公开(公告)号：EP2147739A3

公开(公告)日：2013-12-04

申请号：EP09008711.5

申请日：2009-07-03

申请人： Semikron Elektronik GmbH & Co. KG Patentabteilung

发明人： Tobias, Fey

IPC分类号： B23K35/02 ,  H01B1/22 ,  H01L21/60 ,  H01L23/488 ,  H01L25/07 ,  H01L23/373 ,  B23K35/30

CPC分类号： H01L23/49811 ,  B23K35/025 ,  B23K35/3006 ,  H01B1/22 ,  H01L23/049 ,  H01L23/3735 ,  H01L24/05 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/35 ,  H01L24/37 ,  H01L24/40 ,  H01L24/72 ,  H01L24/743 ,  H01L24/83 ,  H01L25/072 ,  H01L2224/04026 ,  H01L2224/05638 ,  H01L2224/27003 ,  H01L2224/271 ,  H01L2224/27334 ,  H01L2224/29294 ,  H01L2224/293 ,  H01L2224/29339 ,  H01L2224/29344 ,  H01L2224/29347 ,  H01L2224/29369 ,  H01L2224/29387 ,  H01L2224/2949 ,  H01L2224/32225 ,  H01L2224/32238 ,  H01L2224/32245 ,  H01L2224/33181 ,  H01L2224/371 ,  H01L2224/40095 ,  H01L2224/40225 ,  H01L2224/83002 ,  H01L2224/83013 ,  H01L2224/83203 ,  H01L2224/8322 ,  H01L2224/83222 ,  H01L2224/83438 ,  H01L2224/83801 ,  H01L2224/8384 ,  H01L2224/83907 ,  H01L2224/84801 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/0102 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/01058 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/0541 ,  H01L2924/01108 ,  H01L2924/20271 ,  H01L2924/00014

摘要： Die Erfindung beschreibt ein Edelmetallverbindungsmittel in Folienform, sein Herstellungsverfahren sowie ein Verfahren zur Anwendung. Das Edelmetallverbindungsmittel weist eine Feststoffanteil und einen Flüssiganteil mit einem zugeordneten Mischungsverhältnis in Volumenprozent von 99,8:0,2 bis 95:5 der beiden auf, wobei der Feststoffanteil einen Volumenanteil an einer ersten Komponente Silber von mindestens 60% aufweist und wobei der Flüssiganteil aus einer Lösungsmittelkomponente und mindestens einem hierin gelösten organischen Bindemittel besteht. Die erste Komponente des Feststoffanteils liegt als Partikel mit einer Längenabmessung zwischen 50nm und 20µm liegt. Die Herstellung der Folie erfolgt nach einem Foliengussverfahren und deren Verwendung in der Ausbildung einer stoffschlüssigen Verbindung durch Wärmeeinwirkung.

公开(公告)号：EP2148363A3

公开(公告)日：2013-10-30

申请号：EP09008710.7

申请日：2009-07-03

申请人： Semikron Elektronik GmbH & Co. KG Patentabteilung

发明人： Fey, Tobias ,  Göbl, Christian ,  Braml, Heiko ,  Hermann, Ulrich

IPC分类号： B23K35/30 ,  B23K35/36 ,  H01B1/22 ,  H01L21/60 ,  H01L23/488 ,  H01L25/07 ,  H01L23/373

CPC分类号： H01L23/49811 ,  B23K35/3006 ,  B23K35/3602 ,  B23K2201/36 ,  C22C32/0021 ,  H01B1/22 ,  H01L23/049 ,  H01L23/3735 ,  H01L24/05 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/35 ,  H01L24/37 ,  H01L24/40 ,  H01L24/72 ,  H01L24/83 ,  H01L25/072 ,  H01L2224/04026 ,  H01L2224/05638 ,  H01L2224/27318 ,  H01L2224/2732 ,  H01L2224/29294 ,  H01L2224/293 ,  H01L2224/29339 ,  H01L2224/29344 ,  H01L2224/29347 ,  H01L2224/29369 ,  H01L2224/29387 ,  H01L2224/2949 ,  H01L2224/32225 ,  H01L2224/32238 ,  H01L2224/32245 ,  H01L2224/33181 ,  H01L2224/371 ,  H01L2224/40225 ,  H01L2224/83013 ,  H01L2224/83203 ,  H01L2224/8322 ,  H01L2224/83222 ,  H01L2224/83438 ,  H01L2224/83801 ,  H01L2224/8384 ,  H01L2224/84801 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/0102 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/01058 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/15787 ,  H05K3/321 ,  H05K2203/1131 ,  H01L2924/20271 ,  H01L2924/05432 ,  H01L2924/0541 ,  H01L2924/01108 ,  H01L2924/00012 ,  H01L2924/00014

摘要： Die Erfindung beschreibt ein Edelmetallverbindungsmittel mit einem Feststoffanteil und einem Flüssiganteil mit einem zugeordneten Mischungsverhältnis in Volumenprozent von 99,5:0,5 bis 80:20 der beiden. Hierbei weist der Feststoffanteil einen Volumenanteil an einer ersten Komponente Silber von 60% bis 95% und einen Volumenanteil an einer zweiten Komponente Silberoxid von 5% bis 40% auf. Die jeweiligen Komponenten des Feststoffanteils liegen als Partikel mit Längenabmessungen zwischen 50nm und 20µm vor. Die Verwendung des Edelmetallverbindungsmittels dient der Ausbildung einer stoffschlüssigen Verbindung zweier metallischer Verbindungspartner, wobei die Ausbildung der Verbindung durch Wärmeeinwirkung erfolgt.

公开(公告)号：EP2858101A3

公开(公告)日：2016-01-27

申请号：EP14178910.7

申请日：2014-07-29

申请人： Kabushiki Kaisha Toshiba

发明人： Hiratsuka, Daisuke ,  Iguchi, Tomohiro ,  Uchida, Masayuki

IPC分类号： H01L21/60 ,  H01L23/488 ,  H01L21/48 ,  H01L23/498 ,  B23K35/02 ,  H01B1/16 ,  H01B1/22 ,  B22F1/00 ,  B23K35/26 ,  B23K35/28 ,  B23K35/30 ,  B23K35/32 ,  B23K35/36 ,  C22C1/04

CPC分类号： B23K35/025 ,  B22F1/0003 ,  B22F1/0018 ,  B22F1/0074 ,  B22F2999/00 ,  B23K35/24 ,  B23K35/262 ,  B23K35/264 ,  B23K35/282 ,  B23K35/286 ,  B23K35/30 ,  B23K35/3006 ,  B23K35/3013 ,  B23K35/302 ,  B23K35/3033 ,  B23K35/32 ,  B23K35/322 ,  B23K35/325 ,  B23K35/3601 ,  B23K35/362 ,  C22C1/0491 ,  C22C5/06 ,  H01L21/4867 ,  H01L23/3737 ,  H01L24/05 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L2224/0381 ,  H01L2224/04026 ,  H01L2224/05611 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/05669 ,  H01L2224/27003 ,  H01L2224/271 ,  H01L2224/2732 ,  H01L2224/2741 ,  H01L2224/2744 ,  H01L2224/29006 ,  H01L2224/29294 ,  H01L2224/29313 ,  H01L2224/29318 ,  H01L2224/29324 ,  H01L2224/29339 ,  H01L2224/29344 ,  H01L2224/29347 ,  H01L2224/29355 ,  H01L2224/2936 ,  H01L2224/29364 ,  H01L2224/29369 ,  H01L2224/29371 ,  H01L2224/29372 ,  H01L2224/29373 ,  H01L2224/29376 ,  H01L2224/29378 ,  H01L2224/2938 ,  H01L2224/2949 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/325 ,  H01L2224/32503 ,  H01L2224/32507 ,  H01L2224/83075 ,  H01L2224/83192 ,  H01L2224/832 ,  H01L2224/83203 ,  H01L2224/83205 ,  H01L2224/8322 ,  H01L2224/83411 ,  H01L2224/83439 ,  H01L2224/83444 ,  H01L2224/83447 ,  H01L2224/83455 ,  H01L2224/83464 ,  H01L2224/83469 ,  H01L2224/8384 ,  H01L2924/01102 ,  H01L2924/10253 ,  H01L2924/10254 ,  H01L2924/10272 ,  H01L2924/1033 ,  H01L2924/1067 ,  H01L2924/12044 ,  H01L2924/15787 ,  H01L2924/0543 ,  H01L2924/01031 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/00 ,  B22F1/0022

摘要： A metallic particle paste (10) includes a polar solvent (4) and particles (10) dispersed in the polar solvent and containing a first metal. A second metal different from the first metal is dissolved in the polar solvent. The second metal is present in solvent (10) of the metallic particle paste (10) in the form of a complex ion, an organometallic ion or an ion of a metal salt. The paste (10) may be used for forming wiring and a heat-radiation portion of an electronic substrate or for bonding members (5, 7) in a semiconductor device through a bonding layer (6).

公开(公告)号：EP2454752B1

公开(公告)日：2015-09-09

申请号：EP10734619.9

申请日：2010-07-14

申请人： Silanna Semiconductor U.S.A., Inc.

发明人： NYGAARD, Paul A. ,  MOLIN, Stuart B. ,  STUBER, Michael A.

IPC分类号： H01L21/78 ,  H01L23/36 ,  H01L21/84 ,  H01L27/12 ,  H01L21/336 ,  H01L29/786 ,  H01L23/367

CPC分类号： H01L27/1207 ,  H01L21/76256 ,  H01L21/78 ,  H01L21/84 ,  H01L23/36 ,  H01L23/3677 ,  H01L24/03 ,  H01L24/05 ,  H01L24/08 ,  H01L24/11 ,  H01L24/13 ,  H01L24/29 ,  H01L24/32 ,  H01L24/48 ,  H01L24/80 ,  H01L24/83 ,  H01L24/94 ,  H01L27/1203 ,  H01L29/78603 ,  H01L29/78606 ,  H01L2221/6834 ,  H01L2221/6835 ,  H01L2221/68377 ,  H01L2224/03002 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/03462 ,  H01L2224/03464 ,  H01L2224/03845 ,  H01L2224/0401 ,  H01L2224/05572 ,  H01L2224/08225 ,  H01L2224/11002 ,  H01L2224/13022 ,  H01L2224/131 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/16227 ,  H01L2224/29186 ,  H01L2224/29188 ,  H01L2224/2919 ,  H01L2224/32225 ,  H01L2224/48 ,  H01L2224/80006 ,  H01L2224/8022 ,  H01L2224/80801 ,  H01L2224/80894 ,  H01L2224/83005 ,  H01L2224/8322 ,  H01L2224/83801 ,  H01L2224/8385 ,  H01L2224/9202 ,  H01L2224/9212 ,  H01L2224/92142 ,  H01L2224/94 ,  H01L2924/00014 ,  H01L2924/1305 ,  H01L2924/14 ,  H01L2924/3011 ,  H01L2924/3511 ,  H01L2924/014 ,  H01L2224/11 ,  H01L2924/00 ,  H01L2924/053 ,  H01L2924/00012 ,  H01L2224/83 ,  H01L2224/80 ,  H01L2224/03 ,  H01L2224/45099

摘要： Embodiments of the present invention provide for the dissipation of heat from semiconductor-on-insulator (SOI) structures. In one embodiment, a method for fabricating an integrated circuit is disclosed. In a first step, active circuitry is formed in an active layer of a SOI wafer. In a second step, substrate material is removed from a substrate layer disposed on a back side of the SOI wafer. In a third step, insulator material is removed from the back side of the SOI wafer to form an excavated insulator region. In a fourth step, a thermal dissipation layer is deposited on said excavated insulator region. The thermal dissipation layer is thermally conductive and electrically insulating.

公开(公告)号：EP2147739A2

公开(公告)日：2010-01-27

申请号：EP09008711.5

申请日：2009-07-03

申请人： Semikron Elektronik GmbH & Co. KG Patentabteilung

发明人： Tobias, Fey

IPC分类号： B23K35/02 ,  H01B1/22 ,  H01L21/60

CPC分类号： H01L23/49811 ,  B23K35/025 ,  B23K35/3006 ,  H01B1/22 ,  H01L23/049 ,  H01L23/3735 ,  H01L24/05 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/35 ,  H01L24/37 ,  H01L24/40 ,  H01L24/72 ,  H01L24/743 ,  H01L24/83 ,  H01L25/072 ,  H01L2224/04026 ,  H01L2224/05638 ,  H01L2224/27003 ,  H01L2224/271 ,  H01L2224/27334 ,  H01L2224/29294 ,  H01L2224/293 ,  H01L2224/29339 ,  H01L2224/29344 ,  H01L2224/29347 ,  H01L2224/29369 ,  H01L2224/29387 ,  H01L2224/2949 ,  H01L2224/32225 ,  H01L2224/32238 ,  H01L2224/32245 ,  H01L2224/33181 ,  H01L2224/371 ,  H01L2224/40095 ,  H01L2224/40225 ,  H01L2224/83002 ,  H01L2224/83013 ,  H01L2224/83203 ,  H01L2224/8322 ,  H01L2224/83222 ,  H01L2224/83438 ,  H01L2224/83801 ,  H01L2224/8384 ,  H01L2224/83907 ,  H01L2224/84801 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/0102 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/01058 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/0541 ,  H01L2924/01108 ,  H01L2924/20271 ,  H01L2924/00014

摘要： Die Erfindung beschreibt ein Edelmetallverbindungsmittel in Folienform, sein Herstellungsverfahren sowie ein Verfahren zur Anwendung. Das Edelmetallverbindungsmittel weist eine Feststoffanteil und einen Flüssiganteil mit einem zugeordneten Mischungsverhältnis in Volumenprozent von 99,8:0,2 bis 95:5 der beiden auf, wobei der Feststoffanteil einen Volumenanteil an einer ersten Komponente Silber von mindestens 60% aufweist und wobei der Flüssiganteil aus einer Lösungsmittelkomponente und mindestens einem hierin gelösten organischen Bindemittel besteht. Die erste Komponente des Feststoffanteils liegt als Partikel mit einer Längenabmessung zwischen 50nm und 20µm liegt. Die Herstellung der Folie erfolgt nach einem Foliengussverfahren und deren Verwendung in der Ausbildung einer stoffschlüssigen Verbindung durch Wärmeeinwirkung.

摘要翻译： 。贵金属紧固件（110）在箔（100）的形式包括固体派与液体馏分与体积％CORRESPONDING 99.8混合比：0.2-95：5，其中所述固体部分包含至少60体积％。 银，作为第一组分，和液体馏分包含的溶剂成分，并在溶剂至少在有机粘合剂溶解，并且固体部分的第一组分中存在作为具有50nm至20微米的长度尺寸的颗粒。 一个独立的claimsoft包括用于生产在箔的形式贵金属紧固件，包括具有在固体部分的体积％的液体馏分的混合比加入贵金属的紧固件的过程95：5-70：30吨 运输装置（130），完全呼叫从贵金属紧固件排出溶剂，并分离从运输装置的箔。

公开(公告)号：EP3249024A4

公开(公告)日：2018-06-20

申请号：EP16740212

申请日：2016-01-20

申请人： SEKISUI CHEMICAL CO LTD

发明人： TANIKAWA MITSURU ,  WATANABE TAKASHI ,  FUJITA YUSUKE ,  FUJITA YOSHITO ,  YAMADA TASUKU

IPC分类号： C09J201/02 ,  C08G59/50 ,  C09J4/02 ,  C09J5/06 ,  C09J11/06 ,  C09J163/00 ,  H01L21/52

CPC分类号： C09D133/14 ,  C08G59/4215 ,  C08G59/5033 ,  C08G59/686 ,  C08L33/08 ,  C09D11/101 ,  C09D11/107 ,  C09D11/30 ,  C09D11/52 ,  C09D133/10 ,  C09J5/04 ,  C09J5/06 ,  C09J9/02 ,  C09J133/10 ,  C09J133/14 ,  C09J163/00 ,  C09J171/12 ,  C09J201/02 ,  C09J2203/326 ,  C09J2205/114 ,  C09J2205/31 ,  C09J2433/00 ,  C09J2461/00 ,  C09J2463/00 ,  H01L21/52 ,  H01L24/27 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L24/91 ,  H01L2224/2741 ,  H01L2224/2783 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2224/83026 ,  H01L2224/8322 ,  H01L2224/83359 ,  H01L2224/83862 ,  H01L2224/83947 ,  H01L2924/00014 ,  H01L2224/05599 ,  H01L2224/45099 ,  H01L2224/85399 ,  C08L33/04

摘要： Provided is an inkjet adhesive which is applied using an inkjet device, wherein the adhesive can suppress generation of voids in the adhesive layer and, after bonding, can enhance adhesiveness, moisture-resistant adhesion reliability, and cooling/heating cycle reliability. An inkjet adhesive according to the present invention comprises a photocurable compound, a photo-radical initiator, a thermosetting compound having one or more cyclic ether groups or cyclic thioether groups, and a compound capable of reacting with the thermosetting compound, and the compound capable of reacting with the thermosetting compound contains aromatic amine.

公开(公告)号：EP2936552A1

公开(公告)日：2015-10-28

申请号：EP13812197.5

申请日：2013-12-17

申请人： Nederlandse Organisatie voor toegepast- natuurwetenschappelijk onderzoek TNO ,  Henkel AG&Co. KGAA

发明人： VAN DEN BRAND, Jeroen ,  SRIDHAR, Ashok ,  HENCKENS, Anja ,  DREEZEN, Gunther

IPC分类号： H01L21/58

CPC分类号： B29C65/1403 ,  B29C65/221 ,  B29C65/245 ,  B29C65/4835 ,  B29K2101/10 ,  B29L2009/00 ,  H01L24/29 ,  H01L24/81 ,  H01L24/83 ,  H01L2224/16225 ,  H01L2224/2929 ,  H01L2224/29309 ,  H01L2224/29311 ,  H01L2224/29313 ,  H01L2224/29339 ,  H01L2224/29344 ,  H01L2224/29347 ,  H01L2224/29364 ,  H01L2224/29369 ,  H01L2224/29386 ,  H01L2224/29388 ,  H01L2224/29393 ,  H01L2224/29439 ,  H01L2224/29499 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/75283 ,  H01L2224/81191 ,  H01L2224/81903 ,  H01L2224/83007 ,  H01L2224/8322 ,  H01L2224/83224 ,  H01L2224/8323 ,  H01L2224/83862 ,  H01L2224/83868 ,  H01L2224/83871 ,  H01L2224/83874 ,  H01L2924/12042 ,  H05B3/0038 ,  Y10T428/24752 ,  H01L2924/07811 ,  H01L2924/0665 ,  H01L2924/0635 ,  H01L2924/00

摘要： The present disclosure relates to a method for curing a heat-curable material (1) in an embedded curing zone (2) and an assembly resulting from such method. The method comprises providing a heat-conducting strip (3) partially arranged between a component (9) and a substrate (10) that form the embedded curing zone (2) therein between. The heat-conducting strip (3) extends from the embedded curing zone (2) to a radiation-accessible zone (7) that is distanced from the embedded curing zone (2) and at least partially free of the component (9) and the substrate (10). The method further comprises irradiating the heat-conducting strip (3) in the radiation- accessible zone (7) by means of electromagnetic radiation (6). Heat (4a) generated by absorption of the electromagnetic radiation (6) in the heat-conducting strip (3) is conducted from the radiation- accessible zone (7) along a length of the heat-conducting strip (3) to the embedded curing zone (2) to cure the heat-curable material (1) by conducted heat (4b) emanating from the heat-conducting strip (3) into the embedded curing zone (2).

公开(公告)号：EP2454752A1

公开(公告)日：2012-05-23

申请号：EP10734619.9

申请日：2010-07-14

申请人： Io Semiconductor

发明人： NYGAARD, Paul A. ,  MOLIN, Stuart B. ,  STUBER, Michael A.

IPC分类号： H01L21/84 ,  H01L27/12 ,  H01L21/336 ,  H01L29/786

CPC分类号： H01L27/1207 ,  H01L21/76256 ,  H01L21/78 ,  H01L21/84 ,  H01L23/36 ,  H01L23/3677 ,  H01L24/03 ,  H01L24/05 ,  H01L24/08 ,  H01L24/11 ,  H01L24/13 ,  H01L24/29 ,  H01L24/32 ,  H01L24/48 ,  H01L24/80 ,  H01L24/83 ,  H01L24/94 ,  H01L27/1203 ,  H01L29/78603 ,  H01L29/78606 ,  H01L2221/6834 ,  H01L2221/6835 ,  H01L2221/68377 ,  H01L2224/03002 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/03462 ,  H01L2224/03464 ,  H01L2224/03845 ,  H01L2224/0401 ,  H01L2224/05572 ,  H01L2224/08225 ,  H01L2224/11002 ,  H01L2224/13022 ,  H01L2224/131 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/16227 ,  H01L2224/29186 ,  H01L2224/29188 ,  H01L2224/2919 ,  H01L2224/32225 ,  H01L2224/48 ,  H01L2224/80006 ,  H01L2224/8022 ,  H01L2224/80801 ,  H01L2224/80894 ,  H01L2224/83005 ,  H01L2224/8322 ,  H01L2224/83801 ,  H01L2224/8385 ,  H01L2224/9202 ,  H01L2224/9212 ,  H01L2224/92142 ,  H01L2224/94 ,  H01L2924/00014 ,  H01L2924/1305 ,  H01L2924/14 ,  H01L2924/3011 ,  H01L2924/3511 ,  H01L2924/014 ,  H01L2224/11 ,  H01L2924/00 ,  H01L2924/053 ,  H01L2924/00012 ,  H01L2224/83 ,  H01L2224/80 ,  H01L2224/03 ,  H01L2224/45099

摘要： Embodiments of the present invention provide for the dissipation of heat from semiconductor-on-insulator (SOI) structures. In one embodiment, a method for fabricating an integrated circuit is disclosed. In a first step, active circuitry is formed in an active layer of a SOI wafer. In a second step, substrate material is removed from a substrate layer disposed on a back side of the SOI wafer. In a third step, insulator material is removed from the back side of the SOI wafer to form an excavated insulator region. In a fourth step, a thermal dissipation layer is deposited on said excavated insulator region. The thermal dissipation layer is thermally conductive and electrically insulating.

公开(公告)号：EP2148363A2

公开(公告)日：2010-01-27

申请号：EP09008710.7

申请日：2009-07-03

申请人： Semikron Elektronik GmbH & Co. KG Patentabteilung

发明人： Fey, Tobias ,  Göbl, Christian ,  Braml, Heiko ,  Hermann, Ulrich

IPC分类号： H01L21/60 ,  B23K35/02

CPC分类号： H01L23/49811 ,  B23K35/3006 ,  B23K35/3602 ,  B23K2201/36 ,  C22C32/0021 ,  H01B1/22 ,  H01L23/049 ,  H01L23/3735 ,  H01L24/05 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/35 ,  H01L24/37 ,  H01L24/40 ,  H01L24/72 ,  H01L24/83 ,  H01L25/072 ,  H01L2224/04026 ,  H01L2224/05638 ,  H01L2224/27318 ,  H01L2224/2732 ,  H01L2224/29294 ,  H01L2224/293 ,  H01L2224/29339 ,  H01L2224/29344 ,  H01L2224/29347 ,  H01L2224/29369 ,  H01L2224/29387 ,  H01L2224/2949 ,  H01L2224/32225 ,  H01L2224/32238 ,  H01L2224/32245 ,  H01L2224/33181 ,  H01L2224/371 ,  H01L2224/40225 ,  H01L2224/83013 ,  H01L2224/83203 ,  H01L2224/8322 ,  H01L2224/83222 ,  H01L2224/83438 ,  H01L2224/83801 ,  H01L2224/8384 ,  H01L2224/84801 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/0102 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/01058 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/15787 ,  H05K3/321 ,  H05K2203/1131 ,  H01L2924/20271 ,  H01L2924/05432 ,  H01L2924/0541 ,  H01L2924/01108 ,  H01L2924/00012 ,  H01L2924/00014

摘要： Die Erfindung beschreibt ein Edelmetallverbindungsmittel mit einem Feststoffanteil und einem Flüssiganteil mit einem zugeordneten Mischungsverhältnis in Volumenprozent von 99,5:0,5 bis 80:20 der beiden. Hierbei weist der Feststoffanteil einen Volumenanteil an einer ersten Komponente Silber von 60% bis 95% und einen Volumenanteil an einer zweiten Komponente Silberoxid von 5% bis 40% auf. Die jeweiligen Komponenten des Feststoffanteils liegen als Partikel mit Längenabmessungen zwischen 50nm und 20µm vor. Die Verwendung des Edelmetallverbindungsmittels dient der Ausbildung einer stoffschlüssigen Verbindung zweier metallischer Verbindungspartner, wobei die Ausbildung der Verbindung durch Wärmeeinwirkung erfolgt.

摘要翻译： 贵金属紧固件（60，62）包括固体和由99.5两种组分的体积与混合比相关联的液体成分：0.5-80：20，其中该固体组分在60-95（体积）包含银作为第一组分 ％和氧化银作为在5-40体积％的第二组分和固体组分的颗粒的respectivement部件具有50nm至20微米的线性尺寸。 一个独立的claimsoft包括用于贵金属的紧固件，其包括应用程序（I）的方法：在上的第一连接伙伴的第一表面上的金属层的形式布置的（I）; 在所述层的第二表面上的第二连接伙伴的装置; 和热加载与170〜230℃]℃的温度下该层，以产生在所述两个连接伙伴之间导电连接。

公开(公告)号：EP3249022A4

公开(公告)日：2018-06-20

申请号：EP16740213

申请日：2016-01-20

申请人： SEKISUI CHEMICAL CO LTD

发明人： TANIKAWA MITSURU ,  WATANABE TAKASHI ,  FUJITA YUSUKE ,  FUJITA YOSHITO ,  YAMADA TASUKU

IPC分类号： C09J4/02 ,  C09J5/06 ,  C09J11/06 ,  C09J163/00 ,  H01L21/52

CPC分类号： C09D133/14 ,  C08G59/4215 ,  C08G59/5033 ,  C08G59/686 ,  C08L33/08 ,  C09D11/101 ,  C09D11/107 ,  C09D11/30 ,  C09D11/52 ,  C09D133/10 ,  C09J5/04 ,  C09J5/06 ,  C09J9/02 ,  C09J133/10 ,  C09J133/14 ,  C09J163/00 ,  C09J171/12 ,  C09J201/02 ,  C09J2203/326 ,  C09J2205/114 ,  C09J2205/31 ,  C09J2433/00 ,  C09J2461/00 ,  C09J2463/00 ,  H01L21/52 ,  H01L24/27 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L24/91 ,  H01L2224/2741 ,  H01L2224/2783 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2224/83026 ,  H01L2224/8322 ,  H01L2224/83359 ,  H01L2224/83862 ,  H01L2224/83947 ,  H01L2924/00014 ,  H01L2224/05599 ,  H01L2224/45099 ,  H01L2224/85399 ,  C08L33/04

摘要： Provided is an inkjet adhesive which is applied using an inkjet device, wherein the adhesive can suppress generation of voids in the adhesive layer and, after bonding, can enhance adhesiveness, moisture-resistant adhesion reliability, and cooling/heating cycle reliability. An inkjet adhesive according to the present invention comprises a photocurable compound, a photo-radical initiator, a thermosetting compound having one or more cyclic ether groups or cyclic thioether groups, and a compound capable of reacting with the thermosetting compound, and the compound capable of reacting with the thermosetting compound contains aromatic amine.