公开(公告)号：US06426308B1

公开(公告)日：2002-07-30

申请号：US09209196

申请日：1998-12-10

申请人： Young-wook Park ,  Moon-yong Lee ,  Kyung-hun Kim ,  In-sung Park

发明人： Young-wook Park ,  Moon-yong Lee ,  Kyung-hun Kim ,  In-sung Park

IPC分类号： H01L2131

CPC分类号： C23C16/56 ,  C23C16/405 ,  C23C16/46 ,  H01L21/31604 ,  H01L21/31691 ,  H01L28/40 ,  H01L28/55

摘要： A method form forming a dielectric film on a substrate includes the steps of placing the substrate in a process chamber wherein said substrate is isolated from an external environment, depositing the dielectric film on the substrate in the process chamber, and annealing the dielectric film in said process chamber. In particular, the dielectric film can be formed from Ta2O5. Systems for forming the dielectric film are also disclosed.

摘要翻译： 在衬底上形成电介质膜的方法形式包括以下步骤：将衬底放置在处理室中，其中所述衬底与外部环境隔离，将电介质膜沉积在处理室中的衬底上，并将所述电介质膜退火 处理室。 特别地，电介质膜可以由Ta 2 O 5形成。 还公开了用于形成电介质膜的系统。

公开(公告)号：US5910218A

公开(公告)日：1999-06-08

申请号：US707904

申请日：1996-09-12

申请人： Young-wook Park ,  Moon-yong Lee ,  Kyung-hun Kim ,  In-sung Park

发明人： Young-wook Park ,  Moon-yong Lee ,  Kyung-hun Kim ,  In-sung Park

IPC分类号： C23C16/48 ,  C23C16/40 ,  C23C16/46 ,  C23C16/56 ,  H01L21/02 ,  H01L21/285 ,  H01L21/31 ,  H01L21/314 ,  H01L21/316 ,  H01L21/822 ,  H01L21/8242 ,  H01L27/04 ,  H01L27/108 ,  C23C16/00

CPC分类号： C23C16/56 ,  C23C16/405 ,  C23C16/46 ,  H01L21/31604 ,  H01L21/31691 ,  H01L28/40 ,  H01L28/55

摘要： A method form forming a dielectric film on a substrate includes the steps of placing the substrate in a process chamber wherein said substrate is isolated from an external environment, depositing the dielectric film on the substrate in the process chamber, and annealing the dielectric film in said process chamber. In particular, the dielectric film can be formed from Ta.sub.2 O.sub.5. Systems for forming the dielectric film are also disclosed.

摘要翻译： 在衬底上形成电介质膜的方法形式包括以下步骤：将衬底放置在处理室中，其中所述衬底与外部环境隔离，将电介质膜沉积在处理室中的衬底上，并将所述电介质膜退火 处理室。 特别地，电介质膜可以由Ta 2 O 5形成。 还公开了用于形成电介质膜的系统。

公开(公告)号：US07217669B2

公开(公告)日：2007-05-15

申请号：US10888838

申请日：2004-07-12

申请人： Han-mei Choi ,  Sung-tae Kim ,  Young-wook Park ,  Young-sun Kim ,  Ki-chul Kim ,  In-sung Park

发明人： Han-mei Choi ,  Sung-tae Kim ,  Young-wook Park ,  Young-sun Kim ,  Ki-chul Kim ,  In-sung Park

IPC分类号： H01L21/31

CPC分类号： H01L21/02356 ,  C23C16/405 ,  C23C16/452 ,  C23C16/56 ,  H01L21/02183 ,  H01L21/02271 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/31604

摘要： A method of forming a dielectric film composed of metal oxide under an atmosphere of activated vapor containing oxygen. In the method of forming the dielectric film, a metal oxide film is formed on a semiconductor substrate using a metal organic precursor and O2 gas while the semiconductor substrate is exposed under activated vapor atmosphere containing oxygen, and then, the metal oxide film is annealed while the semiconductor substrate is exposed under activated vapor containing oxygen. The annealing may take place in situ with the formation of the metal oxide film, at the same or substantially the same temperature as the metal oxide forming, and/or at least one of a different pressure, oxygen concentration, or oxygen flow rate as the metal oxide forming.

摘要翻译： 在含氧活性蒸气气氛下形成由金属氧化物构成的电介质膜的方法。 在形成电介质膜的方法中，使用金属有机前体和O 2 O 2气体在半导体衬底上形成金属氧化物膜，同时半导体衬底在含有氧的活性气氛下暴露，然后 在半导体衬底在含有氧气的活性蒸气下暴露的同时对金属氧化物膜进行退火。 退火可以在与形成金属氧化物相同或基本上相同的温度下形成金属氧化物膜，和/或至少一种不同的压力，氧浓度或氧气流速的情况下进行，如 金属氧化物形成。

公开(公告)号：US06800570B2

公开(公告)日：2004-10-05

申请号：US10131473

申请日：2002-04-25

申请人： Han-mei Choi ,  Sung-tae Kim ,  Young-wook Park ,  Young-sun Kim ,  Ki-chul Kim ,  In-sung Park

发明人： Han-mei Choi ,  Sung-tae Kim ,  Young-wook Park ,  Young-sun Kim ,  Ki-chul Kim ,  In-sung Park

IPC分类号： H01L2131

CPC分类号： H01L21/02356 ,  C23C16/405 ,  C23C16/452 ,  C23C16/56 ,  H01L21/02183 ,  H01L21/02271 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/31604

摘要： A method of forming a dielectric film composed of metal oxide under an atmosphere of activated vapor containing oxygen. In the method of forming the dielectric film, a metal oxide film is formed on a semiconductor substrate using a metal organic precursor and O2 gas while the semiconductor substrate is exposed under activated vapor atmosphere containing oxygen, and then, the metal oxide film is annealed while the semiconductor substrate is exposed under activated vapor containing oxygen. The annealing may take place in situ with the formation of the metal oxide film, at the same or substantially the same temperature as the metal oxide forming, and/or at at least one of a different pressure, oxygen concentration, or oxygen flow rate as the metal oxide forming.

公开(公告)号：US5939131A

公开(公告)日：1999-08-17

申请号：US874614

申请日：1997-06-13

申请人： Kyung-hoon Kim ,  Kab-jin Nam ,  In-sung Park ,  Young-wook Park

发明人： Kyung-hoon Kim ,  Kab-jin Nam ,  In-sung Park ,  Young-wook Park

IPC分类号： H01L27/04 ,  H01L21/02 ,  H01L21/314 ,  H01L21/316 ,  H01L21/822 ,  H01L21/8242 ,  H01L27/108 ,  B05P5/12

CPC分类号： H01L28/40 ,  H01L21/31604

摘要： A method for forming a microelectronic capacitor includes the steps of forming a first conductive layer on a substrate and forming an oxide reducing layer on the first conductive layer opposite the substrate wherein the oxide reducing layer reduces oxidation of the first conductive layer. An oxide layer is formed on the oxide reducing layer opposite the substrate, and a dielectric layer is formed on the oxide layer opposite the substrate wherein the dielectric layer has a dielectric constant that is higher than a dielectric constant of the oxide reducing layer, and higher than a dielectric constant of the oxide layer. In addition, a second conductive layer is formed on the dielectric layer opposite the substrate. Related structures are also discussed.

摘要翻译： 一种形成微电子电容器的方法包括以下步骤：在衬底上形成第一导电层，并在与衬底相对的第一导电层上形成氧化物还原层，其中氧化物还原层减少第一导电层的氧化。 在与衬底相对的氧化物还原层上形成氧化物层，并且在与衬底相对的氧化物层上形成介电层，其中介电层的介电常数高于氧化物还原层的介电常数，并且更高 比氧化物层的介电常数大。 此外，在与衬底相对的电介质层上形成第二导电层。 还讨论了相关结构。

公开(公告)号：US20050064660A1

公开(公告)日：2005-03-24

申请号：US10968233

申请日：2004-10-19

申请人： Sang-jeong Oh ,  Yeong-kwan Kim ,  Seung-hwan Lee ,  Dong-chan Kim ,  Young-wook Park

发明人： Sang-jeong Oh ,  Yeong-kwan Kim ,  Seung-hwan Lee ,  Dong-chan Kim ,  Young-wook Park

IPC分类号： H01L21/283 ,  H01L21/02 ,  H01L21/285 ,  H01L21/768 ,  H01L21/8242 ,  H01L23/485 ,  H01L21/44

CPC分类号： H01L27/10855 ,  H01L21/28525 ,  H01L21/76877 ,  H01L21/76895 ,  H01L23/485 ,  H01L28/60 ,  H01L28/90 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention provides integrated circuit devices that include a semiconductor substrate having a semiconductor region of first conductivity type therein extending adjacent the surface of the substrate. The device further includes an electrically insulating layer with a contact hole in it that exposes the semiconductor region of first conductivity type on the surface of the semiconductor substrate. The device still further includes a poly-Si1-xGex conductive plug of first conductivity type that extends in the contact hole and is electrically connected to the semiconductor region of first conductivity type is provided. Related methods of fabricating integrated circuit devices are also provided.

摘要翻译： 本发明提供了一种集成电路器件，其包括半导体衬底，该半导体衬底具有第一导电类型的半导体区域，该半导体区域在衬底的表面附近延伸。 该器件还包括其中具有接触孔的电绝缘层，其在半导体衬底的表面上暴露出第一导电类型的半导体区域。 该装置还包括在接触孔中延伸并与第一导电类型的半导体区域电连接的第一导电类型的多晶Si1-xGex导电插塞。 还提供了制造集成电路器件的相关方法。

公开(公告)号：US06828616B2

公开(公告)日：2004-12-07

申请号：US10012116

申请日：2001-11-13

申请人： Sang-jeong Oh ,  Yeong-kwan Kim ,  Seung-hwan Lee ,  Dong-chan Kim ,  Young-wook Park

发明人： Sang-jeong Oh ,  Yeong-kwan Kim ,  Seung-hwan Lee ,  Dong-chan Kim ,  Young-wook Park

IPC分类号： H01L27108

CPC分类号： H01L27/10855 ,  H01L21/28525 ,  H01L21/76877 ,  H01L21/76895 ,  H01L23/485 ,  H01L28/60 ,  H01L28/90 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention provides an integrated circuit device that include a semiconductor substrate having a semiconductor region of first conductivity type therein extending adjacent the surface of the substrate. The device further includes an electrically insulating layer with a contact hole in it that exposes the semiconductor region of first conductivity type on the surface of the semiconductor substrate. The device still further includes a poly-Si1−xGex conductive plug of first conductivity type that extends in the contact hole and is electrically connected to the semiconductor region of first conductivity type is provided.

摘要翻译： 本发明提供了一种集成电路器件，其包括半导体衬底，该半导体衬底具有与衬底表面相邻的第一导电类型的半导体区域。 该器件还包括其中具有接触孔的电绝缘层，其在半导体衬底的表面上暴露出第一导电类型的半导体区域。 该装置还包括在接触孔中延伸并与第一导电类型的半导体区域电连接的第一导电类型的多晶Si1-xGex导电插塞。

公开(公告)号：US06468924B2

公开(公告)日：2002-10-22

申请号：US09871430

申请日：2001-05-31

申请人： Seung-hwan Lee ,  Yeong-kwan Kim ,  Dong-chan Kim ,  Young-wook Park

发明人： Seung-hwan Lee ,  Yeong-kwan Kim ,  Dong-chan Kim ,  Young-wook Park

IPC分类号： H01L2131

CPC分类号： H01L21/0228 ,  C23C16/34 ,  C23C16/345 ,  C23C16/402 ,  C23C16/403 ,  C23C16/405 ,  C23C16/409 ,  C23C16/45531 ,  C23C16/45542 ,  H01L21/02164 ,  H01L21/02178 ,  H01L21/02183 ,  H01L21/02186 ,  H01L21/02194 ,  H01L21/02197 ,  H01L21/02274 ,  H01L21/3185

摘要： Methods of forming thin films include forming a first layer comprising a first element that is chemisorbed to a surface of a substrate, by exposing the surface to a first source gas having molecules therein that comprise the first element and a halogen. A step is then performed to expose the first layer to an activated hydrogen gas so that halogens associated with the first layer become bound to hydrogen provided by the activated hydrogen gas. The first layer may then be converted to a thin film comprising the first element and a second element, by exposing a surface of the first layer to a second source gas having molecules therein that comprise the second element.

公开(公告)号：US06416584B1

公开(公告)日：2002-07-09

申请号：US09350407

申请日：1999-07-08

申请人： Seok-jun Won ,  Young-wook Park ,  Yong-woo Hyung

发明人： Seok-jun Won ,  Young-wook Park ,  Yong-woo Hyung

IPC分类号： C23C1600

CPC分类号： C23C16/56 ,  C23C16/405

摘要： An apparatus for forming a film on a substrate includes a reaction chamber and gas supply lines. The gas supply lines supply gases for depositing and annealing the film. Depositing a dielectric film and annealing the dielectric film are performed in situ using the reaction chamber. Thus, the time required for forming the dielectric film is shortened, improving the productivity. Also, deposition and annealing of the dielectric film are performed in the same reaction chamber, so that less area is required for manufacturing equipment.

摘要翻译： 在基板上形成膜的装置包括反应室和气体供给管线。 气体供应管线供应用于沉积和退火膜的气体。 使用反应室原位进行沉积介电膜并退火介电膜。 因此，缩短了形成电介质膜所需的时间，提高了生产率。 此外，电介质膜的沉积和退火在相同的反应室中进行，因此制造设备需要较少的面积。

公开(公告)号：US06207489B1

公开(公告)日：2001-03-27

申请号：US09393186

申请日：1999-09-10

申请人： Kab-jin Nam ,  Seok-jun Won ,  Ki-yeon Park ,  Yong-woo Hyung ,  Young-wook Park

发明人： Kab-jin Nam ,  Seok-jun Won ,  Ki-yeon Park ,  Yong-woo Hyung ,  Young-wook Park

IPC分类号： H01L218242

CPC分类号： H01L21/02183 ,  C03C23/0075 ,  H01L21/02271 ,  H01L21/0231 ,  H01L21/02315 ,  H01L21/02337 ,  H01L21/31604 ,  H01L27/1085 ,  H01L28/56

摘要： A method for manufacturing a capacitor having a dielectric film formed of a tantalum oxide film. The method includes forming a lower electrode that is electrically connected to an active region of a semiconductor substrate. A pre-treatment film including a component selected from a group consisting of silicon oxide, silicon nitride, and combinations thereof, is formed on the surface of the lower electrode. A dielectric film is formed on the pre-treatment film using a Ta precursor. The dielectric film includes a first dielectric layer deposited at a first temperature selected from a designated temperature range, and a second dielectric layer deposited at a second temperature different from the first temperature and selected from the same designated temperature range. A thermal treatment is thereafter performed on the dielectric film in an oxygen atmosphere.

摘要翻译： 一种制造具有由氧化钽膜形成的电介质膜的电容器的方法。 该方法包括形成电连接到半导体衬底的有源区的下电极。 在下电极的表面上形成包括选自氧化硅，氮化硅及其组合的组分的预处理膜。 使用Ta前体在预处理膜上形成电介质膜。 电介质膜包括在选自指定温度范围的第一温度下沉积的第一介电层和在与第一温度不同的第二温度下沉积并选自相同指定温度范围的第二电介质层。 此后在氧气氛中对电介质膜进行热处理。