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公开(公告)号:CN102623440A
公开(公告)日:2012-08-01
申请号:CN201110460504.8
申请日:2011-12-31
申请人: 富士通株式会社
发明人: 赤松俊也
IPC分类号: H01L25/00 , H01L25/065 , H01L23/48 , H01L23/498 , H01L21/60 , H01L21/50
CPC分类号: H01L25/0657 , H01L21/76898 , H01L23/481 , H01L24/13 , H01L24/16 , H01L24/17 , H01L24/48 , H01L24/73 , H01L24/81 , H01L25/0652 , H01L25/50 , H01L29/0657 , H01L2224/02372 , H01L2224/0401 , H01L2224/05548 , H01L2224/05567 , H01L2224/05571 , H01L2224/05573 , H01L2224/05624 , H01L2224/11002 , H01L2224/1147 , H01L2224/13006 , H01L2224/13024 , H01L2224/13025 , H01L2224/13027 , H01L2224/1308 , H01L2224/13082 , H01L2224/131 , H01L2224/13111 , H01L2224/13144 , H01L2224/13147 , H01L2224/14181 , H01L2224/16141 , H01L2224/16147 , H01L2224/16148 , H01L2224/16238 , H01L2224/1624 , H01L2224/1703 , H01L2224/17051 , H01L2224/17181 , H01L2224/45144 , H01L2224/48095 , H01L2224/48227 , H01L2224/48599 , H01L2224/73204 , H01L2224/73207 , H01L2224/73265 , H01L2224/81136 , H01L2224/8114 , H01L2224/81192 , H01L2224/81193 , H01L2224/81815 , H01L2224/81986 , H01L2224/83102 , H01L2224/9201 , H01L2224/94 , H01L2224/96 , H01L2225/0651 , H01L2225/06513 , H01L2225/06541 , H01L2225/06555 , H01L2225/06572 , H01L2225/06575 , H01L2924/00013 , H01L2924/00014 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01075 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/10253 , H01L2924/15159 , H01L2924/15321 , H01L2924/15787 , H01L2924/1579 , H01L2924/351 , H05K1/18 , H05K1/181 , H05K2201/09063 , H05K2201/1053 , H05K2201/10545 , H05K2201/10674 , H01L2224/13099 , H01L2224/11 , H01L2224/05099 , H01L2224/13599 , H01L2224/05599 , H01L2224/29099 , H01L2224/29599 , H01L2224/81 , H01L2924/00012 , H01L2224/48624 , H01L2924/00 , H01L2224/05552 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要: 公开了一种半导体装置、制造半导体装置的方法和电子装置。该半导体装置包括半导体元件和电子元件。半导体元件具有第一突出电极,并且电子元件具有第二突出电极。基底被布置在半导体元件与电子元件之间。基底具有通孔,第一和第二突出电极配合在通孔中。第一和第二突出电极在基底的通孔内连接到一起。
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公开(公告)号:CN107424975A
公开(公告)日:2017-12-01
申请号:CN201710260396.7
申请日:2017-04-20
申请人: 三星电子株式会社
IPC分类号: H01L23/498 , H01L21/48
CPC分类号: H01L25/18 , H01L21/4853 , H01L21/4857 , H01L23/49816 , H01L23/49827 , H01L23/49833 , H01L23/5384 , H01L23/5385 , H01L24/13 , H01L24/16 , H01L24/32 , H01L24/48 , H01L24/49 , H01L24/81 , H01L25/0652 , H01L25/0655 , H01L25/105 , H01L2224/16141 , H01L2224/16145 , H01L2224/16227 , H01L2224/32225 , H01L2224/48227 , H01L2224/4911 , H01L2224/73204 , H01L2224/97 , H01L2225/06517 , H01L2225/06572 , H01L2924/15311 , H01L2924/181 , H01L2224/81 , H01L23/49811
摘要: 在一个实施方式中,半导体模块包括模块基板和安装在模块基板的第一表面上并且电连接到模块基板的第一表面的第一基板。第一基板具有半导体模块的一个或更多第一电连接器,并且第一基板将第一电连接器电连接到模块基板。
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公开(公告)号:CN108292626A
公开(公告)日:2018-07-17
申请号:CN201580084799.X
申请日:2015-12-23
申请人: 英特尔公司
IPC分类号: H01L21/768 , H01L21/60 , H01L23/48
CPC分类号: H01L25/0657 , H01L21/486 , H01L21/76251 , H01L21/76838 , H01L21/76898 , H01L23/481 , H01L23/485 , H01L23/49827 , H01L24/05 , H01L24/06 , H01L24/08 , H01L24/09 , H01L24/13 , H01L24/16 , H01L24/48 , H01L27/1203 , H01L27/1211 , H01L2224/02331 , H01L2224/02381 , H01L2224/0401 , H01L2224/04042 , H01L2224/04105 , H01L2224/05569 , H01L2224/05571 , H01L2224/06181 , H01L2224/06182 , H01L2224/08146 , H01L2224/08235 , H01L2224/09181 , H01L2224/13023 , H01L2224/131 , H01L2224/16141 , H01L2224/16146 , H01L2224/16227 , H01L2224/16235 , H01L2224/17181 , H01L2224/48105 , H01L2224/48228 , H01L2224/48464 , H01L2224/73257 , H01L2225/06513 , H01L2225/06517 , H01L2225/06541 , H01L2225/06548 , H01L2225/06572 , H01L2924/014
摘要: 一种装置包括:电路结构,所述电路结构包括器件层;在器件层的第一侧上并且耦合到晶体管器件中的多个晶体管器件的一个或多个导电互连级;以及衬底,所述衬底包括耦合到所述一个或多个导电互连级的导电穿硅过孔,使得所述一个或多个互连层位于所述穿硅过孔和所述器件层之间。一种方法,包括:在衬底上形成多个晶体管器件,所述多个晶体管器件限定器件层;在所述器件层的第一侧上形成一个或多个互连级;去除衬底的一部分;以及将穿硅过孔耦合到所述一个或多个互连级,使得所述一个或多个互连级位于所述器件层和所述穿硅过孔之间。
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公开(公告)号:CN102623440B
公开(公告)日:2015-05-20
申请号:CN201110460504.8
申请日:2011-12-31
申请人: 富士通株式会社
发明人: 赤松俊也
IPC分类号: H01L25/00 , H01L25/065 , H01L23/48 , H01L23/498 , H01L21/60 , H01L21/50
CPC分类号: H01L25/0657 , H01L21/76898 , H01L23/481 , H01L24/13 , H01L24/16 , H01L24/17 , H01L24/48 , H01L24/73 , H01L24/81 , H01L25/0652 , H01L25/50 , H01L29/0657 , H01L2224/02372 , H01L2224/0401 , H01L2224/05548 , H01L2224/05567 , H01L2224/05571 , H01L2224/05573 , H01L2224/05624 , H01L2224/11002 , H01L2224/1147 , H01L2224/13006 , H01L2224/13024 , H01L2224/13025 , H01L2224/13027 , H01L2224/1308 , H01L2224/13082 , H01L2224/131 , H01L2224/13111 , H01L2224/13144 , H01L2224/13147 , H01L2224/14181 , H01L2224/16141 , H01L2224/16147 , H01L2224/16148 , H01L2224/16238 , H01L2224/1624 , H01L2224/1703 , H01L2224/17051 , H01L2224/17181 , H01L2224/45144 , H01L2224/48095 , H01L2224/48227 , H01L2224/48599 , H01L2224/73204 , H01L2224/73207 , H01L2224/73265 , H01L2224/81136 , H01L2224/8114 , H01L2224/81192 , H01L2224/81193 , H01L2224/81815 , H01L2224/81986 , H01L2224/83102 , H01L2224/9201 , H01L2224/94 , H01L2224/96 , H01L2225/0651 , H01L2225/06513 , H01L2225/06541 , H01L2225/06555 , H01L2225/06572 , H01L2225/06575 , H01L2924/00013 , H01L2924/00014 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01075 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/10253 , H01L2924/15159 , H01L2924/15321 , H01L2924/15787 , H01L2924/1579 , H01L2924/351 , H05K1/18 , H05K1/181 , H05K2201/09063 , H05K2201/1053 , H05K2201/10545 , H05K2201/10674 , H01L2224/13099 , H01L2224/11 , H01L2224/05099 , H01L2224/13599 , H01L2224/05599 , H01L2224/29099 , H01L2224/29599 , H01L2224/81 , H01L2924/00012 , H01L2224/48624 , H01L2924/00 , H01L2224/05552 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要: 公开了一种半导体装置、制造半导体装置的方法和电子装置。该半导体装置包括半导体元件和电子元件。半导体元件具有第一突出电极,并且电子元件具有第二突出电极。基底被布置在半导体元件与电子元件之间。基底具有通孔,第一和第二突出电极配合在通孔中。第一和第二突出电极在基底的通孔内连接到一起。基底具有绝缘膜,绝缘膜覆盖第一通孔的侧壁并且暴露在第一通孔内,并且第一突出电极的直径和第二突出电极的直径小于第一通孔的直径。
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