公开(公告)号：US4845068A

公开(公告)日：1989-07-04

申请号：US184958

申请日：1988-04-22

申请人： Yasuhito Takahashi ,  Shigeru Sakai ,  Yoshimasa Inoue

发明人： Yasuhito Takahashi ,  Shigeru Sakai ,  Yoshimasa Inoue

IPC分类号： B01J21/04 ,  B01J23/85 ,  B01J23/883 ,  B01J27/188 ,  B01J31/02 ,  B01J31/28 ,  B01J35/10 ,  B01J37/20 ,  C10G45/08

CPC分类号： B01J31/0217 ,  B01J23/85 ,  B01J23/883 ,  B01J27/188 ,  B01J31/0237 ,  B01J31/0271 ,  B01J31/28 ,  B01J37/20 ,  C10G45/08 ,  B01J21/04 ,  B01J35/1019 ,  B01J35/1042

摘要： Supported catalysts for hydrotreating hydrocarbons comprise (a) at least one member selected from the group consisting of oxides of metals in Groups IV and VIII of the Periodic Table, and (b) at least one organic compound having a mercapto radical or radicals (--SH) selected from the group consisting of mercapto-carboxylic acids, including alkali metal, alkaline earth metal and ammonium salts thereof and esters thereof, bivalent mercaptans, amino-substituted mercaptans, and thiocarboxylic acids. These catalysts can be easily activated by treatment in the presence of hydrogen gas at a temperature in the range from room temperature to 400.degree. C. show higher activity than catalysts activated by conventional methods.

公开(公告)号：US4992403A

公开(公告)日：1991-02-12

申请号：US394560

申请日：1989-08-16

申请人： Yasuhito Takahashi ,  Tomio Kawaguchi ,  Shigeru Sakai

发明人： Yasuhito Takahashi ,  Tomio Kawaguchi ,  Shigeru Sakai

IPC分类号： B01J37/20 ,  C10G49/04

CPC分类号： B01J37/20 ,  C10G49/04

摘要： Catalysts for hydrotreating hydrocarbons are composed of a carrier substance consisting essentially of an oxide of aluminum and/or an oxide hydrate of aluminum, at least one compound selected from water-soluble compounds of metals of Group VI and Group VIII of the Periodic Table and at least one organic compound selected from mercapto-carboxylic acids of formula HS--(CH.sub.2).sub.n --COOR (where n is 1 to 3; R is H, alkali metal, alkaline earth metal or ammonium group or alkyl group with 1-10 carbons), thio-acids of formula R'--COSH (where R' is monovalent hydrocarbon with 1-15 carbons), amino-substituted mercaptans of formula H.sub.2 N--R"--SH (R" is divalent hydrocarbon with 1-15 carbons), dimercaptans of formula HS--R"--SH (R" is same as above) and mercapto-alcohols of formula (R.sup.a S--R"'--(OH).sub.n (where R"' is hydrocarbon with 1-15 carbons; R.sup.a is H or alkyl group with 1-2 carbons; and n is 1-2), and optionally phosphoric acid. The catalysts require neither presulfurization nor heat-treatment and can be directly applied to hydrotreating hydrocarbons.

公开(公告)号：US4997801A

公开(公告)日：1991-03-05

申请号：US340518

申请日：1989-04-19

申请人： Yukuaki Mitarai ,  Naoto Kinbara ,  Yasuhito Takahashi ,  Tomio Kawaguchi ,  Shigeru Sakai

发明人： Yukuaki Mitarai ,  Naoto Kinbara ,  Yasuhito Takahashi ,  Tomio Kawaguchi ,  Shigeru Sakai

IPC分类号： B01J27/047 ,  B01J21/04 ,  B01J23/85 ,  B01J23/883 ,  B01J27/232 ,  B01J31/02 ,  B01J31/04 ,  B01J31/26 ,  B01J35/00 ,  B01J35/10 ,  B01J37/20 ,  C10G45/08 ,  C10G47/10

CPC分类号： B01J31/26 ,  B01J23/85 ,  B01J23/883 ,  B01J31/0217 ,  B01J31/0218 ,  B01J35/002 ,  B01J37/20 ,  C10G45/08 ,  B01J21/04 ,  B01J31/04 ,  B01J35/1019 ,  B01J35/1042

摘要： There is disclosed a catalyst which hydrotreats hydrocarbons without need of presulfiding. The catalyst comprises a carrier of an inorganic oxide containing a sulfurizing agent and a water-soluble compound of two metals one of which belongs to the Group VI of the Periodic Table, while the other belongs to the Group VIII. The carrier has pores in which a precursor of a sulfide is formed. The coordination number of the closest Group VI metal found from the radial distribution function around the Group VI metal is less than 0.25. The function is obtained from the Fourier transform of the extended x-ray absorption fine structure of the precursor.

公开(公告)号：US4981828A

公开(公告)日：1991-01-01

申请号：US442448

申请日：1989-11-28

申请人： Yasuhito Takahashi ,  Shigeru Sakai

发明人： Yasuhito Takahashi ,  Shigeru Sakai

IPC分类号： B01J23/88 ,  B01J23/888 ,  B01J27/188 ,  B01J31/02 ,  B01J31/04 ,  B01J31/34 ,  B01J37/20 ,  C10G49/02 ,  C10G49/04

CPC分类号： B01J31/0217 ,  B01J23/88 ,  B01J23/882 ,  B01J23/888 ,  B01J27/188 ,  B01J31/04 ,  B01J31/34 ,  B01J37/20 ,  C10G49/02 ,  C10G49/04

摘要： A catalyst for the hydrotreatment of a hydrocarbon oil comprises a carrier of an inorganic oxide and an active component supported on the carrier and formed of at least one member selected from the group consisting of water-soluble compounds of molybdenum, tungsten, and the metal of Group 8 in the Periodic Table of Elements and at least one mercapto (--SH) group-containing organic compound selected from the group consisting a mercaptocarboxylic acids represented by the general formula:HS--(CH.sub.2).sub.n --COOR(wherein n stands for an integer in the range of 1 to 3 and R for a hydrogen atom, an alkali metal, an alkaline earth metal, ammonium, or a linear or branched naphthenic alkyl group having 1 to 10 carbon atoms), amino-substituted mercaptans represented by the general formula:H.sub.2 N--R'--SH(wherein R' stands for a divalent hydrocarbon group), divalent mercaptans represented by the general formula:HS--R'--SH(wherein R' stands for a divalent hydrocarbon group), and thio acids represented by the general formula:R"--COSH(wherein R" stands for a monovalent hydrocarbon group).

公开(公告)号：US20070272941A1

公开(公告)日：2007-11-29

申请号：US10599501

申请日：2005-03-31

申请人： Hisashi Minemoto ,  Yasuo Kitaoka ,  Isao Kidoguchi ,  Yusuke Mori ,  Fumio Kawamura ,  Takatomo Sasaki ,  Yasuhito Takahashi

发明人： Hisashi Minemoto ,  Yasuo Kitaoka ,  Isao Kidoguchi ,  Yusuke Mori ,  Fumio Kawamura ,  Takatomo Sasaki ,  Yasuhito Takahashi

IPC分类号： C30B29/38 ,  C30B35/00 ,  H01L29/12 ,  H01L33/00

CPC分类号： C30B9/10 ,  C30B29/403 ,  C30B29/406 ,  Y10T117/1092 ,  Y10T117/1096

摘要： A method for producing Group-III-element nitride crystals by which an improved growth rate is obtained and large high-quality crystals can be grown in a short time, a producing apparatus used therein, and a semiconductor element obtained using the method and the apparatus are provided. The method is a method for producing Group-III-element nitride crystals that includes a crystal growth process of subjecting a material solution containing a Group III element, nitrogen, and at least one of alkali metal and alkaline-earth metal to pressurizing and heating under an atmosphere of a nitrogen-containing gas so that the nitrogen and the Group III element in the material solution react with each other to grow crystals. The method further includes, prior to the crystal growth process, a material preparation process of preparing the material solution in a manner that under an atmosphere of a nitrogen-containing gas, at least one of an ambient temperature and an ambient pressure is set so as to be higher than is set as a condition for the crystal growth process so that the nitrogen is allowed to dissolve in a melt containing the Group III element and the at least one of alkali metal and alkaline-earth metal. The method according to the present invention can be performed by using, for example, the producing apparatus shown in FIG. 7.

摘要翻译： 一种生产III族元素的氮化物晶体的方法，其中获得了改善的生长速率并且可以在短时间内生长大量的高质量晶体，其中使用的制造装置以及使用该方法和装置得到的半导体元件 被提供。 该方法是生产III族元素氮化物晶体的方法，其包括使含有III族元素，氮和至少一种碱金属和碱土金属的材料溶液经受加压和加热的晶体生长过程 含氮气体的气氛使得材料溶液中的氮和III族元素彼此反应生长晶体。 该方法还包括在晶体生长过程之前，制备材料制备方法，该方法是在含氮气体的环境温度和环境压力中的至少一种的气氛下， 高于设定为晶体生长过程的条件，使得氮能够溶解在含有III族元素和碱金属和碱土金属中的至少一种的熔体中。 根据本发明的方法可以通过使用例如图1所示的制造装置来进行。 7 。

公开(公告)号：US20070157876A1

公开(公告)日：2007-07-12

申请号：US10587223

申请日：2005-04-27

申请人： Hisashi Minemoto ,  Yasuo Kitaoka ,  Isao Kidoguchi ,  Yusuke Mori ,  Fumio Kawamura ,  Takatomo Sasaki ,  Hidekazu Umeda ,  Yasuhito Takahashi

发明人： Hisashi Minemoto ,  Yasuo Kitaoka ,  Isao Kidoguchi ,  Yusuke Mori ,  Fumio Kawamura ,  Takatomo Sasaki ,  Hidekazu Umeda ,  Yasuhito Takahashi

IPC分类号： C30B11/00 ,  C30B23/00 ,  C30B21/06 ,  B01J3/04

CPC分类号： C30B29/403 ,  C30B9/10 ,  C30B29/406 ,  C30B35/00 ,  Y10T117/1064 ,  Y10T117/1096

摘要： A manufacturing apparatus of Group III nitride crystals and a method for manufacturing Group III nitride crystals are provided, by which high quality crystals can be manufactured. For instance, crystals are grown using the apparatus of the present invention as follows. A crystal raw material (131) and gas containing nitrogen are introduced into a reactor vessel (120), to which heat is applied by a heater (110), and crystals are grown in an atmosphere of pressure applied thereto. The gas is introduced from a gas supplying device (180) to the reactor vessel (120) through a gas inlet of the reactor vessel, and then is exhausted to the inside of a pressure-resistant vessel (102) through a gas outlet of the reactor vessel. Since the gas is introduced directly to the reactor vessel (120) without passing through the pressure-resistant vessel (102), the mixture of impurities attached to the pressure-resistant vessel (102) and the like into the site of the crystal growth can be prevented. Further, since the gas flows through the reactor vessel (120), there is no aggregation of an evaporating alkali metal, etc., at the gas inlet or the like, and such an alkali metal does not flow into the gas supplying device (180). As a result, the quality of Group III nitride crystals obtained can be improved.

摘要翻译： 提供III族氮化物晶体的制造装置和制造III族氮化物晶体的方法，由此可以制造高质量的晶体。 例如，使用本发明的装置如下生长晶体。 将晶体原料（131）和含氮气体引入反应器容器（120）中，通过加热器（110）向其施加热量，并在施加压力的气氛中生长晶体。 气体通过反应器容器的气体入口从气体供给装置（180）引入反应器容器（120），然后通过反应器的气体出口被排出到耐压容器（102）的内部 反应堆容器。 由于气体不通过耐压容器（102）直接引入反应器容器（120），附着在耐压容器（102）等上的杂质混合物进入晶体生长位置可以 被阻止 此外，由于气体流过反应器容器（120），所以在气体入口等处没有蒸发的碱金属等的聚集，并且这种碱金属不会流入气体供给装置（180 ）。 结果，可以提高获得的III族氮化物晶体的质量。

公开(公告)号：US06785447B2

公开(公告)日：2004-08-31

申请号：US09767582

申请日：2001-01-22

申请人： Tetsuzo Yoshimura ,  Yasuhito Takahashi ,  James Roman ,  Solomon I. Beilin ,  Wen-chou Vincent Wang ,  Masaaki Inao

发明人： Tetsuzo Yoshimura ,  Yasuhito Takahashi ,  James Roman ,  Solomon I. Beilin ,  Wen-chou Vincent Wang ,  Masaaki Inao

IPC分类号： G02B626

CPC分类号： G02B6/10 ,  G02B6/06 ,  G02B6/12002 ,  G02B6/124 ,  G02B6/13 ,  G02B6/132 ,  G02B6/136 ,  G02B6/26 ,  G02B6/42 ,  G02B6/4214 ,  G02B6/43 ,  G02B2006/12104 ,  G02B2006/12107 ,  G02B2006/12173 ,  H01L21/6835 ,  H01L23/48 ,  H01L23/5389 ,  H01L24/24 ,  H01L24/82 ,  H01L24/96 ,  H01L25/167 ,  H01L2221/68345 ,  H01L2221/6835 ,  H01L2221/68359 ,  H01L2221/68363 ,  H01L2221/68368 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/16225 ,  H01L2224/24226 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/0101 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01056 ,  H01L2924/01057 ,  H01L2924/01058 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01076 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/10336 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/12043 ,  H01L2924/14 ,  H01L2924/18162 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/3011 ,  H01L2924/3511 ,  H05K1/0274 ,  H05K1/14 ,  H01L2924/00 ,  H01L2224/05611 ,  H01L2924/00014 ,  H01L2224/05644 ,  H01L2224/05664

摘要： An optoreflective structure for reflecting an optical signal following a path defined by an optical waveguide comprising a first cladding layer having a first planar cladding surface; a waveguide disposed on the first cladding layer; and a second cladding layer disposed on the waveguide and having a second planar cladding surface. The first cladding layer, the second cladding layer and the waveguide terminate in a generally dove-tailed structure having a beveled planar surface. An optoreflector is disposed on the beveled planar surface for a changing direction of an optical signal passing through the waveguide. Methods of producing the optoreflective structure are disclosed.

摘要翻译： 一种用于反射遵循由光波导限定的路径的光信号的光反射结构，包括具有第一平面包层表面的第一包层; 布置在所述第一包层上的波导; 以及设置在波导上并具有第二平面包层表面的第二包覆层。 第一包层，第二包层和波导终止于具有斜面平坦表面的大致鸽尾结构中。 光反射器设置在倾斜平面上，用于通过波导的光信号的改变方向。 公开了制造光反射结构的方法。

公开(公告)号：US06239485B1

公开(公告)日：2001-05-29

申请号：US09315785

申请日：1999-05-20

申请人： Michael G. Peters ,  Wen-chou Vincent Wang ,  Yasuhito Takahashi ,  William Chou ,  Michael G. Lee ,  Solomon Beilin

发明人： Michael G. Peters ,  Wen-chou Vincent Wang ,  Yasuhito Takahashi ,  William Chou ,  Michael G. Lee ,  Solomon Beilin

IPC分类号： H01L2312

CPC分类号： H05K1/0219 ,  H01L23/49822 ,  H01L23/49833 ,  H01L23/49838 ,  H01L23/50 ,  H01L23/5383 ,  H01L23/5385 ,  H01L23/5386 ,  H01L23/552 ,  H01L2224/16225 ,  H01L2224/16235 ,  H01L2924/01004 ,  H01L2924/01019 ,  H01L2924/01046 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/15311 ,  H01L2924/3011 ,  H01L2924/3025 ,  H05K1/141 ,  H05K1/144 ,  H05K3/20 ,  H05K2201/049 ,  H05K2201/055 ,  H05K2201/10378 ,  H01L2924/00

摘要： An interposer for providing power, ground, and signal connections between an integrated circuit chip or chips and a substrate. The inventive interposer includes a signal core and external power/ground connection wrap. The two sections may be fabricated and tested separately, then joined together using z-connection technology. The signal core is formed from a conductive power/ground plane positioned between two dielectric layers. A patterned metal layer is formed on each dielectric layer. The two metal layers are interconnected by a through via or post process. The conductive power/ground plane functions to reduce signal cross-talk between signal lines formed on the two patterned metal layers. The power/ground wrap includes an upper substrate positioned above the signal core and a lower substrate positioned below the signal core. The upper and lower substrates of the power/ground wrap are formed from a dielectric film having a patterned metal layer on both sides, with the patterned layers connected by a through via or post process. The two power/ground wrap substrates may be formed separately or from one substrate which is bent into a desired form (e.g., a “U” shape). The two power/ground substrates are maintained in their proper alignment relative to the signal core and to each other by edge connectors which are also connected to the signal core's intermediary power/ground plane.

摘要翻译： 一种用于在集成电路芯片或芯片与基板之间提供电源，接地和信号连接的插入器。 本发明的插入器包括信号芯和外部电源/接地连接外壳。 这两个部分可以单独制造和测试，然后使用z连接技术连接在一起。 信号芯由位于两个电介质层之间的导电电源/接地平面形成。 在每个电介质层上形成图案化的金属层。 两个金属层通过通孔或后处理相互连接。 导电功率/接地面用于减少形成在两个图案化金属层上的信号线之间的信号串扰。 电源/接地包裹物包括位于信号芯上方的上基板和位于信号芯下方的下基板。 电源/接地线圈的上下基板由两面具有图案化金属层的电介质膜形成，图案化层通过通孔或后工艺连接。 两个电源/接地包覆基板可以分开地形成，或者可以从弯曲成所需形状（例如，“U”形状）的一个基板形成。 两个电源/接地基板相对于信号芯线保持正确的对准，并通过也连接到信号芯的中间电源/接地平面的边缘连接器彼此保持。

公开(公告)号：USD435061S

公开(公告)日：2000-12-12

申请号：US108470

申请日：1999-07-29

申请人： Hiroyuki Ohtsuka ,  Hidenobu Kondo ,  Seiichi Irokawa ,  Hirohisa Hoshino ,  Yasuhito Takahashi

设计人： Hiroyuki Ohtsuka ,  Hidenobu Kondo ,  Seiichi Irokawa ,  Hirohisa Hoshino ,  Yasuhito Takahashi

公开(公告)号：US5860359A

公开(公告)日：1999-01-19

申请号：US737468

申请日：1997-02-07

申请人： Noboru Taniguchi ,  Takaharu Gamou ,  Yasuhito Takahashi ,  Kunihito Mori ,  Eiichi Yasumoto

发明人： Noboru Taniguchi ,  Takaharu Gamou ,  Yasuhito Takahashi ,  Kunihito Mori ,  Eiichi Yasumoto

IPC分类号： A23L3/3418 ,  A23L3/3436 ,  A47J27/04 ,  B01D53/32 ,  C01B3/00 ,  C01B13/02 ,  A23L1/00 ,  A47J27/00 ,  F27D11/02

CPC分类号： C01B13/0255 ,  A23L3/3418 ,  A23L3/3436 ,  A47J27/04 ,  B01D53/326 ,  C01B13/0251 ,  C01B3/0005 ,  B01D2257/104 ,  B01D2257/80 ,  C01B2210/0046 ,  C01B2210/0053 ,  Y02E60/324

摘要： A face shaped molding body of first electrode/solid electrolyte/second electrode composed of first and second electrodes on both the faces of the sold electrolyte layer is adapted to impress DC valve between the first electrode and second electrode in a condition where the solid electrolyte layer is heated to a given operation temperature. Atmosphere poor in oxygen or atmosphere rich in oxygen can be formed, by a gas pump which is selectively capable of discharging or feeding at least oxygen gas from the first atmosphere to the second atmosphere, so that atmosphere suitable for food preservation can be retained or chamber wherein oxygen is likely to be poor at heating can be retained in a condition rich in oxygen. Also, oxygen gas can be exchanged for steam when necessary so that the exchange ratio can be controlled by the controlling of the electrolysis voltage. Further, atmosphere is likely to be controlled, because the transportation amount of the oxygen gas and steam can be weighed by the current amount.

摘要翻译： PCT No.PCT / JP96 / 00718 Sec。 371日期1997年2月7日 102（e）日期1997年2月7日PCT 1996年3月18日PCT公布。 公开号WO96 / 28589 日期1996年9月19日在出售的电解质层的两个表面上由第一和第二电极组成的第一电极/固体电解质/第二电极的面状成形体适于在第一电极和第二电极之间的条件下施加DC阀 其中固体电解质层被加热到给定的操作温度。 可以通过选择性地能够将至少氧气从第一大气排出或进料至第二气氛的气泵形成氧气或富氧气氛的气氛，从而可以保持适合于食物保存的气氛或室 其中氧气在加热时可能很差，可以保持在富氧的条件下。 此外，氧气可以根据需要进行蒸汽交换，从而可以通过控制电解电压来控制交换比。 此外，由于氧气和蒸汽的输送量可以通过当前量称量，所以可能控制气氛。