公开(公告)号：US5945703A

公开(公告)日：1999-08-31

申请号：US351539

申请日：1994-12-07

申请人： Kazuyoshi Furukawa ,  Masanobu Ogino ,  Koichi Kishi

发明人： Kazuyoshi Furukawa ,  Masanobu Ogino ,  Koichi Kishi

IPC分类号： H01L27/04 ,  H01L21/822 ,  H01L21/8242 ,  H01L27/10 ,  H01L27/108 ,  H01L29/78 ,  H01L29/786 ,  H01L29/76 ,  H01L29/94 ,  H01L31/119

CPC分类号： H01L27/10861 ,  H01L27/10832

摘要： In a semiconductor memory device, a capacitor with a trench having a laterally expanded bottom part is provided, the area above the laterally expanded part being provided for a transistor and cell separation, this resulting in an increase in the degree of integration. This laterally expanded part is formed by etching a silicon oxide film which is sandwiched between a substrate and a silicon layer, and is obtained by forming a depression in a semiconductor substrate beforehand. A silicon layer or another semiconductor substrate is laminated by bonding to a semiconductor substrate such as this into which is formed a depression, a trench which extends to this depression being formed, and the required films being formed to obtain the desired trench capacitor. By forming an oxide film on all of or the depression part of the semiconductor substrate into which is formed the depression, it is possible to eliminate the influence of radiation, by improving insulation properties.

摘要翻译： 在半导体存储器件中，提供具有横向膨胀的底部的沟槽的电容器，横向扩展部分上方的区域被提供用于晶体管和电池分离，这导致集成度的增加。 该横向膨胀部通过蚀刻被夹在基板和硅层之间的氧化硅膜形成，并且通过预先在半导体基板中形成凹陷而获得。 通过结合到形成凹陷的半导体衬底，延伸到形成该凹陷的沟槽和形成所需的膜以获得所需的沟槽电容器来层叠硅层或另一半导体衬底。 通过在形成有凹陷的半导体衬底的全部或凹陷部上形成氧化膜，可以通过提高绝缘性而消除辐射的影响。

公开(公告)号：US09147798B2

公开(公告)日：2015-09-29

申请号：US13421402

申请日：2012-03-15

申请人： Yasuhiko Akaike ,  Yoshinori Natsume ,  Shinji Nunotani ,  Kazuyoshi Furukawa

发明人： Yasuhiko Akaike ,  Yoshinori Natsume ,  Shinji Nunotani ,  Kazuyoshi Furukawa

IPC分类号： H01L33/38 ,  H01L33/00 ,  H01L33/40

CPC分类号： H01L33/0079 ,  H01L33/005 ,  H01L33/38 ,  H01L33/40 ,  H01L33/405 ,  H01L2933/0016 ,  H01L2933/0025

摘要： According to one embodiment, a semiconductor light emitting element includes a light emitting element includes a semiconductor stacked body including a light emitting layer, a reflection layer, a support substrate, a first bonding electrode and a second bonding electrode. The reflection layer is made of a metal and has a first surface and a second surface opposite to the first surface. The semiconductor stacked body is provided on a side of the first surface of the reflection layer. The first bonding electrode is provided between the second surface and the support substrate and includes a convex portion projected toward the support substrate and a bottom portion provided around the convex portion in plan view. The second bonding electrode includes a concave portion fitted in the convex portion of the first bonding electrode and is capable of bonding the support substrate and the first bonding electrode.

摘要翻译： 根据一个实施例，半导体发光元件包括发光元件，其包括包括发光层，反射层，支撑衬底，第一接合电极和第二接合电极的半导体层叠体。 反射层由金属制成，具有与第一表面相对的第一表面和第二表面。 半导体层叠体设置在反射层的第一表面的一侧。 第一接合电极设置在第二表面和支撑基板之间，并且包括朝向支撑基板突出的凸部和在俯视图中设置在凸部周围的底部。 第二接合电极包括嵌合在第一接合电极的凸部中并能够接合支撑基板和第一接合电极的凹部。

公开(公告)号：US20090045425A1

公开(公告)日：2009-02-19

申请号：US12191659

申请日：2008-08-14

申请人： Hidefumi YASUDA ,  Yuko Kato ,  Yasuharu Sugawara ,  Toshiyuki Terada ,  Kazuyoshi Furukawa

发明人： Hidefumi YASUDA ,  Yuko Kato ,  Yasuharu Sugawara ,  Toshiyuki Terada ,  Kazuyoshi Furukawa

IPC分类号： H01L33/00 ,  H01L21/00

CPC分类号： H01L33/60 ,  H01L33/0079 ,  H01L33/387 ,  H01L33/405 ,  H01L33/46

摘要： A semiconductor light emitting device includes: a support substrate; a metal layer provided on the support substrate; a semiconductor layer provided on the metal layer and including a light emitting layer; a contact layer containing a semiconductor, selectively provided between the semiconductor layer and the metal layer, and being in contact with the semiconductor layer and the metal layer; and an insulating film provided between the semiconductor layer and the metal layer at a position not overlapping the contact layer.

摘要翻译： 一种半导体发光器件包括：支撑衬底; 设置在所述支撑基板上的金属层; 设置在所述金属层上并包括发光层的半导体层; 包含半导体的接触层，选择性地设置在所述半导体层和所述金属层之间，并与所述半导体层和所述金属层接触; 以及在不与接触层重叠的位置处在半导体层和金属层之间设置的绝缘膜。

公开(公告)号：US06528823B2

公开(公告)日：2003-03-04

申请号：US09961177

申请日：2001-09-24

申请人： Yasuhiko Akaike ,  Kazuyoshi Furukawa

发明人： Yasuhiko Akaike ,  Kazuyoshi Furukawa

IPC分类号： H01L2906

CPC分类号： H01L33/305

摘要： A semiconductor light-emitting element, including a double hetero structure formed of III-V group compound semiconductor layers including an active layer acting as a light emitting layer and an n-type cladding layer and a p-type cladding layer having the active layer sandwiched therebetween, a p-type layer laminated on the double hetero structure and containing a concentration of Zn as a dopant, and a Zn diffusion preventing layer interposed between the active layer of the double hetero structure and the p-type layer having a high Zn concentration.

摘要翻译： 一种半导体发光元件，包括由作为发光层的有源层和n型包覆层的III-V族化合物半导体层形成的双异质结构体和具有夹层的活性层的p型覆层 其间层压在双异质结构上并含有Zn作为掺杂剂的浓度的p型层，以及介于双异质结构的有源层和具有高Zn浓度的p型层之间的Zn扩散防止层 。

公开(公告)号：US5332920A

公开(公告)日：1994-07-26

申请号：US850964

申请日：1992-03-11

申请人： Akio Nakagawa ,  Kazuyoshi Furukawa ,  Tsuneo Ogura ,  Katsujiro Tanzawa

发明人： Akio Nakagawa ,  Kazuyoshi Furukawa ,  Tsuneo Ogura ,  Katsujiro Tanzawa

IPC分类号： H01L21/761 ,  H01L21/762 ,  H01L21/763 ,  H01L27/088 ,  H01L27/12 ,  H01L29/739 ,  H01L29/70

CPC分类号： H01L21/76264 ,  H01L21/761 ,  H01L21/76297 ,  H01L21/763 ,  H01L27/088 ,  H01L27/1203 ,  H01L29/7394 ,  H01L21/76275 ,  H01L21/76283 ,  H01L21/76286 ,  H01L2924/10158

摘要： A dielectric isolation substrate comprises a first semiconductor wafer, a second semiconductor wafer bonded on the first semiconductor wafer with a first insulating layer interposed therebetween, a semiconductor layer formed on the second semiconductor wafer, a first groove formed in the semiconductor layer and the second semiconductor wafer so as to reach the first insulating layer, thereby isolating the semiconductor layer and the second semiconductor wafer, and a second insulating layer formed on the side face of the first groove or embedded in the first groove. In this dielectric isolation substrate, a high breakdown voltage element and a low breakdown voltage element are formed in a region isolated by the first groove.

摘要翻译： 绝缘隔离衬底包括：第一半导体晶片;第二半导体晶片，其在第一半导体晶片上具有第一绝缘层，第二绝缘层插入在第二半导体晶片之间，形成在第二半导体晶片上的半导体层，形成在半导体层中的第一沟槽和第二半导体层 晶片，以便到达第一绝缘层，从而隔离半导体层和第二半导体晶片，以及形成在第一凹槽的侧面上或嵌入在第一凹槽中的第二绝缘层。 在该绝缘隔离衬底中，在由第一沟槽隔离的区域中形成高击穿电压元件和低击穿电压元件。

公开(公告)号：US09318664B2

公开(公告)日：2016-04-19

申请号：US13616580

申请日：2012-09-14

申请人： Shinji Nunotani ,  Yasuhiko Akaike ,  Yoshinori Natsume ,  Kazuyoshi Furukawa

发明人： Shinji Nunotani ,  Yasuhiko Akaike ,  Yoshinori Natsume ,  Kazuyoshi Furukawa

IPC分类号： H01L33/44 ,  H01L33/60 ,  H01L33/00 ,  H01L33/40

CPC分类号： H01L33/44 ,  H01L33/0079 ,  H01L33/405 ,  H01L33/60

摘要： According to one embodiment, a semiconductor light emitting element includes: a support substrate; a bonding layer provided on the support substrate; an LED layer provided on the bonding layer; and a buffer layer softer than the bonding layer. The buffer layer is placed in one of between the support substrate and the bonding layer and between the bonding layer and the LED layer.

摘要翻译： 根据一个实施例，半导体发光元件包括：支撑基板; 设置在所述支撑基板上的接合层; 设置在所述接合层上的LED层; 和比结合层柔软的缓冲层。 缓冲层被放置在支撑衬底和结合层之间以及结合层和LED层之间的一个中。

公开(公告)号：US08829488B2

公开(公告)日：2014-09-09

申请号：US13595284

申请日：2012-08-27

申请人： Kazuyoshi Furukawa ,  Yasuhiko Akaike ,  Shunji Yoshitake

发明人： Kazuyoshi Furukawa ,  Yasuhiko Akaike ,  Shunji Yoshitake

IPC分类号： H01L23/06 ,  H01L33/10 ,  H01L33/00 ,  H01L33/16 ,  H01L21/18 ,  H01L33/20

CPC分类号： H01L33/0079 ,  H01L21/187 ,  H01L24/05 ,  H01L33/10 ,  H01L33/16 ,  H01L33/20 ,  H01L2224/04042 ,  H01L2224/48463 ,  H01L2924/12041 ,  H01L2924/351 ,  H01L2924/00

摘要： Provided is a laminate containing a first compound semiconductor layer; and a second compound semiconductor layer integrally bonded to the first compound semiconductor layer via a bonding layer. A plane A is in the second compound semiconductor layer bonded to a surface where a plane B is in the first compound semiconductor layer, or a surface where a plane B is in the second compound semiconductor layer bonded to a surface where a plane A in the first compound semiconductor layer. The impurity concentration of the bonding layer is 2×1018 cm3 or more.

摘要翻译： 提供含有第一化合物半导体层的层压体; 以及经由接合层与第一化合物半导体层一体接合的第二化合物半导体层。 平面A在与第一化合物半导体层中的平面B的表面接合的第二化合物半导体层中，或者第二化合物半导体层中的平面B与表面中的平面A接合的表面 第一化合物半导体层。 接合层的杂质浓度为2×1018cm3以上。

公开(公告)号：US08707057B2

公开(公告)日：2014-04-22

申请号：US13237317

申请日：2011-09-20

申请人： Kazuyoshi Furukawa ,  Takeshi Shimoyama ,  Masahiko Takenaka

发明人： Kazuyoshi Furukawa ,  Takeshi Shimoyama ,  Masahiko Takenaka

IPC分类号： G06F11/30 ,  G06F12/14

CPC分类号： H04L9/002 ,  H04L9/06 ,  H04L2209/12

摘要： A data processing apparatus includes an address bus, a scramble unit, and a data bus. The address bus outputs address data to be given to a memory apparatus. The scramble unit scrambles write-in data into a storage position in the memory apparatus identified by the address data to obtain confidential data. The data bus outputs the confidential data. The scramble unit includes a first scrambler, a first converter and a second scrambler. The first scrambler XORs first mask data corresponding to the address data and the write-in data for each bit and makes it first scrambled data. The first converter performs one-to-one substitution conversion of the first scrambled data. The second scrambler XORs second mask data corresponding to the address data and data after the conversion of the first scrambled data by the first converter and outputs obtained second scrambled data as the confidential data.

摘要翻译： 数据处理装置包括地址总线，加扰单元和数据总线。 地址总线输出要提供给存储装置的地址数据。 加扰单元将写入数据加密到由地址数据识别的存储装置中的存储位置，以获得机密数据。 数据总线输出机密数据。 加扰单元包括第一加扰器，第一转换器和第二加扰器。 第一加扰器将对应于地址数据的第一掩码数据和每个位的写入数据进行异或，并使其成为第一个加扰数据。 第一转换器执行第一加扰数据的一对一替换转换。 第二加扰器将对应于地址数据的第二掩码数据和由第一转换器转换第一加扰数据之后的数据进行异或，并将获得的第二加密数据作为机密数据输出。

公开(公告)号：US08327156B2

公开(公告)日：2012-12-04

申请号：US12560222

申请日：2009-09-15

申请人： Kazuyoshi Furukawa ,  Kouichi Itoh ,  Masahiko Takenaka

发明人： Kazuyoshi Furukawa ,  Kouichi Itoh ,  Masahiko Takenaka

IPC分类号： G06F21/00

CPC分类号： G06F7/723 ,  G06F7/728 ,  G06F2207/7271 ,  H04L9/004 ,  H04L9/302 ,  H04L9/3066

摘要： A cryptographic processing device, comprising: a storage unit; initial setting unit for setting a value to be stored in the storage unit; Montgomery modular multiplication operation unit for performing a Montgomery modular multiplication operation plural times for a value set by the initial setting unit; and fault attack detection unit for determining whether or not a fault attack occurred for each of at least some parts of the Montgomery modular multiplication operations performed plural times.

摘要翻译： 一种加密处理装置，包括：存储单元; 初始设定单元，用于设定存储在存储单元中的值; 蒙哥马利乘法运算单元，用于对由初始设定单元设定的值进行多次蒙哥马利乘法运算; 以及故障攻击检测单元，用于确定多次执行的蒙哥马利乘法运算的至少一些部分中是否发生故障攻击。

公开(公告)号：US08142937B2

公开(公告)日：2012-03-27

申请号：US12121879

申请日：2008-05-16

申请人： Kazuyoshi Furukawa

发明人： Kazuyoshi Furukawa

IPC分类号： H01M8/02

CPC分类号： H01M16/006 ,  H01M8/0263 ,  H01M8/04007 ,  H01M8/04223 ,  H01M8/04225 ,  H01M8/04328 ,  H01M8/04447 ,  H01M8/04552 ,  H01M8/04559 ,  H01M8/04686 ,  H01M8/04753 ,  H01M8/04955 ,  H01M8/1011 ,  H01M8/2483 ,  H01M2250/20 ,  Y02E60/523 ,  Y02T90/32

摘要： A fuel cell system is capable of easily determining whether or not supply of gas to a cathode has been cut off after an issuance of a power generation stop command. The fuel cell system includes a cell stack which includes a plurality of fuel cells; a stop valve which is brought to a closed state as the power generation stop command is issued, thereby cutting off an inflow of air into a pipe, and therefore into the cell stack; a power generation sensor which detects a voltage of the cell stack after the issuance of the power generation stop command; and a CPU which controls an operation of the fuel cell system. When a main switch is turned off while the cell stack is in a power generating operation, an operation stop command and the power generation stop command are given to the CPU. After the power generation stop command is issued, the CPU determines whether or not air supply to the cell stack has been cut off, by comparing the voltage of the cell stack to a first threshold value.

摘要翻译： 燃料电池系统能够容易地确定在发电停止命令之后是否已经切断向阴极供应气体。 燃料电池系统包括包括多个燃料电池的电池堆; 作为发电停止指令而进入关闭状态的截止阀，从而切断空气流入管内，进而进入电池堆; 发电发生传感器，其在发电停止命令之后检测电池组的电压; 以及控制燃料电池系统的运转的CPU。 当电池堆处于发电操作中，当主开关断开时，向CPU提供操作停止命令和发电停止命令。 在发出发电停止命令之后，CPU通过将电池堆的电压与第一阈值进行比较来确定是否已经切断了对电池堆的供气。