摘要:
A linear processing system having an entry loadlock, a first multi-pass processing chamber coupled to the entry loadlock, the first multi-pass processing chamber having a sputtering magnetron arrangement and configured to house a single substrate carrier for performing a multi-pass processing; a single-pass chamber coupled to the first multi-pass processing chamber and having a plurality of magnetron arrangements arranged along a carrier travel direction, the single-pass chamber configured to house multiple carriers arranged serially in a row and configured for a single-pass processing; a second multi-pass processing chamber coupled to the single-pass processing chamber, the second multi-pass processing chamber having a sputtering magnetron arrangement and configured to house a single substrate carrier for performing a multi-pass processing; and an exit loadlock chamber coupled to the second multi-pass processing chamber.
摘要:
A processing system is provided, including a vacuum enclosure having a plurality of process windows and a continuous track positioned therein; a plurality of processing chambers attached sidewalls of the vacuum enclosures, each processing chamber about one of the process windows; a loadlock attached at one end of the vacuum enclosure and having a loading track positioned therein; at least one gate valve separating the loadlock from the vacuum enclosure; a plurality of substrate carriers configured to travel on the continuous track and the loading track; at least one track exchanger positioned within the vacuum enclosure, the track exchangers movable between a first position, wherein substrate carriers are made to continuously move on the continuous track, and a second position wherein the substrate carriers are made to transfer between the continuous track and the loading track.
摘要:
A system for processing substrates in plasma chambers, such that all substrates transport and loading/unloading operations are performed in atmospheric environment, but processing is performed in vacuum environment. The substrates are transported throughout the system on carriers. The system's chambers are arranged linearly, such that carriers move from one chamber directly to the next. A conveyor, placed above or below the system's chambers, returns the carriers to the system's entry area after processing is completed. Loading and unloading of substrates may be performed at one side of the system, or loading can be done at the entry side and unloading at the exit side.
摘要:
Disclosed is a substrate processing system with a magnetic conduit configuration to improve the movement of a substrate carrier within the system. The configuration specifically provides for safe, secure movement of a carrier between multiple levels of a substrate processing system by using magnetic conduits to redirect magnetic forces created by a linear motor, permitting the linear motor to be positioned outside of the system and in a location that will not interfere with the movement of the carrier.
摘要:
A grid for minimizing effects of ion divergence in plasma ion implant. The plasma grid is made of a flat plate having a plurality of holes, wherein the holes are arranged in a plurality of rows and a plurality of columns thereby forming beamlets of ions that diverge in one direction. A mask is used to form the implanted shapes on the wafer, wherein the holes in the mask are oriented orthogonally to the direction of beamlet divergence.
摘要:
System and method to align a substrate under a shadow mask. A substrate holder has alignment mechanism, such as rollers, that is made to abut against an alignment straight edge. The substrate is then aligned with respect to the straight edge and is chucked to the substrate holder. The substrate holder is then transported into a vacuum processing chamber, wherein it is made to abut against a mask straight edge to which the shadow mask is attached and aligned to. Since the substrate was aligned to an alignment straight edge, and since the mask is aligned to the mask straight edge that is precisely aligned to the alignment straight edge, the substrate is perfectly aligned to the mask.
摘要:
An ion implantation system having a grid assembly. The system includes a plasma source configured to provide plasma in a plasma region; a first grid plate having a plurality of apertures configured to allow ions from the plasma region to pass therethrough, wherein the first grid plate is configured to be biased by a power supply; a second grid plate having a plurality of apertures configured to allow the ions to pass therethrough subsequent to the ions passing through the first grid plate, wherein the second grid plate is configured to be biased by a power supply; and a substrate holder configured to support a substrate in a position where the substrate is implanted with the ions subsequent to the ions passing through the second grid plate.
摘要:
A system for depositing material from a target onto substrates, comprising a processing chamber; a sputtering target having length L and having sputtering material provided on front surface thereof; a magnet operable to reciprocally scan across the length L in close proximity to rear surface of the target; and a counterweight operable to reciprocally scan at same speed but opposite direction of the magnet.
摘要:
Apparatus and methods are provided that enable processing of patterned layers on substrates using a detachable mask. Unlike prior art where the mask is formed directly over the substrate, according to aspects of the invention the mask is made independently of the substrate. During use, the mask is positioned in close proximity or in contact with the substrate so as to expose only portions of the substrate to processing, e.g., sputtering or etch. Once the processing is completed, the mask is moved away from the substrate and may be used for another substrate. The substrate may be cycled for a given number of substrates and then be removed for cleaning or disposal.
摘要:
Disclosed are methods and apparatus for masking of substrates for deposition, and subsequent lifting of the mask with deposited material. Masking materials are utilized that can be used in high temperatures and vacuum environment. The masking material has minimal outgassing once inside a vacuum chamber and withstand the temperatures during deposition process. The mask is inkjeted over the wafers and, after deposition, removed using agitation, such as ultrasonic agitation, or using laser burn off.