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    THERMALLY CONDUCTIVE MATERIAL AND METHOD OF USING THE SAME
    2.
    发明公开
    THERMALLY CONDUCTIVE MATERIAL AND METHOD OF USING THE SAME 有权
    导热材料和方法的使用

    公开(公告)号：EP1163483A4

    公开(公告)日：2007-09-26

    申请号：EP00918176

    申请日：2000-03-20

    申请人： EATON MANFORD L

    发明人： EATON MANFORD L

    IPC分类号： C09K5/06 ,  F28F13/00 ,  H01L23/373 ,  H01L23/427 ,  F28F7/00

    CPC分类号： C09K5/06 ,  C09K5/063 ,  F28F13/00 ,  F28F2013/006 ,  H01L23/3737 ,  H01L23/4275 ,  H01L24/32 ,  H01L2224/32 ,  H01L2924/3011 ,  Y10T29/4935

    摘要： A method for establishing a thermal interface (1000) between an electrical component (200) and a heat sink (100) including the selection of a compound having a melt temperature above the normal operating temperature of the component (200). The electrical component (200) initially reaches an initial operating temperature sufficient to deform or melt the compound and fill the spaces between the mating surfaces (210, 110) of the component (200) and heat sink (100). Upon cooling, a solidified thermal joint (1000) is permanently established which precludes the component (200) from heating beyond its normal operating temperature upon subsequent operation. As the normal operating temperature of the component (200) is below the melt point of the compound, the compound remains in a solid state. The compound is selected so as to deform only during initial component (200) operation so as to avoid the problems of liquefaction. An alternative compound is selected with the above attributes along with desired adhesive characteristics to fix the component (200) to the heat sink (100) with the compound therebetween at low closure forces.

    RADIATION PLATE AND POWER SEMICONDUCTOR MODULE; IC PACKAGE
    7.
    发明公开
    RADIATION PLATE AND POWER SEMICONDUCTOR MODULE; IC PACKAGE 审中-公开
    STRAHLUNGSPLATTEN- UND LEI​​STUNGSHALBLEITERMODUL，IC-BAUSTEIN

    公开(公告)号：EP1420445A1

    公开(公告)日：2004-05-19

    申请号：EP02765345.0

    申请日：2002-08-22

    申请人： Dowa Mining Co., Ltd.

    发明人： ENDOU, Hideki, c/o Dowa Mining Co., Ltd. ,  YANASE, Shingo, c/o Dowa Mining Co., Ltd.

    IPC分类号： H01L23/36

    CPC分类号： C22C9/00 ,  H01L23/367 ,  H01L23/3736 ,  H01L2224/32

    摘要： Heat dissipating plate (4) made of copper-base alloy is proposed that exhibits high degree of flatness after joining in the step of assembling power semiconductor modules, IC packages, etc., that will not crack in the solder (3) joint if subjected to heat cycles during joining or in an environment of use, and that has high heat conductivity and cost effectiveness.
    The heat dissipating plate (4) uses a copper-base alloy having a 0.2% yield strength of at least 300 N/mm 2 which is characterized in that the 0.2% yield strength after heating at 400 °C for 10 minutes is at least 90% of the 0.2% yield strength before heating and that said copper-base alloy has a heat conductivity of at least 350 W/m·K and contains at least one element of the group consisting of Fe, Co and Ni plus P in a total amount of 0.01-0.3%; the heat dissipating plate (4) is 10-200 mm long on each side, 0.1-5 mm thick and warped by 200 µm or less in a curved shape with a radius of curvature of at least 100 mm; this heat dissipating plate (4) exhibits high degree of flatness after the assembling step and assures improved heat dissipating performance.

    摘要翻译： 提出了由铜基合金制成的散热板（4），在组装功率半导体模块，IC封装等的步骤中，在焊接（3）接头上不会开裂的步骤中，在接合之后呈现高度的平坦度 在连接或使用环境中加热循环，并且具有高导热性和成本效益。 散热板（4）使用0.2％屈服强度为300N / mm 2以上的铜基合金，其特征在于在400℃下加热后的0.2％屈服强度为 10分钟是加热前0.2％屈服强度的至少90％，所述铜基合金的导热率至少为350W / mK，并且包含至少一种元素，由Fe，Co和Ni加成 P总量为0.01-0.3％; 散热板（4）的每一侧为10-200mm长，厚度为0.1-5mm，曲率半径为100mm以上的弯曲形状为200μm以下。 该散热板（4）在组装步骤之后表现出高度的平整度，并确保了散热性能的提高。