公开(公告)号：US09024442B2

公开(公告)日：2015-05-05

申请号：US13508864

申请日：2011-08-04

申请人： Shinichi Terashima ,  Masamoto Tanaka ,  Katsuichi Kimura

发明人： Shinichi Terashima ,  Masamoto Tanaka ,  Katsuichi Kimura

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  B23K35/26 ,  C22C13/00 ,  H01L23/00 ,  H01L23/498 ,  H01L23/31 ,  H05K3/34

CPC分类号： B23K35/262 ,  C22C13/00 ,  H01L23/3114 ,  H01L23/49816 ,  H01L23/49866 ,  H01L24/13 ,  H01L24/81 ,  H01L2224/0401 ,  H01L2224/05082 ,  H01L2224/05083 ,  H01L2224/11334 ,  H01L2224/13005 ,  H01L2224/13099 ,  H01L2224/13111 ,  H01L2224/13688 ,  H01L2224/81801 ,  H01L2924/00013 ,  H01L2924/01004 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01025 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01051 ,  H01L2924/01057 ,  H01L2924/01058 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/351 ,  H01L2924/3512 ,  H01L2924/3651 ,  H01L2924/37 ,  H05K3/3436 ,  H05K3/3463 ,  H05K2203/041 ,  H01L2224/05644 ,  H01L2224/05164 ,  H01L2224/05155 ,  H01L2224/05147 ,  H01L2924/01083 ,  H01L2924/01028 ,  H01L2924/01015 ,  H01L2924/01027 ,  H01L2924/01026 ,  H01L2924/2076 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/05099 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2924/00

摘要： The present invention relates to a solder ball for semiconductor packaging and an electronic member having such solder ball. Specifically there are provided: a solder ball capable of ensuring a sufficient thermal fatigue property even when a diameter thereof is not larger than 250 μm as observed in recent years; and an electronic member having such solder ball. More specifically, there are provided: a solder ball for semiconductor packaging that is made of a solder alloy containing Sn as a main element, 0.1-2.5% Ag by mass, 0.1-1.5% Cu by mass and at least one of Mg, Al and Zn in a total amount of 0.0001-0.005% by mass, such solder ball having a surface including a noncrystalline phase that has a thickness of 1-50 nm and contains at least one of Mg, Al and Zn, O and Sn, and an electronic member having such solder ball.

摘要翻译： 本发明涉及一种用于半导体封装的焊球和具有这种焊球的电子部件。 具体地说，提供了一种能够确保近年来观察到的直径不大于250μm时的足够的热疲劳特性的焊球; 以及具有这种焊球的电子部件。 更具体地说，提供一种半导体封装用焊料球，其由以Sn为主要元素的焊料合金制成，质量％为0.1〜2.5质量％，Cu为0.1〜1.5质量％，Mg，Al 和Zn，其总量为0.0001-0.005质量％，这种焊球具有包括厚度为1-50nm并且包含Mg，Al和Zn，O和Sn中的至少一种的非晶相的表面，以及 具有这种焊球的电子部件。

公开(公告)号：US08742258B2

公开(公告)日：2014-06-03

申请号：US13384819

申请日：2010-07-16

申请人： Shinichi Terashima ,  Tomohiro Uno ,  Takashi Yamada ,  Daizo Oda

发明人： Shinichi Terashima ,  Tomohiro Uno ,  Takashi Yamada ,  Daizo Oda

IPC分类号： H01B5/00

CPC分类号： C22C5/04 ,  C22C5/02 ,  C22C5/06 ,  C22C9/00 ,  H01L24/43 ,  H01L24/45 ,  H01L2224/05624 ,  H01L2224/4312 ,  H01L2224/4321 ,  H01L2224/43848 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45147 ,  H01L2224/4516 ,  H01L2224/45565 ,  H01L2224/45572 ,  H01L2224/45639 ,  H01L2224/45644 ,  H01L2224/45664 ,  H01L2224/48011 ,  H01L2224/48247 ,  H01L2224/48471 ,  H01L2224/4851 ,  H01L2224/48624 ,  H01L2224/48724 ,  H01L2224/48739 ,  H01L2224/48744 ,  H01L2224/48764 ,  H01L2224/48824 ,  H01L2224/48839 ,  H01L2224/48844 ,  H01L2224/48864 ,  H01L2224/78301 ,  H01L2224/85045 ,  H01L2224/85065 ,  H01L2224/85075 ,  H01L2224/85181 ,  H01L2224/85186 ,  H01L2224/85207 ,  H01L2224/85439 ,  H01L2224/85444 ,  H01L2224/85464 ,  H01L2224/85564 ,  H01L2924/00011 ,  H01L2924/00015 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/15311 ,  H01L2924/20751 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/20754 ,  H01L2924/20755 ,  H01L2924/01034 ,  H01L2924/01005 ,  H01L2924/01015 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0102 ,  H01L2924/01013 ,  H01L2924/00014 ,  H01L2224/45144 ,  H01L2924/01204 ,  H01L2924/20105 ,  H01L2924/20106 ,  H01L2924/20107 ,  H01L2924/20108 ,  H01L2924/01001 ,  H01L2924/20756 ,  H01L2924/20757 ,  H01L2924/20758 ,  H01L2924/01028 ,  H01L2924/0105 ,  H01L2924/01007 ,  H01L2224/45669 ,  H01L2924/2076 ,  H01L2924/01018 ,  H01L2224/48465 ,  H01L2924/20654 ,  H01L2924/20652 ,  H01L2924/20655 ,  H01L2924/00 ,  H01L2924/013 ,  H01L2924/20109 ,  H01L2924/2011 ,  H01L2924/20111 ,  H01L2924/01004 ,  H01L2924/01033

摘要： A bonding wire for semiconductor includes: a core wire of copper or a copper alloy; a coating layer containing palladium and having a thickness of 10 to 200 nm; and an alloy layer formed on a surface of the coating layer. The alloy layer contains a noble metal and palladium and having a thickness of 1 to 80 nm. The noble metal is either gold or silver, and a concentration of the noble metal in the alloy layer is not less than 10% and not more than 75% by volume.

摘要翻译： 用于半导体的接合线包括：铜或铜合金的芯线; 含有钯的涂层，其厚度为10〜200nm; 以及形成在所述涂层的表面上的合金层。 合金层含有贵金属和钯，厚度为1〜80nm。 贵金属为金或银，合金层中贵金属的浓度为10体积％以上且75体积％以下。

公开(公告)号：US20120223430A1

公开(公告)日：2012-09-06

申请号：US13508864

申请日：2011-08-04

申请人： Shinichi Terashima ,  Masamoto Tanaka ,  Katsuichi Kimura

发明人： Shinichi Terashima ,  Masamoto Tanaka ,  Katsuichi Kimura

IPC分类号： B23K35/26 ,  H01L23/488

CPC分类号： B23K35/262 ,  C22C13/00 ,  H01L23/3114 ,  H01L23/49816 ,  H01L23/49866 ,  H01L24/13 ,  H01L24/81 ,  H01L2224/0401 ,  H01L2224/05082 ,  H01L2224/05083 ,  H01L2224/11334 ,  H01L2224/13005 ,  H01L2224/13099 ,  H01L2224/13111 ,  H01L2224/13688 ,  H01L2224/81801 ,  H01L2924/00013 ,  H01L2924/01004 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01025 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01051 ,  H01L2924/01057 ,  H01L2924/01058 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/351 ,  H01L2924/3512 ,  H01L2924/3651 ,  H01L2924/37 ,  H05K3/3436 ,  H05K3/3463 ,  H05K2203/041 ,  H01L2224/05644 ,  H01L2224/05164 ,  H01L2224/05155 ,  H01L2224/05147 ,  H01L2924/01083 ,  H01L2924/01028 ,  H01L2924/01015 ,  H01L2924/01027 ,  H01L2924/01026 ,  H01L2924/2076 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/05099 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2924/00

摘要： The present invention relates to a solder ball for semiconductor packaging and an electronic member having such solder ball. Specifically there are provided: a solder ball capable of ensuring a sufficient thermal fatigue property even when a diameter thereof is not larger than 250 μm as observed in recent years; and an electronic member having such solder ball. More specifically, there are provided: a solder ball for semiconductor packaging that is made of a solder alloy containing Sn as a main element, 0.1-2.5% Ag by mass, 0.1-1.5% Cu by mass and at least one of Mg, Al and Zn in a total amount of 0.0001-0.005% by mass, such solder ball having a surface including a noncrystalline phase that has a thickness of 1-50 nm and contains at least one of Mg, Al and Zn, O and Sn, and an electronic member having such solder ball.

摘要翻译： 本发明涉及一种用于半导体封装的焊球和具有这种焊球的电子部件。 具体地说，提供了一种能够确保近年来观察到的直径不大于250μm时的足够的热疲劳特性的焊球; 以及具有这种焊球的电子部件。 更具体地说，提供一种半导体封装用焊料球，其由以Sn为主要元素的焊料合金制成，质量％为0.1〜2.5质量％，Cu为0.1〜1.5质量％，Mg，Al 和Zn，其总量为0.0001-0.005质量％，这种焊球具有包括厚度为1-50nm并且包含Mg，Al和Zn，O和Sn中的至少一种的非晶相的表面，以及 具有这种焊球的电子部件。

公开(公告)号：US08247911B2

公开(公告)日：2012-08-21

申请号：US12445789

申请日：2008-01-15

申请人： Tomohiro Uno ,  Shinichi Terashima ,  Keiichi Kimura ,  Takashi Yamada ,  Akihito Nishibayashi

发明人： Tomohiro Uno ,  Shinichi Terashima ,  Keiichi Kimura ,  Takashi Yamada ,  Akihito Nishibayashi

IPC分类号： H01L23/488 ,  H01L21/60

CPC分类号： H01L24/78 ,  H01L24/43 ,  H01L24/45 ,  H01L24/48 ,  H01L24/85 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/4312 ,  H01L2224/4321 ,  H01L2224/43821 ,  H01L2224/43825 ,  H01L2224/43826 ,  H01L2224/43848 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/4556 ,  H01L2224/45565 ,  H01L2224/456 ,  H01L2224/45639 ,  H01L2224/45644 ,  H01L2224/45664 ,  H01L2224/45669 ,  H01L2224/45673 ,  H01L2224/48011 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/4845 ,  H01L2224/48624 ,  H01L2224/48639 ,  H01L2224/48644 ,  H01L2224/48647 ,  H01L2224/48655 ,  H01L2224/48664 ,  H01L2224/48699 ,  H01L2224/48724 ,  H01L2224/48739 ,  H01L2224/48744 ,  H01L2224/48747 ,  H01L2224/48755 ,  H01L2224/48764 ,  H01L2224/48839 ,  H01L2224/48844 ,  H01L2224/48847 ,  H01L2224/48855 ,  H01L2224/48864 ,  H01L2224/781 ,  H01L2224/78268 ,  H01L2224/78301 ,  H01L2224/85045 ,  H01L2224/85065 ,  H01L2224/85075 ,  H01L2224/85186 ,  H01L2224/85203 ,  H01L2224/85205 ,  H01L2224/85207 ,  H01L2224/85439 ,  H01L2224/85444 ,  H01L2224/85464 ,  H01L2924/00011 ,  H01L2924/01005 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01057 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01204 ,  H01L2924/01327 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/20751 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/20754 ,  H01L2924/20755 ,  H01L2924/20756 ,  H01L2924/20757 ,  H01L2924/3025 ,  H01L2924/351 ,  H01L2924/01001 ,  H01L2924/20758 ,  H01L2924/20759 ,  H01L2924/2076 ,  H01L2924/20105 ,  H01L2924/20106 ,  H01L2924/20107 ,  H01L2924/20108 ,  H01L2924/00014 ,  H01L2924/00015 ,  H01L2224/45655 ,  H01L2224/45657 ,  H01L2224/45671 ,  H01L2224/45666 ,  H01L2924/20652 ,  H01L2924/20655 ,  H01L2924/00 ,  H01L2224/48824 ,  H01L2924/013 ,  H01L2924/2075 ,  H01L2924/01049 ,  H01L2924/01006

摘要： Provided is a bonding structure of a bonding wire and a method for forming the same which can solve problems of conventional technologies in practical application of a multilayer copper wire, improve the formability and bonding characteristic of a ball portion, improve the bonding strength of wedge connection, and have a superior industrial productivity. A bonding wire mainly composed of copper, and a concentrated layer where the concentration of a conductive metal other than copper is high is formed at a ball bonded portion. The concentrated layer is formed in the vicinity of the ball bonded portion or at the interface thereof. An area where the concentration of the conductive metal is 0.05 to 20 mol % has a thickness greater than or equal to 0.1 μm, and it is preferable that the concentration of the conductive metal in the concentrated layer should be five times as much as the average concentration of the conductive metal at the ball bonded portion other than the concentrated layer.

摘要翻译： 提供一种接合线的接合结构及其形成方法，其可以解决多层铜线的实际应用中的现有技术的问题，提高球部的成形性和接合特性，提高楔连接的接合强度 ，具有较高的工业生产率。 主要由铜构成的接合线以及铜以外的导电性金属的浓度高的浓缩层形成在球接合部。 浓缩层形成在球接合部分附近或其界面处。 导电性金属的浓度为0.05〜20摩尔％的区域的厚度大于等于0.1微米，并且浓缩层中的导电性金属的浓度优选为平均浓度的5倍 导电金属在浓缩层以外的球接合部分的浓度。

公开(公告)号：US08815019B2

公开(公告)日：2014-08-26

申请号：US12993401

申请日：2010-02-12

申请人： Tomohiro Uno ,  Shinichi Terashima ,  Takashi Yamada ,  Ryo Oishi ,  Daizo Oda

发明人： Tomohiro Uno ,  Shinichi Terashima ,  Takashi Yamada ,  Ryo Oishi ,  Daizo Oda

IPC分类号： B23K35/34

CPC分类号： C22C5/02 ,  B32B15/018 ,  C22C5/04 ,  C22C5/06 ,  C22C9/00 ,  C22C21/02 ,  C22C21/12 ,  H01L24/43 ,  H01L24/45 ,  H01L2224/05624 ,  H01L2224/43 ,  H01L2224/43848 ,  H01L2224/43986 ,  H01L2224/45015 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45164 ,  H01L2224/45169 ,  H01L2224/45565 ,  H01L2224/45572 ,  H01L2224/45644 ,  H01L2224/45664 ,  H01L2224/45686 ,  H01L2224/4569 ,  H01L2224/48011 ,  H01L2224/48247 ,  H01L2224/48471 ,  H01L2224/48479 ,  H01L2224/48624 ,  H01L2224/48639 ,  H01L2224/48644 ,  H01L2224/48664 ,  H01L2224/48839 ,  H01L2224/48844 ,  H01L2224/48864 ,  H01L2224/85045 ,  H01L2224/85065 ,  H01L2224/85075 ,  H01L2224/85186 ,  H01L2224/85207 ,  H01L2224/85439 ,  H01L2224/85444 ,  H01L2224/85464 ,  H01L2924/00011 ,  H01L2924/00015 ,  H01L2924/01005 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/20751 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/3025 ,  Y10T428/12222 ,  H01L2924/01001 ,  H01L2924/00014 ,  H01L2924/20754 ,  H01L2924/20105 ,  H01L2924/20106 ,  H01L2924/20107 ,  H01L2924/01202 ,  H01L2924/01007 ,  H01L2924/01205 ,  H01L2224/45639 ,  H01L2224/45669 ,  H01L2224/45655 ,  H01L2224/45657 ,  H01L2224/45671 ,  H01L2224/45666 ,  H01L2924/20656 ,  H01L2924/20652 ,  H01L2924/20645 ,  H01L2924/20654 ,  H01L2924/20655 ,  H01L2924/00 ,  H01L2224/48227 ,  H01L2224/48824 ,  H01L2924/013 ,  H01L2924/20108 ,  H01L2924/20109 ,  H01L2924/2011 ,  H01L2924/20111 ,  H01L2924/00013 ,  H01L2924/01049 ,  H01L2924/01006

摘要： It is an object of the present invention to provide a multilayer wire which can accomplish both ball bonding property and wire workability simultaneously, and which enhances a loop stability, a pull strength, and a wedge bonding property. A semiconductor bonding wire comprises a core member mainly composed of equal to or greater than one kind of following elements: Cu, Au, and Ag, and an outer layer formed on the core member and mainly composed of Pd. A total hydrogen concentration contained in a whole wire is within a range from 0.0001 to 0.008 mass %.

摘要翻译： 本发明的目的是提供一种能够同时实现滚珠接合性能和线加工性的多层线材，并且提高了环路稳定性，拉伸强度和楔形粘合性能。 半导体接合线包括主要由等于或大于一种以下元素构成的芯部件：Cu，Au和Ag，以及形成在芯部件上并主要由Pd构成的外层。 总线中含有的总氢浓度在0.0001〜0.008质量％的范围内。

公开(公告)号：US20130236734A1

公开(公告)日：2013-09-12

申请号：US13885309

申请日：2011-11-16

申请人： Takayuki Kobayashi ,  Shinichi Terashima ,  Masamoto Tanaka ,  Masami Fujishima ,  Masao Kurosaki ,  Jun Maki ,  Hideaki Suda ,  Shuji Nagasaki

发明人： Takayuki Kobayashi ,  Shinichi Terashima ,  Masamoto Tanaka ,  Masami Fujishima ,  Masao Kurosaki ,  Jun Maki ,  Hideaki Suda ,  Shuji Nagasaki

IPC分类号： B32B15/01 ,  B21D39/00

CPC分类号： B32B15/012 ,  B21D39/00 ,  C22C1/02 ,  C23C2/02 ,  C23C2/12 ,  C23C2/26 ,  C23C2/28 ,  C23C28/023 ,  H01L31/03926 ,  H01L31/03928 ,  Y02E10/541 ,  Y10T428/12049 ,  Y10T428/12069 ,  Y10T428/12076

摘要： A metal foil including: a steel layer whose thickness is 10 to 200 μm; an Al-containing metal layer arranged on the steel layer; and plural granular alloys which exist in an interface between the steel layer and the Al-containing metal layer, wherein, when a cutting-plane line of a surface of the Al-containing metal layer is defined as a contour curve and an approximation straight line of the contour curve is defined as a contour average straight line, a maximum point, whose distance from the contour average straight line is more than 10 μm, is absent on the contour curve, and wherein, when an equivalent sphere diameter of the granular alloys is x in units of μm and a thickness of the Al-containing metal layer is T in units of μm, the granular alloys satisfy x≦0.5T.

摘要翻译： 一种金属箔，包括：厚度为10〜200μm的钢层; 设置在钢层上的含Al金属层; 以及存在于钢层和含Al金属层之间的界面中的多个粒状合金，其中，当含Al金属层的表面的切割线被定义为轮廓曲线和近似直线时 轮廓曲线被定义为轮廓平均直线，在轮廓曲线上不存在与轮廓平均直线的距离大于10um的最大点，并且其中，当粒状合金的等效球体直径 以x为单位，m为单位，含有Al的金属层的厚度为T为单位为m，粒状合金满足x@0.5T。

公开(公告)号：US20090072399A1

公开(公告)日：2009-03-19

申请号：US12146792

申请日：2008-06-26

申请人： Shinichi Terashima ,  Tomohiro Uno ,  Kohei Tatsumi ,  Takashi Yamada ,  Atsuo Ikeda ,  Daizo Oda

发明人： Shinichi Terashima ,  Tomohiro Uno ,  Kohei Tatsumi ,  Takashi Yamada ,  Atsuo Ikeda ,  Daizo Oda

IPC分类号： H01L23/49

CPC分类号： H01L24/85 ,  H01L24/05 ,  H01L24/43 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/04042 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05664 ,  H01L2224/43 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/48247 ,  H01L2224/48471 ,  H01L2224/48624 ,  H01L2224/48639 ,  H01L2224/48664 ,  H01L2224/48724 ,  H01L2224/48739 ,  H01L2224/48764 ,  H01L2224/85205 ,  H01L2224/85439 ,  H01L2224/85464 ,  H01L2224/859 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01007 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01016 ,  H01L2924/01018 ,  H01L2924/0102 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01057 ,  H01L2924/01059 ,  H01L2924/01072 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01204 ,  H01L2924/10253 ,  H01L2924/20105 ,  H01L2924/20106 ,  H01L2924/20107 ,  H01L2924/20108 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/20754 ,  H01L2924/20755 ,  H01L2924/01013 ,  H01L2924/01004 ,  H01L2924/01026 ,  H01L2924/00 ,  H01L2224/48227 ,  H01L2924/01025 ,  H01L2924/013 ,  H01L2924/20759 ,  H01L2924/2076 ,  H01L2924/00015 ,  H01L2924/2075 ,  H01L2924/00013 ,  H01L2924/01006 ,  H01L2224/4554

摘要： There is provided a bonding wire which does not cause a leaning failure or the like. A semiconductor mounting bonding wire has a breaking elongation of 7 to 20%, and stress at 1% elongation is greater than or equal to 90% of a tensile strength and is less than or equal to 100% thereof.

摘要翻译： 提供了不会引起倾斜故障等的接合线。 半导体安装接合线的断裂伸长率为7〜20％，伸长率为1％的应力为拉伸强度的90％以上且小于等于100％。

公开(公告)号：US07390370B2

公开(公告)日：2008-06-24

申请号：US10502676

申请日：2003-10-03

申请人： Tomohiro Uno ,  Shinichi Terashima ,  Kohei Tatsumi

发明人： Tomohiro Uno ,  Shinichi Terashima ,  Kohei Tatsumi

IPC分类号： C22C5/02

CPC分类号： C22C5/02 ,  H01L24/43 ,  H01L24/45 ,  H01L2224/05624 ,  H01L2224/4321 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/4851 ,  H01L2224/48624 ,  H01L2924/00011 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/0102 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01052 ,  H01L2924/01057 ,  H01L2924/01058 ,  H01L2924/0106 ,  H01L2924/01061 ,  H01L2924/01063 ,  H01L2924/01064 ,  H01L2924/01065 ,  H01L2924/01066 ,  H01L2924/0107 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01088 ,  H01L2924/01204 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/1433 ,  H01L2924/181 ,  H01L2924/20751 ,  H01L2924/20752 ,  Y10T428/2913 ,  H01L2924/01039 ,  H01L2924/01049 ,  H01L2924/01004 ,  H01L2924/01203 ,  H01L2924/00 ,  H01L2924/013 ,  H01L2924/01006

摘要： Gold bonding wires for semiconductor devices featuring increased strength and modulus of elasticity, stable loop shapes, suppressing the flow of wires, suppressing the leaning, and totally improved junctions of the wedge junction portions or wear characteristics for realizing a narrow-pitch connection, and enhanced the productivity on an industrial scale, and a method of producing the same. A gold bonding wire for a semiconductor device has a crystal grain structure in cross section in the lengthwise direction of the bonding wire, wherein a ratio of the area of crystal grains having an orientation [111] to the area of crystal grains having an orientation [100] is not smaller than 1.2 in the crystal orientations in the lengthwise direction of the wire.

摘要翻译： 用于半导体器件的金键合线具有增强的强度和弹性模量，稳定的环形形状，抑制线的流动，抑制倾斜，并且完全改善楔形接合部分的接合部或用于实现窄节距连接的磨损特性，并且增强 工业规模的生产率及其制造方法。 用于半导体器件的金键合线在接合线的长度方向具有截面的晶粒结构，其中具有取向[111]的晶粒面积与具有取向的晶粒面积的比例[ 100]在线的长度方向上的晶体取向不小于1.2。

公开(公告)号：US20050000755A1

公开(公告)日：2005-01-06

申请号：US10809810

申请日：2004-03-26

申请人： Hiroshi Ikegami ,  Hiroyasu Ishikawa ,  Minoru Mashiko ,  Hitoshi Furukawa ,  Yukimasa Mitsude ,  Shinichi Terashima

发明人： Hiroshi Ikegami ,  Hiroyasu Ishikawa ,  Minoru Mashiko ,  Hitoshi Furukawa ,  Yukimasa Mitsude ,  Shinichi Terashima

IPC分类号： A61G5/10 ,  B60T11/04 ,  B62B5/04 ,  B62L5/00 ,  F16D71/00

CPC分类号： B60T11/046

摘要： An operating apparatus 1100 of a brake apparatus 1001 for restricting rotation of a brake drum 1003 including an operating lever 1112 and an operation restricting portion 1120 is provided. The operating lever 1112 is supported to be able to operate in a movable range. The movable range includes: a brake release mode permitting rotation of the brake drum 1003 both in regular rotation and reverse rotation; and an auxiliary brake mode restricting only reverse rotation of the brake drum. The operating lever 1112 is urged in a direction reaching the auxiliary brake mode from the brake release mode in a normal state. The operation restricting portion 1120 restricts a movement of the operating lever 1112 reaching the auxiliary brake mode by being brought into contact with the operating lever 1112 in the brake release mode.

摘要翻译： 提供了用于限制包括操作杆1112和操作限制部分1120的制动鼓1003的旋转的制动装置1001的操作装置1100。 操作杆1112被支撑以能够在可移动范围内操作。 可移动范围包括：制动释放模式，允许制动鼓1003在正常旋转和反向旋转中旋转; 以及限制制动鼓的反向旋转的辅助制动模式。 在正常状态下，操作杆1112从制动解除模式向着辅助制动模式的方向被推压。 操作限制部1120通过在制动解除模式下与操作杆1112接触来限制操作杆1112到达辅助制动模式的移动。

公开(公告)号：US09902134B2

公开(公告)日：2018-02-27

申请号：US13885309

申请日：2011-11-16

申请人： Takayuki Kobayashi ,  Shinichi Terashima ,  Masamoto Tanaka ,  Masami Fujishima ,  Masao Kurosaki ,  Jun Maki ,  Hideaki Suda ,  Shuji Nagasaki

发明人： Takayuki Kobayashi ,  Shinichi Terashima ,  Masamoto Tanaka ,  Masami Fujishima ,  Masao Kurosaki ,  Jun Maki ,  Hideaki Suda ,  Shuji Nagasaki

IPC分类号： B32B15/01 ,  C23C2/02 ,  C23C2/12 ,  C23C2/28 ,  B21D39/00 ,  C23C28/02 ,  H01L31/0392 ,  C23C2/26 ,  C22C1/02

CPC分类号： B32B15/012 ,  B21D39/00 ,  C22C1/02 ,  C23C2/02 ,  C23C2/12 ,  C23C2/26 ,  C23C2/28 ,  C23C28/023 ,  H01L31/03926 ,  H01L31/03928 ,  Y02E10/541 ,  Y10T428/12049 ,  Y10T428/12069 ,  Y10T428/12076

摘要： A metal foil including: a steel layer whose thickness is 10 to 200 μm; an Al-containing metal layer arranged on the steel layer; and plural granular alloys which exist in an interface between the steel layer and the Al-containing metal layer, wherein, when a cutting-plane line of a surface of the Al-containing metal layer is defined as a contour curve and an approximation straight line of the contour curve is defined as a contour average straight line, a maximum point, whose distance from the contour average straight line is more than 10 μm, is absent on the contour curve, and wherein, when an equivalent sphere diameter of the granular alloys is x in units of μm and a thickness of the Al-containing metal layer is T in units of μm, the granular alloys satisfy x≦0.5T.