摘要:
A semiconductor device according to an embodiment is a semiconductor device in which a semiconductor chip mounted on a chip mounting part is sealed by resin and a first member is fixed to a chip mounting surface side between a peripheral portion of the semiconductor chip and a peripheral portion of the chip mounting part. Also, the first member is sealed by the resin. Also, a length of the first part of the chip mounting part in the first direction is larger than a length of the semiconductor chip in the first direction, in a plan view.
摘要:
LED chip packaging assembly that facilitates an integrated method for mounting LED chips as a group to be pre-wired to be electrically connected to each other through a pattern of extendable metal wiring lines is provided. LED chips which are electrically connected to each other through extendable metal wiring lines, replace pick and place mounting and the wire bonding processes of the LED chips, respectively. Wafer level MEMS technology is utilized to form parallel wiring lines suspended and connected to various contact pads. Bonding wires connecting the LED chips are made into horizontally arranged extendable metal wiring lines which can be in a spring shape, and allowing for expanding and contracting of the distance between the connected LED chips. A tape is further provided to be bonded to the LED chips, and extended in size to enlarge distance between the LED chips to exceed the one or more prearranged distances.
摘要:
LED chip packaging assembly that facilitates an integrated method for mounting LED chips as a group to be pre-wired to be electrically connected to each other through a pattern of extendable metal wiring lines is provided. LED chips which are electrically connected to each other through extendable metal wiring lines, replace pick and place mounting and the wire bonding processes of the LED chips, respectively. Wafer level MEMS technology is utilized to form parallel wiring lines suspended and connected to various contact pads. Bonding wires connecting the LED chips are made into horizontally arranged extendable metal wiring lines which can be in a spring shape, and allowing for expanding and contracting of the distance between the connected LED chips. A tape is further provided to be bonded to the LED chips, and extended in size to enlarge distance between the LED chips to exceed the one or more prearranged distances.
摘要:
A semiconductor device package includes an electrically conductive lead frame having a plurality of posts disposed at a perimeter of the package. Each of the posts has a first contact surface disposed at the first package face and a second contact surface disposed at the second package face. The lead frame also includes a plurality of post extensions disposed at the second package face. Each of the post extensions includes a bond site formed on a surface of the post extension opposite the second package face. At least one I/O pads on the semiconductor device is electrically connected to the post extension at the bond site using wirebonding, tape automated bonding, or flip-chip methods. The package can be assembled use a lead frame having pre-formed leads, with or without taping, or it can employ the use of partially etched lead frames. A stack of the semiconductor device packages may be formed.
摘要:
A semiconductor device according to an embodiment is a semiconductor device in which a semiconductor chip mounted on a chip mounting part is sealed by resin and a first member is fixed to a chip mounting surface side between a peripheral portion of the semiconductor chip and a peripheral portion of the chip mounting part. Also, the first member is sealed by the resin. Also, a length of the first part of the chip mounting part in the first direction is larger than a length of the semiconductor chip in the first direction, in a plan view.
摘要:
The present invention relates to a power semiconductor module comprising a semiconductor device (12), in particular an insulated gate bipolar transistor, a reverse conductive insulated gate bipolar transistor, or a bi-mode insulated gate transistor, with an emitter electrode and a collector electrode, wherein an electrically conductive upper layer (14) is sintered to the emitter electrode, the upper layer (14) at least partly being capable of forming an eutecticum with the semiconductor of the semiconductor device (12) and at least partly having a coefficient of thermal expansion which differs from the coefficient of thermal expansion of the semiconductor in a range of ≤ 250%, in particular ≤ 50%, and wherein an electrically conductive base plate (20) is sintered to the collector electrode, and wherein the semiconductor module (10) further comprises an electrically conductive area (24) being electrically isolated from the base plate (20) and being connected to the upper layer (14) via a direct electrical connection (22). A semiconductor module according to the invention is easy to prepare, has an improved reliability and exhibits short circuit failure mode capacity.
摘要:
The invention relates to a chip arrangement (10) and a method for forming a contact connection (11) between a chip (18), in particular a power transistor or the like, and a conductor material strip (14), said conductor material strip being formed on a non-conductive substrate (12) and the chip being arranged on the substrate or on a conductor material strip (15). A silver paste (29) or copper paste is applied to a chip contact surface (25) of the chip and of the conductor material strip (28), a contact conductor (30) is dipped into the silver paste or the copper paste on the chip contact surface and into the silver paste or the copper paste on the conductor material strip, and a solvent contained in the silver paste or the copper paste is at least partially evaporated by heating. The silver paste or the copper paste is then sintered by means of laser energy, thereby forming the contact connection.
摘要:
A semiconductor device package includes an electrically conductive lead frame having a plurality of posts disposed at a perimeter of the package. Each of the posts has a first contact surface disposed at the first package face and a second contact surface disposed at the second package face. The lead frame also includes a plurality of post extensions disposed at the second package face. Each of the post extensions includes a bond site formed on a surface of the post extension opposite the second package face. At least one I/O pads on the semiconductor device is electrically connected to the post extension at the bond site using wirebonding, tape automated bonding, or flip-chip methods. The package can be assembled use a lead frame having pre-formed leads, with or without taping, or it can employ the use of partially etched lead frames. A stack of the semiconductor device packages may be formed.