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公开(公告)号:US08692134B2
公开(公告)日:2014-04-08
申请号:US13210392
申请日:2011-08-16
申请人: Jie Yang , Qingchun He , Hanmin Zhang
发明人: Jie Yang , Qingchun He , Hanmin Zhang
IPC分类号: H05K1/11
CPC分类号: H01L23/4952 , H01L24/45 , H01L24/48 , H01L2224/45015 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/4811 , H01L2224/48247 , H01L2224/48465 , H01L2224/48992 , H01L2224/85138 , H01L2924/00013 , H01L2924/00014 , H01L2924/01029 , H01L2924/01033 , H01L2924/01079 , H01L2924/01082 , H01L2924/14 , H01L2924/181 , H01L2924/00 , H01L2224/13099 , H01L2224/13599 , H01L2224/05599 , H01L2224/05099 , H01L2224/29099 , H01L2224/29599 , H01L2924/20753 , H01L2224/85399
摘要: An electrical connection includes a first wire bonded to adjacent bond pads proximate to an edge of a die and a second wire having one end bonded to a die bond pad distal to the die edge and a second end bonded to a lead finger of a lead frame or a connection pad of a substrate. The second wire crosses and is supported by the first wire. The first wire acts as a brace that prevents the second wire from touching the edge of the die. The first wire also prevents the second wire from excessive lateral movement during encapsulation.
摘要翻译: 电连接包括结合到靠近模具边缘的相邻接合焊盘的第一引线和第二引线,其中一端接合到芯片边缘远离管芯接合焊盘,第二端接合引线框架的引线指 或基板的连接垫。 第二根线穿过并被第一根线支撑。 第一线作为防止第二线接触芯片边缘的支架。 第一根线也防止了第二根线在封装期间过度的横向运动。
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公开(公告)号:US20150235969A1
公开(公告)日:2015-08-20
申请号:US14551098
申请日:2014-11-24
申请人: Hanmin Zhang , Qingchun He , Dehong Ye , Fei Zong
发明人: Hanmin Zhang , Qingchun He , Dehong Ye , Fei Zong
CPC分类号: H01L23/562 , H01L21/78 , H01L22/12 , H01L24/05 , H01L24/94 , H01L2224/033 , H01L2224/034 , H01L2224/0345 , H01L2224/036 , H01L2224/0401 , H01L2224/04026 , H01L2224/05552 , H01L2224/05553 , H01L2224/05555 , H01L2224/05564 , H01L2224/131 , H01L2224/94 , H01L2224/03 , H01L2924/00012 , H01L2924/014 , H01L2924/00014
摘要: A semiconductor wafer having multiple dies has a partially metallized backside. After wafer dicing, each of the multiple dies has, on its backside, a metallized area surrounded by a peripheral non-metallization ring. The non-metallization ring allows for easier optical inspection of the dies for determining the extent of any backside chipping caused by the wafer dicing. The peripheral non-metallization rings are generated by not metalizing the areas flanking the saw streets of the wafer.
摘要翻译: 具有多个管芯的半导体晶片具有部分金属化的背面。 在晶片切割之后,多个管芯中的每一个在其背面具有被外围非金属化环包围的金属化区域。 非金属化环允许更容易地对模具进行光学检查,以确定由晶片切割引起的任何背面切屑的程度。 周边的非金属化环是通过不使晶片的锯条的两侧的区域金属化而产生的。
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3.
公开(公告)号:US20140103096A1
公开(公告)日:2014-04-17
申请号:US13865185
申请日:2013-04-17
申请人: Hanmin Zhang , Qingchun He , Liqiang Xu , Fei Zong
发明人: Hanmin Zhang , Qingchun He , Liqiang Xu , Fei Zong
IPC分类号: H01L23/00
CPC分类号: H01L24/85 , H01L22/12 , H01L22/20 , H01L24/29 , H01L24/32 , H01L24/48 , H01L24/78 , H01L2224/05554 , H01L2224/2919 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/48456 , H01L2224/48472 , H01L2224/73265 , H01L2224/78313 , H01L2224/78315 , H01L2224/789 , H01L2224/78901 , H01L2224/85181 , H01L2224/859 , H01L2224/92247 , H01L2924/00014 , H01L2924/3011 , H01L2924/00 , H01L2924/00012 , H01L2924/0665 , H01L2224/45099 , H01L2224/05599
摘要: A wire bonding machine and a method for testing wire bond connection s using the wire bonding machine. The method includes providing a semiconductor assembly that has a semiconductor die mounted to a substrate, each of which has bonding pads. The method includes bonding a wire to one of the bonding pads to form a first wire bond. A shear force then is applied to the first wire bond. A fault signal is generated when a sensor detects the first wire bond moving during application of the shear force.
摘要翻译: 引线接合机和使用引线接合机测试引线接合连接的方法。 该方法包括提供半导体组件,该半导体组件具有安装到衬底的半导体管芯,每个衬底具有接合焊盘。 该方法包括将导线接合到一个接合焊盘以形成第一引线接合。 然后将剪切力施加到第一线接合。 当传感器检测到在施加剪切力期间移动的第一线接合时,产生故障信号。
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公开(公告)号:US20110193207A1
公开(公告)日:2011-08-11
申请号:US13004031
申请日:2011-01-11
申请人: Zhaojun Tian , Qingchun He , Qiang Liu , Jie Yang , Shufeng Zhao
发明人: Zhaojun Tian , Qingchun He , Qiang Liu , Jie Yang , Shufeng Zhao
IPC分类号: H01L23/495
CPC分类号: H01L23/49541 , H01L23/3107 , H01L24/45 , H01L24/48 , H01L24/49 , H01L2224/05554 , H01L2224/45144 , H01L2224/45147 , H01L2224/48247 , H01L2224/49171 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01029 , H01L2924/01033 , H01L2924/01079 , H01L2924/01082 , H01L2924/14 , H01L2924/181 , H01L2924/00 , H01L2224/05599
摘要: A lead frame for providing electrical interconnection to a semiconductor die has a generally rectangular flag area having first and second major surfaces and four sides. The flag area is sized and shaped to receive a semiconductor die on one of the first and second major surfaces. A first row of leads is located adjacent to a first one of the four sides of the flag area and a second row of leads is located adjacent to a second one of the four sides of the flag area, where the second one of the four sides is adjacent to the first one of the four sides. The remaining two sides do not have any adjacent leads.
摘要翻译: 用于向半导体管芯提供电互连的引线框架具有大致矩形的标记区域,其具有第一和第二主表面和四个侧面。 标记区域的尺寸和形状被设计成在第一和第二主表面之一上接收半导体管芯。 第一排引线位于与标志区域的四个边中的第一个相邻的位置,并且第二排引线位于邻近标志区域的四个边的第二侧的位置,其中四个侧面中的第二个 毗邻四面的第一个。 剩下的两边没有任何相邻的导线。
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公开(公告)号:US20110241187A1
公开(公告)日:2011-10-06
申请号:US13018438
申请日:2011-02-01
申请人: Liping Guo , Qingchun He , Zhaojun Tian , Jie Yang
发明人: Liping Guo , Qingchun He , Zhaojun Tian , Jie Yang
IPC分类号: H01L23/495 , H01L21/48
CPC分类号: H01L23/3107 , H01L23/49503 , H01L23/49541 , H01L24/29 , H01L24/32 , H01L24/48 , H01L24/73 , H01L24/83 , H01L24/85 , H01L2224/27013 , H01L2224/291 , H01L2224/2919 , H01L2224/32245 , H01L2224/32257 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2224/83385 , H01L2224/85 , H01L2924/00014 , H01L2924/01046 , H01L2924/01079 , H01L2924/14 , H01L2924/15153 , H01L2924/181 , H01L2924/014 , H01L2924/00012 , H01L2924/00 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要: A lead frame having a recessed die bond area. The lead frame has top and bottom surfaces and a first lead frame thickness defined as the distance between the top and bottom surfaces. The lead frame has a die bond area surface located within a reduced die bond area. A second thickness is defined as the distance between the die bond area surface and the bottom surface. The second lead frame thickness is less than the first lead frame thickness such that a semiconductor die disposed and attached to the die bond area surface has a reduced overall package thickness. A side wall formed between the die bond area surface and the top surface contains the adhesive material used to attach the die, which reduces adhesive bleeding and prevents wire bonding contamination.
摘要翻译: 引线框架,具有凹陷的焊盘区域。 引线框架具有顶部和底部表面以及被定义为顶部和底部表面之间的距离的第一引线框架厚度。 引线框架具有位于减小的管芯接合区域内的管芯接合区域表面。 第二厚度被定义为管芯接合区域表面和底部表面之间的距离。 第二引线框架厚度小于第一引线框架厚度,使得设置并附接到管芯接合区域表面的半导体管芯具有减小的整体封装厚度。 形成在芯片接合区域表面和顶表面之间的侧壁包含用于附接模具的粘合材料,这降低了粘合剂渗出并防止引线接合污染。
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6.
公开(公告)号:US20160141230A1
公开(公告)日:2016-05-19
申请号:US14677964
申请日:2015-04-02
申请人: Peng Liu , Qingchun He , Ping Wu
发明人: Peng Liu , Qingchun He , Ping Wu
IPC分类号: H01L23/495 , H01L21/48 , H01L21/56 , H01L23/31
CPC分类号: H01L23/49551 , H01L21/4825 , H01L21/4842 , H01L21/565 , H01L23/3121 , H01L23/49541 , H01L23/49548 , H01L24/32 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/92 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/49171 , H01L2224/73265 , H01L2224/92247 , H01L2924/00014 , H01L2924/181 , H01L2924/1815 , H01L2924/00012 , H01L2924/00 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要: A semiconductor device includes a lead frame having a die support area and a plurality of inner and outer row leads surrounding the die support area, and a semiconductor die mounted on the die support area and electrically connected to the leads with bond wires. A molding material encapsulates the semiconductor die, the bond wires, and the leads, and defines a package body. The semiconductor device further includes connection bars extending vertically from the leads to a top surface of the package body. The connection bars connect the inner row leads to respective ones of the outer row leads before the molding process is performed.
摘要翻译: 一种半导体器件包括具有管芯支撑区域的引线框架和围绕模具支撑区域的多个内部和外部引线引线,以及安装在管芯支撑区域上并与引线电连接的引线的半导体管芯。 成型材料封装半导体管芯,接合线和引线,并且限定封装主体。 半导体器件还包括从引线垂直延伸到封装主体的顶表面的连接杆。 在执行模制过程之前,连接杆将内排引线连接到相应的外排引线。
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公开(公告)号:US08969135B2
公开(公告)日:2015-03-03
申请号:US14077174
申请日:2013-11-11
申请人: Peng Liu , Qingchun He , Zhaobin Qi , Liqiang Xu , Tong Zhao
发明人: Peng Liu , Qingchun He , Zhaobin Qi , Liqiang Xu , Tong Zhao
IPC分类号: H01L21/44 , H01L21/48 , H01L21/50 , H01L23/495 , H01L25/00
CPC分类号: H01L23/49575 , H01L23/49503 , H01L23/4952 , H01L24/29 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/73 , H01L25/50 , H01L2224/27013 , H01L2224/29101 , H01L2224/2919 , H01L2224/32245 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/73265 , H01L2224/78313 , H01L2924/0002 , H01L2924/19107 , H01L2924/00 , H01L2924/00014 , H01L2924/00012 , H01L2924/014
摘要: A semiconductor device includes a lead frame having a down bond area, a die attach area and a dam formed between the down bond area and the die attach area. A bottom of the dam is attached on a surface of the lead frame. The dam prevents contamination of the down bond area from die attach material, which may occur during a die attach process.
摘要翻译: 半导体器件包括具有下焊接区域的引线框架,管芯附着区域和形成在下焊接区域和管芯附着区域之间的坝。 大坝的底部附着在引线框架的表面上。 大坝可防止下模接合区域从芯片附着材料中的污染,这可能在芯片附着过程中发生。
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公开(公告)号:US20110165729A1
公开(公告)日:2011-07-07
申请号:US12830424
申请日:2010-07-05
申请人: Peng LIU , Xu Gao , Qingchun He , Zhaobin Qi , Dehong Ye
发明人: Peng LIU , Xu Gao , Qingchun He , Zhaobin Qi , Dehong Ye
CPC分类号: H01L23/3107 , H01L21/4842 , H01L23/49558 , H01L23/49582 , H01L24/29 , H01L24/48 , H01L24/83 , H01L24/85 , H01L24/97 , H01L2224/2919 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , H01L2224/73265 , H01L2224/83 , H01L2224/85 , H01L2224/97 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/14 , H01L2924/15747 , H01L2924/181 , H01L2924/19041 , H01L2924/0665 , H01L2224/45099 , H01L2924/00 , H01L2924/00012
摘要: Quad Flat No-Lead packaged devices are manufactured using two singulation operations with two different saw blades of varying widths with the first singulation operation using a wider saw blade than the second singulation operation. Between singulation operations, the exposed portions of the leads are plated with a solderable metal. By performing the second singulation operation within the first cut made by the first singulation, at least half of the exposed metal of the leads remains plated. Thus, better solder joints may be formed, which allows for simpler visual inspection.
摘要翻译: 使用具有不同宽度的两个不同锯片的两个单独操作制造四边形无铅封装装置,其中使用比第二单分割操作更宽的锯片进行第一次分割操作。 在切割操作之间,引线的暴露部分镀有可焊接的金属。 通过在由第一单片化制成的第一切割内进行第二切割操作,引线的裸露金属的至少一半保持镀覆。 因此,可以形成更好的焊点,这允许更简单的目视检查。
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公开(公告)号:US08643158B2
公开(公告)日:2014-02-04
申请号:US13413652
申请日:2012-03-07
申请人: Peng Liu , Qingchun He , Ping Wu
发明人: Peng Liu , Qingchun He , Ping Wu
IPC分类号: H01L23/495 , H01L21/56
CPC分类号: H01L23/49537 , H01L21/4828 , H01L21/568 , H01L23/3107 , H01L23/49503 , H01L23/49548 , H01L24/45 , H01L24/48 , H01L2224/45124 , H01L2224/45144 , H01L2224/45565 , H01L2224/48091 , H01L2224/48247 , H01L2924/01013 , H01L2924/01028 , H01L2924/181 , H01L2924/00014 , H01L2924/00012
摘要: A semiconductor package is assembled using first and second lead frames. The first lead frame includes a die flag and the second lead frame includes lead fingers. When the first and second lead frames are mated, the lead fingers surround the die flag. Side surfaces of the die flag are partially etched to form an extended die attach surface on the die flag, and portions of the top surface of each of the lead fingers also are partially etched to form lead finger surfaces that are complementary with the etched side surfaces of the die flag. A semiconductor die is attached to the extended die attach surface and bond pads of the semiconductor die are electrically connected to the lead fingers. An encapsulating material covers the die, electrical connections, and top surfaces of the die flag and lead fingers.
摘要翻译: 使用第一和第二引线框组装半导体封装。 第一引线框架包括管芯标记,并且第二引线框架包括引线指。 当第一和第二引线框架配合时,引线指环围绕管芯标记。 模具标记的侧表面被部分蚀刻以在模具标记上形成延伸的芯片附接表面,并且每个引线指的顶表面的部分也被部分地蚀刻以形成与蚀刻的侧表面互补的引线指表面 的旗帜。 半导体管芯附着到延伸管芯附接表面,并且半导体管芯的接合焊盘电连接到引线指。 封装材料覆盖管芯标记和引线指的管芯,电连接和顶表面。
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公开(公告)号:US08080448B1
公开(公告)日:2011-12-20
申请号:US13092170
申请日:2011-04-22
申请人: Ping Wu , Qingchun He , Peng Liu
发明人: Ping Wu , Qingchun He , Peng Liu
IPC分类号: H01L21/00
CPC分类号: H01L23/49537 , H01L23/3107 , H01L23/49541 , H01L23/49558 , H01L24/45 , H01L24/48 , H01L24/97 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48247 , H01L2924/00014 , H01L2924/14 , H01L2924/181 , H01L2924/00 , H01L2924/00012 , H01L2224/45015 , H01L2924/207
摘要: A method of making semiconductor devices includes producing an array of first lead frames having rows of first electrical contact elements on respective sides. Sub-assemblies are produced by applying a first molding compound peripherally to provide support between the first electrical contact elements of each of the first lead frames, and singulating the sub-assemblies. An array of assemblies is produced, each of which includes a second lead frame having rows of second electrical contact elements on respective sides, a respective one of the sub-assemblies disposed in the second lead frame with the rows of first electrical contact elements nested adjacent to and inside the rows of second electrical contact elements, and a semiconductor die mounted on the sub-assembly. The assemblies are encapsulated using a second molding compound with the rows of first and second electrical contact elements exposed on adjacent sides of an active face of the respective assembly.
摘要翻译: 一种制造半导体器件的方法包括制造具有在相应侧面上具有第一电接触元件行的第一引线框阵列。 子组件通过在周边施加第一模塑料以在第一引线框架中的每一个的第一电接触元件之间提供支撑并且分割子组件来制造。 产生一组组件,每个组件包括在相应侧面上具有一列第二电接触元件的第二引线框架,设置在第二引线框架中的相应的一个子组件,第一电接触元件列嵌套在相邻 第二电接触元件的行内和内部,以及安装在子组件上的半导体管芯。 使用第二模制化合物封装组件,其中第一和第二电接触元件排暴露在相应组件的有效面的相邻侧上。
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