-10-03
申请人： Tomohiro Uno , Shinichi Terashima , Kohei Tatsumi
发明人： Tomohiro Uno , Shinichi Terashima , Kohei Tatsumi
IPC分类号： C22C5/02
CPC分类号： C22C5/02 , H01L24/43 , H01L24/45 , H01L2224/05624 , H01L2224/4321 , H01L2224/45015 , H01L2224/45144 , H01L2224/4851 , H01L2224/48624 , H01L2924/00011 , H01L2924/01014 , H01L2924/01015 , H01L2924/0102 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01052 , H01L2924/01057 , H01L2924/01058 , H01L2924/0106 , H01L2924/01061 , H01L2924/01063 , H01L2924/01064 , H01L2924/01065 , H01L2924/01066 , H01L2924/0107 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01088 , H01L2924/01204 , H01L2924/01322 , H01L2924/014 , H01L2924/10253 , H01L2924/1433 , H01L2924/181 , H01L2924/20751 , H01L2924/20752 , Y10T428/2913 , H01L2924/01039 , H01L2924/01049 , H01L2924/01004 , H01L2924/01203 , H01L2924/00 , H01L2924/013 , H01L2924/01006
摘要： Gold bonding wires for semiconductor devices featuring increased strength and modulus of elasticity, stable loop shapes, suppressing the flow of wires, suppressing the leaning, and totally improved junctions of the wedge junction portions or wear characteristics for realizing a narrow-pitch connection, and enhanced the productivity on an industrial scale, and a method of producing the same. A gold bonding wire for a semiconductor device has a crystal grain structure in cross section in the lengthwise direction of the bonding wire, wherein a ratio of the area of crystal grains having an orientation [111] to the area of crystal grains having an orientation [100] is not smaller than 1.2 in the crystal orientations in the lengthwise direction of the wire.
摘要翻译： 用于半导体器件的金键合线具有增强的强度和弹性模量，稳定的环形形状，抑制线的流动，抑制倾斜，并且完全改善楔形接合部分的接合部或用于实现窄节距连接的磨损特性，并且增强 工业规模的生产率及其制造方法。 用于半导体器件的金键合线在接合线的长度方向具有截面的晶粒结构，其中具有取向[111]的晶粒面积与具有取向的晶粒面积的比例[ 100]在线的长度方向上的晶体取向不小于1.2。
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