公开(公告)号：US20110033962A1

公开(公告)日：2011-02-10

申请号：US12907081

申请日：2010-10-19

申请人： Young-Se Kwon ,  Jae-Ho Kim

发明人： Young-Se Kwon ,  Jae-Ho Kim

IPC分类号： H01L33/60

CPC分类号： H01L33/46 ,  H01L33/20 ,  H01L33/44

摘要： Provided are a high efficiency light emitting diode and a method for fabricating the same, in which a multi-layer reflector is laminated to a surface emission type light emitting diode to improve the efficiency of a light emitting diode. A high efficiency reflector is integrated on the light emitting diode using a dry etching process and a wet etching process. Although light produced from an active layer when applying a current thereto is emitted in several directions, the reflectors formed both sides of the active layer reflect the emitted light toward a surface of a semiconductor substrate, thus improving the light efficiency. Compared with the existing light emitting diode, the structure of the proposed light emitting diode is more efficient and therefore it can be used as a light source having low power consumption and high brightness. Also, the light emitting diode can be fabricated using the existing semiconductor process, thus reducing the complexity of the fabricating process.

摘要翻译： 提供了一种高效率发光二极管及其制造方法，其中多层反射器被层压到表面发射型发光二极管以提高发光二极管的效率。 使用干蚀刻工艺和湿蚀刻工艺将高效率反射器集成在发光二极管上。 尽管在施加电流时从有源层产生的光在几个方向上发射，但是形成有源层的两侧的反射器将发射的光朝向半导体衬底的表面反射，从而提高了光效率。 与现有的发光二极管相比，所提出的发光二极管的结构更有效率，因此可以用作具有低功耗和高亮度的光源。 此外，可以使用现有的半导体工艺来制造发光二极管，从而降低制造工艺的复杂性。

公开(公告)号：US20090146168A1

公开(公告)日：2009-06-11

申请号：US12297889

申请日：2006-07-07

申请人： Young-Se Kwon ,  Jae-Ho Kim

发明人： Young-Se Kwon ,  Jae-Ho Kim

IPC分类号： H01L33/00 ,  H01L21/3065 ,  H01L21/308

CPC分类号： H01L33/20 ,  H01L33/46

摘要： Provided are a high efficiency light emitting diode and a method for fabricating the same, in which a multi-layer reflector is laminated to a surface emission type light emitting diode to improve the efficiency of a light emitting diode. A high efficiency reflector is integrated on the light emitting diode using a dry etching process and a wet etching process. Although light produced from an active layer when applying a current thereto is emitted in several directions, the reflectors formed both sides of the active layer reflect the emitted light toward a surface of a semiconductor substrate, thus improving the light efficiency. Compared with the existing light emitting diode, the structure of the proposed light emitting diode is more efficient and therefore it can be used as a light source having low power consumption and high brightness. Also, the light emitting diode can be fabricated using the existing semiconductor process, thus reducing the complexity of the fabricating process.

摘要翻译： 提供了一种高效率发光二极管及其制造方法，其中多层反射器被层压到表面发射型发光二极管以提高发光二极管的效率。 使用干蚀刻工艺和湿蚀刻工艺将高效率反射器集成在发光二极管上。 尽管在施加电流时从有源层产生的光在几个方向上发射，但是形成有源层的两侧的反射器将发射的光朝向半导体衬底的表面反射，从而提高了光效率。 与现有的发光二极管相比，所提出的发光二极管的结构更有效率，因此可以用作具有低功耗和高亮度的光源。 此外，可以使用现有的半导体工艺来制造发光二极管，从而降低制造工艺的复杂性。

公开(公告)号：US5898191A

公开(公告)日：1999-04-27

申请号：US582162

申请日：1996-01-02

申请人： Young-Se Kwon ,  O-Seung Yang

发明人： Young-Se Kwon ,  O-Seung Yang

IPC分类号： B41J2/447 ,  H01L31/0232 ,  H01L33/20 ,  H01L33/00

CPC分类号： H01L33/20 ,  B41J2/45 ,  H01L31/0232

摘要： An optical integrated device having an even height such that it can be easily arrayed or integrated with other devices in a single substrate. The device includes a semi-conductor substrate having a substrate-side electrode which is formed on one side of the semi-conductor substrate. A micro-lens layer is epitaxially grown on the opposite side to where the substrate-side electrode is formed. The opposite side also has a hemispherically etched surface. The device also includes epitaxial layers which are grown on a whole area on the micro lens layer and a dielectric film which is formed on the epitaxial layers. Additionally, an epilayer-side electrode is formed on a whole area of the dielectric film.

摘要翻译： 一种具有均匀高度的光学集成装置，使得其可以容易地与单个基板中的其它装置排列或集成。 该装置包括半导体基板，其具有形成在半导体基板的一侧上的基板侧电极。 在形成基板侧电极的相反侧外延生长微透镜层。 相对侧也具有半球蚀刻的表面。 该器件还包括在微透镜层上的整个区域上生长的外延层和形成在外延层上的电介质膜。 此外，在绝缘膜的整个区域上形成外延层侧电极。

公开(公告)号：US08120045B2

公开(公告)日：2012-02-21

申请号：US12596888

申请日：2007-09-18

申请人： Young-Se Kwon ,  Kyoung-Min Kim ,  Sung-Woo Hyun ,  Bo-In Son

发明人： Young-Se Kwon ,  Kyoung-Min Kim ,  Sung-Woo Hyun ,  Bo-In Son

IPC分类号： H01L29/18

CPC分类号： H01L31/024 ,  H01L27/14618 ,  H01L31/0203 ,  H01L33/483 ,  H01L33/60 ,  H01L33/642 ,  H01L2224/48091 ,  H01L2924/00014

摘要： A metal-based photonic device package module that is capable of greatly improving heat releasing efficiency and implementing a thin package is provided. The metal-based photonic device package module includes a metal substrate that is formed the shape of a plate, a metal oxide layer that is formed on the metal substrate to have a mounting cavity, a photonic device that is mounted in the mounting cavity of the metal oxide layer, and a reflecting plane that is formed at an inner surface of the mounting cavity of the metal oxide layer.

摘要翻译： 提供了能够大大提高放热效率并实现薄包装的基于金属的光子器件封装模块。 金属基光子器件封装模块包括金属基板，其形成为板的形状，金属氧化物层形成在金属基板上以具有安装空腔，光子器件安装在安装空间中 金属氧化物层和形成在金属氧化物层的安装空腔的内表面的反射面。

公开(公告)号：US20100133557A1

公开(公告)日：2010-06-03

申请号：US12596888

申请日：2007-09-18

申请人： Young-Se Kwon ,  Kyoung-Min Kim ,  Sung-Woo Hyun ,  Bo-In Son

发明人： Young-Se Kwon ,  Kyoung-Min Kim ,  Sung-Woo Hyun ,  Bo-In Son

IPC分类号： H01L33/00 ,  H01L21/50

CPC分类号： H01L31/024 ,  H01L27/14618 ,  H01L31/0203 ,  H01L33/483 ,  H01L33/60 ,  H01L33/642 ,  H01L2224/48091 ,  H01L2924/00014

摘要： A metal-based photonic device package module that is capable of greatly improving heat releasing efficiency and implementing a thin package is provided. The metal-based photonic device package module includes a metal substrate that is formed the shape of a plate, a metal oxide layer that is formed on the metal substrate to have a mounting cavity, a photonic device that is mounted in the mounting cavity of the metal oxide layer, and a reflecting plane that is formed at an inner surface of the mounting cavity of the metal oxide layer.

摘要翻译： 提供了能够大大提高放热效率并实现薄包装的基于金属的光子器件封装模块。 金属基光子器件封装模块包括金属基板，其形成为板的形状，金属氧化物层形成在金属基板上以具有安装空腔，光子器件安装在安装空间中 金属氧化物层和形成在金属氧化物层的安装空腔的内表面的反射面。

公开(公告)号：US20070296075A1

公开(公告)日：2007-12-27

申请号：US11667537

申请日：2005-01-24

申请人： Young-Se Kwon ,  Seong Shin

发明人： Young-Se Kwon ,  Seong Shin

IPC分类号： H01L23/28 ,  H01L23/10

CPC分类号： H01L23/142 ,  H01L23/04 ,  H01L23/49816 ,  H01L23/49827 ,  H01L24/48 ,  H01L24/73 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73215 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01078 ,  H01L2924/15311 ,  H01L2924/16152 ,  H01L2924/16195 ,  H01L2924/19011 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/0401 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A package using selectively anodized metal and a manufacturing method thereof are provided. The method includes a patterning step, an anodized metal film forming step, a via hole forming step, and a bump forming step. The pattering step is performed by attaching a masking material to a surface of a metal substrate for integrating semiconductor elements and patterning regions that will not be anodized. The anodized metal film forming step is performed by selectively anodizing the patterned metal substrate and forming a metal oxidation layer having a predetermined thickness. The via hole forming step is performed by forming the via holes in the metal oxidation layer. The bump forming step is performed by forming the bumps for surface-mounting.

摘要翻译： 提供了使用选择性阳极化金属的封装及其制造方法。 该方法包括图案化步骤，阳极氧化金属膜形成步骤，通孔形成步骤和凸块形成步骤。 图案化步骤通过将掩模材料附着到用于积分半导体元件的金属基板的表面和不被阳极氧化的图案化区域来进行。 阳极氧化金属膜形成步骤通过选择性地阳极氧化图案化的金属基底并形成具有预定厚度的金属氧化层来进行。 通孔形成步骤通过在金属氧化层中形成通孔来进行。 通过形成用于表面安装的凸块来进行凸块形成步骤。

公开(公告)号：US08034664B2

公开(公告)日：2011-10-11

申请号：US12914725

申请日：2010-10-28

申请人： Young-Se Kwon ,  Kyoung Min Kim

发明人： Young-Se Kwon ,  Kyoung Min Kim

IPC分类号： H01L21/44

CPC分类号： H01L23/66 ,  H01L21/4857 ,  H01L23/3121 ,  H01L23/49822 ,  H01L23/5389 ,  H01L23/645 ,  H01L24/24 ,  H01L24/82 ,  H01L25/072 ,  H01L25/162 ,  H01L2223/6616 ,  H01L2223/6627 ,  H01L2223/6644 ,  H01L2224/04105 ,  H01L2224/24227 ,  H01L2224/32245 ,  H01L2224/73267 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/09701 ,  H01L2924/12044 ,  H01L2924/15153 ,  H01L2924/1517 ,  H01L2924/15787 ,  H01L2924/19033 ,  H01L2924/19041 ,  H01L2924/19042 ,  H05K1/053 ,  H05K1/185 ,  H01L2924/00

摘要： Provided is a three-dimensional aluminum package module including: an aluminum substrate; an aluminum oxide layer formed on the aluminum substrate and having at least one first opening of which sidewalls are perpendicular to an upper surface of the aluminum substrate; a semiconductor device mounted in the first opening using an adhesive; an organic layer covering the aluminum oxide layer and the semiconductor device; and a first interconnection line and a passive device circuit formed on the organic layer and the aluminum oxide layer.

摘要翻译： 提供一种三维铝封装模块，包括：铝基板; 形成在所述铝基板上并具有至少一个第一开口的铝氧化物层，所述第一开口的侧壁垂直于所述铝基板的上表面; 使用粘合剂安装在第一开口中的半导体器件; 覆盖氧化铝层和半导体器件的有机层; 以及形成在有机层和氧化铝层上的第一互连线和无源器件电路。

公开(公告)号：US20100144099A1

公开(公告)日：2010-06-10

申请号：US12695449

申请日：2010-01-28

申请人： Young-Se Kwon ,  Kyoung-Min Kim

发明人： Young-Se Kwon ,  Kyoung-Min Kim

IPC分类号： H01L21/50

CPC分类号： H01L21/6835 ,  H01L21/4846 ,  H01L21/486 ,  H01L23/49816 ,  H01L23/49822 ,  H01L23/49827 ,  H01L23/5227 ,  H01L23/66 ,  H01L24/32 ,  H01L24/48 ,  H01L2221/68363 ,  H01L2224/16225 ,  H01L2224/32188 ,  H01L2224/48227 ,  H01L2224/73253 ,  H01L2224/92247 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01051 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/07802 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/15787 ,  H01L2924/16152 ,  H01L2924/181 ,  H01L2924/19011 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/00 ,  H01L2224/0401 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A method for manufacturing passive devices and semiconductor packages using a thin metal piece is provided. According to the method, an adhesive layer is formed on a dummy substrate; a thin metal piece is bonded on the adhesive layer; a masking material is attached to the thin metal piece, a dielectric layer is formed; a masking material is attached to form metal pads; a metal pad is formed, and the formed device is attached to a lower substrate using the metal pads; the adhesive layer and the dummy substrate are removed, a masking material is attached on a surface exposed, a region where passive devices are to be formed is patterned, and the thin metal piece is etched at a predetermined depth; and solder bumps for surface mounting are formed.

摘要翻译： 提供了使用薄金属片制造无源器件和半导体封装的方法。 根据该方法，在虚设基板上形成粘接层; 在粘合剂层上粘接薄金属片; 将掩模材料附着到薄金属片上，形成电介质层; 连接掩模材料以形成金属垫; 形成金属垫，并使用金属垫将形成的装置附接到下基板; 去除粘合剂层和虚设基板，将掩模材料附着在暴露的表面上，对要形成无源器件的区域进行图案化，并且以预定深度蚀刻薄金属片; 并形成用于表面安装的焊料凸块。

公开(公告)号：US20090175022A1

公开(公告)日：2009-07-09

申请号：US12281516

申请日：2006-06-15

申请人： Young-Se Kwon ,  Jon-Min Yook

发明人： Young-Se Kwon ,  Jon-Min Yook

IPC分类号： H05K5/02 ,  H01R12/00 ,  H01R43/00

CPC分类号： H05K3/4638 ,  B81C1/0023 ,  H01L21/486 ,  H01L23/49827 ,  H01L2924/0002 ,  H05K1/0272 ,  H05K1/185 ,  H05K3/243 ,  H05K3/4614 ,  H05K3/4647 ,  H05K3/4652 ,  H05K3/4679 ,  H05K3/4697 ,  H05K2201/0394 ,  H05K2201/09063 ,  H05K2201/09781 ,  H05K2203/063 ,  H05K2203/0733 ,  H05K2203/167 ,  Y10T29/49213 ,  H01L2924/00

摘要： A method for allowing an easier electric connection between layers of a multi-layer package structure using a metal pin fabricated based on semiconductor device processes is provided. A metal pin having a high aspect ratio is formed on a lower substrate, while a via hole is formed in an upper substrate. The metal pin is inserted into the via hole and adhered together to make an electric connection between the lower and upper substrates. The metal pin is obtained by patterning a thick photoresist material and plating a material thereon. The metal pin may have a core member obtained by performing a plating process on the surface of a patterned polymer based pin. Solder or gold is used for adhesion and electric connection between the signal line and the metal pin. The above electric connection method can be simpler and have improved structural stability compared with the typical connection method.

摘要翻译： 提供一种使用基于半导体器件工艺制造的金属引脚使多层封装结构的层之间更容易的电连接的方法。 在下基板上形成具有高纵横比的金属销，同时在上基板中形成通孔。 将金属销插入通孔并粘接在一起，以在下基板和上基板之间形成电连接。 金属针是通过图案化厚的光致抗蚀剂材料并在其上镀覆材料而获得的。 金属销可以具有通过在图案化聚合物基销的表面上进行电镀处理而获得的芯构件。 焊料或金子用于信号线和金属针之间的粘合和电连接。 与典型的连接方法相比，上述电连接方法可以更简单并且具有改进的结构稳定性。

公开(公告)号：US07696055B2

公开(公告)日：2010-04-13

申请号：US11912178

申请日：2005-09-06

申请人： Young-Se Kwon ,  Kyoung-Min Kim

发明人： Young-Se Kwon ,  Kyoung-Min Kim

IPC分类号： H01L21/20

CPC分类号： H01L21/6835 ,  H01L21/4846 ,  H01L21/486 ,  H01L23/49816 ,  H01L23/49822 ,  H01L23/49827 ,  H01L23/5227 ,  H01L23/66 ,  H01L24/32 ,  H01L24/48 ,  H01L2221/68363 ,  H01L2224/16225 ,  H01L2224/32188 ,  H01L2224/48227 ,  H01L2224/73253 ,  H01L2224/92247 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01051 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/07802 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/15787 ,  H01L2924/16152 ,  H01L2924/181 ,  H01L2924/19011 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/00 ,  H01L2224/0401 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A method for manufacturing passive devices and semiconductor packages using a thin metal piece is provided. According to the method, an adhesive layer is formed on a dummy substrate; a thin metal piece is bonded on the adhesive layer; a masking material is attached to the thin metal piece, a region where vias are to be formed is patterned, the thin metal piece is etched at a predetermined depth; the masking material is removed, the etched portion is filled with polymer to form a flat polymer layer, a masking material is attached on the polymer layer, a region that is to be attached to an IPD or an IC chip is patterned, a metal pad is formed, and the formed devices are attached to a lower substrate using the metal pad; the adhesive layer and the dummy substrate are removed, a masking material is attached on a surface exposed, a region where passive devices are to be formed is patterned, and the thin metal piece is etched at a predetermined depth; and solder bumps for surface mounting are formed.

摘要翻译： 提供了使用薄金属片制造无源器件和半导体封装的方法。 根据该方法，在虚设基板上形成粘接层; 在粘合剂层上粘接薄金属片; 将掩模材料附着到薄金属片上，对要形成通孔的区域进行图案化，在预定深度刻蚀薄金属片; 去除掩模材料，用聚合物填充蚀刻部分以形成平坦的聚合物层，在聚合物层上附着掩蔽材料，将要附着到IPD或IC芯片的区域进行图案化，金属焊盘 并且使用金属垫将形成的器件附接到下基板; 去除粘合剂层和虚设基板，将掩模材料附着在暴露的表面上，对要形成无源器件的区域进行图案化，并且以预定深度蚀刻薄金属片; 并形成用于表面安装的焊料凸块。