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公开(公告)号：JPWO2010125800A1
公开(公告)日：2012-10-25
申请号：JP2010538241
申请日：2010-04-27
Applicant: パナソニック株式会社
IPC: H01L21/52
CPC classification number: H01L23/49513 , B23K1/0016 , B23K35/0233 , B23K35/0238 , B23K35/264 , B23K35/325 , B32B15/01 , C22C12/00 , H01L24/29 , H01L24/32 , H01L24/48 , H01L24/73 , H01L24/83 , H01L2224/2908 , H01L2224/29084 , H01L2224/29101 , H01L2224/29111 , H01L2224/29113 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2224/83801 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01019 , H01L2924/01024 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01322 , H01L2924/0133 , H01L2924/014 , H01L2924/04953 , H01L2924/10329 , H01L2924/1305 , H01L2924/13055 , H01L2924/181 , H01L2924/00 , H01L2924/00012 , H01L2924/01083 , H01L2924/00015 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
Abstract: 半導体素子(102)の表面(102b)に、結晶格子がBiを主成分とする接合材料(106)とは異なる金属の層(105)を配置すると共に、結晶格子が接合材料(106)とは異なる金属の前記層(105)と半導体素子(102)の表面(102b)との間に、接合材料(106)との化合物生成熱の値が正の元素の層(104)を配置することにより、半導体素子102に、結晶格子が接合材料(106)とは異なる金属の前記層(105)の成分が拡散されることを防止する。
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公开(公告)号：JP4205260B2
公开(公告)日：2009-01-07
申请号：JP19756199
申请日：1999-07-12
Applicant: パナソニック株式会社
CPC classification number: H01L24/97 , H01L24/73 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2224/97 , H01L2924/01029 , H01L2924/01078 , H01L2924/181 , H01L2924/3511 , H01L2924/00014 , H01L2224/85 , H01L2224/83 , H01L2924/00 , H01L2924/00012
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公开(公告)号：JP5482214B2
公开(公告)日：2014-05-07
申请号：JP2010008754
申请日：2010-01-19
Applicant: パナソニック株式会社
IPC: H01L23/373 , H01L25/07 , H01L25/18
CPC classification number: H01L24/29 , H01L23/49513 , H01L24/27 , H01L24/32 , H01L24/48 , H01L24/73 , H01L24/83 , H01L24/85 , H01L2224/29 , H01L2224/29101 , H01L2224/2929 , H01L2224/29313 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2224/83101 , H01L2224/83192 , H01L2224/83439 , H01L2224/83444 , H01L2224/83455 , H01L2224/83464 , H01L2224/838 , H01L2224/85 , H01L2924/00013 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01019 , H01L2924/01023 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01327 , H01L2924/0133 , H01L2924/014 , H01L2924/10252 , H01L2924/10253 , H01L2924/10271 , H01L2924/10272 , H01L2924/10329 , H01L2924/1033 , H01L2924/181 , H01L2924/00 , H01L2924/01014 , H01L2924/01007 , H01L2924/01031 , H01L2924/01013 , H01L2924/01025 , H01L2924/01015 , H01L2924/01016 , H01L2924/01034 , H01L2924/3512 , H01L2924/01028 , H01L2224/29099 , H01L2224/29199 , H01L2224/29299 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
Abstract: A manufacturing method for a bonded structure, in which a semiconductor device is bonded to an electrode by a bonding portion, the method including: first mounting a solder ball, in which a surface of a Bi ball is coated with Ni plating, on the electrode that is heated to a temperature equal to or more than a melting point of Bi; second pressing the solder ball against the heated electrode, cracking the Ni plating, spreading molten Bi on a surface of the heated electrode, and forming a bonding material containing Bi-based intermetallic compound of Bi and Ni; and third mounting the semiconductor device on the bonding material.
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公开(公告)号：JP4362902B2
公开(公告)日：2009-11-11
申请号：JP24752099
申请日：1999-09-01
Applicant: パナソニック株式会社
CPC classification number: H01L2224/48091 , H01L2224/48247 , H01L2924/00014
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公开(公告)号：JP5362719B2
公开(公告)日：2013-12-11
申请号：JP2010517680
申请日：2009-05-22
Applicant: パナソニック株式会社
IPC: H01L21/52
CPC classification number: B23K1/0016 , B23K35/0233 , B23K35/0238 , B23K35/264 , B23K2201/40 , C22C12/00 , C22C19/03 , H01L23/488 , H01L23/49503 , H01L23/49513 , H01L24/05 , H01L24/29 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/83 , H01L2224/0401 , H01L2224/04042 , H01L2224/05554 , H01L2224/05556 , H01L2224/29101 , H01L2224/29113 , H01L2224/2919 , H01L2224/32245 , H01L2224/32257 , H01L2224/45124 , H01L2224/48091 , H01L2224/48247 , H01L2224/48699 , H01L2224/49111 , H01L2224/49171 , H01L2224/73265 , H01L2224/838 , H01L2924/00014 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01022 , H01L2924/01028 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01061 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01327 , H01L2924/0133 , H01L2924/014 , H01L2924/0665 , H01L2924/10162 , H01L2924/10253 , H01L2924/10272 , H01L2924/1033 , H01L2924/1305 , H01L2924/13055 , H01L2924/15153 , H01L2924/15165 , H01L2924/181 , H01L2924/19041 , H01L2924/19042 , H01L2924/00 , H01L2924/01083 , H01L2924/3512 , H01L2924/00012
Abstract: A joint structure joins an electronic element 12 included in an electronic component to an electrode 14 included in that electronic component. The joint structure includes a solder layer, which contains 0.2 to 6% by weight of copper, 0.02 to 0.2% by weight of germanium and 93.8 to 99.78% by weight of bismuth, a nickel layer provided between the solder layer and the electrode, and a barrier layer provided between the nickel layer and the solder layer. Here, the barrier layer is formed so as to have an average thickness of from 0.5 to 4.5 μm after the electronic element and the electrode are joined by the solder layer.
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Patent Agency Ranking
公开(公告)号：JPWO2011010450A1
公开(公告)日：2012-12-27
申请号：JP2011523550
申请日：2010-07-20
Applicant: パナソニック株式会社
CPC classification number: H01L24/29 , H01L24/27 , H01L24/32 , H01L24/48 , H01L24/83 , H01L2224/27462 , H01L2224/27472 , H01L2224/2901 , H01L2224/29019 , H01L2224/29082 , H01L2224/29101 , H01L2224/29109 , H01L2224/29111 , H01L2224/29113 , H01L2224/29187 , H01L2224/32245 , H01L2224/32257 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2224/83005 , H01L2224/83191 , H01L2224/83385 , H01L2224/838 , H01L2224/94 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01015 , H01L2924/01019 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01057 , H01L2924/01074 , H01L2924/01078 , H01L2924/01082 , H01L2924/0132 , H01L2924/0133 , H01L2924/014 , H01L2924/10252 , H01L2924/10253 , H01L2924/10271 , H01L2924/10272 , H01L2924/10329 , H01L2924/1033 , H01L2924/10335 , H01L2924/10375 , H01L2924/10376 , H01L2924/1305 , H01L2924/13055 , H01L2924/157 , H01L2924/181 , H01L2924/3512 , H01L2924/01014 , H01L2924/01007 , H01L2924/01031 , H01L2924/01049 , H01L2924/01016 , H01L2924/01083 , H01L2924/01034 , H01L2924/00012 , H01L2924/00 , H01L2224/27 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
Abstract: 本発明の半導体部品は、半導体素子(101)と、半導体素子(101)の一方の面に形成された、Biを主成分とする接合材料を含む接合層(102)とを備え、接合層(102)の半導体素子(101)と接する面とは反対側の面に、凸部(103)が形成されている半導体部品(100)である。この半導体部品(100)を用い、接合層(102)に対向して配置された電極(201)とを接合することにより、ボイドの発生を抑制することが出来る。
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公开(公告)号：JPWO2010122795A1
公开(公告)日：2012-10-25
申请号：JP2011510226
申请日：2010-04-22
Applicant: パナソニック株式会社
IPC: H01L21/52
CPC classification number: H01L21/563 , H01L23/3733 , H01L23/3736 , H01L23/49568 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/48 , H01L24/83 , H01L2224/29 , H01L2224/291 , H01L2224/29101 , H01L2224/29111 , H01L2224/29113 , H01L2224/29213 , H01L2224/29309 , H01L2224/29311 , H01L2224/29318 , H01L2224/29339 , H01L2224/29347 , H01L2224/32245 , H01L2224/48227 , H01L2224/73203 , H01L2224/83101 , H01L2224/83192 , H01L2224/838 , H01L2924/00013 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01027 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01058 , H01L2924/01068 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01322 , H01L2924/0133 , H01L2924/014 , H01L2924/10253 , H01L2924/1305 , H01L2924/13055 , Y10T428/25 , Y10T428/256 , H01L2924/00 , H01L2924/01083 , H01L2924/00012 , H01L2224/29099 , H01L2224/29199 , H01L2224/29299 , H01L2224/2929 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
Abstract: 本発明は、半導体素子と支持板との十分な接合強度を確保しつつ、半導体素子からの発熱の支持体への放熱性を向上させる半導体装置を提供することを課題とする。本発明に係る半導体装置は、支持板と、前記支持板上に形成された電極表面処理層と、半導体素子と、Biを主成分とする第1金属の内部に前記第1金属よりも融点が高い第2金属の粒子を含有しており、前記電極表面処理層と半導体素子とを接合するはんだ材料と、を備え、前記はんだ材料の前記半導体素子の中央部に対応する領域では前記第1金属よりも前記第2金属の組成比率が高く、前記中央部に対応する領域の外側の領域では前記第2金属よりも前記第1金属の組成比率が高く、前記中央部に対応する領域内での前記第2金属の組成比率が83.8原子%以上である。
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公开(公告)号：JP4590788B2
公开(公告)日：2010-12-01
申请号：JP2001196056
申请日：2001-06-28
Applicant: パナソニック株式会社
CPC classification number: H01L24/97 , H01L2221/6839 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2224/92247 , H01L2224/97 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/181 , H01L2924/351 , H01L2224/85 , H01L2924/00014 , H01L2224/83 , H01L2924/00 , H01L2924/00012
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公开(公告)号：JP5383795B2
公开(公告)日：2014-01-08
申请号：JP2011510226
申请日：2010-04-22
Applicant: パナソニック株式会社
CPC classification number: H01L21/563 , H01L23/3733 , H01L23/3736 , H01L23/49568 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/48 , H01L24/83 , H01L2224/29 , H01L2224/291 , H01L2224/29101 , H01L2224/29111 , H01L2224/29113 , H01L2224/29213 , H01L2224/29309 , H01L2224/29311 , H01L2224/29318 , H01L2224/29339 , H01L2224/29347 , H01L2224/32245 , H01L2224/48227 , H01L2224/73203 , H01L2224/83101 , H01L2224/83192 , H01L2224/838 , H01L2924/00013 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01027 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01058 , H01L2924/01068 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01322 , H01L2924/0133 , H01L2924/014 , H01L2924/10253 , H01L2924/1305 , H01L2924/13055 , Y10T428/25 , Y10T428/256 , H01L2924/00 , H01L2924/01083 , H01L2924/00012 , H01L2224/29099 , H01L2224/29199 , H01L2224/29299 , H01L2224/2929 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
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公开(公告)号：JP5227427B2
公开(公告)日：2013-07-03
申请号：JP2010550974
申请日：2010-06-17
Applicant: パナソニック株式会社
CPC classification number: C22C12/00 , B23K1/0016 , B23K1/20 , B23K35/264 , B23K35/362 , B23K2201/40 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/48 , H01L24/73 , H01L24/83 , H01L2224/291 , H01L2224/29101 , H01L2224/29111 , H01L2224/29113 , H01L2224/29118 , H01L2224/29144 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2224/83439 , H01L2224/838 , H01L2224/83805 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01015 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01061 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01322 , H01L2924/0133 , H01L2924/014 , H01L2924/10329 , H01L2924/1305 , H01L2924/13055 , H01L2924/15747 , H01L2924/181 , H01L2924/351 , H01L2924/00 , H01L2924/01014 , H01L2924/00012 , H01L2924/01007 , H01L2924/01031 , H01L2924/01049 , H01L2924/01016 , H01L2924/01083 , H01L2924/01034 , H01L2924/3512 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
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