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1.发明授权公开(公告)号：US09209106B2
公开(公告)日：2015-12-08
申请号：US13529720
申请日：2012-06-21
申请人： Xiao Ling Shi , Suming Hu , Liane Martinez , Roden Topacio , Terence Cheung
发明人： Xiao Ling Shi , Suming Hu , Liane Martinez , Roden Topacio , Terence Cheung
IPC分类号： H05K7/20 , H01L23/367 , H01L23/498 , H05K1/02 , H05K3/34
CPC分类号： H01L23/3677 , H01L23/49833 , H01L2224/16225 , H01L2224/32245 , H01L2224/73253 , H01L2924/15311 , H05K1/0206 , H05K3/3436 , H05K2201/10416 , Y10T29/49139
摘要： A method of assembling a semiconductor chip device is provided. The method includes providing a first circuit board that has a plurality of thermally conductive vias. A second circuit board is mounted on the first circuit board over and in thermal contact with the thermally conductive vias. The second circuit board includes first side facing the first circuit board and a second and opposite side.
摘要翻译： 提供了组装半导体芯片器件的方法。 该方法包括提供具有多个导热通孔的第一电路板。 第二电路板安装在第一电路板上并与导热通孔热接触。 第二电路板包括面向第一电路板的第一面和第二相对侧。
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公开(公告)号：US20130343000A1
公开(公告)日：2013-12-26
申请号：US13529720
申请日：2012-06-21
申请人： Xiao Ling Shi , Suming Hu , Liane Martinez , Roden Topacio , Terence Cheung
发明人： Xiao Ling Shi , Suming Hu , Liane Martinez , Roden Topacio , Terence Cheung
CPC分类号： H01L23/3677 , H01L23/49833 , H01L2224/16225 , H01L2224/32245 , H01L2224/73253 , H01L2924/15311 , H05K1/0206 , H05K3/3436 , H05K2201/10416 , Y10T29/49139
摘要： A method of assembling a semiconductor chip device is provided. The method includes providing a first circuit board that has a plurality of thermally conductive vias. A second circuit board is mounted on the first circuit board over and in thermal contact with the thermally conductive vias. The second circuit board includes first side facing the first circuit board and a second and opposite side.
摘要翻译： 提供了组装半导体芯片器件的方法。 该方法包括提供具有多个导热通孔的第一电路板。 第二电路板安装在第一电路板上并与导热通孔热接触。 第二电路板包括面向第一电路板的第一面和第二相对侧。
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公开(公告)号：US20090152690A1
公开(公告)日：2009-06-18
申请号：US11956434
申请日：2007-12-14
申请人： Yue Li , Silqun Leung , Terence Cheung , Sally Yeung , Liane Martinez
发明人： Yue Li , Silqun Leung , Terence Cheung , Sally Yeung , Liane Martinez
CPC分类号： H01L23/50 , H01L21/4846 , H01L23/49811 , H01L23/49838 , H01L2924/0002 , H01L2924/19105 , H05K1/0295 , H05K3/3442 , H05K3/3452 , H05K2201/09663 , H05K2201/099 , H05K2201/09954 , H05K2201/10636 , Y02P70/611 , Y02P70/613 , H01L2924/00
摘要： Various methods and apparatus for coupling capacitors to a chip substrate are disclosed. In one aspect, a method of manufacturing is provided that includes forming a mask on a semiconductor chip substrate that has plural conductor pads. The mask has plural openings that expose selected portions of the plural conductor pads. Each of the plural openings has a footprint corresponding to a footprint of a smallest size terminal of a capacitor adapted to be coupled to the semiconductor chip substrate. A conductor material is placed in the plural openings to establish plural capacitor pads.
摘要翻译： 公开了用于将电容器耦合到芯片衬底的各种方法和装置。 一方面，提供一种制造方法，其包括在具有多个导体焊盘的半导体芯片基板上形成掩模。 该掩模具有多个露出多个导体焊盘的选定部分的开口。 多个开口中的每一个具有对应于适于耦合到半导体芯片衬底的电容器的最小尺寸端子的覆盖区的覆盖区。 将导体材料放置在多个开口中以建立多个电容器焊盘。
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公开(公告)号：US08012874B2
公开(公告)日：2011-09-06
申请号：US11956434
申请日：2007-12-14
申请人： Yue Li , Silqun Leung , Terence Cheung , Sally Yeung , Liane Martinez
发明人： Yue Li , Silqun Leung , Terence Cheung , Sally Yeung , Liane Martinez
IPC分类号： H01L21/44
CPC分类号： H01L23/50 , H01L21/4846 , H01L23/49811 , H01L23/49838 , H01L2924/0002 , H01L2924/19105 , H05K1/0295 , H05K3/3442 , H05K3/3452 , H05K2201/09663 , H05K2201/099 , H05K2201/09954 , H05K2201/10636 , Y02P70/611 , Y02P70/613 , H01L2924/00
摘要： Various methods and apparatus for coupling capacitors to a chip substrate are disclosed. In one aspect, a method of manufacturing is provided that includes forming a mask on a semiconductor chip substrate that has plural conductor pads. The mask has plural openings that expose selected portions of the plural conductor pads. Each of the plural openings has a footprint corresponding to a footprint of a smallest size terminal of a capacitor adapted to be coupled to the semiconductor chip substrate. A conductor material is placed in the plural openings to establish plural capacitor pads.
摘要翻译： 公开了用于将电容器耦合到芯片衬底的各种方法和装置。 一方面，提供一种制造方法，其包括在具有多个导体焊盘的半导体芯片基板上形成掩模。 该掩模具有多个露出多个导体焊盘的选定部分的开口。 多个开口中的每一个具有对应于适于耦合到半导体芯片衬底的电容器的最小尺寸端子的覆盖区的覆盖区。 将导体材料放置在多个开口中以建立多个电容器焊盘。
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公开(公告)号：US08314474B2
公开(公告)日：2012-11-20
申请号：US12180042
申请日：2008-07-25
申请人： Neil McLellan , Fei Guo , Daniel Chung , Terence Cheung
发明人： Neil McLellan , Fei Guo , Daniel Chung , Terence Cheung
CPC分类号： H01L23/5223 , H01G4/008 , H01G4/01 , H01G4/33 , H01L23/291 , H01L23/293 , H01L23/3192 , H01L23/642 , H01L24/03 , H01L24/05 , H01L24/13 , H01L25/0657 , H01L2224/02375 , H01L2224/0345 , H01L2224/03452 , H01L2224/0346 , H01L2224/0401 , H01L2224/05093 , H01L2224/05548 , H01L2224/05551 , H01L2224/05552 , H01L2224/05559 , H01L2224/05567 , H01L2224/05572 , H01L2224/05573 , H01L2224/05576 , H01L2224/0558 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05666 , H01L2224/1133 , H01L2224/1147 , H01L2224/11849 , H01L2224/13007 , H01L2224/13022 , H01L2224/13111 , H01L2224/14133 , H01L2224/81193 , H01L2224/81815 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01019 , H01L2924/01022 , H01L2924/01023 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/14 , H01L2924/1433 , H01L2924/19015 , H01L2924/19041 , H01L2924/19104 , H01L2924/00012 , H01L2924/00014
摘要： Various on-chip capacitors and methods of making the same are disclosed. In one aspect, a method of manufacturing a capacitor is provided that includes forming a first conductor structure on a semiconductor chip and forming a passivation structure on the first conductor structure. An under bump metallization structure is formed on the passivation structure. The under bump metallization structure overlaps at least a portion of the first conductor structure to provide a capacitor.
摘要翻译： 公开了各种片上电容器及其制造方法。 一方面，提供一种制造电容器的方法，包括在半导体芯片上形成第一导体结构，并在第一导体结构上形成钝化结构。 在钝化结构上形成凹凸金属化结构。 凸起下金属化结构与第一导体结构的至少一部分重叠以提供电容器。
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公开(公告)号：US20090032941A1
公开(公告)日：2009-02-05
申请号：US11949951
申请日：2007-12-04
申请人： Neil McLellan , Yue Li , Roden R. Topacio , Terence Cheung
发明人： Neil McLellan , Yue Li , Roden R. Topacio , Terence Cheung
IPC分类号： H01L23/488 , H01L21/60
CPC分类号： H01L24/13 , H01L21/563 , H01L23/50 , H01L23/525 , H01L23/5286 , H01L24/11 , H01L2224/10126 , H01L2224/1132 , H01L2224/1147 , H01L2224/1148 , H01L2224/13007 , H01L2224/13022 , H01L2224/13099 , H01L2224/131 , H01L2224/1411 , H01L2224/16 , H01L2224/73203 , H01L2924/0001 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01019 , H01L2924/01022 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01059 , H01L2924/01075 , H01L2924/01076 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/12044 , H01L2924/1306 , H01L2924/14 , H01L2924/1433 , H01L2924/19041 , H01L2924/30107 , H01L2924/351 , H01L2924/00
摘要： Various semiconductor chip conductor structures and methods of fabricating the same are provided. In one aspect, a method of manufacturing is provided that includes forming a conductor structure on a semiconductor chip. The conductor structure has a first site electrically connected to a first redistribution layer structure and a second site electrically connected to a second redistribution layer structure. A solder structure is formed on the conductor structure.
摘要翻译： 提供各种半导体芯片导体结构及其制造方法。 一方面，提供一种制造方法，其包括在半导体芯片上形成导体结构。 导体结构具有电连接到第一再分配层结构的第一部位和电连接到第二再分配层结构的第二部位。 在导体结构上形成焊料结构。
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公开(公告)号：US20100019347A1
公开(公告)日：2010-01-28
申请号：US12180042
申请日：2008-07-25
申请人： Neil McLellan , Fei Guo , Daniel Chung , Terence Cheung
发明人： Neil McLellan , Fei Guo , Daniel Chung , Terence Cheung
CPC分类号： H01L23/5223 , H01G4/008 , H01G4/01 , H01G4/33 , H01L23/291 , H01L23/293 , H01L23/3192 , H01L23/642 , H01L24/03 , H01L24/05 , H01L24/13 , H01L25/0657 , H01L2224/02375 , H01L2224/0345 , H01L2224/03452 , H01L2224/0346 , H01L2224/0401 , H01L2224/05093 , H01L2224/05548 , H01L2224/05551 , H01L2224/05552 , H01L2224/05559 , H01L2224/05567 , H01L2224/05572 , H01L2224/05573 , H01L2224/05576 , H01L2224/0558 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05666 , H01L2224/1133 , H01L2224/1147 , H01L2224/11849 , H01L2224/13007 , H01L2224/13022 , H01L2224/13111 , H01L2224/14133 , H01L2224/81193 , H01L2224/81815 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01019 , H01L2924/01022 , H01L2924/01023 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/14 , H01L2924/1433 , H01L2924/19015 , H01L2924/19041 , H01L2924/19104 , H01L2924/00012 , H01L2924/00014
摘要： Various on-chip capacitors and methods of making the same are disclosed. In one aspect, a method of manufacturing a capacitor is provided that includes forming a first conductor structure on a semiconductor chip and forming a passivation structure on the first conductor structure. An under bump metallization structure is formed on the passivation structure. The under bump metallization structure overlaps at least a portion of the first conductor structure to provide a capacitor.
摘要翻译： 公开了各种片上电容器及其制造方法。 一方面，提供一种制造电容器的方法，包括在半导体芯片上形成第一导体结构，并在第一导体结构上形成钝化结构。 在钝化结构上形成凹凸金属化结构。 凸起下金属化结构与第一导体结构的至少一部分重叠以提供电容器。
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