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11 条记录 (耗时 0.033 秒)

    Copper cleaning compositions, processes and products derived therefrom
    3.
    发明授权
    Copper cleaning compositions, processes and products derived therefrom 失效
    铜清洗组合物，由其衍生的工艺和产品

    公开(公告)号：US06830627B1

    公开(公告)日：2004-12-14

    申请号：US09274935

    申请日：1999-03-23

    申请人： Kathleen L. Covert ,  John M. Lauffer ,  Peter A. Moschak

    发明人： Kathleen L. Covert ,  John M. Lauffer ,  Peter A. Moschak

    IPC分类号： B08B700

    CPC分类号： C11D7/10 ,  C11D7/08 ,  C11D7/16 ,  C11D11/0047 ,  C23F1/18 ,  C23G1/103 ,  H05K1/167 ,  H05K3/383 ,  H05K2203/0796

    摘要： The present invention is a persulfate microetchant composition especially useful for removing impurities from copper surfaces during fabrication of microelectronic packages. The microetchant formulation is characterized by its ability to selectively clean copper in the presence of nickel, nickel-phosphorous and noble metal alloys therefrom. Furthermore, no deleterious galvanic etching occurs in this microetchant-substrate system so that substantially no undercutting of the copper occurs. The combination of high selectivity and no undercutting allows for a simplification of the microelectronic fabrication process and significant improvements in the design features of the microelectronic package, in particular higher density circuits. The persulfate microetchant composition is stabilized with acid and phosphate salts to provide a process that is stable, fast acting, environmentally acceptable, has high capacity, and can be performed at room temperature. A preferred etchant composition is 100 gm/liter sodium persulfate, 3 volume % phosphoric acid and 0.058 molar sodium phosphate dibasic.

    摘要翻译： 本发明是一种特别适用于在制造微电子封装期间从铜表面去除杂质的过硫酸盐微蚀剂组合物。 微蚀剂制剂的特征在于其在镍，镍 - 磷和贵金属合金存在下选择性地清洗铜的能力。 此外，在该微蚀刻 - 衬底系统中不会发生有害的电偶蚀刻，因此基本上不会发生铜的底切。 高选择性和无底切的组合允许微电子制造工艺的简化和微电子封装，特别是较高密度电路的设计特征的显着改进。 过硫酸盐微提取剂组合物用酸和磷酸盐稳定，以提供稳定，快速作用，环境可接受，具有高容量的方法，并且可以在室温下进行。 优选的蚀刻剂组合物为100g /升过硫酸钠，3体积％磷酸和0.058摩尔磷酸氢二钠。

    Thermal deformation management for chip carriers
    4.
    发明授权
    Thermal deformation management for chip carriers 有权
    芯片载体的热变形管理

    公开(公告)号：US06291776B1

    公开(公告)日：2001-09-18

    申请号：US09185425

    申请日：1998-11-03

    申请人： Voya R. Markovich ,  Peter A. Moschak ,  Seungbae Park ,  Sanjeev B. Sathe

    发明人： Voya R. Markovich ,  Peter A. Moschak ,  Seungbae Park ,  Sanjeev B. Sathe

    IPC分类号： H05K111

    CPC分类号： H05K1/114 ,  H01L23/49827 ,  H01L23/49838 ,  H01L2924/0002 ,  H01L2924/15173 ,  H05K1/0271 ,  H05K2201/10734 ,  H01L2924/00

    摘要： A chip carrier constituted of an organic laminate which incorporates structure compensating for thermal deformation of the carrier. Moreover, disclosed is a method of counteracting the thermal deformations encountered by chip carriers, especially during solder reflow, which is predicated on the uniformly, equidistant positioning of metal-plated through-holes (PTH) formed in the chip carrier relative to contact pads. A plurality of plated through-holes (PTH) are positioned equidistantly relative to contact (BGA) pads on a surface of a substrate which is constituted of an organic laminate material, so as to be able to control both in-plane and out-of-plane thermal deformations in the chip carrier material which may be occasioned in a solder reflow furnace or oven.

    摘要翻译： 由有机层压板构成的芯片载体，其结合补偿载体热变形的结构。 此外，公开了一种抵消芯片载体遇到的热变形的方法，特别是在焊料回流期间，其基于形成在芯片载体中的金属镀通孔（PTH）相对于接触焊盘的均匀等距定位。 多个电镀通孔（PTH）相对于由有机层压材料构成的基板的表面上的接触（BGA）焊盘等距定位，以便能够同时控制平面内和外侧 可能在焊料回流炉或烘箱中发生的芯片载体材料中的平面热变形。

    Copper etching compositions and products derived therefrom
    10.
    发明授权
    Copper etching compositions and products derived therefrom 有权
    铜蚀刻组合物及其衍生物

    公开(公告)号：US06521328B1

    公开(公告)日：2003-02-18

    申请号：US09654963

    申请日：2000-09-05

    申请人： John M. Lauffer ,  Kathleen L. Covert ,  Peter A. Moschak

    发明人： John M. Lauffer ,  Kathleen L. Covert ,  Peter A. Moschak

    IPC分类号： B32B300

    CPC分类号： C23F1/18 ,  H05K3/067 ,  Y10S428/901 ,  Y10T428/24917

    摘要： The present invention is a persulfate etchant composition especially useful for dissolving copper during fabrication of microelectronic packages. The etchant is characterized by its ability to selectively etch copper in the presence of nickel, nickel-phosphorous and noble metal alloys therefrom. Furthermore, no deleterious galvanic etching occurs in this etchant-substrate system so that substantially no undercutting of the copper occurs. The combination of high selectivity and no undercutting allows for a simplification of the microelectronic fabrication process and significant improvements in the design features of the microelectronic package, in particular higher density circuits. The persulfate etchant composition is stabilized with acid and phosphate salts to provide a process that is stable, fast acting, environmentally acceptable, has high capacity, and can be performed at room temperature. A preferred etchant composition is 230 gm/liter sodium persulfate, 3 volume % phosphoric acid and 0.058 molar sodium phosphate dibasic.

    摘要翻译： 本发明是在制造微电子封装期间特别可用于溶解铜的过硫酸盐蚀刻剂组合物。 蚀刻剂的特征在于其能够在镍，镍 - 磷和贵金属合金存在下选择性地蚀刻铜。 此外，在该蚀刻剂 - 衬底系统中不发生有害的电镀蚀刻，使得基本上不会发生铜的底切。 高选择性和无底切的组合允许微电子制造工艺的简化和微电子封装，特别是较高密度电路的设计特征的显着改进。 过硫酸盐蚀刻剂组合物用酸和磷酸盐稳定，以提供稳定，快速作用，环境可接受，具有高容量的方法，并且可以在室温下进行。 优选的蚀刻剂组合物为230gm / l过硫酸钠，3体积％磷酸和0.058摩尔磷酸氢二钠。