公开(公告)号：EP2225680A4

公开(公告)日：2015-07-01

申请号：EP08862984

申请日：2008-12-15

Applicant: NOVATORQUE INC

Inventor： PETRO JOHN ,  MAYER JEREMY

IPC: G06F19/00 ,  B29C67/00

CPC classification number: B23K26/0846 ,  B23K26/22 ,  B23K26/38 ,  B23K2201/18 ,  B23K2201/36 ,  B29C64/141 ,  H02K15/022

公开(公告)号：EP2883644A1

公开(公告)日：2015-06-17

申请号：EP13835075.6

申请日：2013-07-30

Applicant: Mitsubishi Heavy Industries, Ltd.

Inventor： TSUNO Takeshi ,  GOTO Takayuki ,  KINOUCHI Masato ,  UTSUMI Jun ,  IDE Kensuke ,  SUZUKI Takenori

IPC: B23K20/00 ,  B23K20/24 ,  H01L21/02

CPC classification number: H01L21/67121 ,  B23K20/02 ,  B23K20/16 ,  B23K20/24 ,  B23K2201/36 ,  B32B37/0046 ,  B32B37/18 ,  B32B38/0012 ,  B32B38/1858 ,  B32B2307/20 ,  B32B2310/08 ,  B32B2311/00 ,  B32B2457/14 ,  B81C3/001 ,  B81C99/0025 ,  C23C14/3407 ,  C23C14/3457 ,  C23C14/3464 ,  C23C14/50 ,  C23C14/564 ,  H01J37/3435 ,  H01L21/187 ,  H01L21/2007

Abstract: The purpose of the present invention is to suppress adhering of impurities to substrates and intermediate layers during normal temperature bonding of substrates. This normal temperature bonding device is provided with: a vacuum vessel (1); a first holding mechanism (3a) that holds a first substrate (4); a second holding mechanism (3b) that holds a second substrate (4); a beam source (6) that outputs an activated beam that irradiates surfaces to be bonded of the first substrate (4) and the second substrate (4); and a pressure bonding mechanism (5) that aligns and bonds the surfaces to be bonded of both substrates (4) to which a target material has been made to adhere. At least one of the vacuum vessel (1), the first and second holding mechanisms (3a, 3b), the beam source (6) and the pressure bonding mechanism (5) is formed from or covered with a first material that is not easily sputtered by the activated beam (6) or that does not inhibit the function of devices formed by bonding the two substrates (4) even when present on the surfaces to be bonded.

Abstract translation: 本发明的目的是在衬底的正常温度粘合期间抑制杂质粘附到衬底和中间层。 该常温接合装置具备：真空容器（1）; 保持第一基板（4）的第一保持机构（3a）; 保持第二基板（4）的第二保持机构（3b）; 光源（6），其输出照射第一基板（4）和第二基板（4）的被粘接面的激活光; 以及压接机构（5），其对准并粘接已粘贴有目标材料的两基板（4）的被粘接面。 真空容器（1），第一和第二保持机构（3a，3b），束源（6）和压力粘合机构（5）中的至少一个由不容易形成的第一材料形成或用第一材料覆盖 （6）溅射，或者即使存在于待粘合的表面上也不会抑制通过粘合两个基板（4）而形成的装置的功能。

公开(公告)号：EP2412007A4

公开(公告)日：2014-11-12

申请号：EP10756901

申请日：2010-03-26

Applicant: APPLIED NANOTECH HOLDINGS INC ,  ISHIHARA CHEMICAL CO LTD

Inventor： YANIV ZVI ,  YANG MOHSHI ,  LAXTON PETER B

IPC: H01L21/288 ,  B22F3/105 ,  B22F7/04 ,  B23K26/32 ,  B23K26/34 ,  H01L21/48 ,  H05K3/12

CPC classification number: H05K1/092 ,  B22F3/105 ,  B22F7/04 ,  B22F2998/00 ,  B23K26/32 ,  B23K26/34 ,  B23K35/0244 ,  B23K2201/36 ,  B23K2203/50 ,  B23K2203/52 ,  H01L21/268 ,  H01L21/288 ,  H01L21/4867 ,  H01L21/76877 ,  H01L2924/0002 ,  H05K1/0201 ,  H05K3/10 ,  H05K3/125 ,  H05K3/1283 ,  H05K3/4664 ,  H05K2201/062 ,  H05K2203/107 ,  Y10T29/49156 ,  B22F1/0018 ,  H01L2924/00

Abstract: Conductive lines are deposited on a substrate to produce traces for conducting electricity between electronic components. A patterned metal layer is formed on the substrate, and then a layer of material having a low thermal conductivity is coated over the patterned metal layer and the substrate. Vias are formed through the layer of material having the low thermal conductivity thereby exposing portions of the patterned metal layer. A film of conductive ink is then coated over the layer of material having the low thermal conductivity and into the vias to thereby coat the portions of the patterned metal layer, and then sintered. The film of conductive ink coated over the portion of the patterned metal layer does not absorb as much energy from the sintering as the film of conductive ink coated over the layer of material having the low thermal conductivity. The layer of material having the low thermal conductivity may be a polymer, such as polyimide.

Abstract translation: 导电线沉积在基板上以产生用于在电子部件之间传导电力的迹线。 在衬底上形成图案化的金属层，然后在图案化的金属层和衬底上涂覆具有低热导率的材料层。 通过具有低热导率的材料层形成通孔，从而暴露图案化金属层的部分。 然后将导电油墨膜涂覆在具有低热导率的材料层上并进入通孔中，从而涂覆图案化金属层的部分，然后烧结。 涂覆在图案化金属层的部分上的导电油墨的膜不像吸收与具有低热导率的材料层上的导电油墨的膜一样消耗的能量。 具有低热导率的材料层可以是聚合物，例如聚酰亚胺。

公开(公告)号：EP2783401A1

公开(公告)日：2014-10-01

申请号：EP12794276.1

申请日：2012-11-22

Applicant: Valeo Systemes Thermiques ,  Simonin, Michel

Inventor： SIMONIN, Michel ,  BOISSELLE, Patrick ,  DE VAULX, Cédric

IPC: H01L35/08 ,  H01L35/22

CPC classification number: H01L35/325 ,  B23K1/0016 ,  B23K35/0233 ,  B23K35/0238 ,  B23K35/286 ,  B23K35/383 ,  B23K2201/36 ,  B23K2203/02 ,  B23K2203/10 ,  B23K2203/20 ,  B32B15/016 ,  H01L35/08 ,  H01L35/22 ,  H01L35/34

Abstract: The invention relates to a thermoelectric device comprising: a plurality of elements (4), called thermoelectric elements, allowing an electrical current to be produced from a temperature gradient between two of their faces (3a, 3b), called contact faces; electrically conductive tracks (20); and a solder joint between said contact faces (3a, 3b) and the electrically conductive tracks. According to the invention, said solder comprises an alloy based on aluminium and silicon. The invention also relates to a process for manufacturing such a device, using solid-state soldering.

公开(公告)号：EP2204846A4

公开(公告)日：2014-01-15

申请号：EP08790566

申请日：2008-06-23

Applicant: TANAKA ELECTRONICS IND

Inventor： TAKADA MITSUO ,  TESHIMA SATOSHI ,  KUWAHARA TAKESHI

IPC: C22C5/02 ,  H01L23/49

CPC classification number: H01L24/85 ,  B23K35/3013 ,  B23K2201/36 ,  C22C5/02 ,  H01L24/43 ,  H01L24/45 ,  H01L24/48 ,  H01L24/78 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/43 ,  H01L2224/45015 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/4845 ,  H01L2224/48465 ,  H01L2224/48624 ,  H01L2224/48639 ,  H01L2224/48644 ,  H01L2224/48664 ,  H01L2224/78301 ,  H01L2224/85045 ,  H01L2224/85181 ,  H01L2224/85203 ,  H01L2224/85205 ,  H01L2224/85439 ,  H01L2224/85444 ,  H01L2224/85464 ,  H01L2224/859 ,  H01L2924/00011 ,  H01L2924/01105 ,  H01L2924/01204 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/20106 ,  H01L2924/20752 ,  Y10T428/12 ,  H01L2924/01012 ,  H01L2924/01063 ,  H01L2924/0105 ,  H01L2924/0102 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/013 ,  H01L2924/00015 ,  H01L2924/01205 ,  H01L2924/01048 ,  H01L2924/00013 ,  H01L2924/01049 ,  H01L2924/01006

Abstract: [PROBLEMS] To provide a gold alloy wire which is excellent in the property of forming a melt ball, suitability for stitch bonding, and wire strength and, despite this, gives a press-bonded ball having excellent circularity, and which is usable in high-density wiring for a semiconductor device. [MEANS FOR SOLVING PROBLEMS] The gold alloy wire for use in ball bonding is made of a gold alloy comprising 10-50 mass ppm magnesium (Mg), 5-20 mass ppm europium (Eu), 2-9 mass ppm calcium (Ca), and gold (Au) having a purity of 99.995 mass% or higher as the remainder, wherein the calcium (Ca) content is up to half the europium (Eu) content by mass.

公开(公告)号：EP2672509A1

公开(公告)日：2013-12-11

申请号：EP12742631.0

申请日：2012-01-30

Applicant: Suga, Tadatomo ,  Bondtech Co., Ltd. ,  Taiyo Yuden Co., Ltd. ,  Lan Technical Service Co., Ltd.

Inventor： YAMAUCHI Akira ,  KONDOU Ryuichi ,  MATSUMOTO Yoshiie

IPC: H01L21/02 ,  B23K20/00 ,  B23K20/14 ,  B23K20/16 ,  B23K20/24

CPC classification number: H01L21/3221 ,  B23K1/20 ,  B23K20/24 ,  B23K2201/36 ,  H01J37/317 ,  H01J2237/202 ,  H01J2237/3165 ,  H01L21/02046 ,  H01L21/2007 ,  H01L21/263 ,  H01L21/302 ,  H01L21/67092 ,  H01L21/67115 ,  H01L21/76251 ,  H01L29/04 ,  H01L29/36

Abstract: [Problem] To provide a substrate bonding technique having a wide range of application. [Solution] A silicon thin film is formed on a bonding surface, and the interface with the substrate is surface-treated using energetic particles/metal particles.

Abstract translation: [问题]提供具有广泛应用的基板粘合技术。 [解决方案]在接合表面上形成硅薄膜，并且使用能量粒子/金属颗粒对与基板的界面进行表面处理。

公开(公告)号：EP2148363A3

公开(公告)日：2013-10-30

申请号：EP09008710.7

申请日：2009-07-03

Applicant: Semikron Elektronik GmbH & Co. KG Patentabteilung

Inventor： Fey, Tobias ,  Göbl, Christian ,  Braml, Heiko ,  Hermann, Ulrich

IPC: B23K35/30 ,  B23K35/36 ,  H01B1/22 ,  H01L21/60 ,  H01L23/488 ,  H01L25/07 ,  H01L23/373

CPC classification number: H01L23/49811 ,  B23K35/3006 ,  B23K35/3602 ,  B23K2201/36 ,  C22C32/0021 ,  H01B1/22 ,  H01L23/049 ,  H01L23/3735 ,  H01L24/05 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/35 ,  H01L24/37 ,  H01L24/40 ,  H01L24/72 ,  H01L24/83 ,  H01L25/072 ,  H01L2224/04026 ,  H01L2224/05638 ,  H01L2224/27318 ,  H01L2224/2732 ,  H01L2224/29294 ,  H01L2224/293 ,  H01L2224/29339 ,  H01L2224/29344 ,  H01L2224/29347 ,  H01L2224/29369 ,  H01L2224/29387 ,  H01L2224/2949 ,  H01L2224/32225 ,  H01L2224/32238 ,  H01L2224/32245 ,  H01L2224/33181 ,  H01L2224/371 ,  H01L2224/40225 ,  H01L2224/83013 ,  H01L2224/83203 ,  H01L2224/8322 ,  H01L2224/83222 ,  H01L2224/83438 ,  H01L2224/83801 ,  H01L2224/8384 ,  H01L2224/84801 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/0102 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/01058 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/15787 ,  H05K3/321 ,  H05K2203/1131 ,  H01L2924/20271 ,  H01L2924/05432 ,  H01L2924/0541 ,  H01L2924/01108 ,  H01L2924/00012 ,  H01L2924/00014

Abstract: Die Erfindung beschreibt ein Edelmetallverbindungsmittel mit einem Feststoffanteil und einem Flüssiganteil mit einem zugeordneten Mischungsverhältnis in Volumenprozent von 99,5:0,5 bis 80:20 der beiden. Hierbei weist der Feststoffanteil einen Volumenanteil an einer ersten Komponente Silber von 60% bis 95% und einen Volumenanteil an einer zweiten Komponente Silberoxid von 5% bis 40% auf. Die jeweiligen Komponenten des Feststoffanteils liegen als Partikel mit Längenabmessungen zwischen 50nm und 20µm vor. Die Verwendung des Edelmetallverbindungsmittels dient der Ausbildung einer stoffschlüssigen Verbindung zweier metallischer Verbindungspartner, wobei die Ausbildung der Verbindung durch Wärmeeinwirkung erfolgt.

公开(公告)号：EP2647467A2

公开(公告)日：2013-10-09

申请号：EP13170700.2

申请日：2007-07-03

Applicant: Fuji Electric Holdings Co., Ltd. ,  NIHON HANDA CO., LTD.

Inventor： Yamashita, Mitsuo ,  Goto, Tomoaki ,  Asagi, Takeshi

IPC: B23K35/26 ,  C22C13/00 ,  H05K3/34 ,  B23K1/00 ,  B23K101/42 ,  B23K35/02 ,  C22C1/04 ,  C22C12/00 ,  C22C28/00

CPC classification number: H05K3/341 ,  B23K1/0016 ,  B23K35/0244 ,  B23K35/025 ,  B23K35/262 ,  B23K2201/36 ,  B23K2201/42 ,  C22C1/0483 ,  C22C12/00 ,  C22C13/00 ,  C22C28/00 ,  H01L2924/0132 ,  H01L2924/0133 ,  H05K3/3484 ,  H05K2201/0266 ,  H05K2201/0272 ,  H05K2203/04 ,  H05K2203/12 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01029

Abstract: The present invention aims at providing a high-temperature lead-free solder material which can form a solder joint of improved heat resistance and reliability, and is suitable for application to dual-temperature solder connection, and a method of soldering an electronic part. According to the invention a solder cream is obtained by kneading an Sn-Ag-Cu alloy with a flux, wherein the Sn-Ag-Cu alloy comprises a mixture of a first powder alloy containing 10 to 30% by weight of Ag and 2 to 20% by weight of Cu with a balance consisting of Sn and unavoidable impurities, and a second powder alloy containing smaller compositions (% by weight) of Ag and Cu than the first powder alloy, and having a melting point lower than that of the first powder alloy, the mixture containing a total of not more than 35% by weight of Ag and Cu.

Abstract translation: 本发明的目的是提供一种可形成耐热性和可靠性提高的焊点的高温无铅焊料，适用于双温焊料连接，以及焊接电子部件的方法。 根据本发明，通过将Sn-Ag-Cu合金与助熔剂捏合来获得焊膏，其中Sn-Ag-Cu合金包含含有10〜30重量％Ag的第一粉末合金和2〜 20重量％的余量由Sn和不可避免的杂质组成的Cu，以及比第一粉末合金含有比Ag和Cu的组成（重量％）小的第二粉末合金，并且具有比第一粉末合金低的熔点 粉末合金，该混合物含有不超过35重量％的Ag和Cu。

公开(公告)号：EP1483419B1

公开(公告)日：2013-08-28

申请号：EP03707862.3

申请日：2003-02-11

Applicant: Invensas Corporation

Inventor： CHOI, Won, K. ,  GOLDSMITH, Charles, C. ,  GOSSELIN, Timothy, A. ,  HENDERSON, Donald, W. ,  KANG, Sung, K. ,  PUTTLITZ, Karl J., Sr. ,  SHIH, Da-Yuan

IPC: C22C1/00 ,  B23K35/26

CPC classification number: C22C13/00 ,  B23K35/262 ,  B23K2201/36 ,  H01L24/11 ,  H01L24/16 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2924/01322 ,  H01L2924/14 ,  H05K3/3436 ,  H05K3/3463 ,  Y10T428/12708 ,  Y10T428/12715 ,  Y10T428/12722 ,  H01L2924/00

公开(公告)号：EP2610934A1

公开(公告)日：2013-07-03

申请号：EP11820024.5

申请日：2011-08-26

Applicant: Kyocera Corporation

Inventor： SETOGUCHI,Tsuyoshi

IPC: H01L41/083 ,  B23K11/00 ,  B23K11/34 ,  B23K26/20 ,  H01L41/187 ,  H01L41/22 ,  H01L41/24

CPC classification number: H01L41/0536 ,  B23K11/0033 ,  B23K26/206 ,  B23K26/32 ,  B23K26/323 ,  B23K33/00 ,  B23K2201/04 ,  B23K2201/36 ,  B23K2203/05 ,  B23K2203/50 ,  B41J2/14201 ,  B41J2/14233 ,  B41J2002/14491 ,  H01L41/0533 ,  H01L41/083 ,  H01L41/23

Abstract: [Problem] There is provided piezoelectric actuator capable of suppressing disconnection of a junction due to tensile stress. [Solution] A piezoelectric actuator of the invention includes a piezoelectric element, a base body (7) having an upper face on which a lower end of the piezoelectric element abuts, and a case (3) having an inner face on which an upper end of the piezoelectric element abuts, the case being configured to enclose the piezoelectric element, wherein the case (3) includes a flange portion (33) configured to be joined to the base body (7), and at least two bent portions (41) are present on an inner face that is formed from a lower face of the flange portion (33) of the case (3) to the upper face of the base body (7) on an enclosure space side of a junction between the case and the base body.