公开(公告)号：US20120319302A1

公开(公告)日：2012-12-20

申请号：US13163026

申请日：2011-06-17

申请人： YongTaek Lee ,  HyunTai Kim ,  Gwang Kim ,  ByungHoon Ahn ,  Kai Liu

发明人： YongTaek Lee ,  HyunTai Kim ,  Gwang Kim ,  ByungHoon Ahn ,  Kai Liu

IPC分类号： H01L23/28 ,  H01L21/56

CPC分类号： H01L23/3121 ,  H01L21/565 ,  H01L23/3128 ,  H01L23/49822 ,  H01L23/645 ,  H01L23/66 ,  H01L24/73 ,  H01L25/0652 ,  H01L25/16 ,  H01L2223/6672 ,  H01L2224/16225 ,  H01L2224/32145 ,  H01L2224/48091 ,  H01L2224/48145 ,  H01L2224/48227 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2224/83191 ,  H01L2224/92247 ,  H01L2225/06558 ,  H01L2924/01322 ,  H01L2924/13091 ,  H01L2924/15311 ,  H01L2924/19107 ,  H01L2924/3011 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/32225 ,  H01L2924/00014

摘要： A semiconductor device has a first semiconductor die containing a low pass filter and baluns. The first semiconductor die has a high resistivity substrate. A second semiconductor die including a bandpass filter is mounted to the first semiconductor die. The second semiconductor die has a gallium arsenide substrate. A third semiconductor die including an RF switch is mounted to the first semiconductor die. A fourth semiconductor die includes an RF transceiver. The first, second, and third semiconductor die are mounted to the fourth semiconductor die. The first, second, third, and fourth semiconductor die are mounted to a substrate. An encapsulant is deposited over the first, second, third, and fourth semiconductor die and substrate. A plurality of bond wires is formed between the second semiconductor die and first semiconductor die, and between the third semiconductor die and first semiconductor die, and between the first semiconductor die and substrate.

摘要翻译： 半导体器件具有包含低通滤波器和巴伦的第一半导体管芯。 第一半导体管芯具有高电阻率的衬底。 包括带通滤波器的第二半导体管芯被安装到第一半导体管芯。 第二半导体管芯具有砷化镓基板。 包括RF开关的第三半导体管芯被安装到第一半导体管芯。 第四半导体管芯包括RF收发器。 第一，第二和第三半导体管芯安装到第四半导体管芯。 第一，第二，第三和第四半导体管芯安装在基板上。 密封剂沉积在第一，第二，第三和第四半导体管芯和衬底上。 在第二半导体管芯和第一半导体管芯之间以及第三半导体管芯和第一半导体管芯之间以及第一半导体管芯和衬底之间形成多个接合线。

公开(公告)号：US20120267800A1

公开(公告)日：2012-10-25

申请号：US13543088

申请日：2012-07-06

申请人： Yaojian Lin ,  Robert C. Frye ,  Pandi Chelvam Marimuthu ,  Kai Liu

发明人： Yaojian Lin ,  Robert C. Frye ,  Pandi Chelvam Marimuthu ,  Kai Liu

IPC分类号： H01L25/16 ,  H01L23/522

CPC分类号： H01L23/49816 ,  H01L21/4857 ,  H01L21/561 ,  H01L21/568 ,  H01L23/49822 ,  H01L23/5389 ,  H01L24/19 ,  H01L24/20 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2224/0346 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/05569 ,  H01L2224/05572 ,  H01L2224/05611 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05666 ,  H01L2224/05671 ,  H01L2224/1132 ,  H01L2224/11334 ,  H01L2224/1145 ,  H01L2224/1146 ,  H01L2224/11849 ,  H01L2224/12105 ,  H01L2224/13022 ,  H01L2224/13111 ,  H01L2224/14133 ,  H01L2224/14135 ,  H01L2224/14163 ,  H01L2224/14165 ,  H01L2224/2101 ,  H01L2224/214 ,  H01L2224/221 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/09701 ,  H01L2924/10329 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/19015 ,  H01L2924/19041 ,  H01L2924/30105 ,  H01L2924/00 ,  H01L2224/05552 ,  H01L2924/00012

摘要： A semiconductor wafer contains semiconductor die. A first conductive layer is formed over the die. A resistive layer is formed over the die and first conductive layer. A first insulating layer is formed over the die and resistive layer. The wafer is singulated to separate the die. The die is mounted to a temporary carrier. An encapsulant is deposited over the die and carrier. The carrier and a portion of the encapsulant and first insulating layer is removed. A second insulating layer is formed over the encapsulant and first insulating layer. A second conductive layer is formed over the first and second insulating layers. A third insulating layer is formed over the second insulating layer and second conductive layer. A third conductive layer is formed over the third insulating layer and second conductive layer. A fourth insulating layer is formed over the third insulating layer and third conductive layer.

摘要翻译： 半导体晶片包含半导体晶片。 在模具上形成第一导电层。 在管芯和第一导电层上形成电阻层。 在管芯和电阻层上形成第一绝缘层。 将晶片单片化以分离模具。 模具安装到临时托架上。 密封剂沉积在模具和载体上。 移除载体和密封剂和第一绝缘层的一部分。 在密封剂和第一绝缘层之上形成第二绝缘层。 在第一绝缘层和第二绝缘层上形成第二导电层。 在第二绝缘层和第二导电层上形成第三绝缘层。 在第三绝缘层和第二导电层上形成第三导电层。 在第三绝缘层和第三导电层上形成第四绝缘层。

公开(公告)号：US08290374B2

公开(公告)日：2012-10-16

申请号：US12646701

申请日：2009-12-23

申请人： Junrui Li ,  Jing Nui ,  Chunyan Yang ,  Changbin Hu ,  Kai Liu

发明人： Junrui Li ,  Jing Nui ,  Chunyan Yang ,  Changbin Hu ,  Kai Liu

IPC分类号： H04B10/12

CPC分类号： H04B10/697 ,  H04B10/032 ,  H04J14/0295

摘要： A dispersion compensation method and a dispersion compensation device in an optical communication system are provided. The method mainly includes the following steps. A dispersion compensation value transmitted through a working path at a second wavelength is received through a non-working path at a first wavelength in an optical communication system. The non-working path at the first wavelength and the working path at the second wavelength use the same service channel. Dispersion in the non-working path at the first wavelength is compensated according to the dispersion compensation value. Therefore, no matter the working path is a main path or a backup path, the dispersion compensation value on the non-working path can be accurately regulated in time, such that the dispersion of the working path reaches an optimal status each time after the protection switching occurs to the service, thereby ensuring the fast switching of the service.

摘要翻译： 提供了一种光通信系统中的色散补偿方法和色散补偿装置。 该方法主要包括以下步骤。 通过光通信系统中的第一波长的非工作路径接收通过第二波长的工作路径发送的色散补偿值。 第一波长的非工作路径和第二波长的工作路径使用相同的服务信道。 根据色散补偿值补偿在第一波长的非工作路径中的色散。 因此，无论工作路径为主路径还是备用路径，都能够及时准确地调整非工作路径上的色散补偿值，使得工作路径的分散在保护后每次达到最佳状态 对服务进行切换，从而确保服务的快速切换。

公开(公告)号：US08269575B2

公开(公告)日：2012-09-18

申请号：US12750555

申请日：2010-03-30

申请人： Robert C. Frye ,  Kai Liu

发明人： Robert C. Frye ,  Kai Liu

IPC分类号： H03H7/42 ,  H01P3/08

CPC分类号： H01L23/5227 ,  H01L23/5223 ,  H01L2224/16225 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/09701 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/30107 ,  H01L2924/3011 ,  Y10T29/41 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： A semiconductor device has an RF balun formed over a substrate. The RF balun includes a first conductive trace wound to exhibit inductive properties with a first end coupled to a first terminal of the semiconductor device and second end coupled to a second terminal of the semiconductor device. A first capacitor is coupled between the first and second ends of the first conductive trace. A second conductive trace is wound to exhibit inductive properties with a first end coupled to a third terminal of the semiconductor device and second end coupled to a fourth terminal of the semiconductor device. The first conductive trace is formed completely within the second conductive trace. The first conductive trace and second conductive trace can have an oval, circular, or polygonal shape separated by 50 micrometers. A second capacitor is coupled between the first and second ends of the second conductive trace.

摘要翻译： 半导体器件具有在衬底上形成的RF平衡 - 不平衡变压器。 RF平衡 - 不平衡变压器包括缠绕以显示感应特性的第一导电迹线，其中第一端耦合到半导体器件的第一端子，第二端耦合到半导体器件的第二端子。 第一电容器耦合在第一导电迹线的第一和第二端之间。 第二导电迹线被卷绕以呈现感应特性，其中第一端耦合到半导体器件的第三端子，第二端耦合到半导体器件的第四端子。 第一导电迹线完全在第二导电迹线内形成。 第一导电迹线和第二导电迹线可以具有由50微米分开的椭圆形，圆形或多边形形状。 第二电容器耦合在第二导电迹线的第一端和第二端之间。

公开(公告)号：US20120224231A1

公开(公告)日：2012-09-06

申请号：US13497782

申请日：2010-09-14

申请人： Qiangzi Cong ,  Tianxin Jiang ,  Lei Zheng ,  Lei Che ,  Kai Liu ,  Jigang Zhang

发明人： Qiangzi Cong ,  Tianxin Jiang ,  Lei Zheng ,  Lei Che ,  Kai Liu ,  Jigang Zhang

IPC分类号： G06K15/02

CPC分类号： B41J3/60 ,  B41J3/44 ,  B65H29/52 ,  B65H29/58 ,  B65H85/00 ,  B65H2301/314 ,  B65H2301/333 ,  B65H2301/5111 ,  B65H2404/632 ,  B65H2404/64 ,  B65H2553/22 ,  B65H2701/1912 ,  G06K9/186

摘要： An apparatus for processing a recording medium with embedded information comprises: a passage mechanism including a first passage, a loop passage and recording medium conveying rollers, wherein a first opening and a second opening of the loop passage are connected to the tail end of the first passage; a first guide mechanism configured to selectively communicate the first passage with the first opening or the second opening of the loop passage; and a processing device including a magnetic head and a print head which are arranged in the first passage, wherein the magnetic head is arranged at a side of a recording medium inlet/outlet port which is adjacent to a leading end of the first passage. A method for processing the recording medium with embedded information is also disclosed. According to the apparatus and method for processing the recording medium mentioned above, the recording medium can be turned over automatically during moving through the loop passage, so that the printing on both sides of the recording medium can be realized by one single print head, and thus a comprehensive process on the recording medium with embedded information is realized, and the cost of the apparatus is reduced.

摘要翻译： 一种用于处理具有嵌入信息的记录介质的设备，包括：通道机构，包括第一通道，环路通道和记录介质输送辊，其中环路通道的第一开口和第二开口连接到第一通道 通道; 第一引导机构，其构造成选择性地将第一通道与环通道的第一开口或第二开口连通; 以及包括设置在第一通道中的磁头和打印头的处理装置，其中磁头布置在与第一通道的前端相邻的记录介质入口/出口侧。 还公开了一种用于处理具有嵌入信息的记录介质的方法。 根据上述记录介质的处理装置和方法，可以在通过环路通过的过程中自动翻转记录介质，从而可以通过一个打印头实现记录介质的两侧的打印，并且 从而实现了具有嵌入信息的记录介质上的综合处理，并且降低了设备的成本。

公开(公告)号：US08225501B2

公开(公告)日：2012-07-24

申请号：US12756032

申请日：2010-04-07

申请人： Liang Liu ,  Zhuo Chen ,  Kai Liu ,  Chen Feng ,  Kai-Li Jiang ,  Shou-Shan Fan

发明人： Liang Liu ,  Zhuo Chen ,  Kai Liu ,  Chen Feng ,  Kai-Li Jiang ,  Shou-Shan Fan

IPC分类号： H05K3/02 ,  H05K3/10

CPC分类号： C23C14/0005 ,  H04R23/002

摘要： The present invention relates to a method for making a thermoacoustic device. The method includes the following steps. A substrate with a surface is provided. A plurality of microspaces is formed on the surface of the substrate. A sacrifice layer is fabricated to fill the microspaces. A metal film is deposited on the sacrifice layer, and the sacrifice layer is removed. A signal input device is provided to electrically connect with the metal film.

摘要翻译： 本发明涉及制作热声装置的方法。 该方法包括以下步骤。 提供具有表面的基板。 在基板的表面上形成多个微孔。 制作牺牲层以填充微球。 在牺牲层上沉积金属膜，除去牺牲层。 提供信号输入装置以与金属膜电连接。

公开(公告)号：US20120071472A1

公开(公告)日：2012-03-22

申请号：US13171102

申请日：2011-06-28

申请人： Kai Liu ,  Christopher B. Cooper ,  Haihong Huang ,  Chun Li ,  Binna Liu ,  Yang Liu ,  Zhenkun Ma ,  Jingbin Wang ,  Dali Yin ,  Dongfeng Zhang ,  Gang Zhang ,  Hao Zhang

发明人： Kai Liu ,  Christopher B. Cooper ,  Haihong Huang ,  Chun Li ,  Binna Liu ,  Yang Liu ,  Zhenkun Ma ,  Jingbin Wang ,  Dali Yin ,  Dongfeng Zhang ,  Gang Zhang ,  Hao Zhang

IPC分类号： A61K31/498 ,  A61K31/506 ,  C07D401/12 ,  C07D401/14 ,  A61P31/06 ,  A61K31/5377 ,  C07D405/14 ,  C07D409/14 ,  A61P31/04 ,  C07D403/12 ,  C07D413/14

CPC分类号： C07D409/14 ,  A61K31/498 ,  A61K31/506 ,  A61K31/5377 ,  A61K45/06 ,  C07D401/12 ,  C07D401/14 ,  C07D403/12 ,  C07D405/12 ,  C07D407/14 ,  C07D409/12

摘要： The present invention relates to riminophenazines having heteroaromatic substitutions, including those with 2-heteroaryl-amino substituents, to their preparation, and to their use as drugs for treating Mycobacterium tuberculosis and other microbial infections, either alone or in combination with other anti-infective treatments.

摘要翻译： 本发明涉及具有杂芳香取代基，包括具有2-杂芳基 - 氨基取代基的那些，其制备方法及其用作治疗结核分枝杆菌和其它微生物感染的药物，其单独使用或与其它抗感染治疗组合 。

公开(公告)号：US20120032244A1

公开(公告)日：2012-02-09

申请号：US13273546

申请日：2011-10-14

申请人： François Hébert ,  Kai Liu

发明人： François Hébert ,  Kai Liu

IPC分类号： H01L29/94

CPC分类号： H01L23/49524 ,  H01L23/49562 ,  H01L23/49575 ,  H01L23/49589 ,  H01L24/37 ,  H01L24/40 ,  H01L24/41 ,  H01L24/48 ,  H01L2224/37011 ,  H01L2224/40095 ,  H01L2224/40245 ,  H01L2224/40247 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/73221 ,  H01L2224/73265 ,  H01L2224/83801 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10329 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2224/37099 ,  H01L2224/84

摘要： A top-side cooled compact semiconductor package with integrated bypass capacitor is disclosed. The top-side cooled compact semiconductor package includes a circuit substrate with terminal leads, numerous semiconductor dies bonded atop the circuit substrate, numerous elevation-adaptive interconnection plates for bonding and interconnecting top contact areas of the semiconductor dies with the circuit substrate, a first member of the elevation-adaptive interconnection plates has a first flat-top area and a second member of the elevation-adaptive interconnection plates has a second flat-top area in level with the first flat-top area, a bypass capacitor, having two capacitor terminals located at its ends, stacked atop the two interconnection plate members while being bonded thereto via the first flat-top area and the second flat-top area for a reduced interconnection parasitic impedance.

摘要翻译： 公开了具有集成旁路电容器的顶侧冷却紧凑型半导体封装。 顶侧冷却的紧凑型半导体封装包括具有端子引线的电路基板，接合在电路基板顶上的多个半导体管芯，用于将半导体管芯的顶部接触区域与电路基板接合和互连的许多仰角自适应互连板，第一构件 所述高度自适应互连板具有第一平顶区域，并且所述仰角自适应互连板的第二构件具有与所述第一平顶区域平齐的第二平顶区域，具有两个电容器端子的旁路电容器 位于其端部，并且通过第一平顶部区域和第二平顶部区域结合到两个互连板构件的顶部，以减少互连寄生阻抗。

公开(公告)号：US08111113B2

公开(公告)日：2012-02-07

申请号：US12705810

申请日：2010-02-15

申请人： Kai Liu ,  Robert Charles Frye

发明人： Kai Liu ,  Robert Charles Frye

IPC分类号： H03H7/00 ,  H01G4/06

CPC分类号： H03H7/09 ,  H01F17/0006 ,  H01F2017/0046 ,  H01F2017/0073 ,  H03H7/1708 ,  H03H7/1775 ,  Y10T29/4902

摘要： A semiconductor device has a first coil structure formed over the substrate. A second coil structure is formed over the substrate adjacent to the first coil structure. A third coil structure is formed over the substrate adjacent to the second coil structure. The first and second coil structures are coupled by mutual inductance, and the second and third coil structures are coupled by mutual inductance. The first, second, and third coil structures each have a height greater than a skin current depth of the coil structure defined as a depth which current reduces to 1/(complex permittivity) of a surface current value. A thin film capacitor is formed within the semiconductor device by a first metal plate, dielectric layer over the first metal plate, and second and third electrically isolated metal plates opposite the first metal plate. The terminals are located on the same side of the capacitor.

摘要翻译： 半导体器件具有形成在衬底上的第一线圈结构。 在与第一线圈结构相邻的衬底上形成第二线圈结构。 在与第二线圈结构相邻的衬底上形成第三线圈结构。 第一和第二线圈结构通过互感耦合，并且第二和第三线圈结构通过互感耦合。 第一，第二和第三线圈结构各自具有高于线圈结构的皮肤电流深度的高度，其被定义为电流减小到表面电流值的1 /（复数介电常数）的深度。 通过第一金属板，第一金属板上的电介质层和与第一金属板相对的第二和第三电隔离金属板，在半导体器件内形成薄膜电容器。 端子位于电容器的同一侧。

公开(公告)号：US20110309892A1

公开(公告)日：2011-12-22

申请号：US13219374

申请日：2011-08-26

申请人： Robert C. Frye ,  Kai Liu

发明人： Robert C. Frye ,  Kai Liu

IPC分类号： H03H7/42 ,  H01L21/02

CPC分类号： H01L28/10 ,  H01L23/64 ,  H01L23/66 ,  H01L27/016 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2924/09701 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/19011 ,  H01L2924/30107 ,  H01L2924/3011 ,  H03H7/42 ,  H03H2001/0064 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： A semiconductor die has an RF coupler and balun integrated on a common substrate. The RF coupler includes first and second conductive traces formed in close proximity. The RF coupler further includes a resistor. The balun includes a primary coil and two secondary coils. A first capacitor is coupled between first and second terminals of the semiconductor die. A second capacitor is coupled between a third terminal of the semiconductor die and a ground terminal. A third capacitor is coupled between a fourth terminal of the semiconductor die and the ground terminal. A fourth capacitor is coupled between the high side and low side of the primary coil. The integration of the RF coupler and balun on the common substrate offers flexible coupling strength and signal directivity, and further improves electrical performance due to short lead lengths, reduces form factor, and increases manufacturing yield.

摘要翻译： 半导体管芯具有集成在公共衬底上的RF耦合器和平衡 - 不平衡变换器。 RF耦合器包括紧邻形成的第一和第二导电迹线。 RF耦合器还包括电阻器。 平衡 - 不平衡转换器包括一个初级线圈和两个次级线圈。 第一电容器耦合在半导体管芯的第一和第二端子之间。 第二电容器耦合在半导体管芯的第三端子和接地端子之间。 第三电容器耦合在半导体管芯的第四端子和接地端子之间。 第四电容器耦合在初级线圈的高侧和低侧之间。 RF耦合器和平衡 - 不平衡转换器在公共基板上的集成提供了灵活的耦合强度和信号方向性，并且由于短的引线长度，减小了外形尺寸，并且提高了制造成品率，从而进一步提高了电气性能。