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1.发明授权Method and apparatus using a pre-patterned seed layer for providing an aligned coil for an inductive head structure 失效使用预图案种子层的方法和装置，用于提供用于感应头部结构的对准线圈公开(公告)号：US07117583B2
公开(公告)日：2006-10-10
申请号：US10101196
申请日：2002-03-18
CPC分类号： G11B5/486 , G11B5/17 , G11B5/313 , G11B5/3163 , G11B5/3967 , H01F17/0006 , H01F41/043 , H01F41/046 , Y10T29/4902 , Y10T29/4906 , Y10T29/49062 , Y10T29/49064 , Y10T29/49073
摘要： A method and apparatus using a pre-patterned seed layer for providing an aligned coil for an inductive head structure. The method uses an aligned process where the base plate imprint is fabricated on an electrically insulating layer and the reversed image is fabricated and etched into the coil insulation material, e.g., hard bake photoresist to alleviate the problems associated with complete ion removal of the seed layer between high aspect ratio coils. The method would also not be prone to plating non-uniformities (voids), and would not be subject to seed layer undercutting in a wet etch step process.
摘要翻译： 一种使用预先图案化种子层来提供用于感应头部结构的对准线圈的方法和装置。 该方法使用对准的工艺，其中基板印版制造在电绝缘层上，并且反转的图像被制造并蚀刻到线圈绝缘材料中，例如硬烘烤光致抗蚀剂以减轻与种子层的完全离子去除相关的问题 在高纵横比线圈之间。 该方法也不易于电镀不均匀（空隙），并且在湿法蚀刻步骤中不会经受种子层底切。
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2.发明授权High aspect ratio co-planar structure fabrication consisting of different materials 有权高纵横比共面结构制造由不同材料组成公开(公告)号：US07280313B2
公开(公告)日：2007-10-09
申请号：US10837386
申请日：2004-04-30
CPC分类号： G11B5/3163 , Y10T29/49052 , Y10T29/4906 , Y10T29/49064
摘要： A a method for fabricating a structure, such as a magnetic head, having two coplanar metallic features of different compositions, both deposited on their own seed layers. The features may be made tall relative to their widths (ie. have a high aspect ratio), and are also very closely spaced. Only a single high-definition, critically aligned photolithographic procedure is used to create the critical structures, avoiding any problem with aligning features produced by multiple procedures. The method is applied to the production of the write structure of a magnetic read/write head, where a portion of the pole structure and the inductive coils are fabricated in the same plane with a close spacing and both having a vertical aspect ratio of more than about 2:1.
摘要翻译： 一种用于制造具有不同组成的两个共面金属特征的结构（例如磁头）的方法，两者都沉积在它们自己的种子层上。 特征可以相对于它们的宽度（即，具有高纵横比）而高，并且也非常紧密地间隔开。 仅使用单一的高清晰度，严格对准的光刻过程来创建关键结构，避免了由多个过程产生的对准特征的任何问题。 该方法被应用于磁读/写头的写结构的制造，其中极结构和感应线圈的一部分以相近的间距制造在相同的平面中，并且两者的垂直纵横比大于 约2：1。
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3.发明授权公开(公告)号：US07248434B2
公开(公告)日：2007-07-24
申请号：US10798163
申请日：2004-03-10
IPC分类号： G11B5/147
CPC分类号： G11B5/3116 , G11B5/1278 , G11B5/3163 , G11B5/3967 , Y10T29/49032
摘要： A method for manufacturing a pole tip structure for a magnetic head is provided. An etch stop layer is initially deposited after which a transfer layer is deposited. Further deposited is at least one masking layer. Reactive ion etching is then performed to define a trench in at least the transfer layer. A pole tip layer is then deposited in the trench to define a pole tip structure flanked at least in part by the transfer layer. A surface of the transfer layer or etch stop layer then remains in co-planar relationship with a surface of the pole tip structure.
摘要翻译： 提供一种用于制造用于磁头的极尖结构的方法。 最初沉积蚀刻停止层，之后沉积转移层。 进一步沉积的是至少一个掩模层。 然后执行反应离子蚀刻以在至少转移层中限定沟槽。 然后将极尖层沉积在沟槽中以限定至少部分地由转移层侧面的极尖结构。 然后转印层或蚀刻停止层的表面与极尖结构的表面保持共面关系。
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4.发明授权Method of making a perpendicular recording magnetic head pole tip with an etchable adhesion CMP stop layer 失效制造具有可蚀刻粘合CMP停止层的垂直记录磁头极尖的方法公开(公告)号：US07024756B2
公开(公告)日：2006-04-11
申请号：US10631706
申请日：2003-07-30
申请人： Quang Le , Jui-lung Li , Jeffrey S. Lille , Son Van Nguyen
发明人： Quang Le , Jui-lung Li , Jeffrey S. Lille , Son Van Nguyen
CPC分类号： G11B5/1278 , G11B5/3106 , Y10T29/49041 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： The method of making a magnetic head assembly includes forming a second pole piece layer that is recessed from a head surface, forming a reactive ion etchable (RIEable) pole tip forming layer on the second pole piece layer, forming an adhesion/stop layer of tantalum (Ta) on the pole tip forming layer, forming a photoresist mask on the adhesion/stop layer with an opening for patterning the adhesion/stop layer and the pole tip forming layer with another opening, reactive ion etching (RIE) through the opening to form the other opening, forming the second pole piece pole tip in the other opening with a top which is above a top of the adhesion/stop layer and chemical mechanical polishing (CMP) the top of the second pole piece pole tip until the CMP contacts the adhesion/stop layer. The invention also includes the magnetic head made by such a process.
摘要翻译： 制造磁头组件的方法包括形成从头表面凹陷的第二极片层，在第二极片层上形成反应离子可蚀刻（可分离）极尖端形成层，形成钽的粘附/停止层 （Ta），在粘合/停止层上形成光刻胶掩模，其中具有用于使粘附/阻挡层和极尖形成层图案化的开口具有另一个开口，反应离子蚀刻（RIE）通过开口至 形成另一个开口，在另一个开口中形成具有位于粘附/停止层顶部之上的顶部的第二极靴极尖，并且在第二极片极尖的顶部进行化学机械抛光（CMP），直到CMP接触 粘附/停止层。 本发明还包括由这种方法制成的磁头。
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公开(公告)号：US06664026B2
公开(公告)日：2003-12-16
申请号：US09815540
申请日：2001-03-22
IPC分类号： G03F700
CPC分类号： G03F7/094 , G03F7/40 , G11B5/17 , G11B5/3116 , G11B5/3163 , H01L21/0332 , H01L21/042
摘要： An etch barrier to be used in a photolithograph process is disclosed. A silicon rich etch barrier is deposited on a substrate using a low energy deposition technique. A diamond like carbon layer is deposited on the silicon rich etch barrier. Photoresist is then placed on this etch barrier DLC combination. To form photolithographic features, successive steps of oxygen and flourine reactive ion etching is used.
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6.发明授权公开(公告)号：US08476743B2
公开(公告)日：2013-07-02
申请号：US13228857
申请日：2011-09-09
CPC分类号： H01L21/02112 , H01B3/12 , H01L21/02274 , H01L21/02318 , H01L21/02348 , H01L21/02351 , H01L21/76825 , H01L21/76826 , H01L21/76828 , H01L21/76829 , H01L21/76832 , H01L21/76834 , H01L23/53252 , H01L23/53276 , H01L29/1054 , H01L29/1606 , H01L29/456 , H01L29/4908 , H01L29/4983 , H01L29/78648 , H01L2924/0002 , H01L2924/00
摘要： A carbon-rich carbon boron nitride dielectric film having a dielectric constant of equal to, or less than 3.6 is provided that can be used as a component in various electronic devices. The carbon-rich carbon boron nitride dielectric film has a formula of CxByNz wherein x is 35 atomic percent or greater, y is from 6 atomic percent to 32 atomic percent and z is from 8 atomic percent to 33 atomic percent.
摘要翻译： 提供具有等于或小于3.6的介电常数的富碳碳氮化硼介电膜，其可用作各种电子器件中的组分。 富碳碳氮化硼电介质膜具有C x B y N z的化学式，其中x为35原子％以上，y为6原子％〜32原子％，z为8原子％〜33原子％。
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7.发明申请SELF-ALIGNED COMPOSITE M-MOx/DIELECTRIC CAP FOR Cu INTERCONNECT STRUCTURES 有权用于Cu互连结构的自对准复合材料M-MOx /电介质盖公开(公告)号：US20120175023A1
公开(公告)日：2012-07-12
申请号：US13420728
申请日：2012-03-15
CPC分类号： H01L21/76849 , H01L21/76846 , H01L21/76864 , H01L21/76867
摘要： An interconnect structure is provided that has improved electromigration resistance as well as methods of forming such an interconnect structure. The interconnect structure includes a composite M-MOx cap located at least on the upper surface of the Cu-containing material within the at least one opening. The composite M-MOx cap includes an upper region that is composed of the metal having a higher affinity for oxygen than copper and copper oxide and a lower region that is composed of a non-stoichiometric oxide of said metal.
摘要翻译： 提供了具有改进的电迁移阻力的互连结构以及形成这种互连结构的方法。 互连结构包括至少位于至少一个开口内的含Cu材料的上表面上的复合M-MOx帽。 复合M-MOx帽包括由与氧和氧化铜相比具有比氧更高的亲和性的金属构成的上部区域和由所述金属的非化学计量氧化物构成的下部区域。
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公开(公告)号：US07960294B2
公开(公告)日：2011-06-14
申请号：US12506954
申请日：2009-07-21
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/76835 , C23C16/0272 , C23C16/30 , C23C16/325 , C23C16/505 , C23C16/56 , H01L21/02126 , H01L21/02167 , H01L21/022 , H01L21/02203 , H01L21/02211 , H01L21/02274 , H01L21/0228 , H01L21/02304 , H01L21/0234 , H01L21/02351 , H01L21/3105 , H01L21/31058 , H01L21/3121 , H01L21/3148 , H01L21/31633 , H01L21/76801 , H01L21/7681 , H01L21/76825 , H01L21/76826 , H01L21/76829 , H01L21/76832
摘要： Methods are provided for processing a substrate for depositing an adhesion layer having a low dielectric constant between two low k dielectric layers. In one aspect, the invention provides a method for processing a substrate including depositing a barrier layer on the substrate, wherein the barrier layer comprises silicon and carbon and has a dielectric constant less than 4, depositing a dielectric initiation layer adjacent the barrier layer, and depositing a first dielectric layer adjacent the dielectric initiation layer, wherein the dielectric layer comprises silicon, oxygen, and carbon and has a dielectric constant of about 3 or less.
摘要翻译： 提供了用于处理用于沉积在两个低k电介质层之间具有低介电常数的粘合层的衬底的方法。 一方面，本发明提供了一种处理衬底的方法，包括在衬底上沉积阻挡层，其中阻挡层包括硅和碳并具有小于4的介电常数，沉积与阻挡层相邻的电介质起始层，以及 沉积与电介质起始层相邻的第一电介质层，其中介电层包括硅，氧和碳并且具有约3或更小的介电常数。
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9.发明授权SiCOH dielectric material with improved toughness and improved Si-C bonding 有权SiCOH介电材料具有改善的韧性和改善的Si-C键合公开(公告)号：US07892648B2
公开(公告)日：2011-02-22
申请号：US11040778
申请日：2005-01-21
申请人： Daniel C. Edelstein , Stephen M. Gates , Alfred Grill , Michael Lane , Robert D. Miller , Deborah A. Neumayer , Son Van Nguyen
发明人： Daniel C. Edelstein , Stephen M. Gates , Alfred Grill , Michael Lane , Robert D. Miller , Deborah A. Neumayer , Son Van Nguyen
IPC分类号： B32B9/04
CPC分类号： H01L31/103 , Y10T428/31663
摘要： A low-k dielectric material with increased cohesive strength for use in electronic structures including interconnect and sensing structures is provided that includes atoms of Si, C, O, and H in which a fraction of the C atoms are bonded as Si—CH3 functional groups, and another fraction of the C atoms are bonded as Si—R—Si, wherein R is phenyl, —[CH2]n— where n is greater than or equal to 1, HC═CH, C═CH2, C≡C or a [S]n linkage, where n is a defined above.
摘要翻译： 提供了一种用于包括互连和感测结构的电子结构中具有增强的内聚强度的低k电介质材料，其包括其中一部分C原子键合为Si-CH 3官能团的Si，C，O和H的原子 ，并且C原子的另一部分键合为Si-R-Si，其中R是苯基， - [CH 2] n - ，其中n大于或等于1，HC = CH，C = CH 2，C≡C或 一个[S] n连接，其中n是上面定义的。
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10.发明授权SiCOH dielectric material with improved toughness and improved Si-C bonding, semiconductor device containing the same, and method to make the same 失效SiCOH介电材料具有改善的韧性和改善的Si-C键合，含有其的半导体器件及其制造方法公开(公告)号：US07479306B2
公开(公告)日：2009-01-20
申请号：US11132108
申请日：2005-05-18
申请人： Daniel C. Edelstein , Stephen M. Gates , Alfred Grill , Michael Lane , Qinghuang Lin , Robert D. Miller , Deborah A. Neumayer , Son Van Nguyen
发明人： Daniel C. Edelstein , Stephen M. Gates , Alfred Grill , Michael Lane , Qinghuang Lin , Robert D. Miller , Deborah A. Neumayer , Son Van Nguyen
IPC分类号： C23C16/22
CPC分类号： H01L31/103 , Y10T428/31663
摘要： A low-k dielectric material with increased cohesive strength for use in electronic structures including interconnect and sensing structures is provided that includes atoms of Si, C, O, and H in which a fraction of the C atoms are bonded as Si—CH3 functional groups, and another fraction of the C atoms are bonded as Si—R—Si, wherein R is phenyl, —[CH2]n— where n is greater than or equal to 1, HC═CH, C═CH2, C≡C or a [S]n linkage, where n is a defined above.
摘要翻译： 提供了一种用于包括互连和感测结构的电子结构中具有增强的内聚强度的低k电介质材料，其包括其中一部分C原子键合为Si-CH 3官能团的Si，C，O和H的原子 ，另一部分C原子键合为Si-R-Si，其中R为苯基， - [CH2] n-，其中n大于或等于1，HC-CH，C-CH2，C≡C或 一个[S] n连接，其中n是上面定义的。
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