摘要:
The invention is embodied in a method of cleaning a plasma reactor by creating a vacuum in the chamber while introducing an etchant gas into the chamber through the gas injection ports, and applying RF energy to a ceiling electrode in the chamber while not necessarily applying RF energy to the coil antenna, so as to strike a predominantly capacitively coupled plasma in the vacuum chamber. In another embodiment the method includes, whenever the reactor is to be operated in an inductive coupling mode, applying RF power to the reactors coil antenna while grounding the ceiling electrode, and whenever the reactor is to be operated in a capacitive coupling mode, applying RF power to the ceiling electrode, and whenever the reactor is to be cleaned, cleaning the reactor by applying RF power to the ceiling electrode and to the coil antenna while introducing an etchant gas into the vacuum chamber. In yet another embodiment the method includes performing chemical vapor deposition on a wafer by introducing a deposition precursor gas into the chamber while maintaining an inductively coupled plasma therein by applying RF power to the coil antenna while grounding the ceiling electrode, and cleaning the reactor by introducing a precursor cleaning gas into the chamber while maintaining a capacitively coupled plasma in the chamber by applying RF power to the ceiling electrode.
摘要:
An electrostatic chuck 100 useful for holding a substrate 55 in a high density plasma, comprises an electrode 110 at least partially covered by a semiconducting dielectric 115, wherein the semiconducting dielectric 115 may have an electrical resistance of from about 5×109 &OHgr;cm to about 8×1010 &OHgr;cm.
摘要:
An electrostatic chuck 100 useful for holding a substrate 55 in a high density plasma, comprises a dielectric covered electrode 110 having at least one heat transfer gas flow conduit 150 therein. An electrical isolator 200 comprising dielectric material is positioned in the gas flow conduit 150 to (i) electrically isolate the gas in the conduit from the plasma or electrode 110, and (ii) allow passage of heat transfer gas through the conduit. Preferably, the dielectric material comprises a plasma-deactivating material that has a high surface area that reduces plasma formation of gas passing through the conduit 150 in a plasma process. A semiconducting dielectric member 115 useful for rapidly charging and discharging electrostatic chucks is also described.
摘要:
Systems and methods for combined flow control and electricity generation are described. Various embodiments may comprise an energy recovery device adapted to produce an electric current. At least a portion of the electric current may be used to power a pump. A control system may be adapted to adjust operating parameters of the system to stabilize or maximize the efficiency of the energy recovery device.
摘要:
A method of improving the adhesion of processing materials on a ceramic component is described. The method includes the steps of forming a green ceramic component and texturing the surface of the green ceramic component. The as-textured component is then fired to harden the ceramic material. In an alternative embodiment of the method, a coating is applied to the surface of the as-fired ceramic component to provide a secondary adhesion layer. A ceramic component for use in an etching or deposition reactor chamber is also described. The ceramic component includes a substrate formed of a ceramic material and has a textured surface formed thereon such that the textured surface has a roughness of about 100 to 1000 μin Ra.
摘要:
A line narrowing method and module for a narrow band DUV high power high repetition rate gas discharge laser producing output laser light pulse beam pulses in bursts of pulses, the module having a nominal optical path are disclosed which may comprise: a dispersive center wavelength selection optic moveably mounted within an optical path of the line narrowing module, selecting at least one center wavelength for each pulse determined at least in part by the angle of incidence of the laser light pulse beam containing the respective pulse on the dispersive wavelength selection optic; a first tuning mechanism operative in part to select the angle of incidence of the laser light pulse beam containing the respective pulse upon the dispersive center wavelength selection optic, by selecting an angle of transmission of the laser light pulse beam containing the pulse toward the dispersive center wavelength selection optic; a second tuning mechanism operative in part to select the angle of incidence of the laser light pulse beam containing the respective pulse by changing the position of the dispersive center wavelength selection optic relative to the nominal optical path of the line narrowing module; wherein the second tuning mechanism coarsely selects a value for the center wavelength and the first tuning mechanism more finely selects the value for the center wavelength. The apparatus and method may further comprise at least one beam expanding and redirecting prism in the optical path of the line narrowing module; the first tuning mechanism selecting an angle of incidence of the at least a first spatially defined portion of the laser light pulse beam by changing the position of the at least one beam expanding prism relative to the nominal optical path of the line narrowing module. The first and second tuning mechanisms may be controlled by a center wavelength controller during a burst based upon feedback from a center wavelength detector detecting the center wavelength of at least one other pulse in the burst of pulses and the controller providing the feedback based upon an algorithm employing the detected center wavelength for the at least one other pulse in the burst. The first tuning mechanism may comprise an electro-mechanical course positioning mechanism and a fine positioning mechanism comprising an actuatable material that changes position or shape when actuated.
摘要:
An apparatus for planarizing a workpiece has a web with a face which is positioned adjacent the workpiece during planarization. At least one tension assembly is configured to maintain tension of the web. An orbiting assembly is configured to orbit the web relative to the workpiece. The apparatus for planarizing a workpiece may include first and second polishing surfaces where the first polishing surface has a substantially horizontal web with a face which is positioned adjacent the workpiece during the planarization process. The apparatus may also have a rotatable carousel and at least two workpiece carriers suspended from the carousel. Each of the carriers is configured to carry a workpiece and press the workpiece against one of the polishing surfaces while causing relative motion between the workpiece and the polishing surface. An apparatus for planarizing a workpiece which includes a plurality of polishing stations is also disclosed. At least one of the polishing stations has a web with a first face which is positioned adjacent the workpiece during planarization . The apparatus also includes an orbiting assembly configured to orbit the web relative to the workpiece.
摘要:
The present invention discloses a two basic structures (including multiple variations within one of the basic structures) and methods for fabrication of the structures which facilitate the flow of cooling gas or other heat transfer fluid to the surface of an electrostatic chuck. The basic structures address both the problem of breakdown of a heat transfer gas in an RF plasma environment and the problem of arcing between a semiconductor substrate and the conductive pedestal portion of the electrostatic chuck in such an RF plasma environment.
摘要:
The present invention provides a reliable, high-repetition rate, production line compatible high energy photon source. A very hot plasma containing an active material is produced in vacuum chamber. The active material is an atomic element having an emission line within a desired extreme ultraviolet (EUV) range. A pulse power source comprising a charging capacitor and a magnetic compression circuit comprising a pulse transformer, provides electrical pulses having sufficient energy and electrical potential sufficient to produce the EUV light at an intermediate focus at rates in excess of 5 Watts. In preferred embodiments designed by Applicants in-band, EUV light energy at the intermediate focus is 45 Watts extendable to 105.8 Watts.
摘要:
A method and apparatus if disclosed which may comprise a high power high repetition rate gas discharge laser UV light source which may comprise: a gas discharge chamber comprising an interior wall comprising a vertical wall and an adjacent bottom wall; a gas circulation fan creating a gas flow path adjacent the interior vertical wall and the adjacent bottom wall; an in-chamber dust trap positioned a region of low gas flow, which may be along an interior wall and may comprise at least one meshed screen, e.g., a plurality of meshed screens, which may comprise at least two different gauge meshed screens. The dust trap may extend along the bottom interior wall of the chamber and/or a vertical portion of the interior wall. The dust trap may comprise a first meshed screen having a first gauge; a second meshed screen having a second gauge smaller than the first gauge; and the second meshed screen intermediate the first meshed screen and the interior wall. The chamber may comprise a plurality of dust collecting recesses in at least one of the vertical interior wall and the bottom wall of the chamber which may be selected from a group comprising a one-part recess and a multi-part recess, which may comprise two sections angled with respect to each other. The dust trap may comprise a pressure trap positioned between a portion of a main insulator and an interior wall of the chamber. The chamber may comprise a gas circulating fan comprising a cross-flow fan with a fan cutoff that may comprise a vortex control pocket. The chamber may comprise a preionization mechanism comprising a preionization tub containing a ground rod within an elongated opening in the preionization tube that may comprise a compliant member, an automatic preionization shut-off mechanism, a preionization onset control mechanism and/or a focusing element. The chamber may comprise an elongated baffle plate that may comprise a plurality of pyramidal structures including varying numbers of generally pyramidal elements and oriented in groups of varying numbers of generally pyramidal elements and oriented along and transverse to the longitudinal axis. Acoustic resonances within the chamber may also be reduced by introducing an artificial jitter into the timing of the laser discharges varying the inter-pulse period randomly or in a repeating pattern from pulse to pulse within a burst.