Group III nitride compound semiconductor light-emitting device
    1.
    发明授权
    Group III nitride compound semiconductor light-emitting device 有权
    III族氮化物化合物半导体发光器件

    公开(公告)号:US07304325B2

    公开(公告)日:2007-12-04

    申请号:US09845336

    申请日:2001-05-01

    IPC分类号: H01L21/00

    CPC分类号: H01L33/20 H01L33/46

    摘要: A semiconductor laminate containing a light-emitting layer is etched to reveal a side surface. A reflection surface opposite to the side surface of the semiconductor laminate is provided in one and the same chip as the semiconductor laminate. A groove may be formed in the laminate by a dicing saw, and an outer side surface of the groove may be provided as the reflection surface.

    摘要翻译: 蚀刻含有发光层的半导体层叠体,以露出侧面。 与半导体层叠体的侧面相反的反射面设置在与半导体层叠体同一芯片中。 可以通过切割锯在层叠体中形成凹槽,并且可以设置凹槽的外侧表面作为反射表面。