公开(公告)号：US06977213B1

公开(公告)日：2005-12-20

申请号：US10928612

申请日：2004-08-27

申请人： Yu-Ying Tsai ,  Shih-Ming Chen ,  Kuo-Wei Lin

发明人： Yu-Ying Tsai ,  Shih-Ming Chen ,  Kuo-Wei Lin

IPC分类号： H01L21/44 ,  H01L21/60 ,  H01L23/485

CPC分类号： H01L24/12 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L2224/0401 ,  H01L2224/05552 ,  H01L2224/05558 ,  H01L2224/05572 ,  H01L2224/05599 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/13012 ,  H01L2224/13099 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01087 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/30107 ,  H01L2924/351 ,  H01L2924/00012 ,  H01L2924/00

摘要： Disclosed herein are a method of manufacturing a solder bump on a semiconductor device, a solder bump structure formed on a substrate, and an intermediate solder bump structure. In one embodiment, the method includes creating a bonding pad over a semiconductor substrate, and placing a mask layer over the substrate and the bonding pad. The method also includes forming an opening in the mask layer having a primary solder mold and at least one secondary solder mold joined with the primary mold, where the opening exposes a portion of the bonding pad. In this embodiment, the method further includes filling the primary solder mold and the at least one secondary solder mold with solder material to form corresponding primary and at least one secondary solder columns in electrical contact with the bonding pad. The method also includes removing the mask layer after the filling of the solder molds with the solder material. The method still further includes reflowing the solder material to form a primary solder bump from the solder material of the primary solder column and at least a portion of the solder material from the at least one secondary solder column through cohesion of the solder material from the at least one secondary solder column to the primary solder column when melted.

摘要翻译： 本文公开了一种在半导体器件上制造焊料凸块的方法，形成在基板上的焊料凸块结构和中间焊料凸块结构。 在一个实施例中，该方法包括在半导体衬底上形成接合焊盘，并将掩模层放置在衬底和焊盘上。 该方法还包括在掩模层中形成具有初级焊料模具的开口和与初级模具连接的至少一个次级焊接模具，其中开口暴露焊接区的一部分。 在该实施例中，该方法还包括用焊料材料填充主焊料模具和至少一个二次焊接模具，以形成与焊盘电接触的相应的初级和至少一个次级焊料柱。 该方法还包括在用焊料材料填充焊料模具之后去除掩模层。 该方法还包括回流焊料材料以从主焊料柱的焊料材料形成主要焊料凸点，并且通过焊料材料与焊料的内聚力从至少一个辅助焊料柱形成至少一部分焊料材料 当熔化时，至少一个辅助焊料柱到主焊料柱。

公开(公告)号：US07884471B2

公开(公告)日：2011-02-08

申请号：US11306015

申请日：2005-12-14

申请人： Yu-Ying Tsai ,  Shih-Ming Chen ,  Kuo-Wei Lin

发明人： Yu-Ying Tsai ,  Shih-Ming Chen ,  Kuo-Wei Lin

IPC分类号： H01L29/40

CPC分类号： H01L24/12 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L2224/0401 ,  H01L2224/05552 ,  H01L2224/05558 ,  H01L2224/05572 ,  H01L2224/05599 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/13012 ,  H01L2224/13099 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01087 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/30107 ,  H01L2924/351 ,  H01L2924/00012 ,  H01L2924/00

摘要： Disclosed herein are intermediate and solder bump structures. In one embodiment, a structure comprises a primary solder column comprising primary solder material and configured to electrically contact a bonding pad on a semiconductor substrate. The structure also comprises at least one secondary solder column comprising secondary solder material in electrical contact with the primary solder column, the at least one secondary column having a height and volume less than a height and volume of the primary solder column. In such structures, the primary solder column is further configured to form a primary solder bump comprising the primary solder material and at least a portion of the secondary solder material through cohesion from the at least one secondary solder column when the intermediate structure undergoes a reflow process.

摘要翻译： 本文公开了中间和焊料凸块结构。 在一个实施例中，结构包括主焊料柱，其包括主焊料材料并且被配置为电接触半导体衬底上的焊盘。 该结构还包括至少一个辅助焊料柱，其包括与主焊料柱电接触的次要焊料材料，所述至少一个第二柱具有小于主焊料柱的高度和体积的高度和体积。 在这种结构中，主焊料柱进一步构造成当中间结构经历回流工艺时，通过与至少一个次级焊料柱的内聚形成包括主焊料材料和至少一部分辅助焊料材料的主要焊料凸块 。

公开(公告)号：US20060199300A1

公开(公告)日：2006-09-07

申请号：US11306015

申请日：2005-12-14

申请人： Yu-Ying Tsai ,  Shih-Ming Chen ,  Kuo-Wei Lin

发明人： Yu-Ying Tsai ,  Shih-Ming Chen ,  Kuo-Wei Lin

IPC分类号： H01L21/00 ,  H01L23/48

CPC分类号： H01L24/12 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L2224/0401 ,  H01L2224/05552 ,  H01L2224/05558 ,  H01L2224/05572 ,  H01L2224/05599 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/13012 ,  H01L2224/13099 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01087 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/30107 ,  H01L2924/351 ,  H01L2924/00012 ,  H01L2924/00

摘要： Disclosed herein are intermediate and solder bump structures. In one embodiment, a structure comprises a primary solder column comprising primary solder material and configured to electrically contact a bonding pad on a semiconductor substrate. The structure also comprises at least one secondary solder column comprising secondary solder material in electrical contact with the primary solder column, the at least one secondary column having a height and volume less than a height and volume of the primary solder column. In such structures, the primary solder column is further configured to form a primary solder bump comprising the primary solder material and at least a portion of the secondary solder material through cohesion from the at least one secondary solder column when the intermediate structure undergoes a reflow process.

摘要翻译： 本文公开了中间和焊料凸块结构。 在一个实施例中，结构包括主焊料柱，其包括主焊料材料并且被配置为电接触半导体衬底上的焊盘。 该结构还包括至少一个辅助焊料柱，其包括与主焊料柱电接触的次要焊料材料，所述至少一个第二柱具有小于主焊料柱的高度和体积的高度和体积。 在这种结构中，主焊料柱进一步构造成当中间结构经历回流工艺时，通过与至少一个次级焊料柱的内聚形成包括主焊料材料和至少一部分辅助焊料材料的主要焊料凸块 。

公开(公告)号：US20060285433A1

公开(公告)日：2006-12-21

申请号：US11155635

申请日：2005-06-20

申请人： Jing-Tang Yang ,  Kuo-Wei Lin

发明人： Jing-Tang Yang ,  Kuo-Wei Lin

IPC分类号： B01F5/02 ,  B81B1/00

CPC分类号： B01F13/0059 ,  B01F5/0646 ,  B01F5/0647 ,  B01F5/0655 ,  B81B2201/051

摘要： The present invention discloses a fluidic mixer of serpentine channel incorporated with staggered sudden-expansion and convergent cross sections, which comprises a flat cover and a channel body. The channel body further comprises two L-type mixer inlets, a mixing channel, and two L-type mixer outlets. The configuration of the mixing channel is a single serpentine channel incorporated with staggered sudden-expansion and convergent cross sections, wherein the serpentine structure and the sudden-expansion cross sections induces split flows, which further enable the fluid to stretch and fold so that the contact area within the fluid can be increased. The convergence after sudden expansion in cross section is to prepare the next action of sudden expansion, and such an iterative structure can obviously enhance the mixing effect. The present invention has the following characteristics: planar structure, which enables the measurement and fabrication, particularly the fabrication of micro mixing channel, to be easily undertaken; L-type mixer inlets and outlets, which enables the connection between the mixing channel and external channels to be robust so that the linkage and encapsulation of the micro mixing channel will be advantaged thereby; single-channel design, which enables the flow resistance not to increase owing to the mixing action, and which also enables the working fluid to be able to involve two-phase fluids containing suspension solid particles; low pressure drop; and no bulb residence inside the mixing channel.

摘要翻译： 本发明公开了一种具有交错的突然膨胀和会聚横截面的蛇形通道的流体混合器，其包括平的盖和通道体。 通道体还包括两个L型混合器入口，混合通道和两个L型混合器出口。 混合通道的构造是单一的蛇形通道，并入有交错的突然膨胀和会聚横截面，其中蛇形结构和突然膨胀横截面引起分流，这进一步使得流体能够拉伸和折叠，使得接触 流体内的区域可以增加。 横截面突然膨胀后的收敛是准备下一次突然膨胀的动作，这种迭代结构可以显着提高混合效果。 本发明具有以下特征：能够容易地进行测量和制造，特别是微混合通道的制造的平面结构; L型混合器入口和出口，其使得混合通道和外部通道之间的连接是稳固的，从而有利于微混合通道的连接和封装; 单通道设计，这使得流动阻力由于混合作用而不会增加，并且还使得工作流体能够涉及含有悬浮固体颗粒的两相流体; 低压降 混合通道内没有灯泡。

公开(公告)号：US20060128135A1

公开(公告)日：2006-06-15

申请号：US11012032

申请日：2004-12-14

申请人： Kuo-Wei Lin

发明人： Kuo-Wei Lin

IPC分类号： H01L21/44

CPC分类号： H01L24/13 ,  H01L24/11 ,  H01L24/81 ,  H01L2224/0361 ,  H01L2224/03912 ,  H01L2224/05001 ,  H01L2224/05009 ,  H01L2224/05022 ,  H01L2224/05023 ,  H01L2224/05027 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05568 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/1147 ,  H01L2224/1308 ,  H01L2224/13082 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/1357 ,  H01L2224/136 ,  H01L2224/8121 ,  H01L2224/81815 ,  H01L2924/00013 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/30107 ,  H01L2224/13099 ,  H01L2924/00014

摘要： It is an object of the present invention to provide a method for solder bump formation using a combination of eutectic and high lead solders. The present invention provides a method for improving a solder bump composition for a flip chip.

公开(公告)号：US06956292B2

公开(公告)日：2005-10-18

申请号：US10613694

申请日：2003-07-03

申请人： Yang-Tung Fan ,  Cheng-Yu Chu ,  Fu-Jier Fan ,  Shih-Jane Lin ,  Chiou-Shian Peng ,  Yen-Ming Chen ,  Kuo-Wei Lin

发明人： Yang-Tung Fan ,  Cheng-Yu Chu ,  Fu-Jier Fan ,  Shih-Jane Lin ,  Chiou-Shian Peng ,  Yen-Ming Chen ,  Kuo-Wei Lin

IPC分类号： H01L21/60 ,  H01L23/48

CPC分类号： H01L24/11 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05022 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05171 ,  H01L2224/05572 ,  H01L2224/05644 ,  H01L2224/05655 ,  H01L2224/1147 ,  H01L2224/1191 ,  H01L2224/13099 ,  H01L2224/45144 ,  H01L2924/0002 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01084 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/00 ,  H01L2224/05552 ,  H01L2924/00014 ,  H01L2924/013

摘要： A new process is provided which is an extension and improvement of present processing for the creation of a solder bump. After the layers of Under Bump Metal and a layer of solder metal have been created in patterned and etched format and overlying the contact pad, following a conventional processing sequence, a layer of polyimide is deposited. The solder flow is performed using the thickness of the deposited layer of polyimide to control the height of the column underneath the reflown solder.

摘要翻译： 提供了一种新的工艺，其是用于产生焊料凸块的当前处理的延伸和改进。 在图形化和蚀刻形式下形成了凹凸金属层和焊料金属层之后，按照传统的处理顺序，沉积了一层聚酰亚胺。 使用聚酰亚胺沉积层的厚度来进行焊料流动，以控制在重熔焊料下面的柱的高度。

公开(公告)号：US06534396B1

公开(公告)日：2003-03-18

申请号：US09686107

申请日：2000-10-10

申请人： Fu-Jier Fahn ,  Kuo-Wei Lin ,  James Chen ,  Eugene Cheu ,  Chien-Shian Peng ,  Gilbert Fan ,  Kenneth Lin

发明人： Fu-Jier Fahn ,  Kuo-Wei Lin ,  James Chen ,  Eugene Cheu ,  Chien-Shian Peng ,  Gilbert Fan ,  Kenneth Lin

IPC分类号： H01L214763

CPC分类号： H01L24/11 ,  H01L21/76801 ,  H01L21/76802 ,  H01L21/76819 ,  H01L2224/05001 ,  H01L2224/05008 ,  H01L2224/05022 ,  H01L2224/05024 ,  H01L2224/05569 ,  H01L2224/05572 ,  H01L2224/13022 ,  H01L2224/13099 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01051 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/15787 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/00

摘要： Within a method for forming a microelectronic fabrication there is first provided a substrate. There is then formed over the substrate a patterned conductor layer having a topographic variation at a periphery of the patterned conductor layer. There is then formed over the substrate and passivating the topographic variation at the periphery of the patterned conductor layer a planarizing passivation layer formed of a thermally reflowable material. There is then formed upon the planarizing passivation layer a dimensionally stabilizing layer. Finally, there is then thermally annealed the microelectronic fabrication to form from the planarizing passivation layer a thermally annealed planarizing passivation layer. By employing formed upon the planarizing passivation layer the dimensionally stabilizing layer, there is attenuated within the thermally annealed planarizing passivation layer replication of the topographic variation at the periphery of the patterned conductor layer.

摘要翻译： 在形成微电子制造的方法中，首先提供衬底。 然后在衬底上形成图案化导体层，该图案化导体层在图案化导体层的外围具有地形变化。 然后形成在衬底上并钝化图案化导体层的周边的地形变化，由可热再热材料形成的平坦化钝化层。 然后在平坦化钝化层上形成尺寸稳定层。 最后，然后将微电子制造热退火，从平坦化钝化层形成热退火的平坦化钝化层。 通过在平坦化钝化层上形成的尺寸稳定层，在图案化导体层的周边处的热退火的平坦化钝化层复制中的地形变化处被衰减。

公开(公告)号：US20050258536A1

公开(公告)日：2005-11-24

申请号：US10851576

申请日：2004-05-21

申请人： Kuo-Wei Lin ,  Hsaio-Ping Chang

发明人： Kuo-Wei Lin ,  Hsaio-Ping Chang

IPC分类号： H01L21/48 ,  H01L21/60 ,  H01L23/34 ,  H01L23/373 ,  H01L23/498

CPC分类号： H01L23/3735 ,  H01L21/4871 ,  H01L23/49816 ,  H01L24/81 ,  H01L24/97 ,  H01L2224/05001 ,  H01L2224/05026 ,  H01L2224/05568 ,  H01L2224/16 ,  H01L2224/73253 ,  H01L2224/81801 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01015 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2224/05599 ,  H01L2224/05099

摘要： An IC chip heat sink and method for dissipating heat from an integrated circuit (IC) chip, is disclosed. In a typical embodiment, the IC chip heat sink is fabricated by depositing a metal seed layer on the backside of a semiconductor wafer having multiple IC chips fabricated thereon. A photoresist layer is then deposited on the seed layer and patterned to define multiple photoresist openings. Multiple columns are formed on the seed layer by the electrochemical plating of a metal in the photoresist openings. Finally, the photoresist is stripped from the seed layer to define the multiple columns, which extend from the seed layer, and a network of heat sink channels between the columns. During functioning of the chip, heat is dissipated from the chip through the heat sink.

摘要翻译： 公开了一种用于从集成电路（IC）芯片散热的IC芯片散热器和方法。 在典型的实施例中，通过在其上制造多个IC芯片的半导体晶片的背面上沉积金属晶种层来制造IC芯片散热器。 然后将光致抗蚀剂层沉积在种子层上并图案化以限定多个光致抗蚀剂开口。 通过在光致抗蚀剂开口中的金属的电化学电镀，在种子层上形成多个柱。 最后，从种子层剥离光致抗蚀剂以限定从种子层延伸的多个柱和在柱之间的散热器通道网络。 在芯片运行期间，散热片从芯片散热通过散热片。

公开(公告)号：US06756184B2

公开(公告)日：2004-06-29

申请号：US09976067

申请日：2001-10-12

申请人： Chiou-Shian Peng ,  Euegene Chu ,  Alex Fahn ,  Kenneth Lin ,  Gilbert Fane ,  James Chen ,  Kuo-Wei Lin

发明人： Chiou-Shian Peng ,  Euegene Chu ,  Alex Fahn ,  Kenneth Lin ,  Gilbert Fane ,  James Chen ,  Kuo-Wei Lin

IPC分类号： G03F700

CPC分类号： H01L24/11 ,  H01L2224/05001 ,  H01L2224/05022 ,  H01L2224/05572 ,  H01L2224/11462 ,  H01L2224/1147 ,  H01L2224/11502 ,  H01L2224/11849 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/00014 ,  H01L2224/13099 ,  H01L2224/29099 ,  H01L2224/11901 ,  H01L2224/1146

摘要： A method of making electrically conductive bumps of improved height on a semiconductor device. The method includes steps of depositing an under bump metallurgy over a semiconductor device onto a contact pad; depositing and patterning a photoresist layer to provide an opening over the under bump metallurgy; depositing a first electrically conductive material into the opening in the photoresist layer; depositing a second electrically conductive material over the first electrically conductive material; removing the photoresist layer and the excess under bump metallurgy; applying a flux agent to the top surface of the second electrically conductive material; hard baking the semiconductor device to remove any oxide; dipping a portion of the semiconductor device in an electroless plating solution; removing the semiconductor device from the electroless plating solution; and reflowing the electrically conductive materials to provide a bump of improved height on the semiconductor device.

摘要翻译： 一种在半导体器件上制造改进的高度的导电凸块的方法。 该方法包括以下步骤：在半导体器件上沉积凸块下的金属到接触焊盘上; 沉积和图案化光致抗蚀剂层以在凸块下冶金上提供开口; 将第一导电材料沉积到光致抗蚀剂层的开口中; 在所述第一导电材料上沉积第二导电材料; 去除光致抗蚀剂层和过量的凸块下冶金; 将助熔剂施加到所述第二导电材料的顶表面; 硬烘烤半导体器件去除任何氧化物; 将半导体器件的一部分浸入化学镀溶液中; 从化学镀液中除去半导体器件; 并且回流所述导电材料以在所述半导体器件上提供改善高度的突起。

公开(公告)号：US06482669B1

公开(公告)日：2002-11-19

申请号：US09867379

申请日：2001-05-30

申请人： Yang-Tung Fan ,  Chiou-Shian Peng ,  Cheng-Yu Chu ,  Shih-Jane Lin ,  Yen-Ming Chen ,  Fu-Jier Fan ,  Kuo-Wei Lin

发明人： Yang-Tung Fan ,  Chiou-Shian Peng ,  Cheng-Yu Chu ,  Shih-Jane Lin ,  Yen-Ming Chen ,  Fu-Jier Fan ,  Kuo-Wei Lin

IPC分类号： H01L2100

CPC分类号： H01L27/14685 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14645 ,  H01L31/02162 ,  H01L31/02327

摘要： Disclosed is an ordered microelectronic fabrication sequence in which color filters are formed by conformal deposition directly onto a photodetector array of a CCD, CID, or CMOS imaging device to create a concave-up pixel surface, and, overlayed with a high transmittance planarizing film of specified index of refraction and physical properties which optimize light collection to the photodiode without additional conventional microlenses. The optically flat top surface serves to encapsulate and protect the imager from chemical and thermal cleaning treatment damage, minimizes topographical underlayer variations which aberrate or cause reflection losses of images formed on non-planar surfaces, and, obviates residual particle inclusions induced during dicing and packaging. A CCD imager is formed by photolithographically patterning a planar-array of photodiodes on a semiconductor substrate. The photodiode array is provided with metal photoshields, passivated, and, color filters are formed thereon. A transparent encapsulant is deposited to planarize the color filter layer and completes the solid-state color image-forming device without conventional convex microlenses.

摘要翻译： 公开了一种有序的微电子制造顺序，其中滤色器通过直角沉积直接形成在CCD，CID或CMOS成像装置的光电检测器阵列上以形成凹入像素表面，并且覆盖有高透光率平面化膜 指定的折射率和物理性质，其优化光收集到光电二极管而不需要额外的常规微透镜。 光学平坦的顶表面用于封装和保护成像仪免受化学和热清洁处理损伤，最小化形成在非平面表面上的图像的像差或引起反射损失的形貌底层变化，并避免在切割和包装期间引起的残留颗粒夹杂物 。 通过在半导体衬底上光刻地构图光电二极管平面阵列来形成CCD成像器。 光电二极管阵列设置有金属遮光罩，钝化，并且在其上形成滤色器。 沉积透明密封剂以平坦化滤色器层并完成固态彩色图像形成装置，而不需要常规的凸起的微透镜。