摘要:
Provided is a bias control circuit that includes: a reference voltage circuit that generates a reference voltage; a resistor; a temperature dependent current generating circuit that generates a temperature dependent current, which changes depending on temperature, on the basis of the reference voltage and that supplies the temperature dependent current to one end of the resistor; a reference voltage buffer circuit that applies the reference voltage to the other end of the resistor; a constant current generating circuit that generates a constant current, which is for driving the reference voltage buffer circuit, on the basis of the reference voltage and that supplies the constant current to the other end of the resistor; and a bias generating circuit that generates a bias voltage or a bias current for a power amplification circuit on the basis of the voltage at the one end of the resistor.
摘要:
Reference circuits for biasing radio frequency electronics are provided herein. In certain implementations, a gallium arsenide die includes a power amplifier configured to provide amplification to a signal, a reference voltage circuit including an output terminal that provides a reference voltage, and a mirror circuit configured to bias the power amplifier based on the reference voltage. The reference voltage circuit includes a bipolar transistor, a field effect transistor, and a circuit portion that generates a voltage that is proportional to absolute temperature. The reference voltage circuit generates the reference voltage based on a sum of a base-to-emitter voltage of the bipolar transistor, a turn-on voltage of the field effect transistor, and the voltage that is proportional to absolute temperature.
摘要:
A voltage reference circuit implemented in GaAs to provide an output voltage component proportional to absolute temperature is described herein. The various embodiments of the voltage reference circuit described here can be used to provide precision voltage to bias a RF device. The voltage reference circuit can be provided on the same die as the RF device. The various embodiments described herein can be implemented in a GaAs material system.
摘要:
A voltage reference circuit implemented in GaAs to provide an output voltage component proportional to absolute temperature is described herein. The various embodiments of the voltage reference circuit described here can be used to provide precision voltage to bias a RF device. The voltage reference circuit can be provided on the same die as the RF device. The various embodiments described herein can be implemented in a GaAs material system.
摘要:
Pulse shaping biasing circuitry includes square wave generator circuitry, first inverse ramp signal generator circuitry, and second inverse ramp signal generator circuitry. The square wave generator circuitry is coupled between an input node and signal summation circuitry, and is configured to generate a square wave signal. The first inverse ramp signal generator circuitry is coupled in parallel with the square wave generator circuitry and configured to generate a first inverted ramp signal. The second inverse ramp signal generator circuitry is coupled in parallel with the square wave generator circuitry and the first inverse ramp signal generator circuitry and configured to generate a second inverted ramp signal. The square wave signal, the first inverted ramp signal, and the second inverted ramp signal are combined by the signal summation circuitry to provide a pulse shaping bias signal for a radio frequency (RF) power amplifier.
摘要:
Provided is a bias control circuit that includes: a reference voltage circuit that generates a reference voltage; a resistor; a temperature dependent current generating circuit that generates a temperature dependent current, which changes depending on temperature, on the basis of the reference voltage and that supplies the temperature dependent current to one end of the resistor; a reference voltage buffer circuit that applies the reference voltage to the other end of the resistor; a constant current generating circuit that generates a constant current, which is for driving the reference voltage buffer circuit, on the basis of the reference voltage and that supplies the constant current to the other end of the resistor; and a bias generating circuit that generates a bias voltage or a bias current for a power amplification circuit on the basis of the voltage at the one end of the resistor.
摘要:
A circuit for generation of a reference voltage for an electronic system, which circuit comprises at least one digital buffer (U21, U31, U32, U41, U51), a low pass filter (R21, C21; R31, C31; R41, C41; R51, C51) and an operational amplifier (OA21, OA31, OA41, OA51)), which circuit is adapted to revive an input in the form of a bandgap reference voltage into the digital buffer, which digital buffer is adapted to receive a digital input from a Pulse Width Modulated (PWM) signal, which digital buffer is adapted to generate an output signal adapted to be fed to the low pass filter, which output signal after filtration is adapted to be fed to a positive input terminal of the operational amplifier, which operational amplifier comprises a feedback circuit, which feedback circuit comprises at least one capacitor (C22, C32, C44, C54) adapted to be connected from an output terminal of the operational amplifier towards a negative input terminal of the operational amplifier so as to form an integrator, wherein the feedback circuit further comprises at least one chopped signal path (R22, S21; R33, R34, S32; R33, R35, C35, S31), which chopped signal is adapted to be modulated by the output signal of the digital buffer.
摘要:
The invention provides a semiconductor integrated circuit device and a high-frequency power amplifier module capable of reducing variations in the transmission power characteristics. The semiconductor integrated circuit device and the high-frequency power amplifier module each include, for example, a bandgap reference circuit, a regulator circuit, and a reference-voltage correction circuit which is provided between the bandgap reference circuit and the regulator circuit and which includes a unity gain buffer. The reference-voltage correction circuit corrects variations in a bandgap voltage from the bandgap reference circuit. The reference-voltage correction circuit includes first to third resistance paths having mutually different resistance values, and corrects the variations by selectively supplying a current which reflects an output voltage of the unity gain buffer to any one of the first to third resistance paths. The selection in this case is performed by connecting a bonding wire to any one of the terminals REF1 to REF3.
摘要:
The invention provides a semiconductor integrated circuit device and a high-frequency power amplifier module capable of reducing variations in the transmission power characteristics. The semiconductor integrated circuit device and the high-frequency power amplifier module each include, for example, a bandgap reference circuit, a regulator circuit, and a reference-voltage correction circuit which is provided between the bandgap reference circuit and the regulator circuit and which includes a unity gain buffer. The reference-voltage correction circuit corrects variations in a bandgap voltage from the bandgap reference circuit. The reference-voltage correction circuit includes first to third resistance paths having mutually different resistance values, and corrects the variations by selectively supplying a current which reflects an output voltage of the unity gain buffer to any one of the first to third resistance paths. The selection in this case is performed by connecting a bonding wire to any one of the terminals REF1 to REF3.
摘要:
Current-mode control for radio-frequency (RF) power amplifiers. In some embodiments, an RF power amplifier control circuit can include a sensor configured to measure a base current of a power amplifier and generate a sensed current. The control circuit can further include a sensing node configured to receive a reference current and perform a current-mode operation with the sensed current to yield an error current. The control circuit can further include a control loop configured to generate a control signal based on the error current to adjust an operating parameter of the power amplifier.