公开(公告)号：US20250056937A1

公开(公告)日：2025-02-13

申请号：US18929239

申请日：2024-10-28

Applicant: Micron Technology, Inc.

Inventor： Vladimir Odnoblyudov ,  Scott D. Schellhammer ,  Jeremy S. Frei

IPC: H01L33/52 ,  H01L21/56 ,  H01L21/683 ,  H01L21/78 ,  H01L23/00 ,  H01L23/31 ,  H01L33/00 ,  H01L33/20 ,  H01L33/44 ,  H01L33/62 ,  H01S5/02 ,  H10K50/84 ,  H10K50/844 ,  H10K71/00

Abstract: Etched trenches in a bond material for die singulation, and associated systems and methods are disclosed. A method for solid state transducer device singulation in accordance with one embodiment includes forming a plurality of trenches by etching through a metallic bond material forming a bond between a carrier substrate and a plurality of the dies and singulating the carrier substrate along the trenches to separate the dies. In particular embodiments, the trenches extend into the carrier substrate. In further particular embodiments, the dies are at least partially encapsulated in a dielectric material.

公开(公告)号：US12132155B2

公开(公告)日：2024-10-29

申请号：US17145752

申请日：2021-01-11

Applicant: Micron Technology, Inc.

Inventor： Vladimir Odnoblyudov ,  Scott D. Schellhammer ,  Jeremy S. Frei

IPC: H01L33/52 ,  H01L21/56 ,  H01L21/683 ,  H01L21/78 ,  H01L23/00 ,  H01L23/31 ,  H01L33/00 ,  H01L33/20 ,  H01L33/44 ,  H01L33/62 ,  H01S5/02 ,  H10K50/84 ,  H10K50/844 ,  H10K71/00

CPC classification number: H01L33/52 ,  H01L21/561 ,  H01L21/78 ,  H01L23/3185 ,  H01L33/0095 ,  H01L33/20 ,  H01L33/44 ,  H01L33/62 ,  H01S5/0201 ,  H01L21/6836 ,  H01L24/11 ,  H01L24/13 ,  H01L24/97 ,  H01L2221/68327 ,  H01L2221/68377 ,  H01L2224/1146 ,  H01L2224/13022 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/97 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2933/005 ,  H01L2933/0066 ,  H10K50/84 ,  H10K50/844 ,  H10K71/00 ,  H10K71/851 ,  Y02P80/30 ,  H01L2224/97 ,  H01L2224/11 ,  H01L2224/1146 ,  H01L2924/00014 ,  H01L2224/13124 ,  H01L2924/00014 ,  H01L2224/13147 ,  H01L2924/00014 ,  H01L2224/13144 ,  H01L2924/00014 ,  H01L2224/13139 ,  H01L2924/00014 ,  H01L2924/12041 ,  H01L2924/00 ,  H01L2924/12042 ,  H01L2924/00 ,  H01L2924/12044 ,  H01L2924/00

Abstract: Etched trenches in a bond material for die singulation, and associated systems and methods are disclosed. A method for solid state transducer device singulation in accordance with one embodiment includes forming a plurality of trenches by etching through a metallic bond material forming a bond between a carrier substrate and a plurality of the dies and singulating the carrier substrate along the trenches to separate the dies. In particular embodiments, the trenches extend into the carrier substrate. In further particular embodiments, the dies are at least partially encapsulated in a dielectric material.

公开(公告)号：US20240030374A1

公开(公告)日：2024-01-25

申请号：US18473605

申请日：2023-09-25

Applicant: Micron Technology, Inc.

Inventor： Scott D. Schellhammer

IPC: H01L33/02 ,  H01L33/24 ,  H01L33/00 ,  H01L33/06

CPC classification number: H01L33/025 ,  H01L33/24 ,  H01L33/0095 ,  H01L33/06 ,  H01L33/32

Abstract: Semiconductor lighting devices and associated methods of manufacturing are disclosed herein. In one embodiment, a semiconductor lighting device includes a first semiconductor material, a second semiconductor material spaced apart from the first semiconductor material, and an active region between the first and second semiconductor materials. The semiconductor lighting device also includes an indentation extending from the second semiconductor material toward the active region and the first semiconductor material and an insulating material in the indentation of the solid state lighting structure.

公开(公告)号：US10084114B2

公开(公告)日：2018-09-25

申请号：US15149740

申请日：2016-05-09

Applicant: Micron Technology, Inc.

Inventor： Lifang Xu ,  Scott D. Schellhammer ,  Shan Ming Mou ,  Michael J. Bernhardt

IPC: H01L51/52 ,  H01L33/38 ,  H01L31/0216 ,  H01L31/0236 ,  H01L33/22 ,  H01L33/42 ,  H01L33/58

CPC classification number: H01L33/38 ,  H01L31/02168 ,  H01L31/0236 ,  H01L33/22 ,  H01L33/42 ,  H01L33/58 ,  H01L2933/0091 ,  Y02E10/50

Abstract: Textured optoelectronic devices and associated methods of manufacture are disclosed herein. In several embodiments, a method of manufacturing a solid state optoelectronic device can include forming a conductive transparent texturing material on a substrate. The method can further include forming a transparent conductive material on the texturing material. Upon heating the device, the texturing material causes the conductive material to grow a plurality of protuberances. The protuberances can improve current spreading and light extraction from the device.

公开(公告)号：US09812606B2

公开(公告)日：2017-11-07

申请号：US14706827

申请日：2015-05-07

Applicant: Micron Technology, Inc.

Inventor： Martin F. Schubert ,  Vladimir Odnoblyudov ,  Scott D. Schellhammer

IPC: H01L33/00 ,  H01L31/02 ,  H01L31/0236 ,  H01L31/0352 ,  H01L25/16 ,  H01L25/075 ,  H01L33/06 ,  H01L33/22 ,  H01L33/32 ,  H01L33/48 ,  H01L33/62 ,  H01L27/146

CPC classification number: H01L33/0025 ,  H01L25/0753 ,  H01L25/167 ,  H01L27/14687 ,  H01L31/02 ,  H01L31/0236 ,  H01L31/035209 ,  H01L33/0079 ,  H01L33/06 ,  H01L33/22 ,  H01L33/32 ,  H01L33/486 ,  H01L33/62 ,  H01L2924/0002 ,  Y02E10/50 ,  H01L2924/00

Abstract: Semiconductor device assemblies having solid-state transducer (SST) devices and associated semiconductor devices, systems, and are disclosed herein. In one embodiment, a method of forming a semiconductor device assembly includes forming a support substrate, a transfer structure, and a plurality semiconductor structures between the support substrate and the transfer structure. The method further includes removing the support substrate to expose an active surface of the individual semiconductor structures and a trench between the individual semiconductor structures. The semiconductor structures can be attached to a carrier substrate that is optically transmissive such that the active surface can emit and/or receive the light through the carrier substrate. The individual semiconductor structures can then be processed on the carrier substrate with the support substrate removed. In some embodiments, the individual semiconductor structures are simulated from the semiconductor device assembly and include a section of the carrier substrate attached to each of the individual semiconductor structures.

公开(公告)号：US20220131031A1

公开(公告)日：2022-04-28

申请号：US17568877

申请日：2022-01-05

Applicant: Micron Technology, Inc.

Inventor： Scott D. Schellhammer

IPC: H01L33/02 ,  H01L33/00 ,  H01L33/24 ,  H01L33/06

Abstract: Semiconductor lighting devices and associated methods of manufacturing are disclosed herein. In one embodiment, a semiconductor lighting device includes a first semiconductor material, a second semiconductor material spaced apart from the first semiconductor material, and an active region between the first and second semiconductor materials. The semiconductor lighting device also includes an indentation extending from the second semiconductor material toward the active region and the first semiconductor material and an insulating material in the indentation of the solid state lighting structure.

公开(公告)号：US20210135067A1

公开(公告)日：2021-05-06

申请号：US17145752

申请日：2021-01-11

Applicant: Micron Technology, Inc.

Inventor： Vladimir Odnoblyudov ,  Scott D. Schellhammer ,  Jeremy S. Frei

IPC: H01L33/52 ,  H01L33/44 ,  H01L21/78 ,  H01L23/31 ,  H01L21/56 ,  H01L33/00 ,  H01L33/20 ,  H01L33/62 ,  H01S5/02

Abstract: Etched trenches in a bond material for die singulation, and associated systems and methods are disclosed. A method for solid state transducer device singulation in accordance with one embodiment includes forming a plurality of trenches by etching through a metallic bond material forming a bond between a carrier substrate and a plurality of the dies and singulating the carrier substrate along the trenches to separate the dies. In particular embodiments, the trenches extend into the carrier substrate. In further particular embodiments, the dies are at least partially encapsulated in a dielectric material.

公开(公告)号：US10892384B2

公开(公告)日：2021-01-12

申请号：US16008836

申请日：2018-06-14

Applicant: Micron Technology, Inc.

Inventor： Vladimir Odnoblyudov ,  Scott D. Schellhammer ,  Jeremy S. Frei

IPC: H01L33/52 ,  H01L33/44 ,  H01L21/78 ,  H01L23/31 ,  H01L21/56 ,  H01L33/62 ,  H01L33/00 ,  H01L33/20 ,  H01S5/02 ,  H01L23/00 ,  H01L21/683 ,  H01L51/52 ,  H01L51/56

Abstract: Etched trenches in a bond material for die singulation, and associated systems and methods are disclosed. A method for solid state transducer device singulation in accordance with one embodiment includes forming a plurality of trenches by etching through a metallic bond material forming a bond between a carrier substrate and a plurality of the dies and singulating the carrier substrate along the trenches to separate the dies. In particular embodiments, the trenches extend into the carrier substrate. In further particular embodiments, the dies are at least partially, encapsulated in a dielectric material.

公开(公告)号：US20190189597A1

公开(公告)日：2019-06-20

申请号：US16273579

申请日：2019-02-12

Applicant: Micron Technology, Inc.

Inventor： Scott D. Schellhammer ,  Vladimir Odnoblyudov ,  Jeremy S. Frei

IPC: H01L25/075 ,  H01L23/00 ,  H01L33/48 ,  H01L33/00 ,  H01L21/18 ,  H01L21/20 ,  H01L23/495 ,  H01L33/62 ,  H01L21/447

CPC classification number: H01L25/0753 ,  H01L21/187 ,  H01L21/2007 ,  H01L21/447 ,  H01L23/49513 ,  H01L24/04 ,  H01L24/06 ,  H01L24/32 ,  H01L24/83 ,  H01L24/94 ,  H01L24/97 ,  H01L33/0066 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/486 ,  H01L33/62 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/83001 ,  H01L2224/83005 ,  H01L2224/83121 ,  H01L2224/8314 ,  H01L2224/83193 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/00

Abstract: Discontinuous bonds for semiconductor devices are disclosed herein. A device in accordance with a particular embodiment includes a first substrate and a second substrate, with at least one of the first substrate and the second substrate having a plurality of solid-state transducers. The second substrate can include a plurality of projections and a plurality of intermediate regions and can be bonded to the first substrate with a discontinuous bond. Individual solid-state transducers can be disposed at least partially within corresponding intermediate regions and the discontinuous bond can include bonding material bonding the individual solid-state transducers to blind ends of corresponding intermediate regions. Associated methods and systems of discontinuous bonds for semiconductor devices are disclosed herein.

公开(公告)号：US10326043B2

公开(公告)日：2019-06-18

申请号：US15729487

申请日：2017-10-10

Applicant: Micron Technology, Inc.

Inventor： Martin F. Schubert ,  Vladimir Odnoblyudov ,  Scott D. Schellhammer

IPC: H01L33/00 ,  H01L31/02 ,  H01L31/0236 ,  H01L31/0352 ,  H01L25/16 ,  H01L25/075 ,  H01L33/06 ,  H01L33/22 ,  H01L33/32 ,  H01L33/48 ,  H01L33/62 ,  H01L27/146

Abstract: Semiconductor device assemblies having solid-state transducer (SST) devices and associated semiconductor devices, systems, and are disclosed herein. In one embodiment, a method of forming a semiconductor device assembly includes forming a support substrate, a transfer structure, and a plurality semiconductor structures between the support substrate and the transfer structure. The method further includes removing the support substrate to expose an active surface of the individual semiconductor structures and a trench between the individual semiconductor structures. The semiconductor structures can be attached to a carrier substrate that is optically transmissive such that the active surface can emit and/or receive the light through the carrier substrate. The individual semiconductor structures can then be processed on the carrier substrate with the support substrate removed. In some embodiments, the individual semiconductor structures are singulated from the semiconductor device assembly and include a section of the carrier substrate attached to each of the individual semiconductor structures.