Abstract:
A microelectronic assembly (100) includes a semiconductor chip (110, 1110) having chip contacts (112) exposed at a first face and a substrate (130, 1130) juxtaposed with a face (128, 129) of the chip (110, 1110). A conductive bond element (144) can electrically connect a first chip contact (112) with a first substrate contact (132, 1132) of the substrate, and a second conductive bond element (146) can electrically connect the first chip contact (112, 132) with a second substrate contact. The first bond element (144) can have a first end (244A, 344A) metallurgically joined to the first chip contact (112, 212A) and a second end (244B, 344B) metallurgically joined to the first substrate contact. A first end (246A, 346A) of the second bond element can be metallurgically joined to the first bond element (212A). The second bond element may or may not touch the first chip contact (112, 212A, 1212) or the substrate contact (132, 1132). A third bond element (948) can be joined to ends of first and second bond elements which are joined to substrate contacts or to chip contacts. In one embodiment, a bond element (740) can have a looped connection, having first and second ends (742, 746) joined at a first contact (732A) and a middle portion (744) joined to a second contact (712A).
Abstract:
Stacked microelectronic devices and methods of manufacturing stacked microelectronic devices are disclosed herein. In one embodiment, a method of manufacturing a microelectronic device includes forming a plurality of electrically isolated, multi-tiered metal spacers on a front side of a first microelectronic die, and attaching a back-side surface of a second microelectronic die to individual metal spacers. In another embodiment, the method of manufacturing the microelectronic device may further include forming top-tier spacer elements on front-side wire bonds of the first die.
Abstract:
Apparatuses relating generally to a microelectronic package having protection from interference are disclosed. In an apparatus thereof, a substrate has an upper surface and a lower surface opposite the upper surface and has a ground plane. A first microelectronic device is coupled to the upper surface of the substrate. Wire bond wires are coupled to the ground plane for conducting the interference thereto and extending away from the upper surface of the substrate. A first portion of the wire bond wires is positioned to provide a shielding region for the first microelectronic device with respect to the interference. A second portion of the wire bond wires is not positioned to provide the shielding region. A second microelectronic device is coupled to the substrate and located outside of the shielding region. A conductive surface is over the first portion of the wire bond wires for covering the shielding region.
Abstract:
A microelectronic assembly (100) includes a semiconductor chip (110) having chip contacts (112) exposed at a first face and a substrate (130) juxtaposed with a face (128) of the chip (110). A conductive bond element (144) can electrically connect a first chip contact (112) with a first substrate contact (132) of the substrate, and a second conductive bond element (146) can electrically connect the first chip contact (112) with a second substrate contact. The first bond element (144) can have a first end (144A) metallurgically joined to the first chip contact (112) and a second end (144B) metallurgically joined to the first substrate contact (132). A first end (246A, 346A) of the second bond element (146) can be metallurgically joined to the first bond element (144).