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    Optoelectronic semiconductor chip and method of producing an optoelectronic semiconductor chip
    1.
    发明授权
    Optoelectronic semiconductor chip and method of producing an optoelectronic semiconductor chip 有权
    光电半导体芯片及其制造方法

    公开(公告)号：US08536603B2

    公开(公告)日：2013-09-17

    申请号：US13123779

    申请日：2009-10-12

    申请人： Stefan Illek ,  Uwe Strauss

    发明人： Stefan Illek ,  Uwe Strauss

    IPC分类号： H01L33/00

    CPC分类号： H01S5/12 ,  H01L33/14 ,  H01L2924/0002 ,  H01S5/0421 ,  H01S5/06256 ,  H01S5/1228 ,  H01S5/1231 ,  H01S5/209 ,  H01L2924/00

    摘要： An optoelectronic semiconductor chip having a semiconductor layer sequence with a plurality of layers arranged over one another includes an active layer with an active region which emits electromagnetic radiation in an emission direction when in operation, a first grating layer on the active layer which, in an emission direction, has a plurality of stripes in the form of grating lines extending perpendicularly to the emission direction with spaces arranged therebetween, and a second grating layer on the first grating layer which covers the stripes of the first grating layer and the spaces and which comprises a transparent material applied by non-epitaxial application.

    摘要翻译： 具有彼此排列的多个层的半导体层序列的光电子半导体芯片包括：有源层，具有在工作时发射方向上发射电磁辐射的有源区;活性层上的第一光栅层， 发射方向具有垂直于发射方向延伸的格栅线的形式的多个条纹，并且其间具有间隔布置的第一光栅层和覆盖第一光栅层和空间的条纹的第二光栅层，并且包括 通过非外延应用施加的透明材料。

    OPTOELECTRONIC SEMICONDUCTOR CHIP AND METHOD OF PRODUCING AN OPTOELECTRONIC SEMICONDUCTOR CHIP
    2.
    发明申请
    OPTOELECTRONIC SEMICONDUCTOR CHIP AND METHOD OF PRODUCING AN OPTOELECTRONIC SEMICONDUCTOR CHIP 有权
    光电子半导体芯片和生产光电半导体芯片的方法

    公开(公告)号：US20110235664A1

    公开(公告)日：2011-09-29

    申请号：US13123779

    申请日：2009-10-12

    申请人： Stefan Illek ,  Uwe Strauss

    发明人： Stefan Illek ,  Uwe Strauss

    IPC分类号： H01S5/20 ,  H01L33/58

    CPC分类号： H01S5/12 ,  H01L33/14 ,  H01L2924/0002 ,  H01S5/0421 ,  H01S5/06256 ,  H01S5/1228 ,  H01S5/1231 ,  H01S5/209 ,  H01L2924/00

    摘要： An optoelectronic semiconductor chip having a semiconductor layer sequence with a plurality of layers arranged over one another includes an active layer with an active region which emits electromagnetic radiation in an emission direction when in operation, a first grating layer on the active layer which, in an emission direction, has a plurality of stripes in the form of grating lines extending perpendicularly to the emission direction with spaces arranged therebetween, and a second grating layer on the first grating layer which covers the stripes of the first grating layer and the spaces and which comprises a transparent material applied by non-epitaxial application.

    摘要翻译： 具有彼此排列的多个层的半导体层序列的光电子半导体芯片包括：有源层，具有在工作时发射方向上发射电磁辐射的有源区;活性层上的第一光栅层， 发射方向具有垂直于发射方向延伸的格栅线的形式的多个条纹，并且其间具有间隔布置的第一光栅层和覆盖第一光栅层和空间的条纹的第二光栅层，并且包括 通过非外延应用施加的透明材料。

    Optoelectronic component
    3.
    发明授权
    Optoelectronic component 有权
    光电元件

    公开(公告)号：US08811448B2

    公开(公告)日：2014-08-19

    申请号：US13120752

    申请日：2009-08-31

    申请人： Stefan Illek

    发明人： Stefan Illek

    IPC分类号： H01S3/091 ,  H01S5/04 ,  H01S5/183 ,  H01S5/14 ,  H01S5/18 ,  H01S5/00 ,  H01S5/02 ,  H01S5/40 ,  H01S5/022

    CPC分类号： H01S5/183 ,  H01L2224/48463 ,  H01S5/0071 ,  H01S5/0215 ,  H01S5/0217 ,  H01S5/02272 ,  H01S5/041 ,  H01S5/14 ,  H01S5/18 ,  H01S5/4031

    摘要： An optoelectronic component includes an optical pump device including a first radiation-generating layer and a first radiation exit area at a top side of the pump device, wherein electromagnetic radiation generated during operation of the pump device is coupled out from the pump device through the first radiation exit area transversely and at least in part non-perpendicularly with respect to the first radiation-generating layer, and a surface emitting semiconductor laser chip including a reflective layer sequence including a Bragg mirror, and a second radiation-generating layer, wherein the surface emitting semiconductor laser chip is fixed to the top side of the pump device, and the reflective layer sequence is arranged between the first radiation exit area and the second radiation-generating layer.

    摘要翻译： 光电子部件包括光泵装置，其包括位于泵装置顶侧的第一辐射产生层和第一辐射出口区域，其中在泵装置操作期间产生的电磁辐射通过第一 横向且至少部分地相对于第一辐射产生层非垂直的辐射出射面以及包括布拉格反射镜和第二辐射产生层的反射层序列的表面发射半导体激光器芯片，其中表面 发射半导体激光器芯片固定在泵装置的顶侧，并且反射层序列被布置在第一辐射出射区域和第二辐射产生层之间。

    Method for producing a semiconductor laser, and semiconductor laser
    6.
    发明授权
    Method for producing a semiconductor laser, and semiconductor laser 有权
    半导体激光器的制造方法以及半导体激光器

    公开(公告)号：US07995633B2

    公开(公告)日：2011-08-09

    申请号：US12371292

    申请日：2009-02-13

    申请人： Juergen Dachs ,  Stefan Illek ,  Roland Schulz ,  Thomas Schwarz ,  Frank Singer ,  Heiko Unold

    发明人： Juergen Dachs ,  Stefan Illek ,  Roland Schulz ,  Thomas Schwarz ,  Frank Singer ,  Heiko Unold

    IPC分类号： H01S5/00 ,  H01L21/00

    CPC分类号： H01S5/0201

    摘要： A method for producing a multiplicity of semiconductor lasers (100) comprising the steps of providing a carrier wafer (30), producing an assembly (70) by applying a multiplicity of semiconductor laser chips (4) to a top side (31) of the carrier wafer (30), and singulating the assembly (70) to form a multiplicity of semiconductor lasers (100). Each semiconductor laser (100) comprises a mounting block (3) and at least one semiconductor laser chip (4). Each mounting block (3) has a mounting area (13) which runs substantially perpendicular to a top side (12) of the mounting block (3), on which top side the semiconductor laser chip (4) is arranged. The mounting area (13) is produced during the singulation of the assembly.

    摘要翻译： 一种用于制造多个半导体激光器（100）的方法，包括以下步骤：提供载体晶片（30），通过将多个半导体激光器芯片（4）施加到所述多个半导体激光器的顶侧（31）来产生组件（70） 载体晶片（30），并且分割组件（70）以形成多个半导体激光器（100）。 每个半导体激光器（100）包括安装块（3）和至少一个半导体激光器芯片（4）。 每个安装块（3）具有基本上垂直于安装块（3）的顶侧（12）延伸的安装区域（13），其上布置有半导体激光器芯片（4）的顶侧。 安装区域（13）在组件的分割过程中产生。

    Tunable semiconductor laser on a semi-insulating substrate
    9.
    发明授权
    Tunable semiconductor laser on a semi-insulating substrate 失效
    可半导体半导体激光器在半绝缘基板上

    公开(公告)号：US5260960A

    公开(公告)日：1993-11-09

    申请号：US872401

    申请日：1992-04-23

    申请人： Markus-Christian Amann ,  Stefan Illek ,  Wolfgang Thulke

    发明人： Markus-Christian Amann ,  Stefan Illek ,  Wolfgang Thulke

    IPC分类号： H01S5/00 ,  H01S5/02 ,  H01S5/026 ,  H01S5/06 ,  H01S5/062 ,  H01S5/227 ,  H01S3/19

    CPC分类号： H01S5/06206 ,  H01S5/227 ,  H01S5/0208 ,  H01S5/2275

    摘要： A tunable laser diode on a semi-insulating substrate having a stripe-shaped layer structure has an intermediate layer between an active layer and a tuning layer that is grown-over by an confinement layer that is doped for the same conductivity type as the intermediate layer. An oppositely doped, lateral region is electrically connected via an identically doped lower region to the active layer. An upper region is likewise oppositely doped and is electrically connected to the tuning layer. A contact layer is essentially planarly applied on the surface of the confinement layer and has respective portions on the appertaining regions on which the contacts provided with adequate bond areas are applied with a further contact layer for the common contact.

    摘要翻译： 具有条形层结构的半绝缘衬底上的可调谐激光二极管在有源层和调谐层之间具有中间层，该中间层由掺杂与中间层相同的导电类型的约束层生长 。 相对掺杂的横向区域经由相同掺杂的下部区域电连接到有源层。 上部区域同样相反地掺杂并且电连接到调谐层。 接触层基本上平面地施加在限制层的表面上，并且在其上具有足够粘合区域的触点上的相应部分被施加有用于共同接触的另外的接触层。