公开(公告)号：US08518745B2

公开(公告)日：2013-08-27

申请号：US13396554

申请日：2012-02-14

申请人： Takashi Oda ,  Naohide Takamoto ,  Takeshi Matsumura

发明人： Takashi Oda ,  Naohide Takamoto ,  Takeshi Matsumura

IPC分类号： H01L21/00

CPC分类号： H01L23/293 ,  H01L21/568 ,  H01L21/6836 ,  H01L23/3157 ,  H01L24/10 ,  H01L24/81 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68363 ,  H01L2221/68377 ,  H01L2224/10126 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/81191 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01051 ,  H01L2924/01056 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/15787 ,  H01L2924/351 ,  H01L2924/00

摘要： A method of manufacturing a semiconductor device is provided. The method includes the steps of pasting a film for forming a protective layer in which a support base, an adhesive layer, and a thermosetting resin layer are laminated, in that order, onto a bumped wafer in which a low dielectric material layer is formed, with the thermosetting resin layer serving as a pasting surface, and further, peeling the support base and the adhesive layer from the thermosetting resin layer, forming a protective layer by thermally curing the thermosetting resin layer, and dicing the bumped wafer and the protective layer together.

摘要翻译： 提供一种制造半导体器件的方法。 该方法包括以下步骤：将形成保护层的膜，其中将支撑基底，粘合剂层和热固性树脂层按顺序粘合到形成有低介电材料层的凸起的晶片上， 将热固性树脂层用作糊状表面，并且进一步从热固性树脂层剥离支撑基底和粘合剂层，通过热固化热固性树脂层形成保护层，并将凸起的晶片和保护层一起切割 。

公开(公告)号：US20120208009A1

公开(公告)日：2012-08-16

申请号：US13396532

申请日：2012-02-14

申请人： Takashi Oda ,  Naohide Takamoto ,  Takeshi Matsumura

发明人： Takashi Oda ,  Naohide Takamoto ,  Takeshi Matsumura

IPC分类号： B32B3/00 ,  B32B27/38

CPC分类号： C09D171/08 ,  H01L21/78 ,  H01L23/3114 ,  H01L23/3164 ,  H01L23/562 ,  H01L2924/0002 ,  Y10T428/265 ,  Y10T428/31511 ,  H01L2924/00

摘要： The present invention aims to provide a film for forming a protective layer that is capable of preventing cracks in a low dielectric material layer of a semiconductor wafer while suppressing an increase in the number of steps in the manufacture of a semiconductor device. This object is achieved by a film for forming a protective layer on a bumped wafer in which a low dielectric material layer is formed, including a support base, an adhesive layer, and a thermosetting resin layer, laminated in this order, wherein the melt viscosity of the thermosetting resin layer is 1×102 Pa·S or more and 2×104 Pa·S or less, and the shear modulus of the adhesive layer is 1×103 Pa or more and 2×106 Pa or less, when the thermosetting resin layer has a temperature in a range of 50 to 120° C.

摘要翻译： 本发明的目的在于提供一种形成保护层的膜，其能够防止半导体晶片的低电介质材料层中的裂纹，同时抑制半导体器件的制造中的步骤数量的增加。 该目的通过在其上形成低介电材料层的凸起晶片上形成保护层的膜来实现，该薄膜包括依次层叠的支撑基底，粘合层和热固性树脂层，其中熔体粘度 的热固性树脂层的摩尔比为1×102Pa·S以上且2×104Pa·S以下，粘合剂层的剪切模量为1×10 3 Pa以上2×10 6 Pa以下时， 树脂层的温度为50〜120℃。

公开(公告)号：US20120208350A1

公开(公告)日：2012-08-16

申请号：US13396554

申请日：2012-02-14

申请人： Takashi Oda ,  Naohide Takamoto ,  Takeshi Matsumura

发明人： Takashi Oda ,  Naohide Takamoto ,  Takeshi Matsumura

IPC分类号： H01L21/78

CPC分类号： H01L23/293 ,  H01L21/568 ,  H01L21/6836 ,  H01L23/3157 ,  H01L24/10 ,  H01L24/81 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68363 ,  H01L2221/68377 ,  H01L2224/10126 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/81191 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01051 ,  H01L2924/01056 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/15787 ,  H01L2924/351 ,  H01L2924/00

摘要： The present invention aims to provide a method of manufacturing a semiconductor device that is capable of preventing cracks in a low dielectric material layer of a semiconductor wafer, while also suppressing an increase in the number of steps in the manufacturing process. This object is achieved by a method of manufacturing a semiconductor device including the steps of pasting a film for forming a protective layer in which a support base, an adhesive layer, and a thermosetting resin layer are laminated, in that order, onto a bumped wafer in which a low dielectric material layer is formed, with the thermosetting resin layer serving as a pasting surface, and further, peeling the support base and the adhesive layer from the thermosetting resin layer, forming a protective layer by thermally curing the thermosetting resin layer, and dicing the bumped wafer and the protective layer together.

摘要翻译： 本发明的目的在于提供一种能够防止半导体晶片的低电介质材料层中的裂纹的半导体器件的制造方法，同时也抑制了制造工序中的工序数量的增加。 该目的通过一种制造半导体器件的方法来实现，该半导体器件包括以下步骤：将用于形成保护层的膜，其中将支撑基底，粘合剂层和热固性树脂层按顺序粘贴到凸起的晶片上 其中形成低介电材料层，热固性树脂层用作糊化表面，此外，从热固性树脂层剥离支撑基底和粘合剂层，通过热固化热固性树脂层形成保护层， 并将凸起的晶片和保护层切割在一起。

公开(公告)号：US08704382B2

公开(公告)日：2014-04-22

申请号：US12975893

申请日：2010-12-22

申请人： Naohide Takamoto ,  Takeshi Matsumura ,  Goji Shiga

发明人： Naohide Takamoto ,  Takeshi Matsumura ,  Goji Shiga

IPC分类号： H01L23/48 ,  H01L21/44

CPC分类号： H01L21/6836 ,  H01L21/561 ,  H01L23/3164 ,  H01L23/544 ,  H01L24/81 ,  H01L2221/68327 ,  H01L2221/68377 ,  H01L2224/13111 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/16225 ,  H01L2224/73204 ,  H01L2224/8101 ,  H01L2224/81193 ,  H01L2224/81203 ,  H01L2224/814 ,  H01L2224/831 ,  H01L2924/01004 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01025 ,  H01L2924/01046 ,  H01L2924/01079 ,  H01L2924/3025 ,  Y10T428/28 ,  H01L2924/014 ,  H01L2924/01082 ,  H01L2924/01047 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01083 ,  H01L2924/00014 ,  H01L2924/00

摘要： The present invention provides a film for flip chip type semiconductor back surface, which is to be formed on a back surface of a semiconductor element flip-chip connected on an adherend, the film including a wafer adhesion layer and a laser marking layer, in which the wafer adhesion layer has a light transmittance of 40% or more in terms of a light having a wavelength of 532 nm and the laser marking layer has a light transmittance of less than 40% in terms of a light having a wavelength of 532 nm.

摘要翻译： 本发明提供了一种用于倒装芯片型半导体背表面的薄膜，其将形成在连接在被粘物上的半导体元件倒装芯片的背面上，该薄膜包括晶片粘合层和激光标记层，其中 晶片粘合层的波长为532nm的光的透光率为40％以上，激光标记层的波长为532nm的光的透光率为40％以下。

公开(公告)号：US08692389B2

公开(公告)日：2014-04-08

申请号：US12976112

申请日：2010-12-22

申请人： Naohide Takamoto ,  Takeshi Matsumura ,  Goji Shiga

发明人： Naohide Takamoto ,  Takeshi Matsumura ,  Goji Shiga

IPC分类号： H01L23/48 ,  H01L21/44

CPC分类号： H01L23/562 ,  H01L21/6836 ,  H01L21/78 ,  H01L23/3164 ,  H01L23/544 ,  H01L24/13 ,  H01L24/16 ,  H01L24/27 ,  H01L24/81 ,  H01L2221/68377 ,  H01L2224/13111 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/16221 ,  H01L2224/274 ,  H01L2224/73204 ,  H01L2224/81007 ,  H01L2224/81097 ,  H01L2224/81193 ,  H01L2224/814 ,  H01L2224/81815 ,  H01L2224/831 ,  H01L2924/01004 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01025 ,  H01L2924/01029 ,  H01L2924/01046 ,  H01L2924/01079 ,  H01L2924/12042 ,  H01L2924/15787 ,  H01L2924/15788 ,  H01L2924/3025 ,  Y10T428/1476 ,  Y10T428/28 ,  H01L2924/01082 ,  H01L2924/01047 ,  H01L2924/0103 ,  H01L2924/01083 ,  H01L2924/00014 ,  H01L2924/014 ,  H01L2924/3512 ,  H01L2924/00

摘要： The present invention provides a dicing tape-integrated film for semiconductor back surface, which includes: a dicing tape including a base material and a pressure-sensitive adhesive layer provided on the base material; and a film for flip chip type semiconductor back surface provided on the pressure-sensitive adhesive layer, in which a peel force (temperature: 23° C., peeling angle: 180°, tensile rate: 300 mm/min) between the pressure-sensitive adhesive layer of the dicing tape and the film for flip chip type semiconductor back surface is from 0.05 N/20 mm to 1.5 N/20 mm.

摘要翻译： 本发明提供一种半导体背面用切割带一体膜，其特征在于，包括：基材的切割带和设置在基材上的粘合剂层; 以及设置在压敏粘合剂层上的倒装芯片型半导体背面的膜，其中压敏粘合剂层之间的剥离力（温度：23℃，剥离角度：180°，拉伸速度：300mm / min） 切割带的粘合剂层和倒装芯片型半导体背面的膜的厚度为0.05N / 20mm至1.5N / 20mm。

公开(公告)号：US08237294B2

公开(公告)日：2012-08-07

申请号：US12696135

申请日：2010-01-29

申请人： Naohide Takamoto ,  Takeshi Matsumura

发明人： Naohide Takamoto ,  Takeshi Matsumura

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L21/6836 ,  H01L23/544 ,  H01L23/562 ,  H01L24/81 ,  H01L2221/68327 ,  H01L2223/5448 ,  H01L2224/16 ,  H01L2224/27436 ,  H01L2224/81801 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01025 ,  H01L2924/01046 ,  H01L2924/01079 ,  H01L2924/12042 ,  Y10T428/1467 ,  Y10T428/28 ,  Y10T428/2848 ,  Y10T428/31511 ,  H01L2924/00 ,  H01L2224/0401

摘要： The present invention provides a dicing tape-integrated wafer back surface protective film including: a dicing tape including a base material and a pressure-sensitive adhesive layer formed on the base material; and a wafer back surface protective film formed on the pressure-sensitive adhesive layer of the dicing tape, in which the wafer back surface protective film is colored. It is preferable that the colored wafer back surface protective film has a laser marking ability. The dicing tape-integrated wafer back surface protective film can be suitably used for a flip chip-mounted semiconductor device.

摘要翻译： 本发明提供一种切片带集成晶片背面保护膜，其包括：切割带，其包括基材和形成在基材上的压敏粘合剂层; 以及形成在切割带的压敏粘合剂层上的晶片背面保护膜，其中晶片背面保护膜着色。 彩色晶片背面保护膜最好具有激光打标能力。 切割带集成的晶片背面保护膜可以适用于倒装芯片安装的半导体器件。

公开(公告)号：US08698324B2

公开(公告)日：2014-04-15

申请号：US12975641

申请日：2010-12-22

申请人： Naohide Takamoto ,  Takeshi Matsumura ,  Goji Shiga

发明人： Naohide Takamoto ,  Takeshi Matsumura ,  Goji Shiga

IPC分类号： H01L23/48 ,  H01L21/50

摘要： The present invention provides a dicing tape-integrated film for semiconductor back surface, which includes: a dicing tape including a base material and a pressure-sensitive adhesive layer provided on the base material; and a film for flip chip type semiconductor back surface provided on the pressure-sensitive adhesive layer, in which the film for flip chip type semiconductor back surface contains a black pigment.

公开(公告)号：US07611926B2

公开(公告)日：2009-11-03

申请号：US12040775

申请日：2008-02-29

申请人： Naohide Takamoto ,  Sadahito Misumi ,  Takeshi Matsumura ,  Yasuhiro Amano ,  Masami Oikawa ,  Tsubasa Miki

发明人： Naohide Takamoto ,  Sadahito Misumi ,  Takeshi Matsumura ,  Yasuhiro Amano ,  Masami Oikawa ,  Tsubasa Miki

IPC分类号： H01L21/58 ,  H01L23/14

CPC分类号： H01L24/83 ,  H01L21/6836 ,  H01L23/3121 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/85 ,  H01L25/0657 ,  H01L2221/68327 ,  H01L2224/05599 ,  H01L2224/274 ,  H01L2224/2919 ,  H01L2224/29198 ,  H01L2224/2929 ,  H01L2224/293 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/83191 ,  H01L2224/83192 ,  H01L2224/83855 ,  H01L2224/83885 ,  H01L2224/85001 ,  H01L2224/85099 ,  H01L2224/85205 ,  H01L2224/85399 ,  H01L2225/0651 ,  H01L2225/06575 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01056 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/07802 ,  H01L2924/10253 ,  H01L2924/15747 ,  H01L2924/15788 ,  H01L2924/181 ,  H01L2924/20102 ,  H01L2924/20103 ,  H01L2924/20104 ,  H01L2924/20105 ,  H01L2924/20106 ,  H01L2924/20107 ,  H01L2924/0635 ,  H01L2224/78 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2924/00012

摘要： The thermosetting die bonding film of the invention is a thermosetting die bonding film used to produce a semiconductor device, which contains, as main components, 5 to 15% by weight of a thermoplastic resin component and 45 to 55% by weight of a thermosetting resin component, and has a melt viscosity of 400 Pa·s or more and 2500 Pa·s or less at 100° C. before the film is thermally set.

摘要翻译： 本发明的热固性芯片接合薄膜是用于制造半导体器件的热固性芯片接合薄膜，其以主要成分为5〜15重量％的热塑性树脂成分和45〜55重量％的热硬化性树脂 并且在热固化膜之前，在100℃下具有400Pa.s以上且2500Pa·s以下的熔融粘度。

公开(公告)号：US08558397B2

公开(公告)日：2013-10-15

申请号：US13534269

申请日：2012-06-27

申请人： Naohide Takamoto ,  Takeshi Matsumura

发明人： Naohide Takamoto ,  Takeshi Matsumura

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L21/6836 ,  H01L23/544 ,  H01L23/562 ,  H01L24/81 ,  H01L2221/68327 ,  H01L2223/5448 ,  H01L2224/16 ,  H01L2224/27436 ,  H01L2224/81801 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01025 ,  H01L2924/01046 ,  H01L2924/01079 ,  H01L2924/12042 ,  Y10T428/1467 ,  Y10T428/28 ,  Y10T428/2848 ,  Y10T428/31511 ,  H01L2924/00 ,  H01L2224/0401

摘要： The present invention provides a dicing tape-integrated wafer back surface protective film including: a dicing tape including a base material and a pressure-sensitive adhesive layer formed on the base material; and a wafer back surface protective film formed on the pressure-sensitive adhesive layer of the dicing tape, in which the wafer back surface protective film is colored. It is preferable that the colored wafer back surface protective film has a laser marking ability. The dicing tape-integrated wafer back surface protective film can be suitably used for a flip chip-mounted semiconductor device.

摘要翻译： 本发明提供一种切片带集成晶片背面保护膜，其包括：切割带，其包括基材和形成在基材上的压敏粘合剂层; 以及形成在切割带的压敏粘合剂层上的晶片背面保护膜，其中晶片背面保护膜着色。 彩色晶片背面保护膜最好具有激光打标能力。 切割带集成的晶片背面保护膜可以适用于倒装芯片安装的半导体器件。

公开(公告)号：US20100236689A1

公开(公告)日：2010-09-23

申请号：US12675433

申请日：2008-08-26

申请人： Yasuhiro Amano ,  Sadahito Misumi ,  Takeshi Matsumura ,  Naohide Takamoto

发明人： Yasuhiro Amano ,  Sadahito Misumi ,  Takeshi Matsumura ,  Naohide Takamoto

IPC分类号： C09J7/00 ,  B32B37/12

CPC分类号： C09J133/08 ,  C09J7/35 ,  C09J7/385 ,  C09J11/04 ,  H01L23/24 ,  H01L23/3121 ,  H01L24/29 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/83 ,  H01L2224/92247 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01056 ,  H01L2924/01057 ,  H01L2924/01077 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/15747 ,  H01L2924/15788 ,  H01L2924/181 ,  Y10T156/10 ,  Y10T428/249921 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2924/3512

摘要： The present invention provides an adhesive sheet for manufacturing a semiconductor device, which, even when the adhesive sheet is made thin, makes it possible to easily identify the presence or absence of the adhesive sheet, thereby decreasing down time for the manufacturing apparatus and enabling an improvement of the yield, and to provide a semiconductor device manufacturing method using the sheet. The present invention relates to an adhesive sheet for manufacturing a semiconductor device which is used to adhere a semiconductor element to an adherend, wherein the adhesive sheet contains a pigment which adsorbs or reflects light having a wavelength in a range from 290 to 450 nm.

摘要翻译： 本发明提供一种用于制造半导体器件的粘合片，即使当粘合片变薄时，也可以容易地识别粘合片的存在或不存在，从而减少制造装置的停留时间并使得能够 提高产量，并提供使用该片材的半导体器件制造方法。 本发明涉及一种用于制造用于将半导体元件粘合到被粘物上的半导体器件的粘合片，其中该粘合片含有吸收或反射波长在290至450nm范围内的光的颜料。