公开(公告)号：US20170012083A1

公开(公告)日：2017-01-12

申请号：US15010450

申请日：2016-01-29

Applicant: Shih-Yuan WANG ,  Shih-Ping WANG

Inventor： Shih-Yuan WANG ,  Shih-Ping WANG

IPC: H01L27/24 ,  H01L45/00

CPC classification number: H01L27/2409 ,  H01L27/2481 ,  H01L27/249 ,  H01L45/06 ,  H01L45/08 ,  H01L45/1226 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/144 ,  H01L45/146 ,  H01L45/1608 ,  H01L45/1633 ,  H01L45/165

Abstract: Resistive RAM (RRAM) devices having increased uniformity and related manufacturing methods are described. Greater uniformity of performance across an entire chip that includes larger numbers of RRAM cells can be achieved by uniformly creating enhanced channels in the switching layers through the use of radiation damage. The radiation, according to various described embodiments, can be in the form of ions, electromagnetic photons, neutral particles, electrons, and ultrasound.

Abstract translation: 描述具有增加的均匀性和相关制造方法的电阻RAM（RRAM）装置。 通过使用辐射损伤在开关层中均匀地产生增强的通道，可以实现包括更大数量的RRAM单元的整个芯片的更高的性能均匀性。 根据各种描述的实施例，辐射可以是离子，电磁光子，中性粒子，电子和超声波的形式。

公开(公告)号：US20150357566A1

公开(公告)日：2015-12-10

申请号：US14829327

申请日：2015-08-18

Applicant: Shih-Yuan WANG ,  Shih-Ping WANG

Inventor： Shih-Yuan WANG ,  Shih-Ping WANG

IPC: H01L45/00

CPC classification number: H01L27/2409 ,  H01L27/2481 ,  H01L27/249 ,  H01L45/06 ,  H01L45/08 ,  H01L45/1226 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/144 ,  H01L45/146 ,  H01L45/1608 ,  H01L45/1633 ,  H01L45/165

Abstract: Resistive RAM (RRAM) devices having increased uniformity and related manufacturing methods are described. Greater uniformity of performance across an entire chip that includes larger numbers of RRAM cells can be achieved by uniformly creating enhanced channels in the switching layers through the use of radiation damage. The radiation, according to various described embodiments, can be in the form of ions, electromagnetic photons, neutral particles, electrons, and ultrasound.

Abstract translation: 描述具有增加的均匀性和相关制造方法的电阻RAM（RRAM）装置。 通过使用辐射损伤在开关层中均匀地产生增强的通道，可以实现包括更大数量的RRAM单元的整个芯片的更高的性能均匀性。 根据各种描述的实施例，辐射可以是离子，电磁光子，中性粒子，电子和超声波的形式。

公开(公告)号：US20160308075A1

公开(公告)日：2016-10-20

申请号：US14945003

申请日：2015-11-18

Applicant: Shih-Yuan WANG ,  Shih-Ping Wang

Inventor： Shih-Yuan WANG ,  Shih-Ping Wang

IPC: H01L31/0232 ,  H01L31/103 ,  H04B10/69 ,  H01L27/144

CPC classification number: H01L31/0236 ,  G02B1/002 ,  G02B1/005 ,  G02B6/42 ,  H01L27/1443 ,  H01L27/1446 ,  H01L27/14625 ,  H01L31/02 ,  H01L31/0232 ,  H01L31/02325 ,  H01L31/02327 ,  H01L31/02363 ,  H01L31/02366 ,  H01L31/028 ,  H01L31/035218 ,  H01L31/035281 ,  H01L31/09 ,  H01L31/103 ,  H01L31/107 ,  H01L31/1075 ,  H01L31/1804 ,  H01L31/1808 ,  H04B10/25 ,  H04B10/40 ,  H04B10/691 ,  H04B10/6971 ,  H04B10/801 ,  Y02E10/547 ,  Y02P70/521

Abstract: Techniques for enhancing the absorption of photons in semiconductors with the use of microstructures are described. The microstructures, such as holes, effectively increase the absorption of the photons. Using microstructures for absorption enhancement for silicon photodiodes and silicon avalanche photodiodes can result in bandwidths in excess of 10 Gb/s at photons with wavelengths of 850 nm, and with quantum efficiencies of approximately 90% or more. Their thickness dimensions allow them to be conveniently integrated on the same Si chip with CMOS, BiCMOS, and other electronics, with resulting packaging benefits and reduced capacitance and thus higher speeds.

Abstract translation: 描述了使用微结构增强半导体中的光子的吸收的技术。 诸如孔的微结构有效地增加了光子的吸收。 对于硅光电二极管和硅雪崩光电二极管，使用微结构进行吸收增强可以在波长为850 nm的光子上产生超过10 Gb / s的带宽，量子效率约为90％以上。 它们的厚度尺寸允许它们与CMOS，BiCMOS和其他电子元件方便地集成在同一个Si芯片上，从而实现封装优点，降低电容，从而提高速度。

公开(公告)号：US20160126381A1

公开(公告)日：2016-05-05

申请号：US14892821

申请日：2014-05-22

Applicant: Shih-Yuan WANG ,  Shih-Ping WANG

Inventor： Shih-Yuan WANG ,  Shih-Ping WANG

IPC: H01L31/0352 ,  H01L31/105 ,  H01L31/107 ,  H01L31/028

CPC classification number: H01L31/035272 ,  G02B6/122 ,  G02B6/136 ,  G02B2006/12097 ,  G02B2006/12176 ,  H01L23/66 ,  H01L31/02005 ,  H01L31/02019 ,  H01L31/022408 ,  H01L31/02327 ,  H01L31/02363 ,  H01L31/024 ,  H01L31/028 ,  H01L31/0284 ,  H01L31/0304 ,  H01L31/03046 ,  H01L31/035227 ,  H01L31/035281 ,  H01L31/054 ,  H01L31/0745 ,  H01L31/075 ,  H01L31/105 ,  H01L31/1055 ,  H01L31/107 ,  H01L31/1075 ,  H01L31/1804 ,  H01L31/184 ,  H01L31/1844 ,  H01L2223/6627 ,  Y02E10/52 ,  Y02E10/548

Abstract: Techniques for enhancing the absorption of photons in semiconductors with the use of microstructures arc described. The microstructures, such as pillars and/or holes, effectively increase the effective absorption length resulting in a greater absorption of the photons. Using microstructures for absorption enhancement for silicon photodiodes and silicon avalanche photodiodes can result in bandwidths in excess of 10 Gb/s at photons with wavelengths of 850 nm, and with quantum efficiencies of approximately 90% or more.

Abstract translation: 描述了使用微结构增强半导体中光子吸收的技术。 诸如支柱和/或孔的微结构有效地增加了有效的吸收长度，导致光子的更大的吸收。 对于硅光电二极管和硅雪崩光电二极管，使用微结构进行吸收增强可以在波长为850 nm的光子上产生超过10 Gb / s的带宽，量子效率约为90％以上。

公开(公告)号：US20170244028A1

公开(公告)日：2017-08-24

申请号：US15446626

申请日：2017-03-01

Applicant: Shih-Yuan WANG ,  Shih-Ping WANG

Inventor： Shih-Yuan WANG ,  Shih-Ping WANG

IPC: H01L45/00 ,  H01L27/24

CPC classification number: H01L45/08 ,  G11C13/0004 ,  G11C13/0007 ,  G11C2213/15 ,  G11C2213/18 ,  G11C2213/51 ,  G11C2213/56 ,  G11C2213/77 ,  H01L27/2481 ,  H01L45/1226 ,  H01L45/1233 ,  H01L45/124 ,  H01L45/146 ,  H01L45/165 ,  H01L45/1683

Abstract: Resistive RAM (RRAM) devices having increased uniformity and related manufacturing methods are described. Greater uniformity of performance across an entire chip that includes larger numbers of RRAM cells can be achieved by uniformly creating enhanced channels in the switching layers through the use of radiation damage. The radiation, according to various described embodiments, can be in the form of ions, electromagnetic photons, neutral particles, electrons, and ultrasound.

公开(公告)号：US20160254407A1

公开(公告)日：2016-09-01

申请号：US14947718

申请日：2015-11-20

Applicant: Shih-Yuan WANG ,  Shih-Ping WANG

Inventor： Shih-Yuan WANG ,  Shih-Ping WANG

IPC: H01L31/107 ,  H01L31/0236 ,  H01L31/0232 ,  H01L31/024 ,  G02B6/122 ,  H01L31/054 ,  H01L23/66 ,  H01L31/0224 ,  H01L31/18 ,  H01L31/0304 ,  H01L31/0745 ,  H01L31/028 ,  H01L31/02

CPC classification number: H01L31/035272 ,  G02B6/122 ,  G02B6/136 ,  G02B2006/12097 ,  G02B2006/12176 ,  H01L23/66 ,  H01L31/02005 ,  H01L31/02019 ,  H01L31/022408 ,  H01L31/02327 ,  H01L31/02363 ,  H01L31/024 ,  H01L31/028 ,  H01L31/0284 ,  H01L31/0304 ,  H01L31/03046 ,  H01L31/035227 ,  H01L31/035281 ,  H01L31/054 ,  H01L31/0745 ,  H01L31/075 ,  H01L31/105 ,  H01L31/1055 ,  H01L31/107 ,  H01L31/1075 ,  H01L31/1804 ,  H01L31/184 ,  H01L31/1844 ,  H01L2223/6627 ,  Y02E10/52 ,  Y02E10/548

Abstract: Techniques for enhancing the absorption of photons in semiconductors with the use of microstructures are described. The microstructures, such as pillars and/or holes, effectively increase the effective absorption length resulting in a greater absorption of the photons. Using microstructures for absorption enhancement for silicon photodiodes and silicon avalanche photodiodes can result in bandwidths in excess of 10 Gb/s at photons with wavelengths of 850 nm, and with quantum efficiencies of approximately 90% or more.

Abstract translation: 描述了使用微结构增强半导体中的光子吸收的技术。 诸如支柱和/或孔的微结构有效地增加了有效的吸收长度，导致光子的更大的吸收。 对于硅光电二极管和硅雪崩光电二极管，使用微结构进行吸收增强可以在波长为850 nm的光子上产生超过10 Gb / s的带宽，量子效率约为90％以上。

公开(公告)号：US20180375021A1

公开(公告)日：2018-12-27

申请号：US16062414

申请日：2016-12-14

Applicant: Shih-Yuan WANG ,  Shih-Ping WANG

Inventor： Shih-Yuan WANG ,  Shih-Ping WANG

IPC: H01L45/00 ,  H01L27/24

CPC classification number: H01L45/085 ,  H01L27/101 ,  H01L27/2463 ,  H01L27/2472 ,  H01L45/04 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/1266 ,  H01L45/145 ,  H01L45/146 ,  H01L45/149 ,  H01L45/1633 ,  H01L45/1641 ,  H01L45/165 ,  H01L45/1658

Abstract: Resistive RAM (RRAM) devices having increased reliability and related manufacturing methods are described. Greater reliability of RRAM cells over time can be achieved by avoiding direct contact of metal electrodes with the device switching layer. The contact can be avoided by cladding the switching layer in a material such as silicon or using electrodes that may contain metal but have regions that are adjacent the switching layer and lack free metal ions except for possible trace amounts.

公开(公告)号：US20170194522A1

公开(公告)日：2017-07-06

申请号：US15309922

申请日：2015-11-17

Applicant: Shih-Yuan WANG ,  Shih-Ping WANG

Inventor： Shih-Yuan WANG ,  Shih-Ping WANG

IPC: H01L31/0352 ,  H01L31/0236 ,  H01L31/0232 ,  H01L31/103 ,  G02B1/00 ,  H01L31/18 ,  H04B10/25 ,  H04B10/40 ,  H04B10/80 ,  H01L27/144 ,  H01L31/107

CPC classification number: H01L31/0236 ,  G02B1/002 ,  G02B1/005 ,  G02B6/42 ,  H01L27/1443 ,  H01L27/1446 ,  H01L27/14625 ,  H01L31/02 ,  H01L31/0232 ,  H01L31/02325 ,  H01L31/02327 ,  H01L31/02363 ,  H01L31/02366 ,  H01L31/028 ,  H01L31/035218 ,  H01L31/035281 ,  H01L31/09 ,  H01L31/103 ,  H01L31/107 ,  H01L31/1075 ,  H01L31/1804 ,  H01L31/1808 ,  H04B10/25 ,  H04B10/40 ,  H04B10/691 ,  H04B10/6971 ,  H04B10/801 ,  Y02E10/547 ,  Y02P70/521

Abstract: Techniques for enhancing the absorption of photons in semiconductors with the use of microstructures are described. The microstructures, such as holes, effectively increase the absorption of the photons. Using microstructures for absorption enhancement for silicon photodiodes and silicon avalanche photodiodes can result in bandwidths in excess of 10 Gb/s at photons with wavelengths of 850 nm, and with quantum efficiencies of approximately 90% or more. Their thickness dimensions allow them to be conveniently integrated on the same Si chip with CMOS, BiCMOS, and other electronics, with resulting packaging benefits and reduced capacitance and thus higher speeds.

公开(公告)号：US20160307939A1

公开(公告)日：2016-10-20

申请号：US14943898

申请日：2015-11-17

Applicant: Shih-Yuan WANG ,  Shih-Ping WANG

Inventor： Shih-Yuan WANG ,  Shih-Ping WANG

IPC: H01L27/144 ,  H01L31/103 ,  H04B10/80 ,  H01L31/028 ,  H04B10/25 ,  H04B10/40 ,  H01L31/0232 ,  H01L31/107

CPC classification number: H01L31/0236 ,  G02B1/002 ,  G02B1/005 ,  G02B6/42 ,  H01L27/1443 ,  H01L27/1446 ,  H01L27/14625 ,  H01L31/02 ,  H01L31/0232 ,  H01L31/02325 ,  H01L31/02327 ,  H01L31/02363 ,  H01L31/02366 ,  H01L31/028 ,  H01L31/035218 ,  H01L31/035281 ,  H01L31/09 ,  H01L31/103 ,  H01L31/107 ,  H01L31/1075 ,  H01L31/1804 ,  H01L31/1808 ,  H04B10/25 ,  H04B10/40 ,  H04B10/691 ,  H04B10/6971 ,  H04B10/801 ,  Y02E10/547 ,  Y02P70/521

Abstract: Techniques for enhancing the absorption of photons in semiconductors with the use of microstructures are described. The microstructures, such as holes, effectively increase the absorption of the photons. Using microstructures for absorption enhancement for silicon photodiodes and silicon avalanche photodiodes can result in bandwidths in excess of 10 Gb/s at photons with wavelengths of 850 nm, and with quantum efficiencies of approximately 90% or more. Their thickness dimensions allow them to be conveniently integrated on the same Si chip with CMOS, BiCMOS, and other electronics, with resulting packaging benefits and reduced capacitance and thus higher speeds.

公开(公告)号：US20110058245A1

公开(公告)日：2011-03-10

申请号：US12875769

申请日：2010-09-03

Applicant: Shih-Yuan WANG ,  Hsi-Rong Han ,  Chien-Ting Chan ,  Wan-Jen Tsai ,  Wei-Yuan Cheng ,  Kuo-Lung Lo

Inventor： Shih-Yuan WANG ,  Hsi-Rong Han ,  Chien-Ting Chan ,  Wan-Jen Tsai ,  Wei-Yuan Cheng ,  Kuo-Lung Lo

IPC: G02B26/00

CPC classification number: G02B26/004

Abstract: An electrowetting pixel structure includes a substrate, a hydrophobic dielectric layer, a non-polar liquid, a polar liquid, at least one electrode, and at least one contact hole. The hydrophobic dielectric layer is formed on the substrate, the non-polar liquid covers one surface of the hydrophobic dielectric layer, and the polar liquid is provided on the hydrophobic dielectric layer where the non-polar liquid and the polar liquid are immiscible. The electrode is formed on the substrate and divides the substrate into an electrode section and a non-electrode section. When a voltage is applied to the electrowetting pixel structure, the non-polar liquid contracts on the hydrophobic dielectric layer and is confined to an area substantially overlapping the non-electrode section. The contact hole is formed on the substrate at a position away from the non-electrode section of the electrowetting pixel structure.

Abstract translation: 电润湿像素结构包括基底，疏水介电层，非极性液体，极性液体，至少一个电极和至少一个接触孔。 疏水性介电层形成在基板上，非极性液体覆盖疏水性介电层的一个表面，极性液体设置在非极性液体和极性液体不混溶的疏水性介电层上。 电极形成在基板上，并将基板分成电极部分和非电极部分。 当向电润湿像素结构施加电压时，非极性液体在疏水性介电层上收缩并且被限制在与非电极部分基本重叠的区域上。 接触孔在远离电润湿像素结构的非电极部分的位置处形成在基板上。