公开(公告)号：US09337436B2

公开(公告)日：2016-05-10

申请号：US14736942

申请日：2015-06-11

Applicant: GLOBALFOUNDRIES INC.

Inventor： Keith E. Fogel ,  Jeehwan Kim ,  Devendra K. Sadana ,  Tze-bin Song

IPC: H01L51/48 ,  H01L51/44 ,  H01L51/00 ,  H01L51/42

CPC classification number: H01L51/442 ,  H01L51/0013 ,  H01L51/0021 ,  H01L51/0024 ,  H01L51/0037 ,  H01L51/42 ,  H01L51/445 ,  Y02E10/549 ,  Y02P70/521

Abstract: A method for fabricating a photovoltaic device includes forming an adhesion layer on a substrate, forming a material layer on the adhesion layer and applying release tape to the material layer. The substrate is removed at a weakest interface between the adhesion layer and the substrate by mechanically pulling the release tape to form a transfer substrate including the adhesion layer, the material layer and the release tape. The transfer substrate is transferred to a target substrate to contact the adhesion layer to the target substrate. The transfer substrate includes a material sensitive to formation processes of the transfer substrate such that exposure to the formation processes of the transfer substrate is avoided by the target substrate.

公开(公告)号：US09459797B2

公开(公告)日：2016-10-04

申请号：US14153728

申请日：2014-01-13

Applicant: GLOBALFOUNDRIES INC.

Inventor： Christos Dimitrakopoulos ,  Augustin J. Hong ,  Jeehwan Kim ,  Devendra K. Sadana ,  Kuen-Ting Shiu

IPC: H01L31/02 ,  G06F3/06 ,  H04W8/06 ,  H01L31/0236 ,  G06F11/07 ,  G06F12/02 ,  H04L29/08 ,  G06F11/10 ,  H04W8/04

CPC classification number: G06F3/061 ,  G06F3/064 ,  G06F3/0647 ,  G06F3/0653 ,  G06F3/0689 ,  G06F11/0727 ,  G06F11/1076 ,  G06F12/02 ,  H01L31/02366 ,  H04L67/1002 ,  H04W8/04 ,  H04W8/065 ,  Y02E10/50

Abstract: A method for fabricating a photovoltaic device includes applying a diblock copolymer layer on a substrate and removing a first polymer material from the diblock copolymer layer to form a plurality of distributed pores. A pattern forming layer is deposited on a remaining surface of the diblock copolymer layer and in the pores in contact with the substrate. The diblock copolymer layer is lifted off and portions of the pattern forming layer are left in contact with the substrate. The substrate is etched using the pattern forming layer to protect portions of the substrate to form pillars in the substrate such that the pillars provide a radiation absorbing structure in the photovoltaic device.

Abstract translation: 一种制造光伏器件的方法包括在基片上涂布二嵌段共聚物层，并从二嵌段共聚物层除去第一聚合物材料以形成多个分布孔。 图案形成层沉积在二嵌段共聚物层的剩余表面上和与基材接触的孔中。 剥离二嵌段共聚物层，使图案形成层的一部分与基板保持接触。 使用图案形成层蚀刻衬底以保护衬底的部分以在衬底中形成柱，使得柱在光伏器件中提供辐射吸收结构。

公开(公告)号：US09666674B2

公开(公告)日：2017-05-30

申请号：US14691270

申请日：2015-04-20

Applicant: GLOBALFOUNDRIES INC.

Inventor： Christos D. Dimitrakopoulos ,  Keith E. Fogel ,  Jeehwan Kim ,  Hongsik Park

IPC: H01L29/06 ,  H01L29/16 ,  H01L21/027 ,  H01L21/20 ,  B32B9/04 ,  B32B37/26 ,  B32B38/10 ,  C01B31/00 ,  C01B31/04 ,  B32B9/00 ,  H01L23/532

CPC classification number: H01L29/1606 ,  B32B9/007 ,  B32B9/041 ,  B32B38/10 ,  B32B2307/202 ,  B32B2307/704 ,  C01B32/188 ,  H01L21/0272 ,  H01L21/2007 ,  H01L23/53276 ,  H01L2924/0002 ,  Y10T156/11 ,  Y10T156/1153 ,  Y10T428/24612 ,  Y10T428/26 ,  H01L2924/00

Abstract: A method for transfer of a two-dimensional material includes forming a spreading layer of a two-dimensional material on a first substrate. The spreading layer has at least one monolayer. A stressor layer is formed on the spreading layer. The stressor layer is configured to apply stress to a closest monolayer of the spreading layer. The closest monolayer is exfoliated by mechanically splitting the spreading layer wherein at least the closest monolayer remains on the stressor layer. The at least one monolayer is stamped against a second substrate to adhere remnants of the two-dimensional material on the at least one monolayer to the second substrate to provide a single monolayer on the stressor layer. The single monolayer is transferred to a third substrate.

公开(公告)号：US09574287B2

公开(公告)日：2017-02-21

申请号：US14038139

申请日：2013-09-26

Applicant: GLOBALFOUNDRIES INC.

Inventor： Can Bayram ,  Christos D. Dimitrakopoulos ,  Keith E. Fogel ,  Jeehwan Kim ,  John A. Ott ,  Devendra K. Sadana

IPC: C30B25/00 ,  C30B25/18 ,  C30B29/40 ,  H01L21/02 ,  H01L29/16 ,  H01L33/00 ,  H01L33/32 ,  C30B29/02 ,  H01L33/12

CPC classification number: C30B25/18 ,  C30B25/183 ,  C30B29/02 ,  C30B29/406 ,  H01L21/0254 ,  H01L29/1606 ,  H01L33/0025 ,  H01L33/0079 ,  H01L33/12 ,  H01L33/32

Abstract: A method of forming an epitaxial semiconductor material that includes forming a graphene layer on a semiconductor and carbon containing substrate and depositing a metal containing monolayer on the graphene layer. An epitaxial layer of a gallium containing material is formed on the metal containing monolayer. A layered stack of the metal containing monolayer and the epitaxial layer of gallium containing material is cleaved from the graphene layer that is present on the semiconductor and carbon containing substrate.

Abstract translation: 一种形成外延半导体材料的方法，其包括在半导体和含碳衬底上形成石墨烯层并在所述石墨烯层上沉积含金属的单层。 在含金属单层上形成含镓材料的外延层。 含有金属的单层的层叠堆叠和含镓材料的外延层从存在于半导体和含碳衬底上的石墨烯层切割。

公开(公告)号：US09716207B2

公开(公告)日：2017-07-25

申请号：US13948645

申请日：2013-07-23

Applicant: GLOBALFOUNDRIES INC.

Inventor： Keith E. Fogel ,  Jeehwan Kim ,  David B. Mitzi ,  Mark T. Winkler

IPC: H01L21/00 ,  H01L31/18 ,  H01L31/0224 ,  H01L31/0236 ,  H01L31/032 ,  H01L31/0749

CPC classification number: H01L31/1888 ,  H01L31/022483 ,  H01L31/02366 ,  H01L31/0326 ,  H01L31/0749 ,  Y02E10/541

Abstract: A method for forming a photovoltaic device includes forming a photovoltaic absorption stack on a substrate including one or more of I-III-VI2 and I2-II-IV-VI4 semiconductor material. A transparent conductive contact layer is deposited on the photovoltaic absorption stack at a temperature less than 200 degrees Celsius. The transparent conductive contact layer has a thickness of about one micron and is formed on a front light-receiving surface. The surface includes pyramidal structures due to an as deposited thickness. The transparent conductive contact layer is wet etched to further roughen the front light-receiving surface to reduce reflectance.

公开(公告)号：US09337274B2

公开(公告)日：2016-05-10

申请号：US13894954

申请日：2013-05-15

Applicant: GLOBALFOUNDRIES INC.

Inventor： Christos D. Dimitrakopoulos ,  Keith E. Fogel ,  Jeehwan Kim ,  Hongsik Park

IPC: H01L29/06 ,  H01L21/027 ,  H01L21/20 ,  B32B37/14 ,  C01B31/00 ,  B32B38/10 ,  B32B9/04 ,  H01L29/16 ,  B32B37/26 ,  C01B31/04 ,  B32B9/00 ,  H01L23/532

CPC classification number: H01L29/1606 ,  B32B9/007 ,  B32B9/041 ,  B32B38/10 ,  B32B2307/202 ,  B32B2307/704 ,  C01B32/188 ,  H01L21/0272 ,  H01L21/2007 ,  H01L23/53276 ,  H01L2924/0002 ,  Y10T156/11 ,  Y10T156/1153 ,  Y10T428/24612 ,  Y10T428/26 ,  H01L2924/00

Abstract: A method for transfer of a two-dimensional material includes forming a spreading layer of a two-dimensional material on a first substrate. The spreading layer has at least one monolayer. A stressor layer is formed on the spreading layer. The stressor layer is configured to apply stress to a closest monolayer of the spreading layer. The closest monolayer is exfoliated by mechanically splitting the spreading layer wherein at least the closest monolayer remains on the stressor layer. The at least one monolayer is stamped against a second substrate to adhere remnants of the two-dimensional material on the at least one monolayer to the second substrate to provide a single monolayer on the stressor layer. The single monolayer is transferred to a third substrate.