公开(公告)号：US20220113198A1

公开(公告)日：2022-04-14

申请号：US17070803

申请日：2020-10-14

Applicant: Applied Materials, Inc.

Inventor： Shuran SHENG ,  Lin ZHANG ,  Joseph C. WERNER

IPC: G01K3/00 ,  G01K3/10 ,  G03F7/42

Abstract: Embodiments herein provide methods of monitoring temperatures of fluid delivery conduits for delivering fluids to, and other components external to, a processing volume of a processing chamber used in electronic device fabrication manufacturing, and monitoring systems related thereto. In one embodiment, a method includes receiving, at the temperature monitoring system (TMS) controller, information from a first plurality of temperature sensors and a second plurality of temperature sensors, comparing, using the TMS controller, the temperature information to one or more pre-determined control limits, and communicating, using the TMS controller, an out-of-control event to a user. Generally, the temperature monitoring system features the first and second pluralities of temperature sensors, the TMS controller, a first connection module, and a second connection module.

公开(公告)号：US20180144966A1

公开(公告)日：2018-05-24

申请号：US15812922

申请日：2017-11-14

Applicant: Applied Materials, Inc.

Inventor： Kyung-Tae KIM ,  Su Ho CHO ,  Tsunehiko KITAMURA ,  Shinobu ABE ,  Shuran SHENG

IPC: H01L21/677

Abstract: In one embodiment, a chamber is provided that includes a chamber body and a lid defining an interior volume, a frame within the interior volume, the frame sized to receive a plurality of substrates in a first orientation, and a rotational drive assembly coupled to the frame for rotating the frame and flipping each of the plurality of substrates to a second orientation that is different than the first orientation.

公开(公告)号：US20240412948A1

公开(公告)日：2024-12-12

申请号：US18330687

申请日：2023-06-07

Applicant: Applied Materials, Inc.

Inventor： Shuran SHENG ,  Ruiping WANG ,  Raymond Hoiman HUNG ,  Ying W. WANG ,  Ke ZHENG

IPC: H01J37/32

Abstract: Embodiments of the disclosure provided herein include a system and method for plasma cleaning and activation using hybrid bonding. The system includes a processing chamber, a substrate support configured to support a substrate during hybrid bonding substrate processing, a gas delivery system coupled to the processing chamber having at least one radical generator, and a controller configured to cause the substrate processing system to form a first layer on a first substrate, dissociate a gas in the at least one radical generator to form a plasma, flow the plasma into the processing volume of the processing chamber for a period of time, exhaust the plasma, by products, and effluent gas from the processing volume after the period of time, and adhere a second layer disposed on a second substrate onto the first layer using a hybrid bonding technique.

公开(公告)号：US20200098702A1

公开(公告)日：2020-03-26

申请号：US16533145

申请日：2019-08-06

Applicant: Applied Materials, Inc.

Inventor： Shuran SHENG ,  Lin ZHANG ,  Joseph C. WERNER

IPC: H01L23/00 ,  H01L27/11582 ,  H01L21/02 ,  C23C16/50 ,  C23C14/35 ,  C23C14/10 ,  C23C14/06 ,  C23C16/40 ,  C23C16/34 ,  C23C16/26

Abstract: A method and apparatus for forming a backside coating on a substrate to counteract stresses from a previously deposited film is disclosed. In one embodiment, a method for flattening a bowed substrate includes providing a substrate having a film stack formed on a first major surface thereof, wherein the substrate comprises a bowed orientation, and forming a coating a second major surface of the substrate, wherein the coating is configured to counter stresses produced by the film stack and flattens the substrate from the bowed orientation.

公开(公告)号：US20170069493A1

公开(公告)日：2017-03-09

申请号：US15256054

申请日：2016-09-02

Applicant: Applied Materials, Inc.

Inventor： Shuran SHENG ,  Su Ho CHO

IPC: H01L21/02 ,  C23C16/52 ,  C23C16/455 ,  C23C16/515 ,  C23C16/24 ,  C23C16/505

CPC classification number: C23C16/52 ,  C23C16/24 ,  C23C16/45523 ,  C23C16/45565 ,  C23C16/5096 ,  C23C16/515 ,  H01J37/32 ,  H01J37/32146 ,  H01J37/32357 ,  H01J37/32449 ,  H01L21/02532 ,  H01L21/0259 ,  H01L21/0262

Abstract: The present disclosure generally relates to an improved method for forming low resistivity crystalline silicon films for display devices. The processing chamber in which the low resistivity crystalline silicon film is formed is pressurized to a predetermined pressure and a radio frequency power at a predetermined power level is delivered to the processing chamber. In addition, feeding locations of one or more VHF power generator and controlling of each VHF power generator via phase modulation and sweeping allows for plasma uniformity improvements by compensating for the non-uniformity of the thin film patterns produced by the chamber, due to the standing wave effect. Diffuser plate having two curved surfaces helps improve crystallinity uniformity.

Abstract translation: 本公开总体上涉及用于形成用于显示装置的低电阻率晶体硅膜的改进方法。 其中形成低电阻率晶体硅膜的处理室被加压到预定压力，并且将预定功率电平的射频功率传送到处理室。 另外，通过相位调制和扫描，一个或多个VHF功率发生器的馈电位置和每个VHF发电机的控制允许通过补偿腔室产生的薄膜图案的不均匀性而改善等离子体均匀性 波浪效应。 具有两个曲面的扩散板有助于提高结晶度的均匀性。

公开(公告)号：US20210280389A1

公开(公告)日：2021-09-09

申请号：US16321660

申请日：2017-07-31

Applicant: Applied Materials, Inc.

Inventor： Shuran SHENG ,  Shinobu ABE ,  Keita KUWAHARA ,  Su Ho CHO

IPC: H01J37/32 ,  C23C16/458 ,  C23C16/505

Abstract: Embodiments disclosed herein generally relate to a plasma processing system for modifying the uniformity pattern of a thin film deposited in a plasma processing chamber which includes at least one VHF power generator coupled to a diffuser within the plasma processing chamber. The feeding location offset of each VHF power generator and the controlling of each VHF power generator via phase modulation and sweeping allows for plasma uniformity improvements by compensating for the non-uniformity of the thin film patterns produced by the chamber, due to the standing wave effect. The power distribution between the multiple VHF power generators coupled to and/or disposed at different locations on the backing plate may be produced by dynamic phase modulation between the VHF power applied at the different coupling points.

公开(公告)号：US20190252161A1

公开(公告)日：2019-08-15

申请号：US15898133

申请日：2018-02-15

Applicant: Applied Materials, Inc.

Inventor： Shuran SHENG ,  Shinobu ABE ,  Keita KUWAHARA ,  Chang Hee SHIN ,  Su Ho CHO

IPC: H01J37/32 ,  C23C16/509

CPC classification number: H01J37/32669 ,  C23C16/509 ,  H01J37/32183 ,  H01J37/3244 ,  H01J2237/3321 ,  H01J2237/3323

Abstract: An apparatus for plasma processing of substrates is disclosed. A plasma processing chamber is provided which includes a chamber body and a lid. The lid includes a faceplate coupled to a backing plate. The faceplate and the backing plate are disposed within a processing volume defined by the chamber body and the lid. One or more ferrite blocks are coupled to the backing plate to modulate an electromagnetic field created by an RF current from an RF generator. A gas feed assembly including a gas source, a remote plasma source, and a zero field feed through are coupled to, and in fluid communication with, the processing volume through the backing plate and faceplate.

公开(公告)号：US20160077025A1

公开(公告)日：2016-03-17

申请号：US14521345

申请日：2014-10-22

Applicant: Applied Materials, Inc.

Inventor： Lin ZHANG ,  Shuran SHENG ,  Andrew V. LE

IPC: G01N23/201 ,  G01N23/18 ,  G01T7/08 ,  G01N23/083

CPC classification number: G01N23/201 ,  G01N23/207 ,  G01N2223/071 ,  G01N2223/602 ,  G01T7/08 ,  G03F7/70625 ,  H01L22/12

Abstract: An apparatus for integrating metrology and method for using the same are disclosed. The apparatus includes a multi-chamber system having a transfer chamber, a deposition chamber, an etch chamber and a metrology chamber, and a robot configured to transfer a substrate between the deposition chamber or etch chamber and the metrology chamber.

Abstract translation: 公开了一种用于集成度量的装置及其使用方法。 该装置包括具有传送室，沉积室，蚀刻室和计量室的多室系统，以及被配置为在沉积室或蚀刻室与计量室之间传送衬底的机器人。

公开(公告)号：US20230378006A1

公开(公告)日：2023-11-23

申请号：US17751511

申请日：2022-05-23

Applicant: Applied Materials, Inc.

Inventor： Shuran SHENG ,  Eric HOLLAR ,  Sock Hoon LIM ,  Yu YANG ,  Ralph P. ANTONIO ,  Gu LIU

IPC: H01L21/66 ,  H01L21/02 ,  G01N21/95 ,  G01J3/44

CPC classification number: H01L22/34 ,  H01L22/12 ,  H01L21/02041 ,  G01N21/9501 ,  G01J3/44 ,  G06N20/00

Abstract: Methods and systems for monitoring wafer processing results continuously and in real-time. In some embodiments, a system may comprise at least one non-active chamber with at least one feedthrough access port which is configured to interact with a metrology apparatus. The feedthrough access port has a surface exposed to an inner volume of the non-active chamber and has a fluorine-based coating covering the surface. The non-active chamber has a wafer access port to one or more other chambers. The metrology apparatus is positioned external to the non-active chamber and is oriented to detect metrology data through one of the feedthrough access ports. A data collection apparatus is connected to the metrology apparatus and configured to continuously receive data from the metrology apparatus.

公开(公告)号：US20220344135A1

公开(公告)日：2022-10-27

申请号：US17242059

申请日：2021-04-27

Applicant: Applied Materials, Inc.

Inventor： Shuran SHENG ,  Lin ZHANG ,  Jiyong HUANG ,  Jang Seok OH ,  Joseph C. WERNER ,  Nitin KHURANA ,  Ganesh BALASUBRAMANIAN ,  Jennifer Y. SUN ,  Xinhai HAN ,  Zhijun JIANG

IPC: H01J37/32 ,  B08B7/00 ,  C23C16/44

Abstract: Examples disclosed herein relate to a method and apparatus for cleaning and repairing a substrate support having a heater disposed therein. A method includes (a) cleaning a surface of a substrate support having a bulk layer, the substrate support is disposed in a processing environment configured to process substrates. The cleaning process includes forming a plasma at a high temperature from a cleaning gas mixture having a fluorine containing gas and oxygen. The method includes (b) removing oxygen radicals from the processing environment with a treatment plasma formed from a treatment gas mixture. The treatment gas mixture includes the fluorine containing gas. The method further includes (c) repairing an interface of the substrate support and the bulk layer with a post-treatment plasma. The post-treatment plasma is formed from a post-treatment gas mixture including a nitrogen containing gas. The high temperature is greater than or equal to about 500 degrees Celsius.