Single point offset calibration for inertial sensors
    92.
    发明授权
    Single point offset calibration for inertial sensors 有权
    惯性传感器的单点偏移校准

    公开(公告)号:US09594095B2

    公开(公告)日:2017-03-14

    申请号:US13936117

    申请日:2013-07-05

    Applicant: MCube, Inc.

    CPC classification number: G01P21/00 G01C25/005

    Abstract: A hand-held processor system for processing data from an integrated MEMS (Micro-Electro-Mechanical-Systems) device disposed within a hand-held computer system and methods therefor. The Single Point Offset Correction (SPOC) process computes offset values to calibrate MEMS sensors using a single set of data measurements at an orientation without dynamic perturbation, and without requiring advance knowledge of orientation of the device. Arbitrary output biases, which are known to be dominant on a single axis, can be corrected to ensure consistent performance. The SPOC process provides a simple method to effectively calibrate a MEMS sensor without requiring extensive system resources. This process can be enhanced by additional estimations of sensor offsets using the set of data measurements or by use of rule-based empirical gain factors.

    Abstract translation: 一种用于处理设置在手持计算机系统内的集成MEMS(微机电系统)装置的数据的手持处理器系统及其方法。 单点偏移校正(SPOC)过程计算偏移值,以在没有动态扰动的方向上使用单个数据测量集来校准MEMS传感器,并且不需要事先了解设备的取向。 已知在单个轴上占优势的任意输出偏差可以被校正,以确保一致的性能。 SPOC过程提供了一种简单的方法来有效地校准MEMS传感器,而不需要大量的系统资源。 可以通过使用该组数据测量或通过使用基于规则的经验增益因子的传感器偏移的附加估计来增强该过程。

    Power saving method of operating a portable computing device
    93.
    发明授权
    Power saving method of operating a portable computing device 有权
    操作便携式计算设备的省电方法

    公开(公告)号:US09588569B2

    公开(公告)日:2017-03-07

    申请号:US14223903

    申请日:2014-03-24

    Applicant: mCube, Inc.

    Inventor: ChengLong Fu

    Abstract: A portable computing device using power consumption reduction and a method of operating therefor. The method can include the following steps: determining, in a sensor in the portable computing device, orientation changes of the portable computing device; determining, in the portable computing device, a status of a first operation of the portable computing device; determining, in the portable computing device, a status of a second operation of the portable computing device; discontinuing, in the portable computing device, the second operation in response to when the orientation changes of the portable computing device are less than a threshold, and in response to the status of the first operation and the status of the second operation; and outputting, on a display of the portable computing device, an indication to a user that the second operation has been discontinued.

    Abstract translation: 使用功耗降低的便携式计算装置及其操作方法。 该方法可以包括以下步骤:在便携式计算设备的传感器中确定便携式计算设备的方向改变; 在便携式计算设备中确定便携式计算设备的第一操作的状态; 在所述便携式计算设备中确定所述便携式计算设备的第二操作的状态; 响应于便携式计算设备的方向改变何时小于阈值,以及响应于第一操作的状态和第二操作的状态,在便携式计算设备中停止第二操作; 以及在便携式计算设备的显示器上向用户输出第二操作已被停止的指示。

    METHOD AND STRUCTURE OF THREE DIMENSIONAL CMOS TRANSISTORS WITH HYBRID CRYSTAL ORIENTATIONS
    94.
    发明申请
    METHOD AND STRUCTURE OF THREE DIMENSIONAL CMOS TRANSISTORS WITH HYBRID CRYSTAL ORIENTATIONS 有权
    具有混合晶体取向的三维CMOS晶体管的方法与结构

    公开(公告)号:US20170011972A9

    公开(公告)日:2017-01-12

    申请号:US14218633

    申请日:2014-03-18

    Applicant: MCube, Inc.

    Abstract: A method for fabricating a three-dimensional integrated circuit device includes providing a first substrate having a first crystal orientation, forming at least one or more PMOS devices overlying the first substrate, and forming a first dielectric layer overlying the one or more PMOS devices. The method also includes providing a second substrate having a second crystal orientation, forming at least one or more NMOS devices overlying the second substrate, and forming a second dielectric layer overlying the one or more NMOS devices. The method further includes coupling the first dielectric layer to the second dielectric layer to form a hybrid structure including the first substrate overlying the second substrate.

    Abstract translation: 一种制造三维集成电路器件的方法包括提供具有第一晶体取向的第一衬底,形成覆盖在第一衬底上的至少一个或多个PMOS器件,以及形成覆盖该一个或多个PMOS器件的第一介电层。 该方法还包括提供具有第二晶体取向的第二衬底,形成覆盖第二衬底的至少一个或多个NMOS器件,以及形成覆盖该一个或多个NMOS器件的第二电介质层。 该方法还包括将第一电介质层耦合到第二电介质层以形成包括覆盖在第二衬底上的第一衬底的混合结构。

    SECURITY SYSTEM AND METHODS FOR INTEGRATED DEVICES
    95.
    发明申请
    SECURITY SYSTEM AND METHODS FOR INTEGRATED DEVICES 审中-公开
    集成设备的安全系统和方法

    公开(公告)号:US20160349327A1

    公开(公告)日:2016-12-01

    申请号:US15236182

    申请日:2016-08-12

    Applicant: mCube Inc.

    Abstract: A method is provided for implementing a security mechanism in an integrated MEMS (Micro-Electro-Mechanical-System) device having a MEMS sensor with an output register associated with a sensing operation, the integrated MEMS device being electrically coupled to a computing system programmed to perform the method. The method includes, in normal operation, reading from the output register an output of the sensing operation, and in a test mode, determining, by a processor disposed within the computing system, a random value. Determining the random value can include reading from the output register, which in the test mode or provides a value from an internal pattern generator. The method also includes determining, by the processor, a validation value, reading, by the processor, the random value stored in the output register; and determining, by the processor, whether the integrated device is valid using the validation value and the random value stored in the output register.

    Abstract translation: 提供了一种用于在具有与传感操作相关联的输出寄存器的MEMS传感器的集成MEMS(微机电系统)装置中实现安全机制的方法,所述集成MEMS装置电耦合到被编程为 执行该方法。 该方法包括在正常操作中,从输出寄存器读取感测操作的输出,并且在测试模式中,由设置在计算系统内的处理器确定随机值。 确定随机值可以包括从输出寄存器读取,哪个在测试模式下或从内部模式生成器提供值。 该方法还包括由处理器确定验证值,由处理器读取存储在输出寄存器中的随机值; 以及由处理器使用存储在输出寄存器中的验证值和随机值来确定集成器件是否有效。

    Method of reducing gyroscope oscillator start-up time and device therefor
    96.
    发明授权
    Method of reducing gyroscope oscillator start-up time and device therefor 有权
    降低陀螺仪振荡器启动时间的方法及其设备

    公开(公告)号:US09464899B2

    公开(公告)日:2016-10-11

    申请号:US14497317

    申请日:2014-09-25

    Applicant: mCube Inc.

    Inventor: Wenhua Zhang

    CPC classification number: G01C19/5776 B81B2201/0242 H03B2200/0094

    Abstract: A gyroscope device and method of operation therefor. The gyroscope device can include a power input, a charge pump portion coupled to the power input, a selection mechanism, a switching mechanism, an oscillator driving mechanism coupled to the switching mechanism, and an oscillator coupled to the charge pump portion and to the oscillator driving mechanism. The method of operation can include providing a first or second selection signal from a selection mechanism associated with the outputting of a DC input power or DC output power from a switching mechanism, respectively. These signals, along with an oscillator driving signal from an oscillator driving mechanism, can be used to initiate and maintain oscillation of an oscillator at a steady-state frequency within a predetermined range of frequencies.

    Abstract translation: 陀螺仪装置及其操作方法。 陀螺仪装置可以包括功率输入,耦合到功率输入的电荷泵部分,选择机构,开关机构,耦合到开关机构的振荡器驱动机构,以及耦合到电荷泵部分和振荡器 驱动机制。 操作方法可以包括分别从与切换机构输出DC输入功率或DC输出功率相关的选择机构提供第一或第二选择信号。 这些信号以及来自振荡器驱动机构的振荡器驱动信号可以用于启动并保持在预定频率范围内的稳态频率的振荡器的振荡。

    Methods and Structures of Integrated MEMS-CMOS Devices
    97.
    发明申请
    Methods and Structures of Integrated MEMS-CMOS Devices 有权
    集成MEMS-CMOS器件的方法和结构

    公开(公告)号:US20160176708A1

    公开(公告)日:2016-06-23

    申请号:US14985388

    申请日:2015-12-30

    Applicant: mCube, Inc.

    Abstract: A method for fabricating an integrated MEMS-CMOS device uses a micro-fabrication process that realizes moving mechanical structures (MEMS) on top of a conventional CMOS structure by bonding a mechanical structural wafer on top of the CMOS and etching the mechanical layer using plasma etching processes, such as Deep Reactive Ion Etching (DRIE). During etching of the mechanical layer, CMOS devices that are directly connected to the mechanical layer are exposed to plasma. This sometimes causes permanent damage to CMOS circuits and is termed Plasma Induced Damage (PID). Embodiments of the present invention presents methods and structures to prevent or reduce this PID and protect the underlying CMOS circuits by grounding and providing an alternate path for the CMOS circuits until the MEMS layer is completely etched.

    Abstract translation: 一种用于制造集成的MEMS-CMOS器件的方法使用微型制造工艺,其通过在CMOS的顶部上结合机械结构晶片并使用等离子体蚀刻来蚀刻机械层来实现在常规CMOS结构之上的移动机械结构(MEMS) 工艺,如深层反应离子蚀刻(DRIE)。 在蚀刻机械层期间,直接连接到机械层的CMOS器件暴露于等离子体。 这有时会导致对CMOS电路的永久性损坏,称为等离子体诱发损伤(PID)。 本发明的实施例提出了防止或减少该PID并且通过接地并为CMOS电路提供替代路径来保护下面的CMOS电路直到MEMS层被完全蚀刻的方法和结构。

    Method and structure for adding mass with stress isolation to MEMS structures
    98.
    发明授权
    Method and structure for adding mass with stress isolation to MEMS structures 有权
    向MEMS结构增加应力隔离质量的方法和结构

    公开(公告)号:US09321629B2

    公开(公告)日:2016-04-26

    申请号:US14217376

    申请日:2014-03-17

    Applicant: mCube Inc.

    Abstract: A method and structure for adding mass with stress isolation to MEMS. The structure has a thickness of silicon material coupled to at least one flexible element. The thickness of silicon material can be configured to move in one or more spatial directions about the flexible element(s) according to a specific embodiment. The apparatus also includes a plurality of recessed regions formed in respective spatial regions of the thickness of silicon material. Additionally, the apparatus includes a glue material within each of the recessed regions and a plug material formed overlying each of the recessed regions.

    Abstract translation: 一种将应力隔离加入MEMS的方法和结构。 该结构具有耦合到至少一个柔性元件的硅材料的厚度。 根据具体实施例,硅材料的厚度可被配置为围绕柔性元件在一个或多个空间方向上移动。 该设备还包括形成在硅材料厚度的相应空间区域中的多个凹陷区域。 此外,该设备包括在每个凹陷区域内的胶合材料和形成在每个凹陷区域上的塞子材料。

    METHOD TO PACKAGE MULTIPLE MEMS SENSORS AND ACTUATORS AT DIFFERENT GASES AND CAVITY PRESSURES
    99.
    发明申请
    METHOD TO PACKAGE MULTIPLE MEMS SENSORS AND ACTUATORS AT DIFFERENT GASES AND CAVITY PRESSURES 审中-公开
    在不同气体和气压下封装多个MEMS传感器和执行器的方法

    公开(公告)号:US20160039667A1

    公开(公告)日:2016-02-11

    申请号:US14887622

    申请日:2015-10-20

    Applicant: mCube Inc.

    Abstract: A method for fabricating a multiple MEMS device includes providing a semiconductor substrate having a first and second MEMS device, and an encapsulation wafer with a first cavity and a second cavity, which includes at least one channel. The first MEMS is encapsulated within the first cavity and the second MEMS device is encapsulated within the second cavity. These devices is encapsulated within a first encapsulation environment at a first air pressure, and encapsulating the first MEMS device within the first cavity at the first air pressure. The second MEMS device within the second cavity is then subjected to a second encapsulating environment at a second air pressure via the channel of the second cavity.

    Abstract translation: 一种用于制造多个MEMS器件的方法包括提供具有第一和第二MEMS器件的半导体衬底以及包括至少一个通道的具有第一腔和第二腔的封装晶片。 第一MEMS封装在第一腔内,第二MEMS器件被封装在第二腔内。 这些装置在第一空气压力下封装在第一封装环境内,并且在第一空气压力下将第一MEMS装置封装在第一空腔内。 然后第二腔内的第二MEMS器件经由第二腔的通道在第二空气压力下经受第二封装环境。

    METHOD AND STRUCTURE OF MONOLITHICALLY INTEGRATED ABSOLUTE PRESSURE SENSOR
    100.
    发明申请
    METHOD AND STRUCTURE OF MONOLITHICALLY INTEGRATED ABSOLUTE PRESSURE SENSOR 有权
    单一积分绝对压力传感器的方法与结构

    公开(公告)号:US20150315016A1

    公开(公告)日:2015-11-05

    申请号:US14311034

    申请日:2014-06-20

    Applicant: mCube Inc.

    Abstract: An integrated pressure sensing device and method of fabrication thereof are disclosed. The method can include providing a substrate member having a surface region and forming a CMOS IC layer overlying the substrate and forming an oxide layer overlying the CMOS IC layer. A portion of the oxide layer can be removed to form a cavity region. A single crystalline silicon wafer can be bonded overlying the oxide surface region to seal the cavity region. The bonding process can include a fusion bonding or eutectic bonding process. The wafer can be thinned to a desired thickness and portions can be removed and filled with metal materials to form via structures. A pressure sensor device can be formed from the wafer, and can be co-fabricated with another sensor from the wafer. The pressure sensor and the other sensor can share a cavity pressure or have separate cavity pressures.

    Abstract translation: 公开了一种集成的压力感测装置及其制造方法。 该方法可以包括提供具有表面区域的衬底构件,并且形成覆盖衬底的CMOS IC层并形成覆盖在CMOS IC层上的氧化物层。 可以去除氧化物层的一部分以形成空腔区域。 可以将单晶硅晶片粘合在氧化物表面区域上以密封空腔区域。 接合工艺可以包括熔接或共熔粘合工艺。 可以将晶片减薄到所需的厚度,并且可以去除部分并用金属材料填充以形成通孔结构。 压力传感器装置可以由晶片形成,并可与来自晶片的另一传感器共同制造。 压力传感器和另一个传感器可以共享腔体压力或具有单独的腔体压力。

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